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31. 发明授权

US5885903A Process for selectively etching silicon nitride in the presence of silicon oxide 失效
公开(公告)号：US5885903A
公开(公告)日：1999-03-23
申请号：US787205
申请日：1997-01-22
申请人： Kevin J. Torek , Whonchee Lee
发明人： Kevin J. Torek , Whonchee Lee
IPC分类号： H01L21/311 , H01L21/302
CPC分类号： H01L21/31111
摘要： An improved wet etchant process is provided which has greater selectivity than existing hot phosphoric acid etching processes and which maintains a high etch rate in use. The etchant composition includes a second acid having a boiling point higher than that of the phosphoric acid.

32. 发明申请

US20140030863A1 METHODS OF FORMING CAPACITORS 有权
标题翻译：形成电容器的方法
公开(公告)号：US20140030863A1
公开(公告)日：2014-01-30
申请号：US13559073
申请日：2012-07-26
申请人： Gurpreet Lugani , Kevin J. Torek
发明人： Gurpreet Lugani , Kevin J. Torek
IPC分类号： H01L21/02
CPC分类号： H01L27/10852 , H01G4/005 , H01G4/008 , H01G4/06 , H01L21/3065 , H01L21/31116 , H01L21/32137 , H01L27/10894 , H01L28/40 , H01L28/60 , H01L28/75 , H01L28/91
摘要： A method of forming capacitors includes providing first capacitor electrodes within support material. The first capacitor electrodes contain TiN and the support material contains polysilicon. The polysilicon-containing support material is dry isotropically etched selectively relative to the TiN-containing first capacitor electrodes using a sulfur and fluorine-containing etching chemistry. A capacitor dielectric is formed over sidewalls of the first capacitor electrodes and a second capacitor electrode is formed over the capacitor dielectric. Additional methods are disclosed.
摘要翻译：形成电容器的方法包括在支撑材料内提供第一电容器电极。第一电容器电极含有TiN，载体材料含有多晶硅。使用含硫和含氟蚀刻化学法，相对于含TiN的第一电容器电极，选择性地对含多晶硅的支撑材料进行干式各向异性蚀刻。在第一电容器电极的侧壁上形成电容器电介质，并且在电容器电介质上形成第二电容器电极。公开了另外的方法。

33. 发明申请

US20130017494A1 Photoresist Processing Methods 有权
标题翻译：光刻胶加工方法
公开(公告)号：US20130017494A1
公开(公告)日：2013-01-17
申请号：US13622574
申请日：2012-09-19
申请人： Kevin J. Torek , Todd R. Abbott , Sandra Tagg , Amy Weatherly
发明人： Kevin J. Torek , Todd R. Abbott , Sandra Tagg , Amy Weatherly
IPC分类号： G03F7/20
CPC分类号： H01L21/32139 , G03F7/16 , G03F7/322 , H01L21/0271
摘要： A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.
摘要翻译：光致抗蚀剂处理方法包括用含硫物质处理基材。将正色调光致抗蚀剂施加在经处理的基底上并与其接触。该方法包括将光致抗蚀剂的一部分选择性地暴露于光化能量并显影光致抗蚀剂以去除暴露部分并在基底上形成光刻胶图案。与含有硫物质的处理相比，与不进行处理的剩余光致抗蚀剂相比，减少了用于去除的残留光致抗蚀剂的量。

34. 发明授权

US08283112B2 Photoresist processing methods 有权
标题翻译：光刻胶加工方法
公开(公告)号：US08283112B2
公开(公告)日：2012-10-09
申请号：US13163515
申请日：2011-06-17
申请人： Kevin J. Torek , Todd R. Abbott , Sandra Tagg , Amy Weatherly
发明人： Kevin J. Torek , Todd R. Abbott , Sandra Tagg , Amy Weatherly
IPC分类号： G03F7/26 , G03F7/38
CPC分类号： H01L21/32139 , G03F7/16 , G03F7/322 , H01L21/0271
摘要： A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.
摘要翻译：光致抗蚀剂处理方法包括用含硫物质处理基材。将正色调光致抗蚀剂施加在经处理的基底上并与其接触。该方法包括将光致抗蚀剂的一部分选择性地暴露于光化能量并显影光致抗蚀剂以去除暴露部分并在基底上形成光刻胶图案。与含有硫物质的处理相比，与不进行处理的剩余光致抗蚀剂相比，减少了用于去除的残留光致抗蚀剂的量。

35. 发明授权

US07977251B2 High selectivity BPSG to TEOS etchant 有权
标题翻译：高选择性BPSG至TEOS蚀刻剂
公开(公告)号：US07977251B2
公开(公告)日：2011-07-12
申请号：US12113825
申请日：2008-05-01
申请人： Whonchee Lee , Kevin J. Torek
发明人： Whonchee Lee , Kevin J. Torek
IPC分类号： H01L21/302
CPC分类号： C03C15/00 , H01L21/31111
摘要： Methods of selectively etching BPSG over TEOS are disclosed. In one embodiment, a TEOS layer may be used to prevent contamination of other components in a semiconductor device by the boron and phosphorous in a layer of BPSG deposited over the TEOS layer. An etchant of the present invention may be used to etch desired areas in the BPSG layer, wherein the high selectivity for BPSG to TEOS of etchant would result in the TEOS layer acting as an etch stop. A second etchant may be utilized to etch the TEOS layer. The second etchant may be less aggressive and, thus, not damage the components underlying the TEOS layer.
摘要翻译：公开了通过TEOS选择性蚀刻BPSG的方法。在一个实施例中，可以使用TEOS层来防止在沉积在TEOS层上的BPSG层中的硼和磷污染半导体器件中的其它部件。本发明的蚀刻剂可以用于蚀刻BPSG层中的所需区域，其中对于蚀刻剂的BPSG至TEOS的高选择性将导致TEOS层用作蚀刻停止层。可以使用第二蚀刻剂来蚀刻TEOS层。第二种蚀刻剂可能较不具有侵蚀性，因此不会损害TEOS层下面的组分。

36. 发明授权

US07977037B2 Photoresist processing methods 有权
标题翻译：光刻胶加工方法
公开(公告)号：US07977037B2
公开(公告)日：2011-07-12
申请号：US11510010
申请日：2006-08-24
申请人： Kevin J. Torek , Todd R. Abbott , Sandra L. Tagg , Amy Weatherly
发明人： Kevin J. Torek , Todd R. Abbott , Sandra L. Tagg , Amy Weatherly
IPC分类号： G03F7/26 , G03F7/38
CPC分类号： H01L21/32139 , G03F7/16 , G03F7/322 , H01L21/0271
摘要： A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.
摘要翻译：光致抗蚀剂处理方法包括用含硫物质处理基材。将正色调光致抗蚀剂施加在经处理的基底上并与其接触。该方法包括将光致抗蚀剂的一部分选择性地暴露于光化能量并显影光致抗蚀剂以去除暴露部分并在基底上形成光刻胶图案。与含有硫物质的处理相比，与不进行处理的剩余光致抗蚀剂相比，减少了用于去除的残留光致抗蚀剂的量。

37. 发明申请

US20080233759A1 HIGH SELECTIVITY BPSG TO TEOS ETCHANT 有权
标题翻译：高选择性BPSG到TEOS ETCHANT
公开(公告)号：US20080233759A1
公开(公告)日：2008-09-25
申请号：US12113825
申请日：2008-05-01
申请人： Whonchee Lee , Kevin J. Torek
发明人： Whonchee Lee , Kevin J. Torek
IPC分类号： H01L21/302
CPC分类号： C03C15/00 , H01L21/31111
摘要： Methods of selectively etching BPSG over TEOS are disclosed. In one embodiment, a TEOS layer may be used to prevent contamination of other components in a semiconductor device by the boron and phosphorous in a layer of BPSG deposited over the TEOS layer. An etchant of the present invention may be used to etch desired areas in the BPSG layer, wherein the high selectivity for BPSG to TEOS of etchant would result in the TEOS layer acting as an etch stop. A second etchant may be utilized to etch the TEOS layer. The second etchant may be less aggressive and, thus, not damage the components underlying the TEOS layer.
摘要翻译：公开了通过TEOS选择性蚀刻BPSG的方法。在一个实施例中，可以使用TEOS层来防止在沉积在TEOS层上的BPSG层中的硼和磷污染半导体器件中的其它部件。本发明的蚀刻剂可以用于蚀刻BPSG层中的所需区域，其中对于蚀刻剂的BPSG至TEOS的高选择性将导致TEOS层用作蚀刻停止层。可以使用第二蚀刻剂来蚀刻TEOS层。第二种蚀刻剂可能较不具有侵蚀性，因此不会损害TEOS层下面的组分。

38. 发明授权

US07378353B2 High selectivity BPSG to TEOS etchant 失效
标题翻译：高选择性BPSG至TEOS蚀刻剂
公开(公告)号：US07378353B2
公开(公告)日：2008-05-27
申请号：US11321111
申请日：2005-12-29
申请人： Whonchee Lee , Kevin J. Torek
发明人： Whonchee Lee , Kevin J. Torek
IPC分类号： H01I21/302
CPC分类号： C03C15/00 , H01L21/31111
摘要： An organic acid/fluoride-containing solution etchant having high selectivity for BPSG to TEOS. In an exemplary situation, a TEOS layer may be used to prevent contamination of other components in a semiconductor device by the boron and phosphorous in a layer of BPSG deposited over the TEOS layer. The etchant of the present invention may be used to etch desired areas in the BPSG layer, wherein the high selectivity for BPSG to TEOS of etchant would result in the TEOS layer acting as an etch stop. A second etch with a known etchant may be utilized to etch the TEOS layer. The known etchant for the second etch can be less aggressive and, thus, not damage the components underlying the TEOS layer.
摘要翻译：具有对BOSG对TEOS具有高选择性的有机含酸/氟化物溶液蚀刻剂。在示例性情况下，可以使用TEOS层来防止在沉积在TEOS层上的BPSG层中的硼和磷对半导体器件中的其它部件的污染。本发明的蚀刻剂可用于蚀刻BPSG层中的所需区域，其中对于蚀刻剂的BPSG至TEOS的高选择性将导致TEOS层用作蚀刻停止层。可以使用具有已知蚀刻剂的第二蚀刻来蚀刻TEOS层。用于第二蚀刻的已知蚀刻剂可以较不具有侵蚀性，因此不会损坏TEOS层下面的部件。

39. 发明授权

US07354863B2 Methods of selectively removing silicon 有权
标题翻译：选择性去除硅的方法
公开(公告)号：US07354863B2
公开(公告)日：2008-04-08
申请号：US10804366
申请日：2004-03-19
申请人： Kyle K. Kirby , Kevin J. Torek
发明人： Kyle K. Kirby , Kevin J. Torek
IPC分类号： H01L21/311
CPC分类号： H01L21/30608
摘要： An etch solution that comprises tetramethylammonium hydroxide (“TMAH”) and at least one organic solvent. The etch solution may be substantially free of water. The etch solution is formulated to selectively etch a silicon layer relative to other layers on an integrated circuit. The TMAH may be present in an amount ranging from approximately 1% by weight to approximately 10% by weight. The at least one organic solvent may be selected from the group consisting of isopropanol, butanol, hexanol, phenol, glycol, glycerol, ethylene glycol, propylene glycol, glycerin, and mixtures thereof. A method of selectively etching a silicon layer and a method of removing a heat-affected zone (“HAZ”) on an integrated circuit are also disclosed.
摘要翻译：包含四甲基氢氧化铵（“TMAH”）和至少一种有机溶剂的蚀刻溶液。蚀刻溶液可以基本上不含水。蚀刻溶液被配制为相对于集成电路上的其它层选择性地蚀刻硅层。 TMAH可以以约1重量％至约10重量％的量存在。所述至少一种有机溶剂可选自异丙醇，丁醇，己醇，苯酚，乙二醇，甘油，乙二醇，丙二醇，甘油及其混合物。还公开了一种选择性蚀刻硅层的方法和在集成电路上去除热影响区（“HAZ”）的方法。

40. 发明授权

US07030034B2 Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum 有权
标题翻译：相对于铝的氧化物基本上选择性地蚀刻氮化硅的方法
公开(公告)号：US07030034B2
公开(公告)日：2006-04-18
申请号：US10664738
申请日：2003-09-18
申请人： Janos Fucsko , Grady S. Waldo , Kevin J. Torek , Li Li
发明人： Janos Fucsko , Grady S. Waldo , Kevin J. Torek , Li Li
IPC分类号： H01L21/302
CPC分类号： H01L21/31111 , C09K13/08 , H01L21/76224
摘要： A method of etching silicon nitride substantially selectively relative to an oxide of aluminum includes providing a substrate comprising silicon nitride and an oxide of aluminum. The silicon nitride and the oxide is exposed to an etching solution comprising HF and an organic HF solvent under conditions effective to etch the silicon nitride substantially selectively relative to the oxide. Other aspects and implementations are contemplated.
摘要翻译：相对于铝的氧化物基本上选择性地蚀刻氮化硅的方法包括提供包括氮化硅和铝的氧化物的衬底。在有效地相对于氧化物基本上选择性地蚀刻氮化硅的条件下，氮化硅和氧化物暴露于包含HF和有机HF溶剂的蚀刻溶液。考虑了其他方面和实现。

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