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31. 发明授权

US07354746B1 Method for producing optically active IHOG and monatin 失效
标题翻译：用于制备光学活性的IHOG和莫纳甜的方法
公开(公告)号：US07354746B1
公开(公告)日：2008-04-08
申请号：US11609018
申请日：2006-12-11
申请人： Shunichi Suzuki , Seiichi Hara , Toshiki Taba , Yasuaki Takakura
发明人： Shunichi Suzuki , Seiichi Hara , Toshiki Taba , Yasuaki Takakura
IPC分类号： C12P7/42 , C12P21/08 , C12N9/10 , C07H21/04
CPC分类号： C12P17/10 , C12N9/88
摘要： The present invention relates to a method for producing optically active IHOG, which can in turn be used for the production of monatin. The present invention further relates to a method for producing optically active monatin, and an aldolase which can be used in these methods. As such, the present invention enables the synthesis of 4-(Indole-3-ylmethyl)-4-hydroxy-2-oxoglutaric acid with high optical purity, which is useful as an intermediate in the synthesis of optically active monatin, from indole pyruvic acid and pyruvic acid (or oxaloacetic acid).
摘要翻译：本发明涉及一种用于制备光学活性的IHOG的方法，其可以用于制备莫纳甜。本发明还涉及可用于这些方法的光学活性莫纳甜的制备方法和醛缩酶。因此，本发明能够合成具有高光学纯度的4-（吲哚-3-基甲基）-4-羟基-2-氧代戊二酸，其可用作在光学活性莫纳甜的合成中的吲哚丙酮酸的中间体酸和丙酮酸（或草酰乙酸）。

32. 发明申请

US20060138448A1 Compound semiconductor and compound semiconductor device using the same 有权
标题翻译：化合物半导体和使用其的化合物半导体器件
公开(公告)号：US20060138448A1
公开(公告)日：2006-06-29
申请号：US11298490
申请日：2005-12-12
申请人： Jun Komiyama , Yoshihisa Abe , Shunichi Suzuki , Hideo Nakanishi
发明人： Jun Komiyama , Yoshihisa Abe , Shunichi Suzuki , Hideo Nakanishi
IPC分类号： H01L33/00
CPC分类号： H01L29/452 , H01L21/02381 , H01L21/02433 , H01L21/02447 , H01L21/02458 , H01L21/02461 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L29/045 , H01L29/1608 , H01L29/2003 , H01L29/267 , H01L33/007
摘要： A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2 μm, a carrier concentration of 1016-1021/cm3, a hexagonal InwGaxAl1-w-xN single crystal buffer layer 4 (0≦w
摘要翻译：背面电极6形成在化合物半导体的Si单晶衬底2的背面，其中厚度为0.05-2μm的n型3C-SiC单晶缓冲层3，载流子浓度为10 ^{16×10 21 / cm 3，六方晶系Al x 厚度为0.01-0.5μm的1-wx N单晶缓冲层4（0 <= w <1,0 <= x <1，w + x <1）和n型六方晶系在Al 3 O 3中，单晶层5（0 <= y <1,0 3 <！ - SIPO - >，并且在六方晶系AlGaN / N单晶层5，以提供化合物导致很少的能量损失并且允许高效率和高的击穿电压的半导体器件。}

33. 发明申请

US20060011941A1 Substrate for growing electro-optical single crystal thin film and method of manufacturing the same 失效
标题翻译：用于生长电光单晶薄膜的基板及其制造方法
公开(公告)号：US20060011941A1
公开(公告)日：2006-01-19
申请号：US11174610
申请日：2005-07-06
申请人： Yoshihisa Abe , Shunichi Suzuki , Hideo Nakanishi , Jun Komiyama
发明人： Yoshihisa Abe , Shunichi Suzuki , Hideo Nakanishi , Jun Komiyama
IPC分类号： H01L31/109
CPC分类号： G02F1/03
摘要： A substrate 1 for growing an electro-optical single crystal thin film in which two or more layers of buffer layers 3, 4, and 5 for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate 2 is provided as a substrate for growing an electro-optical single crystal thin film which can obtain an electro-optical single crystal thin film of BTO single crystal thin film 6 etc. with a large size and a very high quality.
摘要翻译：在Si（001）基板2上形成用于生长用于缓冲Si和BTO之间的晶格失配的两层或多层缓冲层3,4和5的电光单晶薄膜的衬底1，作为用于生长可以获得具有大尺寸和非常高质量的BTO单晶薄膜6等的电光单晶薄膜的电光单晶薄膜的基板。

34. 发明授权

US06924131B2 Xylitol dehydrogenase of acetic acid bacteria and gene thereof 失效
标题翻译：乙酸细菌的木糖醇脱氢酶及其基因
公开(公告)号：US06924131B2
公开(公告)日：2005-08-02
申请号：US10307385
申请日：2002-12-02
申请人： Masakazu Sugiyama , Naoto Tonouchi , Shunichi Suzuki , Kenzo Yokozeki
发明人： Masakazu Sugiyama , Naoto Tonouchi , Shunichi Suzuki , Kenzo Yokozeki
IPC分类号： C12N9/02 , C12N1/21 , C12N9/04 , C12N15/53 , C12P7/18 , C07H21/04 , C12N1/20 , C12N15/00 , C12Q1/68
CPC分类号： C12N9/0006 , C12P7/18
摘要： Xylitol is produced by allowing xylitol dehydrogenase or cells instoduced with a DNA coding for xylitol dehydrogenase, which is a protein of the following (A) or (B) to act on D-xylulose, and collecting produced xylitol: (A) a protein which has the amino acid sequence of SEQ ID NO: 4; (B) a protein which has the amino acid sequence of SEQ ID NO: 4 including substitution, deletion, insertion, addition, or inversion of one or several amino acids, and has xylitol dehydrogenase activity.
摘要翻译：通过使木糖醇脱氢酶或用编码木糖醇脱氢酶的DNA（其是以下（A）或（B）的蛋白质）作用于D-木酮糖并收集产生的木糖醇的DNA产生木糖醇：（A）具有SEQ ID NO：4的氨基酸序列; （B）具有SEQ ID NO：4的氨基酸序列的蛋白质，包括一个或几个氨基酸的取代，缺失，插入，添加或倒置，并具有木糖醇脱氢酶活性。

35. 发明授权

US06472182B1 Process for producing transglutaminase by microorganism 失效
标题翻译：通过微生物生产转谷氨酰胺酶的方法
公开(公告)号：US06472182B1
公开(公告)日：2002-10-29
申请号：US08952959
申请日：1997-12-04
申请人： Katsunori Kobayashi , Shigeru Yamanaka , Yuko Tanita , Naoko Tsuyoshi , Ryosuke Fudo , Junko Shinozaki , Kenzo Yokozeki , Shunichi Suzuki
发明人： Katsunori Kobayashi , Shigeru Yamanaka , Yuko Tanita , Naoko Tsuyoshi , Ryosuke Fudo , Junko Shinozaki , Kenzo Yokozeki , Shunichi Suzuki
IPC分类号： C12P2104
CPC分类号： C12N9/1044 , C12Q1/16 , C12Y203/02013
摘要： The present invention provides a process for producing a transglutaminase, which comprises culturing microorganisms of any of the genus Micrococcus, Clostridium, Torulopsis, Rhizopus and Monascus in a medium to produce the intended transglutaminase in the medium or in the cells of the microorganisms and then isolating the transglutaminase, and a process for producing a gelled proten with the thus-obtained transglutaminase. According to the process of the present invention, transglutaminase can be rapidly produced at a low cost.
摘要翻译：本发明提供一种转谷氨酰胺酶的制造方法，其包括在培养基中培养微球菌属，梭菌属，梭菌属，根霉属和红曲霉属中的任一种的微生物，以在培养基中或微生物细胞中产生预期的转谷氨酰胺酶，然后分离转谷氨酰胺酶，以及由此获得的转谷氨酰胺酶制备凝胶化的保护膜的方法。根据本发明的方法，可以低成本快速生产转谷氨酰胺酶。

36. 发明授权

US06340582B1 Process for preparing xylitol 失效
标题翻译：制备木糖醇的方法
公开(公告)号：US06340582B1
公开(公告)日：2002-01-22
申请号：US09509543
申请日：2000-04-11
申请人： Shunichi Suzuki , Masakazu Sugiyama , Maiko Mori , Yasuhiro Mihara , Kenzo Yokozeki
发明人： Shunichi Suzuki , Masakazu Sugiyama , Maiko Mori , Yasuhiro Mihara , Kenzo Yokozeki
IPC分类号： C12P718
CPC分类号： C12P7/18 , Y10S435/822 , Y10S435/823
摘要： A method for producing xylitol by allowing a microorganism belonging to the Gluconobacter oxydans or Acetobacter xylinum and having a D-arabitol dehydrogenase activity and a D-xylulose reductase (xylitol dehydrogenase) activity and an ability to convert D-arabitol to xylitol is acted on D-arabitol in a reaction mixture containing a carbon source to produce xylitol.
摘要翻译：通过使属于氧化葡糖杆菌或木醋杆菌的具有D-阿拉伯糖脱氢酶活性和D-木酮糖还原酶（木糖醇脱氢酶）活性和将D-阿拉伯糖醇转化为木糖醇的能力的微生物生产木糖醇的方法作用于D - 阿糖醇在含有碳源的反应混合物中以产生木糖醇。

37. 发明授权

US06320724B1 Floppy disk drive unit with contact preventing mechanism 失效
标题翻译：带接触防止机构的软盘驱动单元
公开(公告)号：US06320724B1
公开(公告)日：2001-11-20
申请号：US09321722
申请日：1999-05-28
申请人： Shunichi Suzuki
发明人： Shunichi Suzuki
IPC分类号： G11B1704
CPC分类号： G11B17/0434 , G11B5/40
摘要： To provide a floppy disk drive unit in which a magnetic head is prevented from being broken. This floppy disk drive unit 1 includes an upper magnetic head 10a and a lower magnetic head 10b which have the respective sliding faces opposite to each other, a cassette support 4 for supporting a floppy disk 3 opposite to the magnetic heads 10a, 10b, and a contact preventing element 19 for preventing breakage of the magnetic head 10b. The contact preventing element 19 has a first stopper part 19b for inhibiting the downward movement of the cassette support 4 to prevent its contact with the magnetic head. By this arrangement, even if impact is applied from the outside to the floppy disk drive unit so that the cassette support 4 is bent and descended, the cassette support 4 is supported from below by the first stopper part 19b so as to prevent the magnetic head 10b from being damaged.
摘要翻译：提供防止磁头破损的软盘驱动单元。该软盘驱动单元1包括具有彼此相对的相应滑动面的上磁头10a和下磁头10b，用于支撑与磁头10a，10b相对的软盘3的磁带盒支架4和接触防止元件19，用于防止磁头10b的破坏。接触防止元件19具有用于抑制盒支撑件4的向下移动以防止其与磁头接触的第一止动部19b。通过这种布置，即使从外部向软盘驱动单元施加冲击，使得盒支撑件4弯曲和下降，盒支撑件4由第一止动部分19b从下方支撑，以防止磁头 10b被损坏。

38. 发明授权

US08785942B2 Nitride semiconductor substrate and method of manufacturing the same 有权
标题翻译：氮化物半导体衬底及其制造方法
公开(公告)号：US08785942B2
公开(公告)日：2014-07-22
申请号：US13352987
申请日：2012-01-18
申请人： Akira Yoshida , Jun Komiyama , Yoshihisa Abe , Hiroshi Oishi , Kenichi Eriguchi , Shunichi Suzuki
发明人： Akira Yoshida , Jun Komiyama , Yoshihisa Abe , Hiroshi Oishi , Kenichi Eriguchi , Shunichi Suzuki
IPC分类号： H01L29/15
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/7787
摘要： A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse.In a nitride semiconductor substrate 10 having a substrate 1, a buffer layer 2 formed on one principal plane of the substrate 1, an intermediate layer 3 formed on the buffer layer 2, an electron transport layer 4 formed on the intermediate layer 3, and an electron supply layer 5 formed on the electron transport layer 4, the intermediate layer 3 has a thickness of 200 nm to 1500 nm and a carbon concentration of 5×1016 atoms/cm3 to 1×1018 atoms/cm3 and is of AlxGa1-xN (0.05≦x≦0.24), and the electron transport layer 4 has a thickness of 5 nm to 200 nm and is of AlyGa1-yN (0≦y≦0.04).
摘要翻译：提供了适用于常关型高击穿电压装置的氮化物半导体衬底和制造衬底的方法，其允许更高的阈值电压和电流崩溃的改善。在具有衬底1的氮化物半导体衬底10中，形成在衬底1的一个主平面上的缓冲层2，形成在缓冲层2上的中间层3，形成在中间层3上的电子传输层4和形成在电子输送层4上的电子供给层5，中间层3的厚度为200nm〜1500nm，碳浓度为5×1016原子/ cm3〜1×1018原子/ cm3，为AlxGa1-xN（ 0.05＆nlE; x＆lt; L; 0.24），电子传输层4的厚度为5nm〜200nm，为Al y Ga 1-y N（0＆nl E; y＆nlE; 0.04）。

39. 发明授权

US08681925B2 Nuclear power plant, method of forming corrosion-resistant coating therefor, and method of operating nuclear power plant 有权
公开(公告)号：US08681925B2
公开(公告)日：2014-03-25
申请号：US13363010
申请日：2012-01-31
申请人： Masato Okamura , Tetsuo Oosato , Seiji Yamamoto , Tadasu Yotsuyanagi , Nagayoshi Ichikawa , Kenji Yamazaki , Junichi Takagi , Hidehiro Urata , Shunichi Suzuki , Kenro Takamori , Junichi Suzuki
发明人： Masato Okamura , Tetsuo Oosato , Seiji Yamamoto , Tadasu Yotsuyanagi , Nagayoshi Ichikawa , Kenji Yamazaki , Junichi Takagi , Hidehiro Urata , Shunichi Suzuki , Kenro Takamori , Junichi Suzuki
IPC分类号： G21C9/00
CPC分类号： G21C17/0225 , G21C13/08 , G21C17/022 , G21Y2002/103 , G21Y2004/10 , Y02E30/40
摘要： In a nuclear power plant, a corrosion-resistant oxide film on a surface of the metal component of a reactor structure is exposed to a high-temperature water, the corrosion-resistant oxide film containing an oxide having a property of a P-type semiconductor, and a catalytic substance having a property of an N-type semiconductor is deposited on the oxide film. The oxide film maintains the property of the P-type semiconductor.

40. 发明授权

US08320514B2 Nuclear power plant, method of forming corrosion-resistant coating therefor, and method of operating nuclear power plant 有权
标题翻译：核电厂，其耐腐蚀涂层成型方法，核电厂运行方法
公开(公告)号：US08320514B2
公开(公告)日：2012-11-27
申请号：US11296438
申请日：2005-12-08
申请人： Masato Okamura , Tetsuo Oosato , Seiji Yamamoto , Tadasu Yotsuyanagi , Nagayoshi Ichikawa , Kenji Yamazaki , Junichi Takagi , Hidehiro Urata , Shunichi Suzuki , Kenro Takamori , Junichi Suzuki
发明人： Masato Okamura , Tetsuo Oosato , Seiji Yamamoto , Tadasu Yotsuyanagi , Nagayoshi Ichikawa , Kenji Yamazaki , Junichi Takagi , Hidehiro Urata , Shunichi Suzuki , Kenro Takamori , Junichi Suzuki
IPC分类号： G21C9/00
CPC分类号： G21C17/0225 , G21C13/08 , G21C17/022 , G21Y2002/103 , G21Y2004/10 , Y02E30/40
摘要： In a nuclear power plant, a corrosion-resistant oxide film on a surface of the metal component of a reactor structure is exposed to a high-temperature water, the corrosion-resistant oxide film containing an oxide having a property of a P-type semiconductor, and a catalytic substance having a property of an N-type semiconductor is deposited on the oxide film. The oxide film maintains the property of the P-type semiconductor.
摘要翻译：在核电站中，将反应器结构体的金属成分表面的耐腐蚀氧化膜暴露于高温水中，含有具有P型半导体的性质的氧化物的耐腐蚀性氧化物膜，并且在氧化物膜上沉积具有N型半导体性质的催化物质。氧化膜保持P型半导体的性质。

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