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31. 发明申请

US20140070890A1 POWER AMPLIFIER 有权
标题翻译：功率放大器
公开(公告)号：US20140070890A1
公开(公告)日：2014-03-13
申请号：US13832999
申请日：2013-03-15
申请人： Kazuhiro Iyomasa , Takayuki Matsuzuka
发明人： Kazuhiro Iyomasa , Takayuki Matsuzuka
IPC分类号： H03F3/21
CPC分类号： H03F3/21 , H03F1/0261 , H03F3/245 , H03F3/60 , H03F2200/18 , H03F2200/411
摘要： A power amplifier includes: an amplification element amplifying an input signal; and a bias circuit supplying a bias current to an input of the amplification element. The bias circuit includes a reference voltage terminal to which a battery voltage is applied from a battery, a first resistor having a first end connected to the reference voltage terminal, a second resistor connected between a second end of the first resistor and ground, and a first transistor. The first transistor has a control terminal connected to a connection point between the first resistor and the second resistor, a first terminal connected to a power supply, and a second terminal connected to the input of the amplification element. The first and second resistors are the same material.
摘要翻译：功率放大器包括：放大输入信号的放大元件; 以及向放大元件的输入端提供偏置电流的偏置电路。偏置电路包括从电池施加电池电压的参考电压端子，具有连接到参考电压端子的第一端的第一电阻器，连接在第一电阻器的第二端和地之间的第二电阻器和第一晶体管。第一晶体管具有连接到第一电阻器和第二电阻器之间的连接点的控制端子，连接到电源的第一端子和连接到放大元件的输入端的第二端子。第一和第二电阻是相同的材料。

32. 发明授权

US07342453B2 Cascode circuit 有权
标题翻译：串联电路
公开(公告)号：US07342453B2
公开(公告)日：2008-03-11
申请号：US11446201
申请日：2006-06-05
申请人： Hirotaka Amasuga , Takayuki Matsuzuka , Akira Inoue
发明人： Hirotaka Amasuga , Takayuki Matsuzuka , Akira Inoue
IPC分类号： H03F3/16 , H03F1/22
CPC分类号： H03F1/223 , H01L27/0222 , H01L27/0629 , H03F3/195 , H03F2200/451 , H03F2200/75
摘要： A cascode circuit in which two field effect transistors (“FET”) are connected in cascode has a first FET having its source grounded, a second FET having its source connected to the drain of the first FET, and a Schottky barrier diode having an anode connected to the source of the first FET and a cathode connected to the gate of the second FET.
摘要翻译：其中两个场效应晶体管（“FET”）以共源共栅连接的共源共栅电路具有其源极接地的第一FET，其源极连接到第一FET的漏极的第二FET和具有阳极的肖特基势垒二极管连接到第一FET的源极和连接到第二FET的栅极的阴极。

33. 发明授权

US07088194B2 Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US07088194B2
公开(公告)日：2006-08-08
申请号：US10762338
申请日：2004-01-23
申请人： Takayuki Matsuzuka
发明人： Takayuki Matsuzuka
IPC分类号： H03B5/18
CPC分类号： H03B5/1852
摘要： In an oscillator, a FET, an output matching circuit having a diode, an LC series resonant circuit having a capacitor and an inductor, a transmission line, and a source inductor are arranged on one surface of a substrate consisting of a semiconductor material. The source of the FET is grounded through a source inductor. The drain of the FET is connected to the anode of the diode of the output matching circuit through a transmission line. The FET amplifies a high-frequency signal input to the gate, and outputs the high-frequency signal from the drain to an output matching circuit. The diode regulates an oscillation power.
摘要翻译：在振荡器中，在由半导体材料构成的基板的一个表面上，配置FET，具有二极管的输出匹配电路，具有电容器的LC串联谐振电路和电感器，传输线和源电感器。 FET的源极通过源极电感接地。 FET的漏极通过传输线连接到输出匹配电路的二极管的阳极。 FET放大输入到栅极的高频信号，并将高频信号从漏极输出到输出匹配电路。二极管调节振荡功率。

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