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31. 发明授权

US08116600B2 Optical phase modulation element and optical modulator using the same 有权
标题翻译：光相位调制元件和使用其的光调制器
公开(公告)号：US08116600B2
公开(公告)日：2012-02-14
申请号：US12526107
申请日：2007-12-25
申请人： Daisuke Okamoto , Masafumi Nakada , Junichi Fujikata
发明人： Daisuke Okamoto , Masafumi Nakada , Junichi Fujikata
IPC分类号： G02F1/01 , G02F1/035
CPC分类号： G02B6/1226 , B82Y20/00 , G02B6/12007 , G02F1/015 , G02F1/025 , G02F2202/20 , G02F2203/10 , G02F2203/50
摘要： Provided is a small-size optical phase modulation element and an optical modulator using it. The optical phase modulation element includes a Plasmon waveguide having a clad made of a metal material having a complex dielectric constant having a negative real part in the used wavelength and a core formed by a dielectric metal material having a complex dielectric constant having a positive real part in the used wavelength. The Plasmon waveguide is connected to an optical waveguide including a clad and a core both having a complex dielectric constant having a positive real part. The core of the Plasmon waveguide and the core of the optical waveguide are formed, at least partially, of the same semiconductor material. The Plasmon waveguide has a function to phase-modulate the incident light when voltage is applied.
摘要翻译：提供了一种小尺寸光相位调制元件和使用它的光调制器。光学相位调制元件包括具有由金属材料制成的包层的等离子体波导，所述金属材料具有在所使用的波长中具有负实部的复介电常数和由具有正实部的复介电常数的介电金属材料形成的芯在使用的波长。等离子体波导连接到包括具有正实部的复介电常数的包层和芯的光波导。至少部分地由相同的半导体材料形成等离子体波导的核心和光波导的核心。等离子体波导具有在施加电压时对入射光进行相位调制的功能。

32. 发明授权

US6083632A Magnetoresistive effect film and method of manufacture thereof 失效
标题翻译：磁阻效应膜及其制造方法
公开(公告)号：US6083632A
公开(公告)日：2000-07-04
申请号：US4066
申请日：1998-01-08
申请人： Junichi Fujikata , Masafumi Nakada
发明人： Junichi Fujikata , Masafumi Nakada
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/32 , H01L43/08 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/3268 , H01L43/08 , G11B2005/3996 , G11B5/3163 , G11B5/3932 , Y10S428/90 , Y10T428/1129 , Y10T428/12465 , Y10T428/12542 , Y10T428/1259 , Y10T428/12611 , Y10T428/12806 , Y10T428/12854 , Y10T428/12931
摘要： A magnetoresistive effect film is formed by laminating a plurality of magnetic thin films onto a substrate with an intervening non-magnetic thin film, an antiferromagnetic thin film being provided so as to neighbor to one of the ferromagnetic thin film via this intervening non-magnetic thin film. With the bias magnetic field applied to the antiferromagnetic thin film being Hr and the coercivity of the other ferromagnetic thin film being Hc.sub.2, the condition Hc.sub.2
摘要翻译：磁阻效应膜是通过将多个磁性薄膜层叠在具有中间非磁性薄膜的基板上而形成的，反铁磁性薄膜通过这种中间非磁性薄膜被设置成与铁磁薄膜中的一个相邻电影。由于反铁磁性薄膜的偏磁场为Hr，另一方的铁磁性薄膜的矫顽力为Hc2，满足条件Hc2

33. 发明授权

US06781800B2 Magnetoresistance effect film and device 失效
标题翻译：磁阻效应胶片及装置
公开(公告)号：US06781800B2
公开(公告)日：2004-08-24
申请号：US10409497
申请日：2003-04-08
申请人： Junichi Fujikata , Masafumi Nakada
发明人： Junichi Fujikata , Masafumi Nakada
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F41/302
摘要： A magnetic layer which is exchange-coupled to an antiferromagnetic layer and given an exchange bias therefrom is laminated via a non-magnetic layer on another magnetic layer to form an MR film. The antiferromagnetic layer (PtMn, PdMn or NiMn) is laminated on a ground layer (Zr, Hf, Zr—Hf, Zr—Co, Zr—Au, Ni—O, Co—O or Fe—O) so that the antiferromagnetic layer has a surface of an average roughness of 1-5 Å. A conduction layer is formed adjacent to the magnetic layer for sensing a magnetic field. The conduction layer is made of Cu, Ag, Au or an alloy composed of two selected therefrom. A layer made of Zr, Ta, Zr—O, Ta—O or a mixture thereof is laminated on the conduction layer. The MR film exhibits a large resistance variation linearly at near zero magnetic field with an excellent thermal stability.
摘要翻译：与反铁磁层交换耦合并给予交换偏压的磁性层通过非磁性层层叠在另一磁性层上以形成MR膜。将反铁磁层（PtMn，PdMn或NiMn）层叠在接地层（Zr，Hf，Zr-Hf，Zr-Co，Zr-Au，Ni-O，Co-O或Fe-O）上，具有平均粗糙度为1-5的表面。形成与磁性层相邻的感应磁场的导电层。导电层由Cu，Ag，Au或由其中选择的两者组成的合金制成。在导电层上层叠由Zr，Ta，Zr-O，Ta-O或其混合物制成的层。 MR膜在近零磁场下线性呈现出大的电阻变化，具有优异的热稳定性。

34. 发明授权

US06215631B1 Magnetoresistive effect film and manufacturing method therefor 失效
标题翻译：磁阻效应薄膜及其制造方法
公开(公告)号：US06215631B1
公开(公告)日：2001-04-10
申请号：US08947875
申请日：1997-10-09
申请人： Junichi Fujikata , Masafumi Nakada
发明人： Junichi Fujikata , Masafumi Nakada
IPC分类号： G11B5139
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01L43/08
摘要： A magnetoresistive effect film has a lamination of an antiferromagnetic thin film, a magnetic thin film that is in contact with the antiferromagnetic thin film, a non-magnetic thin film that is in contact with the magnetic film, and another magnetic thin film that is in contact with the non-magnetic thin film. With a bias magnetic field of Hr on the antiferromagnetic thin film and a coercivity Hc2 of the other magnetic thin film, the condition Hc2
摘要翻译：磁阻效应膜具有反铁磁性薄膜，与反铁磁性薄膜接触的磁性薄膜，与磁性膜接触的非磁性薄膜以及与磁性薄膜接触的另一种磁性薄膜与非磁性薄膜接触。在反铁磁薄膜上具有Hr的偏置磁场和另一磁性薄膜的矫顽力Hc2，满足条件Hc2

35. 发明申请

US20100316325A1 OPTICAL PHASE MODULATION ELEMENT AND OPTICAL MODULATOR USING THE SAME 有权
标题翻译：光学相位调制元件和光学调制器
公开(公告)号：US20100316325A1
公开(公告)日：2010-12-16
申请号：US12526107
申请日：2007-12-25
申请人： Daisuke Okamoto , Masafumi Nakada , Junichi Fujikata
发明人： Daisuke Okamoto , Masafumi Nakada , Junichi Fujikata
IPC分类号： G02F1/035
CPC分类号： G02B6/1226 , B82Y20/00 , G02B6/12007 , G02F1/015 , G02F1/025 , G02F2202/20 , G02F2203/10 , G02F2203/50
摘要： Provided is a small-size optical phase modulation element and an optical modulator using it. The optical phase modulation element includes a Plasmon waveguide having a clad made of a metal material having a complex dielectric constant having a negative real part in the used wavelength and a core formed by a dielectric metal material having a complex dielectric constant having a positive real part in the used wavelength. The Plasmon waveguide is connected to an optical waveguide including a clad and a core both having a complex dielectric constant having a positive real part. The core of the Plasmon waveguide and the core of the optical waveguide are formed, at least partially, of the same semiconductor material. The Plasmon waveguide has a function to phase-modulate the incident light when voltage is applied.
摘要翻译：提供了一种小尺寸光相位调制元件和使用它的光调制器。光学相位调制元件包括具有由金属材料制成的包层的等离子体波导，所述金属材料具有在所使用的波长中具有负实部的复介电常数和由具有正实部的复介电常数的介电金属材料形成的芯在使用的波长。等离子体波导连接到包括具有正实部的复介电常数的包层和芯的光波导。至少部分地由相同的半导体材料形成等离子体波导的核心和光波导的核心。等离子体波导具有在施加电压时对入射光进行相位调制的功能。

36. 发明授权

US06570744B1 Magnetoresistance effect film and device 失效
标题翻译：磁阻效应胶片及装置
公开(公告)号：US06570744B1
公开(公告)日：2003-05-27
申请号：US09586560
申请日：2000-05-25
申请人： Junichi Fujikata , Masafumi Nakada
发明人： Junichi Fujikata , Masafumi Nakada
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F41/302
摘要： A magnetic layer which is exchange-coupled to an antiferromagnetic layer and given an exchange bias therefrom is laminated via a non-magnetic layer on another magnetic layer to form an MR film. The antiferromagnetic layer (PtMn, PdMn or NiMn) is laminated on a ground layer(Zr, Hf, Zr—Hf, Zr—Co, Zr—Au, Ni—O, Co—O or Fe—O) so that the antiferromagnetic layer has a surface of an average roughness of 1-5 Å. A conduction layer is formed adjacent to the magnetic layer for sensing a magnetic field. The conduction layer is made of Cu, Ag, Au or an alloy composed of two selected therefrom. A layer made of Zr, Ta, Zr—O, Ta—O or a mixture thereof is laminated on the conduction layer. The MR film exhibits a large resistance variation linearly at near zero magnetic field with an excellent thermal stability.
摘要翻译：与反铁磁层交换耦合并给予交换偏压的磁性层通过非磁性层层叠在另一磁性层上以形成MR膜。将反铁磁层（PtMn，PdMn或NiMn）层叠在接地层（Zr，Hf，Zr-Hf，Zr-Co，Zr-Au，Ni-O，Co-O或Fe-O）上，具有平均粗糙度为1-5的表面。形成与磁性层相邻的感应磁场的导电层。导电层由Cu，Ag，Au或由其中选择的两者组成的合金制成。在导电层上层叠由Zr，Ta，Zr-O，Ta-O或其混合物制成的层。 MR膜在近零磁场下线性呈现出大的电阻变化，具有优异的热稳定性。

37. 发明申请

US20130113064A1 PHOTODETECTOR, OPTICAL COMMUNICATION DEVICE EQUIPPED WITH THE SAME, METHOD FOR MAKING OF PHOTODETECTOR, AND METHOD FOR MAKING OF OPTICAL COMMUNICATION DEVICE 有权
标题翻译：光电转换器，配备该光通信设备的光通信设备，光电转换器的制作方法和光通信设备的制作方法
公开(公告)号：US20130113064A1
公开(公告)日：2013-05-09
申请号：US13810360
申请日：2011-06-15
申请人： Daisuke Okamoto , Junichi Fujikata
发明人： Daisuke Okamoto , Junichi Fujikata
IPC分类号： H01L31/0232
CPC分类号： G02B6/12004 , G02B6/4214 , G02B6/4246 , G02F1/00 , H01L31/1035 , H01L31/105 , H01L31/1085
摘要： The present invention provides a photodetector which solves the problem of low sensitivity of a photodetector, an optical communication device equipped with the same, and a method for making the photodetector, and a method for making the optical communication device. The photodetector includes a substrate, a lower cladding layer arranged on the substrate, an optical waveguide arranged on the lower cladding layer, an intermediate layer arranged on the optical waveguide, a optical absorption layer arranged on the intermediate layer, a pair of electrodes arranged on the optical absorption layer, and wherein the optical absorption layer includes a IV-group or III-V-group single-crystal semiconductor, and the optical absorption layer absorbs an optical signal propagating through the optical waveguide.
摘要翻译：本发明提供了一种解决光电检测器的灵敏度低的问题的光检测器，配备该光检测器的光通信装置及其制造方法，以及制造该光通信装置的方法。该光检测器包括基板，布置在基板上的下包覆层，布置在下包层上的光波导，布置在光波导上的中间层，布置在中间层上的光吸收层，一对电极，所述光吸收层，其中所述光吸收层包括IV族或III-V族单晶半导体，并且所述光吸收层吸收通过所述光波导传播的光信号。

38. 发明申请

US20110311178A1 OPTICAL MODULATION STRUCTURE AND OPTICAL MODULATOR 有权
标题翻译：光学调制结构和光学调制器
公开(公告)号：US20110311178A1
公开(公告)日：2011-12-22
申请号：US13202680
申请日：2010-02-18
申请人： Junichi Fujikata , Jun Ushida , Akio Toda , Motofumi Saitoh
发明人： Junichi Fujikata , Jun Ushida , Akio Toda , Motofumi Saitoh
IPC分类号： G02F1/025
CPC分类号： G02F1/025
摘要： The components are a lower clad layer (102), a first silicon layer (103) that is formed on the lower clad layer (102) as a single body made of silicon of a first conduction type and has a slab region (105) that is disposed at a core (104) and on both sides of the core (104) and connects to the core, a concave section (104a) that is formed in the top surface of the core (104), and a second silicon layer (109) of a second conduction type that is formed inside the concave section (104a) with an intervening dielectric layer (108) to fill the inside of the concave section (104a).
摘要翻译：这些部件是下包层（102），第一硅层（103），其形成在下包层（102）上，作为由第一导电类型的硅制成的单体，并具有板区域（105）设置在芯部（104）处并且在芯部（104）的两侧并且连接到芯部，形成在芯部（104）的顶表面中的凹部（104a）和第二硅层（ 109），其形成在所述凹部（104a）的内部，并具有填充所述凹部（104a）的内部的中间介电层（108）。

39. 发明申请

US20110002582A1 SEMICONDUCTOR OPTICAL INTERCONNECTION DEVICE AND SEMICONDUCTOR OPTICAL INTERCONNECTION METHOD 有权
标题翻译：半导体光学互连器件和半导体光学互连方法
公开(公告)号：US20110002582A1
公开(公告)日：2011-01-06
申请号：US12919461
申请日：2009-02-10
申请人： Daisuke Okamoto , Kenichi Nishi , Junichi Fujikata , Jun Ushida
发明人： Daisuke Okamoto , Kenichi Nishi , Junichi Fujikata , Jun Ushida
IPC分类号： G02B6/12 , H01L21/02
CPC分类号： H01L25/0657 , H01L23/48 , H01L23/645 , H01L24/13 , H01L24/16 , H01L24/48 , H01L25/167 , H01L2224/13099 , H01L2224/16145 , H01L2224/48095 , H01L2224/48227 , H01L2224/73207 , H01L2225/0651 , H01L2225/06513 , H01L2225/06531 , H01L2225/06534 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/19041 , H01L2924/19042 , H01L2924/30105 , H01L2924/30107 , Y10T29/41 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chip 1 and an optical interconnection chip 2. The optical interconnection chip 2 includes an optical element formed thereon (for instance, a photo-sensitive element, a luminous element, or an optical modulator) which has a function relating to signal conversion between light and electricity. The semiconductor chip 1 includes a transmission section 3 (for instance, a coil or an inductor) to transmit signals in a non-contact manner, and a connection section 4 (for instance, a bump) to electrically connect with the optical element.
摘要翻译：提供一种半导体光互连装置，其能够在层叠半导体芯片之间的层叠半导体芯片之间传输信号，其结构是通过层叠了通过结合到光互连芯片而被高度功能化的半导体芯片。半导体光互连装置包括半导体芯片1和光互连芯片2.光互连芯片2包括形成在其上的光学元件（例如，光敏元件，发光元件或光调制器），其具有功能与光和电之间的信号转换有关。半导体芯片1包括以非接触方式传输信号的传输部分3（例如，线圈或电感器）以及与光学元件电连接的连接部分4（例如，凸块）。

40. 发明授权

US08853812B2 Photodetector, optical communication device equipped with the same, method for making of photodetector, and method for making of optical communication device 有权
标题翻译：光检测器，配备该光通信装置的光通信装置的制造方法以及光通信装置的制造方法
公开(公告)号：US08853812B2
公开(公告)日：2014-10-07
申请号：US13810360
申请日：2011-06-15
申请人： Daisuke Okamoto , Junichi Fujikata
发明人： Daisuke Okamoto , Junichi Fujikata
IPC分类号： H01L31/036 , H01L31/105 , H01L21/205 , H01L31/103 , G02F1/00 , G02B6/12 , G02B6/42
CPC分类号： G02B6/12004 , G02B6/4214 , G02B6/4246 , G02F1/00 , H01L31/1035 , H01L31/105 , H01L31/1085
摘要： The present invention provides a photodetector which solves the problem of low sensitivity of a photodetector, an optical communication device equipped with the same, and a method for making the photodetector, and a method for making the optical communication device. The photodetector includes a substrate, a lower cladding layer arranged on the substrate, an optical waveguide arranged on the lower cladding layer, an intermediate layer arranged on the optical waveguide, a optical absorption layer arranged on the intermediate layer, a pair of electrodes arranged on the optical absorption layer, and wherein the optical absorption layer includes a IV-group or III-V-group single-crystal semiconductor, and the optical absorption layer absorbs an optical signal propagating through the optical waveguide.
摘要翻译：本发明提供了一种解决光电检测器的灵敏度低的问题的光检测器，配备该光检测器的光通信装置及其制造方法，以及制造该光通信装置的方法。该光检测器包括基板，布置在基板上的下包覆层，布置在下包层上的光波导，布置在光波导上的中间层，布置在中间层上的光吸收层，一对电极，所述光吸收层，其中所述光吸收层包括IV族或III-V族单晶半导体，并且所述光吸收层吸收通过所述光波导传播的光信号。

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