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31. 发明申请

US20050094938A1 External grating structures for interfacing wavelength-division-multiplexed optical sources with thin optical waveguides 有权
标题翻译：用于将波分复用光源与薄光波导接口连接的外部光栅结构
公开(公告)号：US20050094938A1
公开(公告)日：2005-05-05
申请号：US10935145
申请日：2004-09-07
申请人： Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine Yanushefski
发明人： Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine Yanushefski
IPC分类号： G02B20060101 , G02B6/34
CPC分类号： G02B6/12007 , G02B6/122 , G02B6/29311 , G02B6/34
摘要： A coupling arrangement for allowing multiple wavelengths to be coupled into and out of a relatively thin silicon optical waveguide layer utilizes a diffractive optical element, in the form of a volume phase grating, in combination with a prism coupling structure. The diffractive optical element is formed to comprise a predetermined modulation index sufficient to diffract the various wavelengths through angles associated with improving the coupling efficiency of each wavelength into the silicon waveguide. The diffractive optical element may be formed as a separate element, or formed as an integral part of the coupling facet of the prism coupler.
摘要翻译：用于允许多个波长耦合到相对薄的硅光波导层中的耦合布置利用体积相位光栅的形式的衍射光学元件与棱镜耦合结构组合。衍射光学元件被形成为包括足以将各种波长衍射成与提高每个波长到硅波导的耦合效率相关联的角度的预定调制指数。衍射光学元件可以形成为单独的元件，或者形成为棱镜耦合器的耦合面的整体部分。

32. 发明授权

US07587106B2 Optical crossover in thin silicon 有权
标题翻译：薄硅光学交叉
公开(公告)号：US07587106B2
公开(公告)日：2009-09-08
申请号：US12157630
申请日：2008-06-12
申请人： David Piede , Prakash Gothoskar , Margaret Ghiron , Robert Keith Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine A. Yanushefski
发明人： David Piede , Prakash Gothoskar , Margaret Ghiron , Robert Keith Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine A. Yanushefski
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , G02B6/125 , G02B2006/12061 , G02B2006/12097 , G02B2006/12104 , G02B2006/12176 , G02B2006/12195
摘要： An arrangement for providing optical crossovers between waveguides formed in an SOI-based structure utilize a patterned geometry in the SOI structure that is selected to reduce the effects of crosstalk in the area where the signals overlap. Preferably, the optical signals are fixed to propagate along orthogonal directions (or are of different wavelengths) to minimize the effects of crosstalk. The geometry of the SOI structure is patterned to include predetermined tapers and/or reflecting surfaces to direct/shape the propagating optical signals. The patterned waveguide regions within the optical crossover region may be formed to include overlying polysilicon segments to further shape the propagating beams and improve the coupling efficiency of the crossover arrangement.
摘要翻译：用于在基于SOI的结构中形成的波导之间提供光学交叉的装置利用SOI结构中的图案化几何形状，其被选择以减少信号重叠的区域中串扰的影响。优选地，光信号被固定以沿着正交方向（或不同波长）传播，以最小化串扰的影响。 SOI结构的几何形状被图案化以包括预定的锥形和/或反射表面以引导/形成传播的光学信号。光学交叉区域内的图案化波导区域可以形成为包括覆盖多晶硅段，以进一步使传播波束成形，并提高交叉布置的耦合效率。

33. 发明授权

US07440703B2 High-speed, silicon-based electro-optic modulator with feedback control 有权
标题翻译：具有反馈控制功能的高速硅基电光调制器
公开(公告)号：US07440703B2
公开(公告)日：2008-10-21
申请号：US11362305
申请日：2006-02-22
申请人： Kalpendu Shastri , Prakash Gothoskar , Margaret Ghiron , Vipulkumar Patel , Robert Keith Montgomery , Soham Pathak , Katherine A. Yanushefski
发明人： Kalpendu Shastri , Prakash Gothoskar , Margaret Ghiron , Vipulkumar Patel , Robert Keith Montgomery , Soham Pathak , Katherine A. Yanushefski
IPC分类号： H04B10/04 , G02B26/00 , G02B6/26
CPC分类号： G02F1/025 , G02F1/0121 , G02F1/225 , G02F2001/0152 , H04B10/505 , H04B10/58
摘要： An electro-optic modulator arrangement for achieving switching speeds greater than 1 Gb/s utilizes pre-emphasis pulses to accelerate the change in refractive index of the optical waveguide used to form the electro-optic modulator. In one embodiment, a feedback loop may be added to use a portion of the modulated optical output signal to adjust the magnitude and duration of the pre-emphasis pulses, as well as the various reference levels used for modulated. For free carrier-based electro-optic modulators, including silicon-based electro-optic modulators, the pre-emphasis pulses are used to accelerate the movement of free carriers at the transitions between input signal data values.
摘要翻译：用于实现大于1Gb / s的开关速度的电光调制器装置利用预加重脉冲来加速用于形成电光调制器的光波导的折射率变化。在一个实施例中，可以添加反馈回路以使用调制的光输出信号的一部分来调整预加重脉冲的幅度和持续时间以及用于调制的各种参考电平。对于基于硅的电光调制器的自由载体的电光调制器，预加重脉冲用于加速在输入信号数据值之间的转变处的自由载流子的移动。

34. 发明授权

US07298949B2 SOI-based photonic bandgap devices 有权
标题翻译：基于SOI的光子带隙器件
公开(公告)号：US07298949B2
公开(公告)日：2007-11-20
申请号：US11042774
申请日：2005-01-24
申请人： Prakash Gothoskar , Margaret Ghiron , Robert Keith Montgomery , Vipulkumar Patel , Soham Pathak , David Piede , Kalpendu Shastri , Katherine A. Yanushefski
发明人： Prakash Gothoskar , Margaret Ghiron , Robert Keith Montgomery , Vipulkumar Patel , Soham Pathak , David Piede , Kalpendu Shastri , Katherine A. Yanushefski
IPC分类号： G02B6/10 , G02B6/12
CPC分类号： G02F1/025 , G02F2202/32
摘要： An SOI-based photonic bandgap (PBG) electro-optic device utilizes a patterned PBG structure to define a two-dimensional waveguide within an active waveguiding region of the SOI electro-optic device. The inclusion of the PBG columnar arrays within the SOI structure results in providing extremely tight lateral confinement of the optical mode within the waveguiding structure, thus significantly reducing the optical loss. By virtue of including the PBG structure, the associated electrical contacts may be placed in closer proximity to the active region without affecting the optical performance, thus increasing the switching speed of the electro-optic device. The overall device size, capacitance and resistance are also reduced as a consequence of using PBGs for lateral mode confinement.
摘要翻译：基于SOI的光子带隙（PBG）电光器件利用图案化的PBG结构来在SOI电光器件的有源波导区域内限定二维波导。在SOI结构中包含PBG柱状阵列导致在波导结构内提供光学模式的非常紧密的侧向约束，从而显着减少光学损耗。通过包括PBG结构，相关联的电触点可以放置在更接近有源区域而不影响光学性能，从而增加电光器件的切换速度。由于使用PBG用于横向模式限制，整个装置尺寸，电容和电阻也减小。

35. 发明申请

US20060140645A1 High-speed, silicon-based electro-optic modulator with feedback control 有权
标题翻译：具有反馈控制功能的高速硅基电光调制器
公开(公告)号：US20060140645A1
公开(公告)日：2006-06-29
申请号：US11362305
申请日：2006-02-22
申请人： Kalpendu Shastri , Prakash Gothoskar , Margaret Ghiron , Vipulkumar Patel , Robert Montgomery , Soham Pathak , Katherine Yanushefski
发明人： Kalpendu Shastri , Prakash Gothoskar , Margaret Ghiron , Vipulkumar Patel , Robert Montgomery , Soham Pathak , Katherine Yanushefski
IPC分类号： H04B10/04 , H04B10/12
CPC分类号： G02F1/025 , G02F1/0121 , G02F1/225 , G02F2001/0152 , H04B10/505 , H04B10/58
摘要： An electro-optic modulator arrangement for achieving switching speeds greater than 1 Gb/s utilizes pre-emphasis pulses to accelerate the change in refractive index of the optical waveguide used to form the electro-optic modulator. In one embodiment, a feedback loop may be added to use a portion of the modulated optical output signal to adjust the magnitude and duration of the pre-emphasis pulses, as well as the various reference levels used for modulated. For free carrier-based electro-optic modulators, including silicon-based electro-optic modulators, the pre-emphasis pulses are used to accelerate the movement of free carriers at the transitions between input signal data values.
摘要翻译：用于实现大于1Gb / s的开关速度的电光调制器装置利用预加重脉冲来加速用于形成电光调制器的光波导的折射率变化。在一个实施例中，可以添加反馈回路以使用调制的光输出信号的一部分来调整预加重脉冲的幅度和持续时间以及用于调制的各种参考电平。对于基于硅的电光调制器的自由载体的电光调制器，预加重脉冲用于加速在输入信号数据值之间的转变处的自由载流子的移动。

36. 发明授权

US07065301B2 High speed, silicon-based electro-optic modulator 有权
标题翻译：高速硅基电光调制器
公开(公告)号：US07065301B2
公开(公告)日：2006-06-20
申请号：US10842064
申请日：2004-05-10
申请人： Kalpendu Shastri , Prakash Gothoskar , Margaret Ghiron , Vipulkumar Patel , Robert Keith Montgomery , Soham Pathak , Katherine A. Yanushefski
发明人： Kalpendu Shastri , Prakash Gothoskar , Margaret Ghiron , Vipulkumar Patel , Robert Keith Montgomery , Soham Pathak , Katherine A. Yanushefski
IPC分类号： H04B10/04 , G02B26/00
CPC分类号： G02F1/025 , G02F1/0121 , G02F1/225 , G02F2001/0152 , H04B10/505 , H04B10/58
摘要： An electro-optic modulator arrangement for achieving switching speeds greater than 1 Gb/s utilizes pre-emphasis pulses to accelerate the change in refractive index of the optical waveguide used to form the electro-optic modulator. In one embodiment, a feedback loop may be added to use a portion of the modulated optical output signal to adjust the magnitude and duration of the pre-emphasis pulses, as well as the various reference levels used for modulated. For free carrier-based electro-optic modulators, including silicon-based electro-optic modulators, the pre-emphasis pulses are used to accelerate the movement of free carriers at the transitions between input signal data values.
摘要翻译：用于实现大于1Gb / s的开关速度的电光调制器装置利用预加重脉冲来加速用于形成电光调制器的光波导的折射率变化。在一个实施例中，可以添加反馈回路以使用调制的光输出信号的一部分来调整预加重脉冲的幅度和持续时间以及用于调制的各种参考电平。对于基于硅的电光调制器的自由载体的电光调制器，预加重脉冲用于加速在输入信号数据值之间的转变处的自由载流子的移动。

37. 发明授权

US07941023B2 Ultra low-loss CMOS compatible silicon waveguides 有权
标题翻译：超低损耗CMOS兼容硅波导
公开(公告)号：US07941023B2
公开(公告)日：2011-05-10
申请号：US11890123
申请日：2007-08-03
申请人： Vipulkumar Patel , David Piede , Margaret Ghiron , Prakash Gothoskar
发明人： Vipulkumar Patel , David Piede , Margaret Ghiron , Prakash Gothoskar
IPC分类号： G02B6/10
CPC分类号： G02F1/025 , G02B6/122 , G02B6/1228 , G02B2006/12061 , G02B2006/12097
摘要： A low loss optical waveguiding structure for silicon-on-insulator (SOI)-based arrangements utilizes a tri-material configuration including a rib/strip waveguide formed of a material with a refractive index less than silicon, but greater than the refractive index of the underlying insulating material. In one arrangement, silicon nitride may be used. The index mismatch between the silicon surface layer (the SOI layer) and the rib/strip waveguide results in a majority of the optical energy remaining within the SOI layer, thus reducing scattering losses from the rib/strip structure (while the rib/strip allows for guiding along a desired signal path to be followed). Further, since silicon nitride is an amorphous material without a grain structure, this will also reduce scattering losses. Advantageously, the use of silicon nitride allows for conventional CMOS fabrication processes to be used in forming both passive and active devices.
摘要翻译：用于绝缘体上硅（SOI）的布置的低损耗光波导结构利用三材料构造，其包括由折射率小于硅的材料形成的肋/条波导，但大于底层绝缘材料。在一种布置中，可以使用氮化硅。硅表面层（SOI层）和肋/条形波导之间的折射率失配导致剩余在SOI层内的大部分光学能量，从而减少了肋/条带结构的散射损耗（而肋/条允许用于沿着要遵循的期望信号路径引导）。此外，由于氮化硅是不具有晶粒结构的无定形材料，所以这也将减少散射损耗。有利地，使用氮化硅允许常规CMOS制造工艺用于形成无源器件和有源器件。

38. 发明申请

US20070280616A1 Ultra low-loss CMOS compatible silicon waveguides 有权
标题翻译：超低损耗CMOS兼容硅波导
公开(公告)号：US20070280616A1
公开(公告)日：2007-12-06
申请号：US11890123
申请日：2007-08-03
申请人： Vipulkumar Patel , David Piede , Margaret Ghiron , Prakash Gothoskar
发明人： Vipulkumar Patel , David Piede , Margaret Ghiron , Prakash Gothoskar
IPC分类号： G02B6/10 , H01L21/62
CPC分类号： G02F1/025 , G02B6/122 , G02B6/1228 , G02B2006/12061 , G02B2006/12097
摘要： A low loss optical waveguiding structure for silicon-on-insulator (SOI)-based arrangements utilizes a tri-material configuration including a rib/strip waveguide formed of a material with a refractive index less than silicon, but greater than the refractive index of the underlying insulating material. In one arrangement, silicon nitride may be used. The index mismatch between the silicon surface layer (the SOI layer) and the rib/strip waveguide results in a majority of the optical energy remaining within the SOI layer, thus reducing scattering losses from the rib/strip structure (while the rib/strip allows for guiding along a desired signal path to be followed). Further, since silicon nitride is an amorphous material without a grain structure, this will also reduce scattering losses. Advantageously, the use of silicon nitride allows for conventional CMOS fabrication processes to be used in forming both passive and active devices.
摘要翻译：用于绝缘体上硅（SOI）的布置的低损耗光波导结构利用三材料构造，其包括由折射率小于硅的材料形成的肋/条波导，但大于底层绝缘材料。在一种布置中，可以使用氮化硅。硅表面层（SOI层）和肋/条形波导之间的折射率失配导致剩余在SOI层内的大部分光学能量，从而减少了肋/条带结构的散射损耗（而肋/条允许用于沿着要遵循的期望信号路径引导）。此外，由于氮化硅是不具有晶粒结构的无定形材料，所以这也将减少散射损耗。有利地，使用氮化硅允许常规CMOS制造工艺用于形成无源器件和有源器件。

39. 发明授权

US07187837B2 Active manipulation of light in a silicon-on-insulator (SOI) structure 有权
标题翻译：主动操纵绝缘体上硅（SOI）结构中的光
公开(公告)号：US07187837B2
公开(公告)日：2007-03-06
申请号：US11069852
申请日：2005-02-28
申请人： Prakash Gothoskar , Margaret Ghiron , Robert Keith Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , Katherine A. Yanushefski
发明人： Prakash Gothoskar , Margaret Ghiron , Robert Keith Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , Katherine A. Yanushefski
IPC分类号： G02B6/26 , G02B6/10 , H01L29/22 , H01L33/00 , H01L27/14 , H01L31/00
CPC分类号： G02B6/12004 , G02F1/025 , G02F1/292 , G02F2001/294
摘要： An arrangement for actively controlling, in two dimensions, the manipulation of light within an SOI-based optical structure utilizes doped regions formed within the SOI layer and a polysilicon layer of a silicon-insulator-silicon capacitive (SISCAP) structure. The regions are oppositely doped so as to form an active device, where the application of a voltage potential between the oppositely doped regions functions to modify the refractive index in the affected area and alter the properties of an optical signal propagating through the region. The doped regions may be advantageously formed to exhibit any desired “shaped” (such as, for example, lenses, prisms, Bragg gratings, etc.), so as to manipulate the propagating beam as a function of the known properties of these devices. One or more active devices of the present invention may be included within a SISCAP formed, SOI-based optical element (such as, for example, a Mach-Zehnder interferometer, ring resonator, optical switch, etc.) so as to form an active, tunable element.
摘要翻译：用于主动地控制SOI基光学结构内的光的操纵的布置利用形成在SOI层内的掺杂区域和硅绝缘体 - 硅电容（SISCAP）结构的多晶硅层。这些区域相反地掺杂以形成有源器件，其中在相对掺杂区域之间施加电压电位用于改变受影响区域中的折射率并改变传播通过该区域的光信号的特性。可以有利地形成掺杂区域以呈现任何期望的“成形”（例如，透镜，棱镜，布拉格光栅等），以便根据这些器件的已知特性来操纵传播光束。本发明的一个或多个有源器件可以包括在形成SISCAP的SOI基光学元件（例如，诸如Mach-Zehnder干涉仪，环形谐振器，光学开关等）中，以形成活跃的，可调元素。

40. 发明申请

US20060133754A1 Ultra low-loss CMOS compatible silicon waveguides 审中-公开
标题翻译：超低损耗CMOS兼容硅波导
公开(公告)号：US20060133754A1
公开(公告)日：2006-06-22
申请号：US11314305
申请日：2005-12-21
申请人： Vipulkumar Patel , David Piede , Margaret Ghiron , Prakash Gothoskar
发明人： Vipulkumar Patel , David Piede , Margaret Ghiron , Prakash Gothoskar
IPC分类号： G02B6/10
CPC分类号： G02F1/025 , G02B6/122 , G02B6/1228 , G02B2006/12061 , G02B2006/12097
摘要： A low loss optical waveguiding structure for silicon-on-insulator (SOI)-based arrangements utilizes a tri-material configuration including a rib/strip waveguide formed of a material with a refractive index less than silicon, but greater than the refractive index of the underlying insulating material. In one arrangement, silicon nitirde may be used. The index mismatch between the silicon surface layer (the SOI layer) and the rib/strip waveguide results in a majority of the optical energy remaining within the SOI layer, thus reducing scattering losses from the rib/strip structure (while the rib/strip allows for guiding along a desired signal path to be followed). Further, since silicon nitirde is an amorphous material without a grain structure, this will also reduce scattering losses. Advantageously, the use of silicon nitride allows for conventional CMOS fabrication processes to be used in forming both passive and active devices.
摘要翻译：用于绝缘体上硅（SOI）的布置的低损耗光波导结构利用三材料构造，其包括由折射率小于硅的材料形成的肋/条波导，但大于底层绝缘材料。在一种布置中，可以使用硅氮化硅。硅表面层（SOI层）和肋/条形波导之间的折射率失配导致剩余在SOI层内的大部分光学能量，从而减少了肋/条带结构的散射损耗（而肋/条允许用于沿着要遵循的期望信号路径引导）。此外，由于硅氮化物是不具有晶粒结构的无定形材料，因此也将降低散射损耗。有利地，使用氮化硅允许常规CMOS制造工艺用于形成无源器件和有源器件。

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