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31. 发明授权

US5396082A Semiconductor substrate and device with a surface layer structure 失效
标题翻译：具有表面层结构的半导体衬底和器件
公开(公告)号：US5396082A
公开(公告)日：1995-03-07
申请号：US205771
申请日：1994-03-04
申请人： Yoshinori Wada , Kazumi Wada , Takahisa Ohno
发明人： Yoshinori Wada , Kazumi Wada , Takahisa Ohno
IPC分类号： H01L29/205 , H01L29/161
CPC分类号： H01L29/205
摘要： The semiconductor device has a semiconductor substrate composed essentially of a III-V compound semiconductor containing Ga and As, and a surface layer structure provided on the semiconductor substrate and this layer has a composition different from that of the semiconductor substrate. The surface layer structure includes a strained layer epitaxially grown on the surface of the semiconductor substrate and composed essentially of at least one-element selected from the group consisting of indium, gallium, aluminum and boron, and at least one element selected from the group consisting of arsenic and phosphorus. The strained layer has a composition different from that of the semiconductor substrate The strained layer has a valence band maximum lower in energy than that of the valence band maximum of the semiconductor substrate.
摘要翻译：半导体器件具有基本上由包含Ga和As的III-V族化合物半导体构成的半导体衬底以及设置在半导体衬底上的表面层结构，该层具有不同于半导体衬底的组成。表面层结构包括外延生长在半导体衬底的表面上并且基本上由选自铟，镓，铝和硼的至少一种元素组成的应变层，以及至少一种选自以下的元素：的砷和磷。应变层具有与半导体衬底的组成不同的组成。应变层具有与半导体衬底的价带最大值的能量最低的价带。

32. 发明授权

US08716836B2 Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device 失效
标题翻译：半导体晶片，半导体晶片制造方法和电子器件
公开(公告)号：US08716836B2
公开(公告)日：2014-05-06
申请号：US12811011
申请日：2008-12-26
申请人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata , Taketsugu Yamamoto , Kazumi Wada
发明人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata , Taketsugu Yamamoto , Kazumi Wada
IPC分类号： H01L21/331 , H01L29/737
CPC分类号： H01L21/8258 , H01L21/02381 , H01L21/0245 , H01L21/02546 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/8252 , H01L29/66318
摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects, and the annealing is repeated a plurality of times.
摘要翻译：实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。提供了包括Si晶片的半导体晶片; 所述抑制层形成在所述晶片上并且抑制晶体生长，所述抑制层包括覆盖所述晶片的一部分的覆盖区域和不覆盖所述覆盖区域内的所述晶片的一部分的开放区域; 在开放区域晶体生长的Ge层; 以及在Ge层上晶体生长的功能层。 Ge层可以通过使得能够移动晶体缺陷的温度和持续时间退火而形成，并且退火重复多次。

33. 发明申请

US20070286952A1 Method and Structure of Strain Control of Sige Based Photodetectors and Modulators 审中-公开
标题翻译：基于光电检测器和调制器的应变控制方法与结构
公开(公告)号：US20070286952A1
公开(公告)日：2007-12-13
申请号：US10566686
申请日：2004-07-29
申请人： Jifeng Liu , Douglas Cannon , Kazumi Wada , Samerkhae Jongthammanurak , David Danielson , Jurgen Michel , Lionel Kimerling
发明人： Jifeng Liu , Douglas Cannon , Kazumi Wada , Samerkhae Jongthammanurak , David Danielson , Jurgen Michel , Lionel Kimerling
IPC分类号： H01L21/20 , C30B25/18
CPC分类号： H01L31/1808 , C30B25/18 , C30B29/08 , H01L21/02381 , H01L21/02532 , H01L21/02656 , H01L31/028 , Y02E10/547
摘要： A SiGe or Ge structure comprises a substrate and a SiGe or Ge layer that is formed on a first surface of the substrate. A silicidation or germanide layer is formed on a second surface of the substrate so to increase the tensile strain of the SiGe or Ge layer on the first surface.
摘要翻译： SiGe或Ge结构包括衬底和形成在衬底的第一表面上的SiGe或Ge层。在基板的第二表面上形成硅化物或锗化物层，以增加第一表面上的SiGe或Ge层的拉伸应变。

34. 发明申请

US20060022226A1 Ge photodetectors 有权
标题翻译： Ge光电探测器
公开(公告)号：US20060022226A1
公开(公告)日：2006-02-02
申请号：US11191769
申请日：2005-07-28
申请人： Kazumi Wada , Lionel Kimerling
发明人： Kazumi Wada , Lionel Kimerling
IPC分类号： H01L27/148
CPC分类号： H01L31/028 , H01L31/0312 , H01L31/1055 , H01L31/109 , H01L31/1105 , Y02E10/547
摘要： A phototransistor includes an emitter and a base that comprises Ge. A collector comprises Si. The base, emitter, and collector form at least one Si/Ge heterojunction allowing the unpinning of Fermi energy level (EF) of the phototransistor.
摘要翻译：光电晶体管包括发射极和包含Ge的基极。收集器包括Si。基极，发射极和集电极形成至少一个Si / Ge异质结，允许去除光电晶体管的费米能级（E> F）。

35. 发明申请

US20050063061A1 Process for fabrication of high reflectors by reversal of layer sequence and application thereof 失效
标题翻译：通过反转层序列制造高反射体的方法及其应用
公开(公告)号：US20050063061A1
公开(公告)日：2005-03-24
申请号：US10917209
申请日：2004-08-12
申请人： Felix Grawert , Shoji Akiyama , Kazumi Wada , Franz Kaertner
发明人： Felix Grawert , Shoji Akiyama , Kazumi Wada , Franz Kaertner
IPC分类号： G02B5/08 , H01S3/098 , F21V9/04 , G02B5/20
CPC分类号： G02B5/0833
摘要： An optical reflector includes an optical reflective element that comprises alternating layers of high and low index layers. A new substrate is bonded on the optical reflective element. The sequence of layers in the reflective element is reversed in order such that the layers grown first with lowest surface roughness are exposed to the highest electric field strength, and the layer grown last, of highest roughness, are buried deep in the multilayer stack.
摘要翻译：光学反射器包括光反射元件，其包括高折射率层和低折射率层的交替层。新的衬底粘结在光学反射元件上。反射元件中的层序顺序颠倒，使得首先以最低表面粗糙度生长的层暴露于最高的电场强度，并且最后粗糙度最高的层被深埋在多层叠层中。

36. 发明申请

US20050013575A1 Multiple oxidation smoothing method for reducing silicon waveguide roughness 有权
标题翻译：减少硅波导粗糙度的多重氧化平滑法
公开(公告)号：US20050013575A1
公开(公告)日：2005-01-20
申请号：US10869636
申请日：2004-06-16
申请人： Daniel Sparacin , Kazumi Wada , Lionel Kimerling
发明人： Daniel Sparacin , Kazumi Wada , Lionel Kimerling
IPC分类号： G02B6/12 , G02B6/122 , G02B6/13 , G02B6/136 , G02B6/10
CPC分类号： G02B6/122 , G02B6/13 , G02B6/136 , G02B2006/12097
摘要： The light-guiding structure includes a waveguide structure that comprises a substrate and a low refractive index underclad material. The waveguide structure is oxidized to form an oxidized layer on a surface of the waveguide structure. The oxidized layer is isotropically etched after the reaction-limited oxidation regime is approaching the diffusion-limited regime and repeatedly oxidized and etched so that the waveguide structure is continuously oxidized in the reaction-limited regime, reducing the overall time of oxidation and volume of oxidized material so that the waveguide structure has its sidewall roughness reduced efficiently enabling high transmission rates of guided light.
摘要翻译：导光结构包括波导结构，其包括基底和低折射率底层材料。波导结构被氧化以在波导结构的表面上形成氧化层。在反应限制氧化态接近扩散限制状态后，氧化层进行各向同性蚀刻，并被反复氧化和蚀刻，使得波导结构在反应限制状态下连续氧化，减少氧化的总时间和氧化的体积材料，使得波导结构的侧壁粗糙度有效降低，导致导光的高透射率。

37. 发明申请

US20110012175A1 SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND ELECTRONIC DEVICE 审中-公开
标题翻译：半导体波导，半导体波长制造方法和电子器件
公开(公告)号：US20110012175A1
公开(公告)日：2011-01-20
申请号：US12811073
申请日：2008-12-26
申请人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata , Taketsugu Yamamoto , Kazumi Wada
发明人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata , Taketsugu Yamamoto , Kazumi Wada
IPC分类号： H01L29/73 , H01L29/12 , H01L21/20
CPC分类号： H01L21/8258 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02516 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L29/66242 , H01L29/66318 , H01L29/737 , H01L29/7786
摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; a Ge layer that is crystal-grown on the wafer and shaped as an isolated island; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be shaped as an island having a size that docs not exceed double a distance moved by crystal defects as a result of annealing the Ge layer at a certain temperature for a certain time. The Ge layer may be shaped as an island having a size for which stress due to a difference relative to a thermal expansion coefficient of Si, which is material of the wafer, does not cause crystal dejects when the Ge layer is annealed at a certain temperature.
摘要翻译：实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。提供了包括Si晶片的半导体晶片; 在晶片上晶体生长并形成隔离岛的Ge层; 以及在Ge层上晶体生长的功能层。 Ge层可以被成形为岛，其尺寸不超过由晶格缺陷移动的距离的两倍，这是由于Ge层在一定温度下退火一定时间的结果。 Ge层可以成形为岛，其具有如下尺寸：当Ge层在一定温度下退火时，由于与作为晶片的材料的Si的热膨胀系数的差异而产生的应力不会引起晶体磨损的尺寸。

38. 发明申请

US20100308376A1 SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND ELECTRONIC DEVICE 失效
标题翻译：半导体波导，半导体波长制造方法和电子器件
公开(公告)号：US20100308376A1
公开(公告)日：2010-12-09
申请号：US12811011
申请日：2008-12-26
申请人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata , Taketsugu Yamamoto , Kazumi Wada
发明人： Tomoyuki Takada , Sadanori Yamanaka , Masahiko Hata , Taketsugu Yamamoto , Kazumi Wada
IPC分类号： H01L29/12 , H01L21/20 , H01L21/322
CPC分类号： H01L21/8258 , H01L21/02381 , H01L21/0245 , H01L21/02546 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/8252 , H01L29/66318
摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects, and the annealing is repeated a plurality of times.
摘要翻译：实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。提供了包括Si晶片的半导体晶片; 所述抑制层形成在所述晶片上并且抑制晶体生长，所述抑制层包括覆盖所述晶片的一部分的覆盖区域和不覆盖所述覆盖区域内的所述晶片的一部分的开放区域; 在开放区域晶体生长的Ge层; 以及在Ge层上晶体生长的功能层。 Ge层可以通过使得能够移动晶体缺陷的温度和持续时间退火而形成，并且退火重复多次。

39. 发明授权

US07812423B2 Optical device comprising crystalline semiconductor layer and reflective element 有权
标题翻译：包括晶体半导体层和反射元件的光学器件
公开(公告)号：US07812423B2
公开(公告)日：2010-10-12
申请号：US10916869
申请日：2004-08-12
申请人： Felix Jan Grawert , Shoji Akiyama , Kazumi Wada , Franz X. Kaertner
发明人： Felix Jan Grawert , Shoji Akiyama , Kazumi Wada , Franz X. Kaertner
IPC分类号： H01L31/0232
CPC分类号： H01L33/10 , G02F1/3523 , G02F2001/213 , H01L33/12
摘要： An optical semiconductor includes a first semiconductor layer and at least one reflective element that is formed on the semiconductor layer. The at least one reflective element comprises alternating layers of high and low index layers. A crystalline semiconductor layer is formed on the at least one reflective element.
摘要翻译：光学半导体包括形成在半导体层上的第一半导体层和至少一个反射元件。所述至少一个反射元件包括高折射率层和低折射率层的交替层。在所述至少一个反射元件上形成晶体半导体层。

40. 发明授权

US07251402B2 Anti-reflection coating for the pass-band of photonic bandgap crystal 有权
公开(公告)号：US07251402B2
公开(公告)日：2007-07-31
申请号：US11210231
申请日：2005-08-23
申请人： Shoji Akiyama , Ivan Celanovic , Natalija Z. Jovanovic , Francis O'Sullivan , Kazumi Wada
发明人： Shoji Akiyama , Ivan Celanovic , Natalija Z. Jovanovic , Francis O'Sullivan , Kazumi Wada
IPC分类号： G02B6/10
CPC分类号： G02B1/115 , B82Y20/00 , G02B1/005
摘要： Light transmission is maximized through the pass band of a photonic bandgap (PBG) crystal (having alternating high- and low-index material) while preserving high reflection for stop band. An anti-reflective coating (ARC) is used to coat the PBG crystal wherein the ARC material has a refractive index of n=(nair×nhigh index material)1/2 and thickness around λc/8 where λc is center wavelength.

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