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31. 发明授权

US07755125B2 Semiconductor device including ferroelectric capacitor 有权
标题翻译：半导体器件包括铁电电容器
公开(公告)号：US07755125B2
公开(公告)日：2010-07-13
申请号：US11638420
申请日：2006-12-14
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L29/76
CPC分类号： H01L27/11502 , H01L21/32051 , H01L21/76826 , H01L21/76841 , H01L21/76883 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A semiconductor device includes a ferroelectric capacitor formed above the lower interlevel insulating film covering a MOS transistor formed on a semiconductor substrate, including lamination of a lower electrode, an oxide ferroelectric film, a first upper electrode made of conductive oxide having a stoichiometric composition AOx1 and an actual composition AOx2, a second upper electrode made of conductive oxide having a stoichiometric composition BOy1 and an actual composition BOy2, where y2/y1>x2/x1, and a third upper electrode having a composition containing metal of the platinum group; and a multilayer wiring structure formed above the lower ferroelectric capacitor, and including interlevel insulating films and wirings. Abnormal growth and oxygen vacancies can be prevented which may occur when the upper electrode of the ferroelectric capacitor is made of a conductive oxide film having a low oxidation degree and a conductive oxide film having a high oxidation degree.
摘要翻译：半导体器件包括形成在覆盖形成在半导体衬底上的MOS晶体管的下层间绝缘膜之上的铁电电容器，包括下电极，氧化物铁电膜，由具有化学计量组成AOx1的导电氧化物制成的第一上电极和实际组成AOx2，具有化学计量组成BOy1的导电氧化物和实施组成BOy2的第二上电极，其中y2 / y1> x2 / x1，以及含有铂族金属组成的第三上电极; 以及形成在下层铁电电容器上方的多层布线结构，并且包括层间绝缘膜和布线。可以防止当铁电电容器的上电极由氧化度低的导电氧化物膜和具有高氧化度的导电氧化物膜制成时可能发生异常生长和氧空位。

32. 发明申请

US20100055805A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20100055805A1
公开(公告)日：2010-03-04
申请号：US12548838
申请日：2009-08-27
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L21/316
CPC分类号： H01L21/31691 , H01L27/11507 , H01L28/55
摘要： A semiconductor device manufacturing method includes forming a first film made of a first metal to an upper portion of a substrate, forming a second film made of an amorphous metal oxide or an microcrystalline metal oxide on the first film, subjecting the second film to a heat treatment, subjecting the second film after the heat treatment to a reduction treatment, forming a third film made of a ferroelectric material on the second film, and forming a fourth film made of a second metal on the third film.
摘要翻译：半导体器件制造方法包括：将由第一金属制成的第一膜形成在基板的上部，在第一膜上形成由非晶态金属氧化物或微晶金属氧化物构成的第二膜，对第二膜进行热处理处理后，在热处理后对第二膜进行还原处理，在第二膜上形成由铁电体材料制成的第三膜，在第三膜上形成由第二金属制成的第四膜。

33. 发明申请

US20090321877A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090321877A1
公开(公告)日：2009-12-31
申请号：US12557159
申请日：2009-09-10
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L27/11507 , H01L28/55 , H01L28/65
摘要： A semiconductor device includes a ferroelectric capacitor formed over a semiconductor substrate, wherein the ferroelectric capacitor including a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film, and the upper electrode including a first conductive film formed of a first conductive noble metal oxide, and a second conductive film formed of a metal nitride compound formed on the first conductive film.
摘要翻译：半导体器件包括形成在半导体衬底上的铁电电容器，其中包括下电极的铁电电容器，形成在下电极上的铁电体膜和形成在强电介质膜上的上电极，上电极包括第一导电膜由第一导电贵金属氧化物形成，以及由形成在第一导电膜上的金属氮化物形成的第二导电膜。

34. 发明申请

US20090026514A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090026514A1
公开(公告)日：2009-01-29
申请号：US12240140
申请日：2008-09-29
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L29/94 , H01L21/02
CPC分类号： H01L28/40 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A ferroelectric memory is constituted to comprise a capacitor being formed above a semiconductor substrate (61) and having a ferroelectric film (78) held between a lower electrode (77) and an upper electrode (79), a W plug (72b) electrically connected on its upper surface with the lower electrode (77), and a protective film (76) formed between the W plug (72b) and the lower electrode (77) and made of at least any one kind out of a conductive oxide, a conductive nitride, and a conductive oxynitride. The protective film (76) prevents an orientation of the lower electrode (77) from depending on the W plug (72b), thereby making the orientation of the lower electrode (77) uniform. Accordingly, it is possible to make an orientation of the ferroelectric film (78) to be formed on the lower electrode (77) uniform, which enables to improve an electric characteristic of the ferroelectric capacitor.
摘要翻译：铁电存储器构成为包括在半导体衬底（61）的上方形成并具有保持在下电极（77）和上电极（79）之间的铁电体膜（78）的电容器，电连接在其上表面具有下电极（77）和形成在W插头（72b）和下电极（77）之间并由导电氧化物中的至少一种制成的保护膜（76），导电氮化物和导电氮氧化物。保护膜（76）防止下电极（77）的取向依赖于W插头（72b），从而使下电极（77）的取向均匀。因此，能够使形成在下部电极（77）上的强电介质膜（78）的取向均匀，能够提高强电介质电容器的电特性。

35. 发明授权

US07390678B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07390678B2
公开(公告)日：2008-06-24
申请号：US11094820
申请日：2005-03-31
申请人： Wensheng Wang , Takashi Ando , Yukinobu Hikosaka
发明人： Wensheng Wang , Takashi Ando , Yukinobu Hikosaka
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L21/32136 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： A PLZT film (30) is formed as the material film of a capacitor dielectric film and a top electrode film (31) is formed on the PLZT film (30). The top electrode film (31) comprises two IrOx films having different composition. Subsequently, back face of a semiconductor substrate (11) is cleaned and an Ir adhesion film (32) is formed on the top electrode film (31). Substrate temperature is set at 400° C. or above at that time. Thereafter, a TiN film and a TEOS film are formed sequentially as a hard mask. In such a method, carbon remaining on the top electrode film (31) after cleaning the back face is discharged into the chamber while the temperature of the semiconductor substrate (11) is kept at 400° C. or above in order to form the Ir adhesion film (32). Consequently, adhesion is enhanced between a TiN film being formed subsequently and the Ir adhesion film (32) thus preventing the TiN film from being stripped.
摘要翻译：形成PLZT膜（30）作为电容器电介质膜的材料膜，并且在PLZT膜（30）上形成顶部电极膜（31）。顶部电极膜（31）包括具有不同组成的两个IrO x膜。随后，清洁半导体衬底（11）的背面并在顶部电极膜（31）上形成Ir粘附膜（32）。此时基板温度设定在400℃以上。此后，依次形成TiN膜和TEOS膜作为硬掩模。在这种方法中，清洁背面后残留在顶部电极膜（31）上的碳被排出到室内，同时半导体衬底（11）的温度保持在400℃以上，以形成Ir 粘合膜（32）。因此，随后形成的TiN膜与Ir粘附膜（32）之间的粘附性增强，从而防止TiN膜被剥离。

36. 发明授权

US07311754B2 Molecular decomposition processes for the synthesis of nanosize metallic powders 有权
标题翻译：用于合成纳米尺寸金属粉末的分子分解过程
公开(公告)号：US07311754B2
公开(公告)日：2007-12-25
申请号：US10960433
申请日：2004-10-06
申请人： Anil Vasudeo Virkar , Wensheng Wang
发明人： Anil Vasudeo Virkar , Wensheng Wang
IPC分类号： B22F9/16
CPC分类号： B22F1/0018 , B22F9/16 , B82Y30/00 , C01B13/14 , C01F7/02 , C01F17/0043 , C01G23/047 , C01G23/053 , C01G25/02 , C01G31/02 , C01G37/02 , C01G37/033 , C01P2002/34 , C01P2002/52 , C01P2002/72 , C01P2004/03 , C01P2004/64 , C04B35/48 , C04B35/50 , C04B35/6261 , C04B35/62625 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/528
摘要： A method for synthesizing nanosize metallic powders can include providing a metallic precursor. The metallic precursor can include a metal alloy formed having a fugitive constituent and a target metal. The fugitive constituent and target metal are chosen such that the fugitive constituent can be selectively dissolved or removed by leaching with an appropriate solvent while leaving the target metal undissolved. The fugitive constituent can be leached from the metallic precursor to leave a metallic residue which is a mass of nanosize metallic particles made substantially of the target metal. The nanosize metallic particles can then be recovered from the metallic residue either merely by removing the solvent and/or breaking up the mass of nanosize metallic particles. The disclosed methods allow for a convenient avenue for production of nanosize particles from readily formed materials for use in a wide variety of potential industrial and commercial applications.
摘要翻译：合成纳米尺寸金属粉末的方法可以包括提供金属前体。金属前体可以包括形成具有挥发成分和目标金属的金属合金。选择挥发性成分和目标金属，使得可以通过用合适的溶剂浸出来选择性地溶解或除去挥发成分，同时使目标金属不溶解。可以从金属前体中浸出挥发成分以留下金属残留物，这是一种基本上由目标金属制成的纳米尺寸金属颗粒。然后可以通过除去溶剂和/或分解纳米尺寸金属颗粒的质量，从金属残余物中回收纳米尺寸金属颗粒。所公开的方法允许从用于各种潜在工业和商业应用的容易形成的材料制备纳米尺寸颗粒的方便的途径。

37. 发明授权

US07297999B1 Semiconductor device with capacitors and its manufacture method 有权
标题翻译：具有电容器的半导体器件及其制造方法
公开(公告)号：US07297999B1
公开(公告)日：2007-11-20
申请号：US11589758
申请日：2006-10-31
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L28/57 , H01L27/11502 , H01L27/11507 , H01L28/65 , H01L28/75
摘要： An interlayer insulating film (22) is formed on a semiconductor substrate. A conductive plug (25) is embedded in a via hole formed through the interlayer insulating film. An oxygen barrier conductive film (33) is formed on the interlayer insulating film and being inclusive of an area of the conductive plug as viewed in plan. A capacitor (35) laminating a lower electrode, a dielectric film and an upper electrode in this order is formed on the oxygen barrier film. An intermediate layer (34) is disposed at an interface between the oxygen barrier film and the lower electrode. The intermediate layer is made of alloy which contains at least one constituent element of the oxygen barrier film and at least one constituent element of the lower electrode.
摘要翻译：在半导体衬底上形成层间绝缘膜（22）。导电插头（25）嵌入通过层间绝缘膜形成的通孔中。在层间绝缘膜上形成氧阻隔导电膜（33），并且包括在平面图中所示的导电插塞的区域。在氧阻隔膜上形成依次层叠下电极，电介质膜和上电极的电容器（35）。中间层（34）设置在氧阻隔膜和下电极之间的界面处。中间层由含有氧阻隔膜的至少一种构成元素和下电极的至少一种构成元素的合金制成。

38. 发明申请

US20060273367A1 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060273367A1
公开(公告)日：2006-12-07
申请号：US11496639
申请日：2006-08-01
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/60
摘要： A ferroelectric capacitor having a bottom electrode (9a), a ferroelectric film (10a) and a top electrode (11a) is formed above a semiconductor substrate (1). The ferroelectric film (10a) is constituted of CSPZT with 0.1-5 mol % of La and 0.1-5 mol % of Nb.
摘要翻译：在半导体衬底（1）的上方形成具有底部电极（9a），铁电体膜（10a）和顶部电极（11a）的铁电电容器。铁电体膜（10a）由具有0.1-5mol％的La和0.1-5mol％的Nb的CSPZT构成。

39. 发明申请

US20060214208A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20060214208A1
公开(公告)日：2006-09-28
申请号：US11443136
申请日：2006-05-31
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L29/94
CPC分类号： H01L27/11507 , G11C11/22 , H01L27/11502 , H01L28/57 , H01L28/65
摘要： A Pt film (24), a PLZT film (25), and a top electrode film (26) are formed above a semiconductor substrate (11). Next, the top electrode film (26) is patterned. Then, a PLZT film (27) covering an exposed portion of the PLZT film (25) is formed as an evaporation preventing film. Then, heat treatment is performed in an oxidative atmosphere to recover damage sustained to the PLZT film (25). Heat treatment is not performed between patterning of the top electrode film (26) and formation of the PLZT film (27). Thereafter, a ferroelectric capacitor is formed by patterning the PLZT film (25) and the Pt film (24).
摘要翻译：在半导体衬底（11）的上方形成Pt膜（24），PLZT膜（25）和顶部电极膜（26）。接下来，对顶部电极膜（26）进行图案化。然后，形成覆盖PLZT膜（25）的露出部分的PLZT膜（27）作为防蒸镀膜。然后，在氧化气氛中进行热处理，以回收对PLZT膜（25）的损伤。在图案化顶部电极膜（26）和PLZT膜（27）的形成之间不进行热处理。此后，通过使PLZT膜（25）和Pt膜（24）构图来形成铁电电容器。

40. 发明申请

US20060043445A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060043445A1
公开(公告)日：2006-03-02
申请号：US11023576
申请日：2004-12-29
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A lower electrode film is formed above a semiconductor substrate first, and then a ferroelectric film is formed on the lower electrode film. After that, an upper electrode film is formed on the ferroelectric film. When forming the upper electrode, an IrOx film containing crystallized small crystals when formed is formed on the ferroelectric film first, and then an IrOx film containing columnar crystals is formed.
摘要翻译：首先在半导体基板的上方形成下电极膜，然后在下电极膜上形成铁电体膜。之后，在铁电体膜上形成上部电极膜。当形成上电极时，首先在铁电体膜上形成含有结晶化的小晶体的IrO x膜，然后形成含有柱状晶体的IrO x膜。

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