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31. 发明授权

US4794608A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4794608A
公开(公告)日：1988-12-27
申请号：US708848
申请日：1985-03-05
申请人： Toshihiro Fujita , Jun Ohya , Kenichi Matsuda , Hiroyuki Serizawa
发明人： Toshihiro Fujita , Jun Ohya , Kenichi Matsuda , Hiroyuki Serizawa
IPC分类号： H01S5/00 , H01S5/026 , H01S5/06 , H01S5/062 , H01S5/0625 , H01S5/065 , H01S5/10 , H01S5/125 , H01S5/14 , H01S3/19
CPC分类号： H01S5/0014 , H01S5/1021 , H01S5/026 , H01S5/0265 , H01S5/06 , H01S5/06213 , H01S5/06255 , H01S5/06258 , H01S5/065 , H01S5/0655 , H01S5/1025 , H01S5/125 , H01S5/14 , H01S5/142
摘要： A semiconductor laser device of a new monolithic structure has a long transparent optical waveguide used as a passive cavity directly coupled with an active cavity possessing a gain in the direction of the optical axis of the active cavity on a compound semiconductor substrate. The device is intended to satisfy all four characteristics, which are;(1) stable single longitudinal mode oscillation;(2) narrow spectral linewidth;(3) suppression of wavelength chirping due to current modulation; and(4) low noiseand to be applied as a light source for optical fiber communication, optical information processing or the like.
摘要翻译：新的单片结构的半导体激光器件具有用作无源腔的长透明光波导，其与在化合物半导体衬底上的有源腔的光轴方向上具有增益的有源腔直接耦合。该装置旨在满足所有四个特征，即（1）稳定的单纵模振荡; （2）窄光谱线宽; （3）由于电流调制抑制波长啁啾; 和（4）低噪声，并被用作光纤通信，光学信息处理等的光源。

32. 发明授权

US4597856A Process for fluidized catalytic cracking of heavy oils and production of hydrogen 失效
标题翻译：重油流化催化裂化和氢气生产工艺
公开(公告)号：US4597856A
公开(公告)日：1986-07-01
申请号：US661750
申请日：1984-10-17
申请人： Susumu Yoshioka , Nobuo Matsuo , Nobuyasu Meguri , Tadashi Murakami , Yasushi Ishibashi , Kenichi Matsuda , Teruo Suzuka , Satoshi Fukase , Hidetaka Ohse
发明人： Susumu Yoshioka , Nobuo Matsuo , Nobuyasu Meguri , Tadashi Murakami , Yasushi Ishibashi , Kenichi Matsuda , Teruo Suzuka , Satoshi Fukase , Hidetaka Ohse
IPC分类号： C10G11/20 , C01B3/10 , C01B3/30 , C01B3/40 , C01B3/44 , C10G47/02
CPC分类号： C01B3/44 , C01B3/40 , Y02E60/36 , Y02P20/52
摘要： A process for fluidized catalytic cracking of heavy oils and production of hydrogen is described, comprising contacting steam and heavy oils with fluidized catalyst particles containing reduced iron at high temperatures, wherein a fluidized bed is formed such that the catalyst particles are fed from the bottom and withdrawn from the top of the fluidized bed and the fluidized bed is provided with a means for retarding the mixing rate of the catalyst particles in the vertical direction, to thereby generate a temperature difference between zones of the fluidized bed above and below said means, and use the upper zone for cracking of heavy oils and the lower zone for production of hydrogen. Catalyst particles withdrawn from the fluidized bed may be regenerated and recycled. Thus, light oils and hydrogen can be produced in high yields.
摘要翻译：描述了重油的流化催化裂化和氢气生产的方法，包括使蒸汽和重油与高温下含有还原铁的流化催化剂颗粒接触，其中形成流化床，使得催化剂颗粒从底部进料，从流化床顶部排出并且流化床设置有用于延迟催化剂颗粒在垂直方向上的混合速率的装置，从而在所述装置上方和下方产生流化床的区域之间的温差，以及使用上部区域用于重油的裂化和用于生产氢的下部区域。从流化床排出的催化剂颗粒可以被再生和再循环。因此，可以高产率生产轻油和氢。

33. 发明授权

US07560684B2 On-vehicle imaging device 有权
标题翻译：车载成像装置
公开(公告)号：US07560684B2
公开(公告)日：2009-07-14
申请号：US11795791
申请日：2006-03-07
申请人： Kenichi Matsuda , Yuuichi Inaba , Shinji Yoshida , Takumi Yamaguchi
发明人： Kenichi Matsuda , Yuuichi Inaba , Shinji Yoshida , Takumi Yamaguchi
IPC分类号： H01J40/14 , H01J5/16 , G01J3/50
CPC分类号： H01L27/14621 , B60R1/00 , B60R2300/10 , B60R2300/105 , B60R2300/8033 , B60R2300/8093 , H01L31/02165 , H04N9/07
摘要： A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two λ/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The λ/4 multilayer films and spacer layer are composed of inorganic materials.
摘要翻译：安装在汽车中并执行彩色成像的车载成像装置已经设置有多个二维排列的像素单元。在每个像素中，滤色器通过多层干涉滤光器分离入射光。多层干涉滤光片由两个λ/ 4多层膜和夹在其间的间隔层组成。多层干涉滤光器透过与间隔层的光学厚度对应的波长范围的光。 λ/ 4多层膜和间隔层由无机材料组成。

34. 发明申请

US20080135740A1 On-Vehicle Imaging Device 有权
标题翻译：车载成像装置
公开(公告)号：US20080135740A1
公开(公告)日：2008-06-12
申请号：US11795791
申请日：2006-03-07
申请人： Kenichi Matsuda , Inaba Yuuichi , Shinji Yoshida , Takumi Yamaguchi
发明人： Kenichi Matsuda , Inaba Yuuichi , Shinji Yoshida , Takumi Yamaguchi
IPC分类号： B60R1/10 , G01J3/50
CPC分类号： H01L27/14621 , B60R1/00 , B60R2300/10 , B60R2300/105 , B60R2300/8033 , B60R2300/8093 , H01L31/02165 , H04N9/07
摘要： A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two λ/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The λ/4 multilayer films and spacer layer are composed of inorganic materials.
摘要翻译：安装在汽车中并执行彩色成像的车载成像装置已经设置有多个二维排列的像素单元。在每个像素中，滤色器通过多层干涉滤光器分离入射光。多层干涉滤光片由两个λ/ 4多层膜和夹在其间的间隔层组成。多层干涉滤光器透过与间隔层的光学厚度对应的波长范围的光。 λ/ 4多层膜和间隔层由无机材料组成。

35. 发明授权

US06627516B2 Method of fabricating a light receiving device 失效
标题翻译：光接收装置的制造方法
公开(公告)号：US06627516B2
公开(公告)日：2003-09-30
申请号：US10121997
申请日：2002-04-12
申请人： Kenichi Matsuda
发明人： Kenichi Matsuda
IPC分类号： H01L3300
CPC分类号： H01L31/1105 , H01L31/02162 , H01L31/02165 , H01L31/105 , H01L31/1892 , Y02E10/50
摘要： A light receiving device includes a semiconductor substrate, a light absorbing layer provided on the semiconductor substrate, a window layer provided on the light absorbing layer, a wavelength filter provided on the window layer, and a diffusion region provided in the wavelength filter and the window layer. A forbidden bandwidth of the wavelength filter is smaller than a forbidden bandwidth of the window layer, and a forbidden bandwidth of the light absorbing layer is smaller than the forbidden bandwidth of the wavelength filter.
摘要翻译：光接收装置包括半导体衬底，设置在半导体衬底上的光吸收层，设置在光吸收层上的窗口层，设置在窗口层上的波长滤光器，以及设置在该波长滤光器和窗口中的扩散区域层。波长滤波器的禁带宽度小于窗口层的禁止带宽，并且光吸收层的禁止带宽小于波长滤波器的禁止带宽。

36. 发明授权

US06423561B1 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06423561B1
公开(公告)日：2002-07-23
申请号：US09640280
申请日：2000-08-16
申请人： Toyoji Chino , Takayuki Yoshida , Kenichi Matsuda
发明人： Toyoji Chino , Takayuki Yoshida , Kenichi Matsuda
IPC分类号： H01L2100
CPC分类号： H01L21/6835 , H01L21/563 , H01L24/29 , H01L24/81 , H01L2221/68359 , H01L2224/13111 , H01L2224/13144 , H01L2224/16225 , H01L2224/29111 , H01L2224/2919 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83192 , H01L2224/9202 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01033 , H01L2924/01042 , H01L2924/01049 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/10329 , H01L2924/10336 , H01L2924/12042 , H01L2924/12043 , H01L2924/1305 , H01L2924/1306 , H01L2924/13064 , H01L2924/13091 , H01L2924/157 , H01S5/0207 , H01S5/0217 , H01S5/0224 , H01S5/02248 , H01S5/02272 , H01S5/026 , H01S5/0261 , H01S5/028 , H01S5/0425 , H01S5/0683 , H01S5/18305 , H01S5/1838 , H01S5/18388 , H01S5/423 , H01S2301/176 , H01L2924/01007 , H01L2924/01022 , H01L2924/00 , H01L2924/00014
摘要： A method for fabricating a semiconductor device, in which a semiconductor chip having a first surface and a second surface substantially parallel to each other is mounted on a submount such that the first surface faces the submount, includes: a first step of applying resin to at least one of the semiconductor chip and the submount; a second step of applying a pressure to the semiconductor chip and the submount so that the semiconductor chip and the submount are bonded to each other by the resin, resulting in electrical connection therebetween; and a third step of performing at least one of a film formation process, an etching process, a patterning process, and a washing process for the second surface of the semiconductor chip.
摘要翻译：一种制造半导体器件的方法，其中具有第一表面和第二表面彼此大致平行的半导体芯片安装在基座上，使得第一表面面向基座，包括：第一步骤，将树脂施加到半导体芯片和底座中的至少一个; 向半导体芯片和基座施加压力使得半导体芯片和副基座被树脂彼此接合的第二步骤，导致其间的电连接; 以及对半导体芯片的第二表面进行成膜处理，蚀刻处理，图案化处理和清洗处理中的至少一个的第三步骤。

37. 发明授权

US5408105A Optoelectronic semiconductor device with mesa 失效
标题翻译：光电半导体器件与台面
公开(公告)号：US5408105A
公开(公告)日：1995-04-18
申请号：US19223
申请日：1993-02-18
申请人： Hideo Adachi , Kenichi Matsuda
发明人： Hideo Adachi , Kenichi Matsuda
IPC分类号： H01S5/026 , H01S5/183 , H01S5/42 , H01L33/00
CPC分类号： H01S5/423 , H01S5/0261 , H01S5/0262 , H01S5/18305 , H01S5/18341
摘要： There are disclosed a low driving voltage surface emitting semiconductor laser and an optoelectronic integrated which comprises a two-dimensional array of such surface emitting semiconductor lasers which are modulatable with input signals of small voltage amplitudes. In an embodiment of the present invention, an optical semiconductor device includes a GaAs substrate 105, and an epitaxial growth layer structure on the GaAs substrate, the epitaxial growth layer structure including in the named order a p type GaAs/AlAs multilayer semiconductor mirror layer 104, an active layer 103 and an n type GaAs/AlAs multilayer semiconductor mirror layer 102. The epitaxial growth layer structure is etched to the depth of the active layer in forming a mesa, while the p type mirror layer remains unetched throughout a top surface of the semiconductor substrate.
摘要翻译：公开了低驱动电压表面发射半导体激光器和光电集成，其包括这样的表面发射半导体激光器的二维阵列，其可以用小的电压幅度的输入信号进行调制。在本发明的一个实施例中，光学半导体器件包括GaAs衬底105和GaAs衬底上的外延生长层结构，外延生长层结构包括按照命名顺序ap型GaAs / AlAs多层半导体镜层104，有源层103和n型GaAs / AlAs多层半导体镜层102.外延生长层结构在形成台面时蚀刻到有源层的深度，而p型反射镜层在整个顶表面保持未蚀刻半导体衬底。

38. 发明授权

US5393994A Optical semiconductor device for neural network 失效
标题翻译：用于神经网络的光学半导体器件
公开(公告)号：US5393994A
公开(公告)日：1995-02-28
申请号：US192552
申请日：1994-02-07
申请人： Yasuhiro Kobayashi , Kenichi Matsuda
发明人： Yasuhiro Kobayashi , Kenichi Matsuda
IPC分类号： G06N3/067 , H01L27/15 , H01L31/12 , H01S5/026 , H01S5/40
CPC分类号： H01L31/125 , G06N3/0675 , H01L27/15 , H01S5/026 , H01S5/0261 , H01S5/0262 , H01S5/4031
摘要： An optical semiconductor device is disclosed which includes a semiconductor laser having at least an active layer, reflecting means formed on the semiconductor laser for reflecting internal feedback light generated from the semiconductor laser and at least two phototransistors formed on the reflecting means for detecting light having a wavelength substantially identical to that of laser light oscillated from the active layer.
摘要翻译：公开了一种光半导体器件，其包括具有至少有源层的半导体激光器，形成在半导体激光器上的反射装置，用于反射从半导体激光器产生的内部反馈光，以及形成在反射装置上的至少两个光电晶体管，用于检测具有波长基本上与从有源层振荡的激光的波长相同。

39. 发明授权

US4899360A Semiconductor laser device having monolithically formed active and passive cavities on the same substrate 失效
标题翻译：半导体激光器件在同一衬底上具有单片形式的有源和无源腔
公开(公告)号：US4899360A
公开(公告)日：1990-02-06
申请号：US276763
申请日：1988-11-08
申请人： Toshihiro Fujita , Jun Ohya , Kenichi Matsuda , Hiroyuki Serizawa
发明人： Toshihiro Fujita , Jun Ohya , Kenichi Matsuda , Hiroyuki Serizawa
IPC分类号： H01S5/026 , H01S5/06 , H01S5/062 , H01S5/0625 , H01S5/065 , H01S5/10 , H01S5/125 , H01S5/14
CPC分类号： H01S5/1021 , H01S5/026 , H01S5/0265 , H01S5/06 , H01S5/06213 , H01S5/06255 , H01S5/06258 , H01S5/065 , H01S5/0655 , H01S5/1025 , H01S5/125 , H01S5/14 , H01S5/142
摘要： A semiconductor laser device of a new monolithic structure has a long transparent optical waveguide used as a passive cavity directly coupled with an active cavity possessing a gain in the direction of the optical axis of the active cavity on a compound semiconductor substrate. The device is intended to satisfy all of four characteristics, which are;(1) stable single longitudinal mode oscillation;(2) narrow spectral linewidth;(3) suppression of wavelength chirping due to current modulation; and(4) low noiseand to be applied as a light source for optical fiber communication, optical information processing or the like.
摘要翻译：新的单片结构的半导体激光器件具有用作无源腔的长透明光波导，其与在化合物半导体衬底上的有源腔的光轴方向上具有增益的有源腔直接耦合。该装置旨在满足四个特征，即（1）稳定的单纵模振荡; （2）窄光谱线宽; （3）由于电流调制抑制波长啁啾; 和（4）低噪声，并被用作光纤通信，光学信息处理等的光源。

40. 发明授权

US4643813A Process for producing alkanesulfonic acids 失效
标题翻译：烷基磺酸的制备方法
公开(公告)号：US4643813A
公开(公告)日：1987-02-17
申请号：US775295
申请日：1985-09-12
申请人： Yasukazu Sato , Kenichi Matsuda , Hiromi Ozaki , Teruo Suzuka , Mamoru Yamane
发明人： Yasukazu Sato , Kenichi Matsuda , Hiromi Ozaki , Teruo Suzuka , Mamoru Yamane
IPC分类号： C07C303/14 , C07C309/04 , C07C3/24
CPC分类号： C07C303/14
摘要： A process for producing an alkanesulfonic acid is described, which comprises causing sulfur dioxide and oxygen to act on a saturated hydrocarbon under illumination with light in a substantially water-free reaction system, wherein photo-sulfoxidation of the saturated hydrocarbon is performed as a reaction mixture in the reaction system is held in contact with sodium sulfite.
摘要翻译：描述了一种制备链烷磺酸的方法，其包括在基本上无水的反应体系中用光照射下使二氧化硫和氧作用在饱和烃上，其中饱和烃的光 - 亚砜氧化作为反应混合物在反应体系中与亚硫酸钠接触。

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