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31. 发明授权

US06809382B2 EL display device having a pixel portion and a driver circuit 有权
标题翻译： EL显示装置具有像素部分和驱动电路
公开(公告)号：US06809382B2
公开(公告)日：2004-10-26
申请号：US10633754
申请日：2003-08-04
申请人： Ritsuko Kawasaki , Hidehito Kitakado , Kenji Kasahara , Shunpei Yamazaki
发明人： Ritsuko Kawasaki , Hidehito Kitakado , Kenji Kasahara , Shunpei Yamazaki
IPC分类号： H01L2701
CPC分类号： H01L27/1214 , G02F1/13454 , H01L27/3244 , H01L29/66765 , H01L29/78621 , H01L29/78627 , H01L29/78633 , H01L29/78636 , H01L29/78645
摘要： To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.
摘要翻译：通过根据各个电路的功能优化设置在半导体器件的电路中的底栅型或倒置交错型TFT的结构来提高半导体器件的操作特性和可靠性。至少与栅电极重叠的LDD区域形成在驱动电路的N沟道型TFT中，并且在像素矩阵电路的N沟道型TFT中形成与栅电极不重叠的LDD区域。两种LDD区域的浓度彼此不同，从而获得最佳电路操作。

32. 发明授权

US06624013B2 Method for manufacturing a semiconductor device 有权
公开(公告)号：US06624013B2
公开(公告)日：2003-09-23
申请号：US10124489
申请日：2002-04-18
申请人： Ritsuko Kawasaki , Kenji Kasahara , Shunpei Yamazaki
发明人： Ritsuko Kawasaki , Kenji Kasahara , Shunpei Yamazaki
IPC分类号： H01L2100
CPC分类号： H01L27/12 , H01L27/1281 , H01L27/1285
摘要： The invention relates to a method for manufacturing a semiconductor device, and it is an object of the invention to form a semiconductor area formed in island-like patterns as a single crystal or an area which can be regarded as a single crystal, and to simultaneously achieve a laminated structure by which various characteristics of TFTs can be stabilized, wherein an insulation film is formed on a glass substrate, and island-like semiconductor layer is formed thereon. A laser beam passed through a cylindrical lens is made into a linear laser beam and irradiated onto the island-like semiconductor layer by an optical system. The island-like semiconductor layer is subjected to two components, one of which is a direct laser beam component passing through the cylindrical lens and being irradiated directly onto the island-like semiconductor layer, and the other of which is a diffused laser beam component transmitting an insulation film and a substrate, being reflected by a reflection plate, and again transmitting the substrate and insulation film and being irradiated onto the island-like semiconductor laser.

33. 发明授权

US06362507B1 Electro-optical devices in which pixel section and the driver circuit are disposed over the same substrate 有权
标题翻译：像素部分和驱动电路设置在同一基板上的电光装置
公开(公告)号：US06362507B1
公开(公告)日：2002-03-26
申请号：US09550828
申请日：2000-04-18
申请人： Hiroyuki Ogawa , Kazuhide Tomiyasu , Ritsuko Kawasaki , Hidehito Kitakado , Kenji Kasahara , Shunpei Yamazaki
发明人： Hiroyuki Ogawa , Kazuhide Tomiyasu , Ritsuko Kawasaki , Hidehito Kitakado , Kenji Kasahara , Shunpei Yamazaki
IPC分类号： H01L2703
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/1214 , H01L27/1255 , H01L2029/7863
摘要： An object of the present invention is to improve the reliability and the operation performance of a semiconductor device comprising a driver circuit and a pixel pixel section by optimizing the TFT structure disposed in each circuit in accordance with the function of the circuit. The optimized circuit operation can be obtained by providing a LDD region that overlaps with at least the gate electrode in the driver circuit n-channel TFT, and a LDD region in the pixel section n-channel TFT in which the impurity concentration of the both LDD regions are differed.
摘要翻译：本发明的目的是通过根据电路的功能优化设置在每个电路中的TFT结构来提高包括驱动电路和像素像素部分的半导体器件的可靠性和操作性能。可以通过提供与驱动电路n沟道TFT中的至少栅电极重叠的LDD区域和像素区间n沟道TFT中的两个LDD的杂质浓度的LDD区域来获得优化的电路操作地区不同。

34. 发明授权

US06281552B1 Thin film transistors having ldd regions 有权
标题翻译：具有ldd区域的薄膜晶体管
公开(公告)号：US06281552B1
公开(公告)日：2001-08-28
申请号：US09532690
申请日：2000-03-22
申请人： Ritsuko Kawasaki , Hidehito Kitakado , Kenji Kasahara , Shunpei Yamazaki
发明人： Ritsuko Kawasaki , Hidehito Kitakado , Kenji Kasahara , Shunpei Yamazaki
IPC分类号： H01L2904
CPC分类号： H01L27/1214 , G02F1/13454 , H01L27/3244 , H01L29/66765 , H01L29/78621 , H01L29/78627 , H01L29/78633 , H01L29/78636 , H01L29/78645
摘要： To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.
摘要翻译：通过根据各个电路的功能优化设置在半导体器件的电路中的底栅型或倒置交错型TFT的结构来提高半导体器件的操作特性和可靠性。至少与栅电极重叠的LDD区域形成在驱动电路的N沟道型TFT中，并且在像素矩阵电路的N沟道型TFT中形成与栅电极不重叠的LDD区域。两种LDD区域的浓度彼此不同，从而获得最佳电路操作。

35. 发明授权

US06246070B1 Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same 有权
公开(公告)号：US06246070B1
公开(公告)日：2001-06-12
申请号：US09378152
申请日：1999-08-20
申请人： Shunpei Yamazaki , Setsuo Nakajima , Ritsuko Kawasaki
发明人： Shunpei Yamazaki , Setsuo Nakajima , Ritsuko Kawasaki
IPC分类号： H01L2972
CPC分类号： H01L27/1274 , G02F1/13454 , G02F1/136227 , H01L27/1214 , H01L27/1296 , H01L29/66765 , H01L29/78621 , H01L29/78627 , H01L29/78678
摘要： This invention improves TFT characteristics by making an interface between an active layer, especially a region forming a channel formation region and an insulating film excellent, and provides a semiconductor device provided with a semiconductor circuit made of a semiconductor element having uniform characteristics and a method of fabricating the same. In order to achieve the object, a gate wiring line is formed on a substrate or an under film, a gate insulating film, an initial semiconductor film, and an insulating film are formed into a laminate without exposing them to the atmosphere, and after the initial semiconductor film is crystallized by irradiation of infrared light or ultraviolet light (laser light) through the insulating film, patterning is carried out to obtain an active layer and a protection film each having a desired shape, and then, a resist mask is used to fabricate the semiconductor device provided with an LDD structure.

36. 发明授权

US08802185B2 Deposition method and method for manufacturing light-emitting device 有权
标题翻译：沉积方法和制造发光器件的方法
公开(公告)号：US08802185B2
公开(公告)日：2014-08-12
申请号：US12472562
申请日：2009-05-27
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hisao Ikeda , Satoshi Seo
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hisao Ikeda , Satoshi Seo
IPC分类号： B05D5/12
CPC分类号： H01L51/0005 , H01L27/3211 , H01L51/56
摘要： An object is to provide a deposition method for smoothly obtaining desired pattern shapes of material layers and a method for manufacturing a light-emitting device while throughput is improved when a plurality of different material layers is stacked on a substrate. A material layer is selectively formed in advance in a position overlapped with a light absorption layer over a first substrate by pump feeding. Three kinds of light-emitting layers are deposited on one deposition substrate. This first substrate and a second substrate that is to be a deposition target substrate are arranged to face each other, and the light absorption layer is heated by being irradiated with light, whereby a film is deposited on the second substrate. Three kinds of light-emitting layers can be deposited with positional accuracy by performing only one position alignment before light irradiation.
摘要翻译：本发明的目的是提供一种用于平滑地获得材料层的期望图案形状的沉积方法，以及当多个不同的材料层堆叠在基底上时，提高生产能力的方法。预先在与第一基板上的光吸收层重叠的位置通过泵送来选择性地形成材料层。在一个沉积衬底上沉积三种发光层。该第一基板和作为沉积靶基板的第二基板被布置为彼此面对，并且通过照射光来加热光吸收层，由此在第二基板上沉积膜。可以通过在光照射之前仅进行一个位置对准来以位置精度沉积三种发光层。

37. 发明申请

US20120153333A1 Light-Emitting Device and Lighting Device 有权
标题翻译：发光装置和照明装置
公开(公告)号：US20120153333A1
公开(公告)日：2012-06-21
申请号：US13327047
申请日：2011-12-15
申请人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki , Hisao Ikeda , Kengo Akimoto
发明人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki , Hisao Ikeda , Kengo Akimoto
IPC分类号： H01L33/58 , H01L33/36
CPC分类号： H01L51/5246 , H01L51/50 , H01L51/5212 , H01L51/5237 , H01L51/524 , H01L51/525 , H01L51/5253 , H01L51/5256 , H01L51/5259 , H01L51/5275 , H01L2251/50 , H01L2251/53 , H01L2251/5307 , H01L2251/5323 , H01L2251/5338 , H01L2251/5361
摘要： A highly reliable light-emitting device which includes an organic EL element and is lightweight is provided. The light-emitting device includes a first organic resin layer; a first glass layer over the first organic resin layer; a light-emitting element over the first glass layer; a second glass layer over the light-emitting element; and a second organic resin layer over the second glass layer. The first organic resin layer and the first glass layer each have a property of transmitting visible light. The thickness of the first glass layer and the thickness of the second glass layer are independently greater than or equal to 25 μ and less than or equal to 100 μ. The light-emitting element includes a first electrode having a property of transmitting visible light, a layer containing a light-emitting organic compound, and a second electrode stacked in this order from the first glass layer side.
摘要翻译：提供了包括有机EL元件并且重量轻的高度可靠的发光装置。发光装置包括第一有机树脂层; 第一有机树脂层上的第一玻璃层; 在第一玻璃层上的发光元件; 在所述发光元件上方的第二玻璃层; 和在第二玻璃层上的第二有机树脂层。第一有机树脂层和第一玻璃层各具有透射可见光的性质。第一玻璃层的厚度和第二玻璃层的厚度独立地大于或等于25μ并且小于或等于100μ。发光元件包括具有透射可见光的特性的第一电极，含有发光有机化合物的层和从第一玻璃层侧依次层叠的第二电极。

38. 发明申请

US20120126277A1 Light-Emitting Element, Manufacturing Method Thereof, and Lighting Device 有权
标题翻译：发光元件，其制造方法和照明装置
公开(公告)号：US20120126277A1
公开(公告)日：2012-05-24
申请号：US13303590
申请日：2011-11-23
申请人： Koichiro Tanaka , Hisao Ikeda , Shunpei Yamazaki
发明人： Koichiro Tanaka , Hisao Ikeda , Shunpei Yamazaki
IPC分类号： H01L33/02 , H01L33/40
CPC分类号： H01L51/50 , H01L2251/5361 , H01L2251/5392 , H01L2251/568
摘要： A light-emitting element includes a conductive layer functioning as a first electrode, an electroluminescent layer, and a conductive layer functioning as a second electrode, and further includes an insulating material filling a defect portion in the electroluminescent layer so that the defect portion is sealed. In the light-emitting element, the conductive layer functioning as a second electrode overlaps with the conductive layer functioning as a first electrode with the electroluminescent layer and the insulating material interposed therebetween and is in contact with a top surface of the electroluminescent layer.
摘要翻译：发光元件包括用作第一电极的导电层，电致发光层和用作第二电极的导电层，并且还包括填充电致发光层中的缺陷部分以使缺陷部分被密封的绝缘材料。在发光元件中，用作第二电极的导电层与用作第一电极的导电层重叠，其中电致发光层和绝缘材料介于其间并且与电致发光层的顶表面接触。

39. 发明授权

US08093593B2 Semiconductor device having multichannel transistor 有权
标题翻译：具有多通道晶体管的半导体器件
公开(公告)号：US08093593B2
公开(公告)日：2012-01-10
申请号：US11516616
申请日：2006-09-07
申请人： Chiho Kokubo , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
发明人： Chiho Kokubo , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
IPC分类号： H01L29/10
CPC分类号： H01L29/78675 , H01L27/1214 , H01L27/1222 , H01L27/127 , H01L27/1285 , H01L29/04 , H01L29/66757
摘要： A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.
摘要翻译：首先形成在其一侧具有多个尖锐的凸顶部的半导体区域的第一形状，并且使用连续波激光束进行来自上述区域的辐射，以使半导体区域的第一形状结晶化。在一条或多条线路中聚光的连续波激光束用于激光束。蚀刻半导体区域的第一形状以形成其中形成沟道形成区域和源极和漏极区域的半导体区域的第二形状。半导体区域的第二形状被设置成在从多个凸起端部延伸的各个晶体区域上形成沟道形成范围。消除了与沟道形成区域相邻的半导体区域。

40. 发明授权

US08044372B2 Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment 有权
标题翻译：激光装置，激光照射方法，半导体制造方法，半导体装置和电子设备
公开(公告)号：US08044372B2
公开(公告)日：2011-10-25
申请号：US11812557
申请日：2007-06-20
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Mai Akiba
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Mai Akiba
IPC分类号： G21G1/00
CPC分类号： H01L21/02683 , B23K26/0823 , B23K2101/40 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L27/3244 , Y10S438/973
摘要： Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for moving the center of the rotation along a straight line; and an optical system for processing laser light that is outputted from the laser oscillator to irradiate with the laser light a certain region within the moving range of the process object. The laser apparatus is characterized in that the certain region is on a line extended from the straight line and that the position at which the certain region overlaps the process object is moved by rotating the process object while moving the center of the rotation along the straight line.
摘要翻译：提供了具有增强的处理效率的连续波激光装置以及使用该激光装置的半导体装置的制造方法。激光装置具有：激光振荡器; 用于旋转过程对象的单元; 沿着直线移动旋转中心的单元; 以及用于处理从激光振荡器输出的激光的光学系统，用于将激光照射到处理对象的移动范围内的特定区域。所述激光装置的特征在于，所述特定区域处于从所述直线延伸的线上，并且所述特定区域与所述加工对象重叠的位置通过使所述加工对象旋转而沿着所述直线移动所述旋转中心而被移动。

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