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31. 发明申请

US20110039355A1 Plasma Generation Controlled by Gravity-Induced Gas-Diffusion Separation (GIGDS) Techniques 有权
标题翻译：通过重力诱导气体扩散分离（GIGDS）技术控制的等离子体发生
公开(公告)号：US20110039355A1
公开(公告)日：2011-02-17
申请号：US12853771
申请日：2010-08-10
申请人： Jianping Zhao , Lee Chen , Merritt Funk , Toshihisa Nozawa
发明人： Jianping Zhao , Lee Chen , Merritt Funk , Toshihisa Nozawa
IPC分类号： H01L21/66
CPC分类号： H01J37/3244 , H01J37/32192 , H01L21/31116 , H01L21/32137
摘要： The invention can provide apparatus and methods of processing a substrate using plasma generation by gravity-induced gas-diffusion separation techniques. By adding or using gases including inert and process gases with different gravities (i.e., ratio between the molecular weight of a gaseous constituent and a reference molecular weight), a two-zone or multiple-zone plasma can be formed, in which one kind of gas can be highly constrained near a plasma generation region and another kind of gas can be largely separated from the aforementioned gas due to differential gravity induced diffusion and is constrained more closer to a wafer process region than the aforementioned gas.
摘要翻译：本发明可以提供使用通过重力引起的气体扩散分离技术的等离子体生成来处理衬底的装置和方法。通过添加或使用气体，包括不同重量的惰性气体和工艺气体（即气态成分的分子量与参考分子量之间的比例），可以形成两区或多区等离子体，其中一种气体可以在等离子体产生区域附近被高度约束，并且由于差分重力感应扩散，另一种气体可以与上述气体大大分离，并且比上述气体更受限于更接近于晶片工艺区域。

32. 发明授权

US08323521B2 Plasma generation controlled by gravity-induced gas-diffusion separation (GIGDS) techniques 有权
标题翻译：通过重力诱导的气体扩散分离（GIGDS）技术控制的等离子体发生
公开(公告)号：US08323521B2
公开(公告)日：2012-12-04
申请号：US12853771
申请日：2010-08-10
申请人： Jianping Zhao , Lee Chen , Merritt Funk , Toshihisa Nozawa
发明人： Jianping Zhao , Lee Chen , Merritt Funk , Toshihisa Nozawa
IPC分类号： H01L21/66
CPC分类号： H01J37/3244 , H01J37/32192 , H01L21/31116 , H01L21/32137
摘要： The invention can provide apparatus and methods of processing a substrate using plasma generation by gravity-induced gas-diffusion separation techniques. By adding or using gases including inert and process gases with different gravities (i.e., ratio between the molecular weight of a gaseous constituent and a reference molecular weight), a two-zone or multiple-zone plasma can be formed, in which one kind of gas can be highly constrained near a plasma generation region and another kind of gas can be largely separated from the aforementioned gas due to differential gravity induced diffusion and is constrained more closer to a wafer process region than the aforementioned gas.
摘要翻译：本发明可以提供使用通过重力引起的气体扩散分离技术的等离子体生成来处理衬底的装置和方法。通过添加或使用气体，包括不同重量的惰性气体和工艺气体（即气态成分的分子量与参考分子量之间的比例），可以形成两区或多区等离子体，其中一种气体可以在等离子体产生区域附近被高度约束，并且由于差分重力感应扩散，另一种气体可以与上述气体大大分离，并且比上述气体更受限于更接近于晶片工艺区域。

33. 发明授权

US09117764B2 Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element 有权
标题翻译：蚀刻方法，基板处理方法，图案形成方法，半导体元件的制造方法以及半导体元件
公开(公告)号：US09117764B2
公开(公告)日：2015-08-25
申请号：US13819038
申请日：2011-07-29
申请人： Takaaki Matsuoka , Toshihisa Nozawa , Toshiyasu Hori
发明人： Takaaki Matsuoka , Toshihisa Nozawa , Toshiyasu Hori
IPC分类号： H01L21/302 , H01L21/308 , H01J37/32 , H01L21/02 , H01L21/027 , H01L21/311 , G03F7/004 , G03F7/075 , G03F7/09 , G03F7/20
CPC分类号： H01L21/3081 , G03F7/0046 , G03F7/0752 , G03F7/094 , G03F7/2041 , H01J37/32192 , H01L21/0212 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0276 , H01L21/3086 , H01L21/31111 , H01L21/31122
摘要： A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.
摘要翻译：在作为被处理基板的硅基板上形成氟碳层（步骤A）。在这样形成的碳氟化合物层上形成抗蚀剂层（步骤B）。然后，通过使抗蚀剂层通过光致抗蚀剂层曝光（步骤C）将抗蚀剂层图案化为预定的形状。使用图案化为预定形状的抗蚀剂层作为掩模来蚀刻氟碳层（步骤D）。接下来，除去作为掩模的抗蚀剂层（步骤E）。之后，使用残留的氟碳层作为掩模蚀刻硅衬底（步骤F）。由于碳氟化合物层本身作为抗反射膜和危害掩模起作用，所以可以提高处理的可靠性，同时降低成本。

34. 发明授权

US08967082B2 Plasma processing apparatus and gas supply device for plasma processing apparatus 有权
标题翻译：等离子体处理装置和等离子体处理装置的气体供给装置
公开(公告)号：US08967082B2
公开(公告)日：2015-03-03
申请号：US13496540
申请日：2010-09-14
申请人： Masahide Iwasaki , Toshihisa Nozawa
发明人： Masahide Iwasaki , Toshihisa Nozawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01L21/02 , C23C16/455 , H01L21/28
CPC分类号： H01L21/02274 , C23C16/45517 , C23C16/45536 , H01L21/02164 , H01L21/0217 , H01L21/0228 , H01L21/28194
摘要： A plasma processing apparatus 31 includes a processing chamber 32; a gas supply unit 33 for supplying a plasma processing gas into a processing chamber 32; a mounting table 34 configured to hold the target substrate W thereon; a plasma generating device 39 configured to generate plasma within the processing chamber 32; and a gas supply device 61. The gas supply device 61 includes a head unit 62 configured to move between a first position above the mounting table 34 and a second position different from the first position and to supply a gas, and the head unit 62 is configured to supply a film forming gas to a small-volume region formed between the mounting table 34 and the head unit 62 when the head unit 62 is positioned at the first position and to adsorb the film forming gas on the target substrate W.
摘要翻译：等离子体处理装置31包括处理室32; 用于将等离子体处理气体供给到处理室32中的气体供给单元33; 配置成将目标基板W保持在其上的安装台34; 构造成在处理室32内产生等离子体的等离子体产生装置39; 气体供给装置61.气体供给装置61包括头单元62，其构造成在安装台34上方的第一位置和与第一位置不同的第二位置之间移动并供给气体，头单元62为构造成当头单元62位于第一位置时，将成膜气体供给到形成在安装台34和头单元62之间的小体积区域，并将成膜气体吸附在目标基板W上。

35. 发明授权

US08915999B2 Shower plate sintered integrally with gas release hole member and method for manufacturing the same 有权
标题翻译：与气体释放孔构件一体烧结的淋浴板及其制造方法
公开(公告)号：US08915999B2
公开(公告)日：2014-12-23
申请号：US12446913
申请日：2007-09-26
申请人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
发明人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
IPC分类号： C23C16/455 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/3244 , C23C16/45565 , C23C16/45568 , H01J37/32192 , H01J37/32449 , H01J37/32477 , H01J37/3255
摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.
摘要翻译：喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

36. 发明申请

US20120186521A1 PLASMA PROCESSING APPARATUS AND GAS SUPPLY DEVICE FOR PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体处理装置的等离子体加工装置和气体供应装置
公开(公告)号：US20120186521A1
公开(公告)日：2012-07-26
申请号：US13496540
申请日：2010-09-14
申请人： Masahide Iwasaki , Toshihisa Nozawa
发明人： Masahide Iwasaki , Toshihisa Nozawa
IPC分类号： C23C16/50 , C23C16/511
CPC分类号： H01L21/02274 , C23C16/45517 , C23C16/45536 , H01L21/02164 , H01L21/0217 , H01L21/0228 , H01L21/28194
摘要： A plasma processing apparatus 31 includes a processing chamber 32; a gas supply unit 33 for supplying a plasma processing gas into a processing chamber 32; a mounting table 34 configured to hold the target substrate W thereon; a plasma generating device 39 configured to generate plasma within the processing chamber 32; and a gas supply device 61. The gas supply device 61 includes a head unit 62 configured to move between a first position above the mounting table 34 and a second position different from the first position and to supply a gas, and the head unit 62 is configured to supply a film forming gas to a small-volume region formed between the mounting table 34 and the head unit 62 when the head unit 62 is positioned at the first position and to adsorb the film forming gas on the target substrate W.
摘要翻译：等离子体处理装置31包括处理室32; 用于将等离子体处理气体供给到处理室32中的气体供给单元33; 配置成将目标基板W保持在其上的安装台34; 构造成在处理室32内产生等离子体的等离子体产生装置39; 气体供给装置61.气体供给装置61包括头单元62，其构造成在安装台34上方的第一位置和与第一位置不同的第二位置之间移动并供给气体，头单元62为构造成当头单元62位于第一位置时，将成膜气体供给到形成在安装台34和头单元62之间的小体积区域，并将成膜气体吸附在目标基板W上。

37. 发明申请

US20120111427A1 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, METHOD FOR CLEANING PLASMA PROCESSING APPARATUS AND PRESSURE CONTROL VALVE FOR PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体处理装置，等离子体处理方法，等离子体处理装置的清洗方法和等离子体处理装置的压力控制阀
公开(公告)号：US20120111427A1
公开(公告)日：2012-05-10
申请号：US13061356
申请日：2009-08-27
申请人： Toshihisa Nozawa , Shinji Komoto , Masahide Iwasaki
发明人： Toshihisa Nozawa , Shinji Komoto , Masahide Iwasaki
IPC分类号： F16K15/00 , B08B5/00
CPC分类号： C23C16/4412 , C23C16/50 , C23C16/511 , C23C16/52 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01J37/32862 , Y10T137/7837
摘要： A plasma processing apparatus is provided with a first exhaust path which extends downward from an exhaust hole; a second exhaust path which is connected to a downstream end portion of the first exhaust path in the exhausting direction and extends in a direction perpendicular to a direction in which the first exhaust path extends, and whose cross-section, which orthogonally intersects with the exhausting direction, is horizontally long such that a widthwise length is greater than a vertical length in the cross-section; a third exhaust path which is connected to a downstream end portion of the second exhaust path in the exhausting direction and extends in a direction perpendicular to the direction in which the second exhaust path extends; a pump which is connected to a downstream end portion of the third exhaust path in the exhausting direction and depressurizes an inside of a processing container; a pressure control valve which is provided in the second exhaust path, and comprises a pressure control valve plate which is capable of closing the second exhaust path and controls a pressure at upstream and downstream sides in the exhausting direction; and a shut-off valve which is provided in the third exhaust path and comprises a shut-off valve plate which opens and closes the third exhaust path.
摘要翻译：等离子体处理装置设置有从排气孔向下延伸的第一排气路径; 第二排气通道，其沿着排气方向连接到第一排气通路的下游端部，并且沿与第一排气通路延伸的方向垂直的方向延伸，其横截面与排气通道方向为水平长，使得宽度方向长度大于横截面中的垂直长度; 第三排气路径，其沿排气方向连接到第二排气路径的下游端部，并且沿与第二排气通路延伸的方向垂直的方向延伸; 泵，其在排气方向上连接到第三排气路径的下游端部，并且减压处理容器的内部; 设置在第二排气路径中的压力控制阀，包括能够关闭第二排气通路并控制排气方向上游侧和下游侧的压力的压力控制阀板; 以及截止阀，其设置在所述第三排气路径中并且包括打开和关闭所述第三排气路径的截止阀板。

38. 发明授权

US08173928B2 Processing device 有权
标题翻译：处理装置
公开(公告)号：US08173928B2
公开(公告)日：2012-05-08
申请号：US12161591
申请日：2007-03-05
申请人： Toshihisa Nozawa , Tamaki Yuasa
发明人： Toshihisa Nozawa , Tamaki Yuasa
IPC分类号： B23K10/00
CPC分类号： H01L21/67126 , C23C16/4412 , C23C16/511 , C23C16/52 , H01J37/32834 , H01L21/67017 , Y10T137/85978
摘要： In a processing apparatus for performing a specified process on a target object at a predetermined process pressure, the apparatus includes an evacuable processing chamber having a gas exhaust port formed in a bottom portion thereof; a mounting table provided within the processing chamber for holding the target object; a pressure control valve connected to the gas exhaust port, the pressure control valve including a slide-type valve body for changing an area of an opening region of a valve port; and a gas exhaust system connected to the pressure control valve. The pressure control valve is eccentrically arranged such that a center axis of the mounting table lies within an opening region of the pressure control valve formed over a practical use region of a valve opening degree of the pressure control valve.
摘要翻译：在用于以预定处理压力对目标物体进行特定处理的处理装置中，该装置包括：排气口，其具有形成在其底部的排气口; 设置在处理室内用于保持目标物体的安装台; 连接到排气口的压力控制阀，所述压力控制阀包括用于改变阀口的开口区域的面积的滑动式阀体; 以及连接到压力控制阀的排气系统。压力控制阀偏心地布置成使得安装台的中心轴线位于在压力控制阀的阀开度的实际使用区域上形成的压力控制阀的开口区域内。

39. 发明授权

US08052887B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US08052887B2
公开(公告)日：2011-11-08
申请号：US12689815
申请日：2010-01-19
申请人： Toshihisa Nozawa , Tamaki Yuasa
发明人： Toshihisa Nozawa , Tamaki Yuasa
IPC分类号： C23C16/44 , C23C16/00
CPC分类号： H01J37/32834 , C23C16/4405 , C23C16/511 , H01J37/3244 , H01J37/32862
摘要： When plasma processing is finished, a gate valve 13a is closed and cleaning gas is ejected from holes 121a of a shower plate 121, and at the same time, a microwave is generated from a microwave generator 101. Further, at this time, the inside of a process chamber 110 is exhausted through a second exhaust port 106. Since the exhaust is conducted through a second exhaust port 106 positioned lower than a wafer stage 104 in a lowered state when the inside of the process chamber 110 is cleaned, it is possible to more effectively remove gas and reaction products deposited especially in a lower portion of the process chamber 110.
摘要翻译：当等离子体处理完成时，关闭闸阀13a，并且从喷淋板121的孔121a喷射清洁气体，同时从微波发生器101产生微波。此外，此时，内部处理室110通过第二排气口106排出。由于当处理室110的内部被清洁时，排气通过位于低于晶片台104的第二排气口106处于降低状态，所以可能以更有效地去除特别沉积在处理室110下部的气体和反应产物。

40. 发明授权

US07940009B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07940009B2
公开(公告)日：2011-05-10
申请号：US12274650
申请日：2008-11-20
申请人： Kiyotaka Ishibashi , Toshihisa Nozawa
发明人： Kiyotaka Ishibashi , Toshihisa Nozawa
IPC分类号： H01B31/26 , C23C16/00
CPC分类号： H01J37/32192 , H01J37/32238
摘要： A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector means.
摘要翻译：等离子体处理装置包括用于在内部进行等离子体处理的室，由用于密封该室的上侧的电介质材料制成的顶板和用作将高频波供应到室中的高频电源的天线部分通过这个顶板。顶板在其内设有反射构件。反射部件的侧壁作为反射用于反射在顶板内部沿半径方向传播的高频波的波反射体。或者，不能以顶板的凹部的侧壁用作波反射器装置的方式设置反射部件。

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