专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US07929346B2 Memory data detecting apparatus and method for controlling reference voltage based on error in stored data 有权
标题翻译：存储器数据检测装置和基于存储数据中的误差来控制参考电压的方法
公开(公告)号：US07929346B2
公开(公告)日：2011-04-19
申请号：US12216745
申请日：2008-07-10
申请人： Dong Hun Yu , Kyoung Lae Cho , Dong Hyuk Chae , Jun Jin Kong , Jae Hong Kim , Seung-Hwan Song
发明人： Dong Hun Yu , Kyoung Lae Cho , Dong Hyuk Chae , Jun Jin Kong , Jae Hong Kim , Seung-Hwan Song
IPC分类号： G11C16/06 , G11C16/34 , G11C16/26
CPC分类号： G11C7/1006 , G11C7/14 , G11C11/5642 , G11C29/00 , G11C29/028 , G11C29/42 , G11C29/50 , G11C2211/5634
摘要： Example embodiments may relate to a method and an apparatus for reading data stored in a memory, for example, providing a method and an apparatus for controlling a reference voltage based on an error of the stored data. Example embodiments may provide a memory data detecting apparatus including a first voltage comparator to compare a threshold voltage of a memory cell with a first reference voltage, a first data determiner to determine a value of at least one data bit stored in the memory cell according to a result of the comparison, an error verifier to verify whether an error occurs in the determined value, a reference voltage determiner to determine a second reference voltage that is lower than the first reference voltage based on a result of the verification, and a second data determiner to re-determine the value of the data based on the determined second reference voltage.
摘要翻译：示例性实施例可以涉及用于读取存储在存储器中的数据的方法和装置，例如提供一种基于存储的数据的错误来控制参考电压的方法和装置。示例性实施例可以提供一种存储器数据检测装置，其包括用于将存储器单元的阈值电压与第一参考电压进行比较的第一电压比较器，第一数据确定器，用于根据存储器单元存储的至少一个数据位的值，根据比较结果，用于验证所确定的值是否发生错误验证器，基于验证结果确定低于第一参考电压的第二参考电压的参考电压确定器，以及第二数据确定器，以基于所确定的第二参考电压重新确定数据的值。

32. 发明申请

US20100254195A1 Memory device and method for estimating characteristics of multi-bit programming 有权
标题翻译：用于估计多位编程特性的存储器件和方法
公开(公告)号：US20100254195A1
公开(公告)日：2010-10-07
申请号：US12801505
申请日：2010-06-11
申请人： Kyoung Lae Cho , Seung-Hwan Song , Yoon Dong Park , Jun Jin Kong , Jae Hong Kim
发明人： Kyoung Lae Cho , Seung-Hwan Song , Yoon Dong Park , Jun Jin Kong , Jae Hong Kim
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C16/32 , G11C16/349 , G11C29/00 , G11C2211/5634
摘要： Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell.
摘要翻译：提供了可以估计多位单元特性的存储器件和/或方法。存储器设备可以包括：多位单元阵列; 监测单元，用于提取从对应于存储在多位单元阵列中的数据的多个阈值电压状态中选择的参考阈值电压状态的时间值的阈值电压变化; 以及估计单元，用于基于所提取的阈值电压变化来估计所述多个阈值电压状态的时间值的阈值电压变化。由此，可以监视存储单元的阈值电压随时间的变化。

33. 发明申请

US20090175076A1 Memory device and method for estimating characteristics of multi-bit cell 有权
标题翻译：用于估计多位单元特性的存储器件和方法
公开(公告)号：US20090175076A1
公开(公告)日：2009-07-09
申请号：US12213657
申请日：2008-06-23
申请人： Kyoung Lae Cho , Seung-Hwan Song , Yoon Dong Park , Jun Jin Kong , Jae-Hong Kim
发明人： Kyoung Lae Cho , Seung-Hwan Song , Yoon Dong Park , Jun Jin Kong , Jae-Hong Kim
IPC分类号： G11C16/00 , G11C7/00
CPC分类号： G11C11/5628 , G11C16/32 , G11C16/349 , G11C29/00 , G11C2211/5634
摘要： Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell.
摘要翻译：提供了可以估计多位单元特性的存储器件和/或方法。存储器设备可以包括：多位单元阵列; 监测单元，用于提取从对应于存储在多位单元阵列中的数据的多个阈值电压状态中选择的参考阈值电压状态的时间值的阈值电压变化; 以及估计单元，用于基于所提取的阈值电压变化来估计所述多个阈值电压状态的时间值的阈值电压变化。由此，可以监视存储单元的阈值电压随时间的变化。

34. 发明授权

US08305818B2 Memory device and method for estimating characteristics of multi-bit programming 有权
标题翻译：用于估计多位编程特性的存储器件和方法
公开(公告)号：US08305818B2
公开(公告)日：2012-11-06
申请号：US13303353
申请日：2011-11-23
申请人： Kyoung Lae Cho , Seung-Hwan Song , Yoon Dong Park , Jun Jin Kong , Jae-Hong Kim
发明人： Kyoung Lae Cho , Seung-Hwan Song , Yoon Dong Park , Jun Jin Kong , Jae-Hong Kim
IPC分类号： G11C11/34
CPC分类号： G11C11/5628 , G11C16/32 , G11C16/349 , G11C29/00 , G11C2211/5634
摘要： Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell.
摘要翻译：提供了可以估计多位单元特性的存储器件和/或方法。存储器设备可以包括：多位单元阵列; 监测单元，用于提取从对应于存储在多位单元阵列中的数据的多个阈值电压状态中选择的参考阈值电压状态的时间值的阈值电压变化; 以及估计单元，用于基于所提取的阈值电压变化来估计所述多个阈值电压状态的时间值的阈值电压变化。由此，可以监视存储单元的阈值电压随时间的变化。

35. 发明申请

US20120069654A1 MEMORY DEVICE AND METHOD FOR ESTIMATING CHARACTERISTICS OF MULTI-BIT PROGRAMMING 有权
标题翻译：用于估计多位编程特性的存储器件和方法
公开(公告)号：US20120069654A1
公开(公告)日：2012-03-22
申请号：US13303353
申请日：2011-11-23
申请人： Kyoung Lae CHO , Seung-Hwan Song , Yoong Dong Park , Jun Jin Kong , Jae Hong Kim
发明人： Kyoung Lae CHO , Seung-Hwan Song , Yoong Dong Park , Jun Jin Kong , Jae Hong Kim
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C16/32 , G11C16/349 , G11C29/00 , G11C2211/5634
摘要： Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell.
摘要翻译：提供了可以估计多位单元特性的存储器件和/或方法。存储器设备可以包括：多位单元阵列; 监测单元，用于提取从对应于存储在多位单元阵列中的数据的多个阈值电压状态中选择的参考阈值电压状态的时间值的阈值电压变化; 以及估计单元，用于基于所提取的阈值电压变化来估计所述多个阈值电压状态的时间值的阈值电压变化。由此，可以监视存储单元的阈值电压随时间的变化。

36. 发明授权

US07864574B2 Memory device and memory programming method 有权
标题翻译：存储器和存储器编程方法
公开(公告)号：US07864574B2
公开(公告)日：2011-01-04
申请号：US12453108
申请日：2009-04-29
申请人： Kyoung Lae Cho , Yong June Kim , Seung-Hwan Song , Jun Jin Kong
发明人： Kyoung Lae Cho , Yong June Kim , Seung-Hwan Song , Jun Jin Kong
IPC分类号： G11C11/34
CPC分类号： G11C16/10 , G11C11/5628 , G11C2211/5621
摘要： Provided are memory devices and memory programming methods. A memory device may include a multi-bit cell array including a plurality of multi-bit cells, a programming unit configured to program a first data page in the plurality of multi-bit cells and to program a second data page in the multi-bit cells with the programmed first data page, a first controller configured to divide the multi-bit cells with the programmed first data page into a first group and a second group, and a second controller configured to set a target threshold voltage interval of each of the multi-bit cells included in the first group based on first read voltage levels and the second data page, and to set a target threshold voltage interval of each of the multi-bit cells included in the second group based on second read threshold voltage levels and the second data page.
摘要翻译：提供的是存储器件和存储器编程方法。存储器件可以包括包括多个多位单元的多位单元阵列，编程单元，被配置为对多个多位单元中的第一数据页进行编程，并编程多位单元中的第二数据页具有编程的第一数据页的单元，被配置为将多位单元与编程的第一数据页划分为第一组和第二组的第一控制器，以及配置成将每个的第一数据页的目标阈值电压间隔基于第一读取电压电平和第二数据页面包括在第一组中的多位单元，并且基于第二读取阈值电压电平来设置包括在第二组中的每个多位单元的目标阈值电压间隔，以及第二个数据页面。

37. 发明申请

US20090207671A1 Memory data detecting apparatus and method for controlling reference voltage based on error in stored data 有权
标题翻译：存储器数据检测装置和基于存储数据中的误差来控制参考电压的方法
公开(公告)号：US20090207671A1
公开(公告)日：2009-08-20
申请号：US12216745
申请日：2008-07-10
申请人： Dong Hun Yu , Kyoung Lae Cho , Dong Hyuk Chae , Jun Jin Kong , Jae Hong Kim , Seung-Hwan Song
发明人： Dong Hun Yu , Kyoung Lae Cho , Dong Hyuk Chae , Jun Jin Kong , Jae Hong Kim , Seung-Hwan Song
IPC分类号： G11C7/00 , G11C29/04
CPC分类号： G11C7/1006 , G11C7/14 , G11C11/5642 , G11C29/00 , G11C29/028 , G11C29/42 , G11C29/50 , G11C2211/5634
摘要： Example embodiments may relate to a method and an apparatus for reading data stored in a memory, for example, providing a method and an apparatus for controlling a reference voltage based on an error of the stored data. Example embodiments may provide a memory data detecting apparatus including a first voltage comparator to compare a threshold voltage of a memory cell with a first reference voltage, a first data determiner to determine a value of at least one data bit stored in the memory cell according to a result of the comparison, an error verifier to verify whether an error occurs in the determined value, a reference voltage determiner to determine a second reference voltage that is lower than the first reference voltage based on a result of the verification, and a second data determiner to re-determine the value of the data based on the determined second reference voltage.
摘要翻译：示例性实施例可以涉及用于读取存储在存储器中的数据的方法和装置，例如提供一种基于存储的数据的错误来控制参考电压的方法和装置。示例性实施例可以提供一种存储器数据检测装置，其包括用于将存储器单元的阈值电压与第一参考电压进行比较的第一电压比较器，第一数据确定器，用于根据存储器单元存储的至少一个数据位的值，根据比较结果，用于验证所确定的值是否发生错误验证器，基于验证结果确定低于第一参考电压的第二参考电压的参考电压确定器，以及第二数据确定器，以基于所确定的第二参考电压重新确定数据的值。

38. 发明申请

US20090182934A1 Memory device and method of multi-bit programming 失效
标题翻译：多位编程的存储器件和方法
公开(公告)号：US20090182934A1
公开(公告)日：2009-07-16
申请号：US12155647
申请日：2008-06-06
申请人： Jaehong Kim , Kyoung Lae Cho , Jun Jin Kong , Heeseok Eun , Seung-Hwan Song
发明人： Jaehong Kim , Kyoung Lae Cho , Jun Jin Kong , Heeseok Eun , Seung-Hwan Song
IPC分类号： G06F12/02 , G11C16/04 , G11C7/00
CPC分类号： G11C11/5628 , G11C11/5671 , G11C29/00
摘要： Memory devices and multi-bit programming methods are provided. A memory device may include a plurality of memory units; a data separator that separates data into a plurality of groups; a selector that rotates each of the plurality of groups and transmits each of the groups to at least one of the plurality of memory units. The plurality of memory units may include page buffers that may program the transmitted group in a plurality of multi-bit cell arrays using a different order of a page programming operation. Through this, evenly reliable data pages may be generated.
摘要翻译：提供了存储器件和多位编程方法。存储器件可以包括多个存储器单元; 数据分离器，将数据分离成多个组; 选择器，其使所述多个组中的每一个旋转，并将所述组中的每一个发送到所述多个存储器单元中的至少一个。多个存储器单元可以包括可以使用页面编程操作的不同顺序对多个多位单元阵列中的发送组进行编程的页缓冲器。通过此，可能会生成均匀可靠的数据页。

39. 发明授权

US08276046B2 Apparatus for determining number of bits to be stored in memory cell 失效
标题翻译：用于确定要存储在存储单元中的位数的装置
公开(公告)号：US08276046B2
公开(公告)日：2012-09-25
申请号：US12219103
申请日：2008-07-16
申请人： Seung-Hwan Song , Kyoung Lae Cho , Jun Jin Kong , Jae Hong Kim
发明人： Seung-Hwan Song , Kyoung Lae Cho , Jun Jin Kong , Jae Hong Kim
IPC分类号： H03M13/00
CPC分类号： G11C11/56 , G06F11/1012 , G11C29/00
摘要： Example embodiments relate to an apparatus which may determine a length of data to be stored in a memory cell, and may store the data in a memory based on the determined length. A memory data storage apparatus according to example embodiments may, include: a determination unit that may determine a number of bits of data and a number of bits of data detection information to be stored in a memory cell; a data receiving unit that may receive data corresponding to the determined number of bits; an error correction coding unit that may perform an error correction coding with respect to the received data and generate data detection information corresponding to the number of bits of the data detection information; and a data storage unit that may store the received data and generated data detection information in the memory cell.
摘要翻译：示例性实施例涉及可以确定要存储在存储器单元中的数据的长度的装置，并且可以基于所确定的长度将数据存储在存储器中。根据示例实施例的存储器数据存储装置可以包括：确定单元，其可以确定要存储在存储器单元中的数据的位数和数据检测信息的位数; 数据接收单元，其可以接收与所确定的位数相对应的数据; 纠错编码单元，其可以对所接收的数据执行纠错编码，并生成与数据检测信息的位数相对应的数据检测信息; 以及数据存储单元，其可以将所接收的数据和生成的数据检测信息存储在存储单元中。

40. 发明授权

US07746702B2 Memory device and method for estimating characteristics of multi-bit programming 有权
公开(公告)号：US07746702B2
公开(公告)日：2010-06-29
申请号：US12213657
申请日：2008-06-23
申请人： Kyoung Lae Cho , Seung-Hwan Song , Yoon Dong Park , Jun Jin Kong , Jae-Hong Kim
发明人： Kyoung Lae Cho , Seung-Hwan Song , Yoon Dong Park , Jun Jin Kong , Jae-Hong Kim
IPC分类号： G11C11/34
CPC分类号： G11C11/5628 , G11C16/32 , G11C16/349 , G11C29/00 , G11C2211/5634
摘要： Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式