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    • 34. 发明授权
    • Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate
    • 在多晶/非晶衬底上的单晶,高载流子迁移率硅薄膜附近
    • US07608335B2
    • 2009-10-27
    • US11001461
    • 2004-11-30
    • Alp T. FindikogluQuanxi JiaPaul N. ArendtVladimir MatiasWoong Choi
    • Alp T. FindikogluQuanxi JiaPaul N. ArendtVladimir MatiasWoong Choi
    • B32B9/00B32B9/04B32B13/04
    • C30B29/06C30B25/18H01L21/0237H01L21/0242H01L21/02488H01L21/02505H01L21/02521H01L21/02532H01L21/02587H01L21/02658
    • A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.
    • 一种模板制品,包括基底,其包括:(i)选自多晶基底和非晶基底的基材,和(ii)在所述基材表面上的至少一层不同材料; 以及在所述基底基板上的缓冲材料层,所述缓冲材料层的特征在于:(a)与所述基底基板的化学反应性低,(b)在低真空条件下在至少约800℃的温度下的稳定性;以及 (c)适于随后沉积半导体材料的晶格结构; 与包括基底基板的半导体产品一起提供,所述半导体产品包括:(i)选自多晶基底和非晶基底的基材,和(ii)在基底表面上的至少一层不同材料 材料; 以及在所述基底基板上的缓冲材料层,所述缓冲材料层的特征在于:(a)与所述基底基板的化学反应性低,(b)在低真空条件下在至少约800℃的温度下的稳定性,以及 (c)适于随后沉积半导体材料的晶格结构结构,以及半导体材料的顶层在缓冲材料层上。
    • 36. 发明申请
    • Light emitting display
    • 发光显示
    • US20060001620A1
    • 2006-01-05
    • US11158099
    • 2005-06-22
    • Woong Choi
    • Woong Choi
    • G09G3/30
    • G09G3/3233G09G2300/0465G09G2300/0819G09G2300/0842G09G2300/0852G09G2300/0861G09G2310/0251G09G2320/043G09G2330/06
    • A light emitting display including a plurality of scan lines; a plurality of data lines crossing the scan lines; a plurality of pixels defined by the scan lines and the data lines; and a light emitting device formed on a pixel and comprising a first electrode and a second electrode. A pixel connected to an nth data line includes a switching transistor that turns on in response to a selection signal supplied from a scan line; a storage capacitor to store a voltage corresponding to a data signal supplied from the nth data line when the switching transistor is turned on; and a driving transistor to supply a current corresponding to the voltage stored in the storage capacitor to the first electrode. The storage capacitor is formed between the first electrode and an (n+1)th data line.
    • 一种发光显示器,包括多条扫描线; 跨越扫描线的多条数据线; 由扫描线和数据线限定的多个像素; 以及形成在像素上并包括第一电极和第二电极的发光器件。 连接到第n条数据线的像素包括响应于从扫描线提供的选择信号而导通的开关晶体管; 存储电容器,用于在开关晶体管导通时存储与从第n条数据线提供的数据信号相对应的电压; 以及驱动晶体管,用于将与存储在该存储电容器中的电压相对应的电流提供给第一电极。 存储电容器形成在第一电极和第(n + 1)个第数据线之间。