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    • 33. 发明授权
    • Polysilanes, Polysiloxanes and silicone resist materials containing
these compounds
    • 聚硅烷,聚硅氧烷和含有这些化合物的硅氧烷抗蚀材料
    • US4822716A
    • 1989-04-18
    • US938874
    • 1986-12-08
    • Yasunobu OnishiShuji HayaseRumiko HoriguchiAkiko Hirao
    • Yasunobu OnishiShuji HayaseRumiko HoriguchiAkiko Hirao
    • C08G77/14C08G77/26C08G77/48C08G77/60C08L83/16G03F7/075G03C1/52
    • C08L83/16C08G77/14C08G77/26C08G77/48C08G77/60G03F7/0754G03F7/0757
    • The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.
    • 本发明的聚硅烷和聚硅氧烷是在主链中含有硅并且在侧链中含有碱性可溶性基团如苯酚基羟基和羧基的聚合物。 本发明的一种硅氧烷抗蚀剂材料包含上述聚硅烷或聚硅氧烷。 本发明的另一种硅氧烷抗蚀剂材料含有上述聚硅烷或聚硅氧烷和适当的感光剂。 本发明的另一种硅氧烷抗蚀剂材料不含上述光敏剂,代替其中含有通过主链中的硅氧烷键具有紫外线等感光性的基团。 作为具有这种光敏性的物质,可以提及例如当用紫外线照射时呈现碱溶性的邻硝基苄基甲硅烷基。 因此,本发明的有机硅抗蚀剂材料,特别是第二和第三有机硅抗蚀剂材料是碱显影的,并且还具有优异的耐氧等离子体性。 因此,它们可以用作双层抗蚀剂系统中的顶层膜,使得可以形成非常精细的抗蚀剂图案,并且具有最少数量的加工步骤。
    • 35. 发明申请
    • TWO-DIMENSIONAL DIGITAL DATA ACQUISITION ELEMENT AND HOLOGRAPHIC STORAGE APPARATUS
    • 二维数字采集元件和全息存储设备
    • US20080267040A1
    • 2008-10-30
    • US12109633
    • 2008-04-25
    • Yoshinori IidaHiroto HondaAkiko HiraoKazuki Matsumoto
    • Yoshinori IidaHiroto HondaAkiko HiraoKazuki Matsumoto
    • G11B7/00
    • G11B7/0065G11B7/131G11B7/1372G11C13/044G11C13/047
    • A two-dimensional digital data acquisition element includes: a pixel area having a plurality of pixels arranged in a matrix form, each of the pixels having a photoelectric conversion element to convert the reproduced light from the optical information recording medium to an electric signal; selection circuits which select the pixel; a readout circuit which reads out an electric signal of a pixel selected by the selection circuits; and a 1-bit AD converter which converts an output of the readout circuit to 1-bit digital data. A pitch ratio N between a pitch P1 of the unit data areas in the two-dimensional digital image information and a pitch P2 of the pixels in the pixel area defined as N=P1/P2 satisfies a relation A·n2/(An+1)
    • 二维数字数据采集元件包括:具有以矩阵形式布置的多个像素的像素区域,每个像素具有光电转换元件,用于将来自光信息记录介质的再现光转换为电信号; 选择像素的选择电路; 读出电路,读出由选择电路选择的像素的电信号; 以及将读出电路的输出转换为1位数字数据的1位AD转换器。 二维数字图像信息中的单位数据区域的间距P1与定义为N = P 1 / P 2的像素区域中的像素的间距P 2之间的间距比N满足< -formulae description =“In-line Formulas”end =“lead”?> An 2 /(An + 1) /(An-1) <?in-line-formula description =“在线公式”end =“tail”?>其中A是二维数字数据的一个字节的一维方向上的数字数据的数量,n是自然的 至少数2。