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31. 发明授权

US07023016B2 Thin film transistor array panel and manufacturing method thereof 有权
公开(公告)号：US07023016B2
公开(公告)日：2006-04-04
申请号：US10884083
申请日：2004-07-01
申请人： Jeong-Young Lee , Se-Hwan Yu , Sang-Jin Jeon , Min-Wook Park
发明人： Jeong-Young Lee , Se-Hwan Yu , Sang-Jin Jeon , Min-Wook Park
IPC分类号： H01L29/04
CPC分类号： H01L27/12 , G02F1/13458 , G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2001/13629 , H01L27/124 , H01L27/1288
摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode on the first portion of the lower conductive film; removing the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.

32. 发明申请

US20050110014A1 Thin film transistor array panel and manufacturing method thereof 有权
公开(公告)号：US20050110014A1
公开(公告)日：2005-05-26
申请号：US10922343
申请日：2004-08-19
申请人： Min-Wook Park , Bum-Ki Baek , Jeong-Young Lee , Kwon-Young Choi , Sang-Ki Kwak , Sang-Jin Jeon
发明人： Min-Wook Park , Bum-Ki Baek , Jeong-Young Lee , Kwon-Young Choi , Sang-Ki Kwak , Sang-Jin Jeon
IPC分类号： G02F1/1339 , G02F1/136 , G02F1/1368 , G09F9/00 , G09F9/30 , H01L21/00 , H01L21/3205 , H01L21/3213 , H01L21/336 , H01L21/77 , H01L21/84 , H01L23/52 , H01L29/417 , H01L29/786 , H01L31/036
CPC分类号： H01L29/41733 , H01L27/124
摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode on the first portion of the lower conductive film; removing the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.

33. 发明授权

US09123589B2 Display substrate including an auxiliary electrode 有权
标题翻译：显示基板，包括辅助电极
公开(公告)号：US09123589B2
公开(公告)日：2015-09-01
申请号：US13422686
申请日：2012-03-16
申请人： Min-Wook Park , Jong-In Kim , Jun-Ho Song , Bum-Ki Baek , Young-Soo Yoon
发明人： Min-Wook Park , Jong-In Kim , Jun-Ho Song , Bum-Ki Baek , Young-Soo Yoon
IPC分类号： G02F1/1333 , H01L33/08 , H01L27/12 , G02F1/1362
CPC分类号： H01L27/124 , G02F1/1362 , H01L27/1255
摘要： A display substrate includes a data line, a main gate line, and a first sub-pixel electrode formed on a base substrate. The display substrate further includes a first switching element connected to the data line. The display substrate further includes a second switching element connected to the data line, the main gate line, and a second sub-pixel electrode spaced apart from the first sub-pixel electrode. The display substrate further includes a third switching element connected to the data line and a secondary gate line adjacent to the main gate line. The display substrate further includes a shielding line spaced apart from the first and second sub-pixel electrodes, the shielding line overlapping the data line and receiving a reference voltage. The display substrate further includes an auxiliary electrode extending from the shielding line and overlapping an end electrode connected to the third switching element.
摘要翻译：显示基板包括形成在基底基板上的数据线，主栅线和第一子像素电极。显示基板还包括连接到数据线的第一开关元件。显示基板还包括连接到数据线，主栅极线和与第一子像素电极间隔开的第二子像素电极的第二开关元件。显示基板还包括连接到数据线的第三开关元件和与主栅极线相邻的次级栅极线。显示基板还包括与第一和第二子像素电极间隔开的屏蔽线，屏蔽线与数据线重叠并接收参考电压。显示基板还包括从屏蔽线延伸并与连接到第三开关元件的端电极重叠的辅助电极。

34. 发明授权

US08912991B2 Liquid crystal display and driving method thereof 有权
标题翻译：液晶显示及其驱动方法
公开(公告)号：US08912991B2
公开(公告)日：2014-12-16
申请号：US13188898
申请日：2011-07-22
申请人： Jong-In Kim , Min-Wook Park , Eun-Guk Lee , Young-Goo Song , Kyoung-Tai Han , Hyuk-Jin Kim , Hak-Bum Choi , Hyo-Seop Kim
发明人： Jong-In Kim , Min-Wook Park , Eun-Guk Lee , Young-Goo Song , Kyoung-Tai Han , Hyuk-Jin Kim , Hak-Bum Choi , Hyo-Seop Kim
IPC分类号： G09G3/04 , G09G3/36
CPC分类号： G09G3/3659 , G09G2300/0426 , G09G2300/0447 , G09G2300/0852 , G09G2300/0876
摘要： A liquid crystal display includes: a first gate line; a first data line crossing the first gate line; a first switching element connected with the first gate line and the first data line; a second switching element connected with the first gate line and the first data line; a first liquid crystal capacitor connected with the first switching element; a second liquid crystal capacitor connected with the second switching element; a boost switching element which is turned on during a time period not overlapping a time period during which the first switching element is turned on; and a boost capacitor including a first terminal connected with the boost switching element and a second terminal connected with the first liquid crystal capacitor.
摘要翻译：液晶显示器包括：第一栅极线; 与第一栅极线交叉的第一数据线; 与第一栅极线和第一数据线连接的第一开关元件; 与第一栅极线和第一数据线连接的第二开关元件; 与第一开关元件连接的第一液晶电容器; 与第二开关元件连接的第二液晶电容器; 升压开关元件，其在与第一开关元件导通的时间段不重叠的时间段内导通; 以及升压电容器，包括与所述升压开关元件连接的第一端子和与所述第一液晶电容器连接的第二端子。

35. 发明申请

US20110242468A1 PIXEL ELECTRODE PANEL, A LIQUID CRYSTAL DISPLAY PANEL ASSEMBLY AND METHODS FOR MANUFACTURING THE SAME 有权
标题翻译：像素电极面板，液晶显示面板组件及其制造方法
公开(公告)号：US20110242468A1
公开(公告)日：2011-10-06
申请号：US13018872
申请日：2011-02-01
申请人： Kyong-Sik Choi , Myung-Jae Park , Min-Wook Park , Sung-Hoon Kim , Gak-Seok Lee , Woo-Jung Shin , Jun-Hyup Lee , Keun-Chan Oh , Sang-Gyun Kim , Su-Jeong Kim , Seung-Beom Park , Youn-Hak Jeong
发明人： Kyong-Sik Choi , Myung-Jae Park , Min-Wook Park , Sung-Hoon Kim , Gak-Seok Lee , Woo-Jung Shin , Jun-Hyup Lee , Keun-Chan Oh , Sang-Gyun Kim , Su-Jeong Kim , Seung-Beom Park , Youn-Hak Jeong
IPC分类号： G02F1/1337 , G02F1/1343 , C08J7/18 , C08F2/50
CPC分类号： G02F1/134309 , C08G8/12 , C08G73/12 , G02F1/133707 , G02F1/133723 , G02F1/133753 , G02F1/133788 , G02F1/1393 , G02F2001/133531 , G02F2001/133742 , G02F2001/133746 , G02F2001/133761
摘要： A liquid crystal display panel, including: a pixel electrode formed on a first substrate; an alignment layer formed on the pixel electrode, wherein the alignment layer includes an alignment layer material and aligns first liquid crystal molecules in a direction substantially perpendicular to the pixel electrode; and a photo hardening layer formed on the alignment layer, wherein the photo hardening layer includes a photo hardening layer material and aligns second liquid crystal molecules to be tilted with respect to the pixel electrode, wherein the alignment layer material and the photo hardening layer material have different polarities from each other.
摘要翻译：一种液晶显示面板，包括：形成在第一基板上的像素电极; 形成在所述像素电极上的取向层，其中所述取向层包括取向层材料，并且在基本上垂直于所述像素电极的方向上对准所述第一液晶分子; 以及形成在取向层上的光硬化层，其中，所述光硬化层包括光硬化层材料，并且使所述第二液晶分子相对于所述像素电极倾斜，其中所述取向层材料和所述光硬化层材料具有不同的极性彼此。

36. 发明授权

US07960732B2 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07960732B2
公开(公告)日：2011-06-14
申请号：US12082495
申请日：2008-04-11
申请人： Jeong-Young Lee , Se-Hwan Yu , Sang-Jin Jeon , Min-Wook Park
发明人： Jeong-Young Lee , Se-Hwan Yu , Sang-Jin Jeon , Min-Wook Park
IPC分类号： H01L29/04
CPC分类号： H01L27/12 , G02F1/13458 , G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2001/13629 , H01L27/124 , H01L27/1288
摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode on the first portion of the lower conductive film; removing the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法，包括：在基板上形成栅极线; 在栅极线上依次沉积栅极绝缘层和半导体层; 在半导体层上沉积下导电膜和上导电膜; 对上导电膜，下导电膜和半导体层进行光蚀刻; 沉积钝化层; 对所述钝化层进行光蚀刻以暴露所述上导电膜的第一和第二部分; 去除上导电膜的第一和第二部分以暴露下导电膜的第一和第二部分; 在所述下导电膜的第一部分上形成像素电极; 去除下导电膜的第二部分以暴露半导体层的一部分; 以及在半导体层的暴露部分上形成柱状间隔物。

37. 发明授权

US07609347B2 Liquid crystal display and method thereof 有权
标题翻译：液晶显示器及其方法
公开(公告)号：US07609347B2
公开(公告)日：2009-10-27
申请号：US11862567
申请日：2007-09-27
申请人： Jeong-Ho Lee , Min-Wook Park
发明人： Jeong-Ho Lee , Min-Wook Park
IPC分类号： G02F1/1337
CPC分类号： G02F1/133707 , G02F1/1343 , G02F2201/122
摘要： A liquid crystal display (“LCD”) includes a first substrate, a second substrate, and a liquid crystal layer interposed between the first and second substrates. A pixel electrode is formed on the first substrate and provided with a first domain divider. A common electrode is formed on the second substrate and provided with a second domain divider. The second domain divider extends in a first direction and a second direction symmetric with the first direction in order to have a curved portion of the second domain divider. The common electrode has a concavo-convex portion in a saw-toothed shape in a plan view of the common electrode, and the concavo-convex portion is positioned in a region where the curved portion is formed.
摘要翻译：液晶显示器（“LCD”）包括第一基板，第二基板和介于第一和第二基板之间的液晶层。像素电极形成在第一基板上并且设置有第一畴分隔器。公共电极形成在第二基板上并且设置有第二畴分隔器。第二畴分隔器沿第一方向延伸，第二方向与第一方向对称，以便具有第二畴分隔器的弯曲部分。公共电极在公共电极的平面图中具有锯齿状的凹凸部，凹凸部位于形成有弯曲部的区域。

38. 发明申请

US20080191212A1 Thin film transistor array panel and manufacturing methd thereof 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20080191212A1
公开(公告)日：2008-08-14
申请号：US12082495
申请日：2008-04-11
申请人： Jeong-Young Lee , Se-Hwan Yu , Sang-Jin Jeon , Min-Wook Park
发明人： Jeong-Young Lee , Se-Hwan Yu , Sang-Jin Jeon , Min-Wook Park
IPC分类号： H01L29/04
CPC分类号： H01L27/12 , G02F1/13458 , G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2001/13629 , H01L27/124 , H01L27/1288
摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode on the first portion of the lower conductive film; removing the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法，包括：在基板上形成栅极线; 在栅极线上依次沉积栅极绝缘层和半导体层; 在半导体层上沉积下导电膜和上导电膜; 对上导电膜，下导电膜和半导体层进行光蚀刻; 沉积钝化层; 对所述钝化层进行光蚀刻以暴露所述上导电膜的第一和第二部分; 去除上导电膜的第一和第二部分以暴露下导电膜的第一和第二部分; 在所述下导电膜的第一部分上形成像素电极; 去除下导电膜的第二部分以暴露半导体层的一部分; 以及在半导体层的暴露部分上形成柱状间隔物。

39. 发明申请

US20060172472A1 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20060172472A1
公开(公告)日：2006-08-03
申请号：US11395434
申请日：2006-03-30
申请人： Jeong-Young Lee , Se-Hwam Yu , Sang-Jin Jeon , Min-Wook Park
发明人： Jeong-Young Lee , Se-Hwam Yu , Sang-Jin Jeon , Min-Wook Park
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L27/12 , G02F1/13458 , G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2001/13629 , H01L27/124 , H01L27/1288
摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode on the first portion of the lower conductive film; removing the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法，包括：在基板上形成栅极线; 在栅极线上依次沉积栅极绝缘层和半导体层; 在半导体层上沉积下导电膜和上导电膜; 对上导电膜，下导电膜和半导体层进行光蚀刻; 沉积钝化层; 对所述钝化层进行光蚀刻以暴露所述上导电膜的第一和第二部分; 去除上导电膜的第一和第二部分以暴露下导电膜的第一和第二部分; 在所述下导电膜的第一部分上形成像素电极; 去除下导电膜的第二部分以暴露半导体层的一部分; 以及在半导体层的暴露部分上形成柱状间隔物。

40. 发明申请

US20050082535A1 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20050082535A1
公开(公告)日：2005-04-21
申请号：US10926719
申请日：2004-08-26
申请人： Min-Wook Park , Sang-Jin Jeon , Jung-Joon Park , Jeong-Young Lee , Bum-Ki Baek , Se-Hwan Yu , Sang-Ki Kwak , Han-Ju Lee , Kwon-Young Choi
发明人： Min-Wook Park , Sang-Jin Jeon , Jung-Joon Park , Jeong-Young Lee , Bum-Ki Baek , Se-Hwan Yu , Sang-Ki Kwak , Han-Ju Lee , Kwon-Young Choi
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1339 , G02F1/1368 , G03C1/85 , G03C5/00 , G09F9/30 , H01L21/00 , H01L21/336 , H01L29/786
CPC分类号： G02F1/1368 , G02F1/1339
摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode and a pair of redundant electrodes on the first and the second portions of the lower conductive film, respectively, the redundant electrodes exposing a part of the second portion of the lower conductive film; removing the exposed part of the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法，包括：在基板上形成栅极线; 在栅极线上依次沉积栅极绝缘层和半导体层; 在半导体层上沉积下导电膜和上导电膜; 对上导电膜，下导电膜和半导体层进行光蚀刻; 沉积钝化层; 对所述钝化层进行光蚀刻以暴露所述上导电膜的第一和第二部分; 去除上导电膜的第一和第二部分以暴露下导电膜的第一和第二部分; 在下导电膜的第一和第二部分上形成像素电极和一对冗余电极，所述冗余电极暴露下导电膜的第二部分的一部分; 去除下导电膜的第二部分的暴露部分以暴露半导体层的一部分; 以及在半导体层的暴露部分上形成柱状间隔物。

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