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31. 发明授权

US6025636A Surface acoustic wave device incorporating single crystal LiNbO.sub.3 失效
标题翻译：结合单晶LiNbO3的表面声波器件
公开(公告)号：US6025636A
公开(公告)日：2000-02-15
申请号：US951615
申请日：1997-10-16
申请人： Hideaki Nakahata , Masashi Narita , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Masashi Narita , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
IPC分类号： H03H9/02 , H01L29/82
CPC分类号： H03H9/02582
摘要： A surface acoustic wave device includes at least diamond, a single crystal LiNbO.sub.3 layer formed on the diamond, and an interdigital transducer formed in contact with the LiNbO.sub.3 layer and uses a surface acoustic wave (wavelength: .lambda..sub.n .mu.m) in an nth-order mode (n=1 or 2). When the thickness of the LiNbO.sub.3 layer is t.sub.1 (.mu.m), kh.sub.1 =2.pi.(t.sub.1 /.lambda..sub.n) and the cut orientation (.theta., .PHI., and .psi. represented by an Eulerian angle representation) with respect to the crystallographic fundamental coordinate system of the LiNbO.sub.3 layer are selected from values within specific ranges. Consequently, a surface acoustic wave device which increases the propagation velocity (V) of a surface acoustic wave and improves the electromechanical coupling coefficient (K.sup.2) is realized.
摘要翻译：表面声波装置至少包括金刚石，形成在金刚石上的单晶LiNbO 3层和与LiNbO 3层接触形成的叉指换能器，并使用n阶的表面声波（波长：λnμm）模式（n = 1或2）。当LiNbO 3层的厚度为t1（μm）时，相对于晶体基础坐标系，kh1 =2π（t1 /λn）和切割取向（θ，PHI和由欧拉角表示的psi）的LiNbO 3层选自特定范围内的值。因此，实现了提高声表面波的传播速度（V）并提高机电耦合系数（K2）的声表面波装置。

32. 发明授权

US5783896A Diamond-Zn0 surface acoustic wave device 失效
标题翻译： Diamond-Zn0表面声波装置
公开(公告)号：US5783896A
公开(公告)日：1998-07-21
申请号：US791894
申请日：1997-01-31
申请人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
IPC分类号： H03H9/02 , H03H9/10 , H03H9/145
CPC分类号： H03H9/02582
摘要： A first surface acoustic wave device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention is a SAW device of "type A" device shown in FIG. 6A, wherein a parameter kh3=2.pi.(t.sub.A /.lambda.) is: 0.033.ltoreq.kh3.ltoreq.0.099, and wherein a parameter kh1=2.pi.(t.sub.z /.lambda.) and a parameter kh2=2.pi.(t.sub.s /.lambda.) are given within a region ABCDEFGHIJKLA in a two-dimensional Cartesin coordinate graph of FIG. 1.
摘要翻译：根据本发明的波长λ（μm）的第二模式表面声波的第一表面声波装置是图1所示的“A型”装置的SAW装置。其中参数kh3 =2π（tA /λ）为：0.033≤kh3

33. 发明授权

US06320296B1 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 失效
公开(公告)号：US06320296B1
公开(公告)日：2001-11-20
申请号：US09825887
申请日：2001-04-05
申请人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
发明人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
IPC分类号： H10L4108
CPC分类号： H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.

34. 发明授权

US06356006B1 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 失效
标题翻译：金刚石晶片，估计金刚石晶片和金刚石表面声波器件的方法
公开(公告)号：US06356006B1
公开(公告)日：2002-03-12
申请号：US09543415
申请日：2000-04-05
申请人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
发明人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
IPC分类号： B32B3300
CPC分类号： H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond,surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.
摘要翻译：通过用薄金属膜涂覆表面来检查金刚石晶体的表面，以倾斜的角度将激光束发射到金刚石表面，通过光束的散射检测金刚石表面上的缺陷和颗粒，并通过激光扫描计算缺陷和颗粒表面缺陷检测装置。金刚石SAW器件应在缺陷密度小于300颗粒cm-2的金刚石膜或块上制成。优选地，金刚石，表面应具有小于Ra20nm的粗糙度。金刚石SAW滤波器可以通过沉积压电膜并在低缺陷密度的金刚石晶体上形成叉指式换能器来制造。

35. 发明授权

US5838090A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5838090A
公开(公告)日：1998-11-17
申请号：US972162
申请日：1997-11-17
申请人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
IPC分类号： H03H3/08 , H03H3/10 , H03H9/02 , H03H9/145 , H03H9/25 , H03H9/00
CPC分类号： H03H9/02582
摘要： An object of the present invention is to improve an SAW propagation velocity V, an electromechanical coupling coefficient (K.sup.2), and a delay time temperature coefficient (TCD) to achieve a high-frequency SAW device and power saving and size reduction of the device. An SAW device according to the present invention includes at least diamond as a substrate material, a c-axis oriented polycrystalline LiNbO.sub.3 layer, arranged on the diamond, an SiO.sub.2 layer arranged on the LiNbO.sub.3 layer, and an interdigital transducer and uses an SAW in an nth mode (n=0, 1, 2: wavelength: .lambda. .mu.m). When the thickness of the LiNbO.sub.3 layer is t.sub.1 (.mu.m), and the thickness of the SiO.sub.2 layer is t.sub.2 (.mu.m), kh.sub.1 =2.pi.(t.sub.1 /.lambda.) and kh.sub.2 =2.pi.(t.sub.2 /.lambda.) fall within predetermined ranges. In addition, the mode of the SAW is selected. With this arrangement, an SAW device having a propagation velocity (V) of 7,000 m/s or more, an electromechanical coupling coefficient (K.sup.2) of 2% or more, and a coefficient TCD of .+-.10 ppm/.degree.C. or less, which is the stability of the device frequency with respect to the temperature, can be provided.
摘要翻译：本发明的目的是提高SAW传播速度V，机电耦合系数（K2）和延迟时间温度系数（TCD），以实现高频SAW器件，并且节省设备的功率和尺寸。根据本发明的SAW器件至少包括作为衬底材料的金刚石，布置在金刚石上的c轴取向的多晶LiNbO 3层，布置在LiNbO 3层上的SiO 2层，以及叉指换能器，并且使用第n个模式（n = 0,1,2：波长：λm）。当LiNbO 3层的厚度为t1（μm），SiO 2层的厚度为t2（μm）时，kh1 =2π（t1 /λ），kh2 =2π（t2 /λ）落在规定的范围内范围。此外，选择SAW的模式。根据该结构，具有传播速度（V）为7000m / s以上，机电耦合系数（K2）为2％以上，系数TCD为+/- 10ppm /℃的SAW器件，或可以提供相对于温度的装置频率的稳定性。

36. 发明授权

US5777422A Diamond-ZnO surface acoustic wave device having relatively thinner ZnO piezoelectric layer 失效
标题翻译：具有较薄的ZnO压电层的金刚石 - ZnO表面声波器件
公开(公告)号：US5777422A
公开(公告)日：1998-07-07
申请号：US720369
申请日：1996-09-27
申请人： Hiroyuki Kitabayashi , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Shin-ichi Shikata
发明人： Hiroyuki Kitabayashi , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Shin-ichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H01L41/08
CPC分类号： H03H9/02582
摘要： The present invention directed to a SAW device comprising a diamond layer thinner ZnO layer, which can be operated at higher frequency, with superior characteristics including less energy loss. The first SAW device according to the present invention comprises a layer constitution shown in FIG. 23, wherein, for 0th mode surface acoustic wave having a wavelength .lambda., a parameter kh3 =(2.pi./.lambda.)t3 satisfies: 0.0470.ltoreq.kh3.ltoreq.0.0625, and wherein a parameter kh1 =(2.pi./.lambda.)t1 and a parameter kh2=(2.pi./.lambda.)t2 are given within a region A-B-C-D-E-F-A in a two-dimensional Cartesian coordinate graph having ordinate axis of the kh1 and abscissa axis of kh2, the outer edge of the region A-B-C-D-E-F-A being given by a closed chain in the Cartesian coordinate, consisting of points A, B, C, D, E, and F, and lines A-B, B-C, C-D, D-E, E-F and F-A, as shown in a two-dimensional Cartesian coordinate graph of FIG. 3.
摘要翻译：本发明涉及一种SAW器件，其包括可以以更高频率操作的金刚石层更薄的ZnO层，具有包括较少能量损失的优异特性。根据本发明的第一SAW器件包括图1所示的层结构。 23，其中，对于具有波长λ的第0模式声表面波，参数kh3 =（2π/λ）t3满足：0.0470≤kh3≤0.0625，并且其中参数kh1 =（2π/λ） t1和参数kh2 =（2 pi /λ）t2在具有kh1和横坐标轴kh2的纵坐标轴的二维笛卡尔坐标图中的区域ABCDEFA内给出，区域ABCDEFA的外边缘由a 由点A，B，C，D，E和F以及线AB，BC，CD，DE，EF和FA组成的笛卡尔坐标中的闭合链，如图2的二维笛卡尔坐标图所示。 3。

37. 发明授权

US5959389A Diamond-ZnO surface acoustic wave device 失效
标题翻译：金刚石 - ZnO表面声波装置
公开(公告)号：US5959389A
公开(公告)日：1999-09-28
申请号：US964469
申请日：1997-11-04
申请人： Hideaki Nakahata , Tomoki Uemura , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Tomoki Uemura , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
IPC分类号： H03H9/02 , H03H9/10 , H03H9/145
CPC分类号： H03H9/02582
摘要： A first surface acoustic wave device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention is a SAW device of "type A" device shown in FIG. 6A, wherein a parameter kh3=2.pi.(t.sub.A /.lambda.) is: 0.033.ltoreq.kh3.ltoreq.0.099, and wherein a parameter kh1=2.pi.(t.sub.Z /.lambda.) and a parameter kh2=2.pi.(t.sub.S /.lambda.) are given within a region ABCDEFGHIJKLA in a two-dimensional Cartesin coordinate graph of FIG. 1.
摘要翻译：根据本发明的波长λ（μm）的第二模式表面声波的第一表面声波装置是图1所示的“A型”装置的SAW装置。其中参数kh3 =2π（tA /λ）为：0.033≤kh3

38. 发明授权

US5888646A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5888646A
公开(公告)日：1999-03-30
申请号：US808956
申请日：1997-02-19
申请人： Yoshihiro Takahashi , Yasushi Yamamoto , Natsuhiko Sakairi , Shin-Ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi
发明人： Yoshihiro Takahashi , Yasushi Yamamoto , Natsuhiko Sakairi , Shin-Ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H01L41/16
CPC分类号： H03H9/02582 , Y10T428/24926 , Y10T428/265 , Y10T428/30
摘要： A surface acoustic wave device comprises a diamond layer (12) or a substrate (11) with a diamond layer (12) formed thereon, an Al electrode (13) formed on the diamond layer (12), and a ZnO piezoelectric thin film layer (14) formed on the diamond layer (12) with the Al electrode (13) covered by the ZnO piezoelectric thin film layer (14). The ZnO piezoelectric thin film layer (14) has a thickness h1 within a range defined by 0.65.ltoreq.kh1.ltoreq.0.75 while the Al electrode (13) has a thickness h2 within a range defined by 0.03.ltoreq.kh2.ltoreq.0.04, where k is given by k=2 .pi./.lambda. and .lambda. represents an electrode period.
摘要翻译：表面声波装置包括金刚石层（12）或其上形成有金刚石层（12）的基板（11），形成在金刚石层（12）上的Al电极（13）和ZnO压电薄膜层（14），其上形成有由ZnO压电薄膜层（14）覆盖的Al电极（13）的金刚石层（12）上。 ZnO压电薄膜层（14）的厚度h1在0.65≤kh1≤75的范围内，而Al电极（13）的厚度h2在0.03≤kh2< = 0.04，其中k由k =2π/λ给出，λ表示电极周期。

39. 发明授权

US09040955B2 Semiconductor device, optical sensor device and semiconductor device manufacturing method 有权
标题翻译：半导体装置，光传感器装置及半导体装置的制造方法
公开(公告)号：US09040955B2
公开(公告)日：2015-05-26
申请号：US13505226
申请日：2011-05-19
申请人： Kei Fujii , Katsushi Akita , Takashi Ishizuka , Hideaki Nakahata , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
发明人： Kei Fujii , Katsushi Akita , Takashi Ishizuka , Hideaki Nakahata , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
IPC分类号： H01L31/0352 , H01L31/105 , B82Y20/00
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03046 , H01L31/105 , H01L31/1844
摘要： Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z≧−0.4x+24.6 is satisfied.
摘要翻译：提供了一种半导体器件和光学传感器装置，每个具有减小的暗电流，并且在近红外线中向较长波长延伸的检测能力。此外，提供了一种用于制造半导体器件的方法。半导体器件50包括位于InP衬底1上的II型（GaAsSb / InGaAs）MQW结构的吸收层3和位于MQW结构上的InP接触层5。在MQW结构中，GaAsSb的组成x（％）不小于44％，其厚度z（nm）不小于3nm，并且z≥-0.4x + 24.6。

40. 发明授权

US08715414B2 Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer 有权
标题翻译： Si（1-v-w-x）CwAlxNv基材的制造方法，外延晶片的制造方法，Si（1-v-w-x）CwAlxNv母材，外延片
公开(公告)号：US08715414B2
公开(公告)日：2014-05-06
申请号：US12989036
申请日：2009-04-17
申请人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： C30B29/38
CPC分类号： C30B29/36 , C23C4/185 , C23C16/34 , C30B23/02 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02529 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： There are provided a Si(1-v-w-x)CwAlxNv substrate that achieves high crystallinity and low costs, an epitaxial wafer, and manufacturing methods thereof.A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate according to the present invention includes the steps of preparing a different type of substrate 11 and growing a Si(1-v-w-x)CwAlxNv layer having a main surface on the different type of substrate 11. The component ratio x+v at the main surface of the Si(1-v-w-x)CwAlxNv layer is 0
摘要翻译：提供了实现高结晶度和低成本的Si（1-v-w-x）C w Al x N v衬底，外延晶片及其制造方法。根据本发明的用于制造Si（1-vwx）CwAlxNv衬底的方法包括以下步骤：制备不同类型的衬底11并在不同类型的衬底上生长具有主表面的Si（1-vwx）C w Al x N v层 Si（1-vwx）CwAlxNv层的主表面的分量比x + v为0

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