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    • 31. 发明授权
    • Methods of processing substrates, electrostatic carriers for retaining substrates for processing, and assemblies comprising electrostatic carriers having substrates electrostatically bonded thereto
    • 处理基板的方法,用于保持用于处理的基板的静电载体,以及包括静电载体的组件,所述静电载体具有静电键合的基板
    • US07989022B2
    • 2011-08-02
    • US11780628
    • 2007-07-20
    • Dewali RayWarren M. FarnworthKyle K. Kirby
    • Dewali RayWarren M. FarnworthKyle K. Kirby
    • C23C16/00
    • H01L21/6833
    • A method of processing a substrate includes physically contacting an exposed conductive electrode of an electrostatic carrier with a conductor to electrostatically bond a substrate to the electrostatic carrier. The conductor is removed from physically contacting the exposed conductive electrode. Dielectric material is applied over the conductive electrode. The substrate is treated while it is electrostatically bonded to the electrostatic carrier. In one embodiment, a conductor is forced through dielectric material that is received over a conductive electrode of an electrostatic carrier to physically contact the conductor with the conductive electrode to electrostatically bond a substrate to the electrostatic carrier. After removing the conductor from the dielectric material, the substrate is treated while it is electrostatically bonded to the electrostatic carrier. Electrostatic carriers for retaining substrates for processing, and such assemblies, are also disclosed.
    • 处理衬底的方法包括使静电载体的暴露的导电电极与导体物理接触,以将衬底静电结合到静电载体上。 导体从物理接触暴露的导电电极去除。 电介质材料施加在导电电极上。 在静电接触静电载体的同时对衬底进行处理。 在一个实施例中,将导体强制通过介电材料,其被接收在静电载体的导电电极上,以与导电电极物理接触导体,以使基板静电地接合到静电载体上。 在从电介质材料中去除导体之后,将衬底静电结合到静电载体上进行处理。 还公开了用于保持用于加工的基材和这种组件的静电载体。
    • 39. 发明授权
    • Semiconductor wafers including one or more reinforcement structures and methods of forming the same
    • 包括一个或多个增强结构的半导体晶片及其形成方法
    • US07332413B2
    • 2008-02-19
    • US11516095
    • 2006-09-05
    • Kyle K. Kirby
    • Kyle K. Kirby
    • H01L21/30
    • H01L29/0657H01L21/02002H01L21/02035H01L21/304H01L21/78Y10S438/977
    • Methods of forming semiconductor devices include thinning a region of a semiconductor wafer and forming at least one semiconductor die laterally within a thinned region of the wafer. One or more reinforcement structures may be defined on the wafer. Semiconductor wafers include one or more reinforcement structures that extend laterally along the wafer and project from at least one surface of the wafer. The wafers further include a plurality of at least partially formed semiconductor dice laterally within at least one region having a thickness that is less than a thickness of the reinforcement structures. The wafers may include a plurality of at least partially formed semiconductor dice laterally within each of a plurality of thin regions defined between a plurality of reinforcement structures. The thin regions may have an average thickness less than an average thickness of the reinforcement structures.
    • 形成半导体器件的方法包括使半导体晶片的区域变薄并且在晶片的薄化区域内横向形成至少一个半导体晶片。 可以在晶片上限定一个或多个加强结构。 半导体晶片包括沿着晶片横向延伸并从晶片的至少一个表面突出的一个或多个加强结构。 晶片进一步包括多个至少部分形成的半导体晶片,其至少一个区域内具有小于加强结构厚度的厚度。 晶片可以在多个加强结构之间限定的多个薄区域的每一个内横向包括多个至少部分形成的半导体晶片。 薄区域可以具有小于加强结构的平均厚度的平均厚度。