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31. 发明授权

US08388411B2 Method for polishing the edge of a semiconductor wafer 有权
标题翻译：抛光半导体晶片边缘的方法
公开(公告)号：US08388411B2
公开(公告)日：2013-03-05
申请号：US12774025
申请日：2010-05-05
申请人： Juergen Schwandner
发明人： Juergen Schwandner
IPC分类号： B24B1/00
CPC分类号： H01L21/02021 , B24B9/065 , B24B37/02 , B24D13/12
摘要： A method for polishing the edge of a semiconductor wafer comprises (a) providing a semiconductor wafer which has been polished on its side surfaces and which has a rounded edge; (b) polishing the edge of the wafer by fixing the semiconductor wafer on a centrally rotating chuck, delivering the wafer to a centrally rotating polishing drum, which is inclined with respect to the chuck and to which a polishing pad containing fixedly bonded abrasives is applied, and pressing semiconductor wafer and polishing drum onto one another while a polishing agent solution containing no solids is continuously supplied.
摘要翻译：一种用于抛光半导体晶片的边缘的方法包括：（a）提供已经在其侧表面上抛光且具有圆形边缘的半导体晶片; （b）通过将半导体晶片固定在中心旋转的卡盘上来抛光晶片的边缘，将晶片输送到相对于卡盘倾斜的中心旋转的抛光滚筒，并且将包含固定结合的磨料的抛光垫并且将半导体晶片和抛光滚筒彼此压制，同时不间断地供给不含固体的抛光剂溶液。

32. 发明授权

US08338302B2 Method for polishing a semiconductor wafer with a strained-relaxed Si1−xGex layer 有权
标题翻译：用应变松弛Si1-xGex层研磨半导体晶片的方法
公开(公告)号：US08338302B2
公开(公告)日：2012-12-25
申请号：US12610399
申请日：2009-11-02
申请人： Juergen Schwandner , Roland Koppert
发明人： Juergen Schwandner , Roland Koppert
IPC分类号： H01L21/302
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/304
摘要： Semiconductor wafer provided with a strain-relaxed layer of Si1-xGex, are polished in a first step of mechanical machining of the Si1-xGex layer of the semiconductor wafer in a polishing machine using a polishing pad containing fixedly bonded abrasive materials having a particle size of 0.55 μm or less, and also a second step of a chemomechanical machining of the previously mechanically machined Si1-xGex layer of the semiconductor wafer using a polishing pad and with supply of a polishing agent slurry containing abrasive materials.
摘要翻译：具有应变松弛层Si1-xGex的半导体晶片在抛光机中使用包含固定结合的研磨材料的研磨垫的机械加工半导体晶片的Si1-xGex层的第一步进行抛光为0.55μm以下，也是使用抛光垫对先前机械加工的半导体晶片的Si1-xGex层的化学机械加工以及提供含有研磨材料的研磨剂浆料的第二步骤。

33. 发明申请

US20110244762A1 METHOD FOR THE DOUBLE-SIDE POLISHING OF A SEMICONDUCTOR WAFER 有权
标题翻译：半导体波形双面抛光方法
公开(公告)号：US20110244762A1
公开(公告)日：2011-10-06
申请号：US13041477
申请日：2011-03-07
申请人： Juergen Schwandner , Thomas Buschhardt , Roland Koppert
发明人： Juergen Schwandner , Thomas Buschhardt , Roland Koppert
IPC分类号： B24B1/00
CPC分类号： H01L21/02024 , B24B37/044 , B24B37/08
摘要： A method for double-side polishing of a semiconductor wafer includes situating the semiconductor wafer in a cutout of a carrier that is disposed in a working gap between an upper polishing plate covered by a first polishing pad and a lower polishing plate covered by a second polishing pad. The first and second polishing pads each include tiled square segments that are formed by an arrangement of channels on the pads, where the square segments of the first pad are larger than the segments of the second pad. The square segments of the polishing pads include abrasives. During polishing, the carrier is guided such that a portion of the wafer temporarily projects laterally outside of the working gap. A polishing agent with a pH that is variable is supplied during polishing at a pH in a range of 11 to 12.5 during a first step and at a pH of at least 13 during a second step.
摘要翻译：一种用于半导体晶片的双面抛光的方法包括将半导体晶片置于载体的切口中，所述载体的切口位于由第一抛光垫覆盖的上抛光板和被第二抛光覆盖的下抛光板之间的工作间隙中垫。第一和第二抛光垫各自包括通过焊盘上的通道布置形成的平铺方形区段，其中第一焊盘的正方形段大于第二焊盘的段。抛光垫的方形片段包括磨料。在抛光期间，载体被引导使得晶片的一部分临时突出到工作间隙外侧。在第一步骤期间，在pH为11至12.5的范围内，在第二步骤期间，在至少13℃的pH下，在抛光期间提供pH可变的抛光剂。

34. 发明申请

US20100330885A1 Method For Polishing The Edge Of A Semiconductor Wafer 有权
标题翻译：抛光半导体晶片边缘的方法
公开(公告)号：US20100330885A1
公开(公告)日：2010-12-30
申请号：US12774025
申请日：2010-05-05
申请人： Juergen Schwandner
发明人： Juergen Schwandner
IPC分类号： B24B1/00
CPC分类号： H01L21/02021 , B24B9/065 , B24B37/02 , B24D13/12
摘要： A method for polishing the edge of a semiconductor wafer comprises (a) providing a semiconductor wafer which has been polished on its side surfaces and which has a rounded edge; (b) polishing the edge of the wafer by fixing the semiconductor wafer on a centrally rotating chuck, delivering the wafer to a centrally rotating polishing drum, which is inclined with respect to the chuck and to which a polishing pad containing fixedly bonded abrasives is applied, and pressing semiconductor wafer and polishing drum onto one another while a polishing agent solution containing no solids is continuously supplied.
摘要翻译：一种用于抛光半导体晶片的边缘的方法包括：（a）提供已经在其侧表面上抛光且具有圆形边缘的半导体晶片; （b）通过将半导体晶片固定在中心旋转的卡盘上来抛光晶片的边缘，将晶片输送到相对于卡盘倾斜的中心旋转的抛光滚筒，并且将包含固定结合的磨料的抛光垫并且将半导体晶片和抛光滚筒彼此压制，同时不间断地供给不含固体的抛光剂溶液。

35. 发明申请

US20100330883A1 Method For The Local Polishing Of A Semiconductor Wafer 有权
标题翻译：半导体晶片的局部抛光方法
公开(公告)号：US20100330883A1
公开(公告)日：2010-12-30
申请号：US12774163
申请日：2010-05-05
申请人： Juergen Schwandner
发明人： Juergen Schwandner
IPC分类号： B24B1/00
CPC分类号： B24B37/042 , B24B37/30 , H01L21/02021 , H01L21/02024
摘要： The edge region of one side of a semiconductor wafer is polished by pressing the wafer by means of a rotatable polishing head against a polishing pad lying on a rotating polishing plate, and containing fixed abrasive. The polishing head is provided with a resilient membrane radially subdivided into a plurality of chambers by gas or liquid cushions, the polishing pressure independently selectable for each chamber. The wafer is held in position during polishing by a retainer ring pressed against the polishing pad with an application pressure, a polishing agent is introduced between the wafer and the polishing pad, and the polishing pressure exerted on the wafer in a chamber lying in the edge region of the wafer of the polishing head, and the application pressure of the retainer ring, are selected so that material is essentially removed only at the edge of the wafer.
摘要翻译：通过可旋转抛光头将晶片压靠在位于旋转的抛光板上的抛光垫并且包含固定的研磨剂来抛光半导体晶片的一侧的边缘区域。抛光头设置有通过气体或液体衬垫径向细分成多个室的弹性膜，每个室独立地选择抛光压力。晶片在抛光期间通过施加压力压靠在抛光垫上的保持环保持在适当的位置，抛光剂被引入晶片和抛光垫之间，抛光剂在位于边缘的腔室中施加在晶片上抛光头的晶片的区域和保持环的施加压力被选择为使得材料仅在晶片的边缘基本上被去除。

36. 发明申请

US20100327414A1 Method For Producing A Semiconductor Wafer 有权
标题翻译：生产半导体晶圆的方法
公开(公告)号：US20100327414A1
公开(公告)日：2010-12-30
申请号：US12778198
申请日：2010-05-12
申请人： Juergen Schwandner
发明人： Juergen Schwandner
IPC分类号： H01L29/30 , H01L21/306 , H01L21/20
CPC分类号： B24B37/042 , H01L21/02024
摘要： Semiconductor wafers are produced by a process of: a) providing a semiconductor wafer by cutting a silicon ingot into wafers; b) rounding the edge of the wafer, so that the wafer comprises plane surfaces on the frontside and backside and rounded oblique surfaces in the edge region; c) polishing the frontside and backside of the wafer, the frontside being polished by chemical-mechanical polishing using a polishing pad which is free of abrasive fixed in the polishing pad; backside polishing being carried out in three steps, using a polishing pad containing fixed abrasive which is pressed onto the backside of the wafer, a polishing agent free of solids introduced between the polishing pad and the backside of the wafer in the first step, a polishing agent containing abrasive being introduced in the second and third steps, a polishing pressure of 8-15 psi in the first and second steps being reduced to 0.5-5 psi in the third step.
摘要翻译：半导体晶片通过以下工艺生产：a）通过将硅锭切割成晶片来提供半导体晶片; b）使晶片的边缘四舍五入，使得晶片包括在边缘区域的前侧和后侧和圆形倾斜表面上的平面; c）抛光晶片的前侧和后侧，前侧通过化学机械抛光使用抛光垫抛光，抛光垫在研磨垫中不含磨料固定; 使用包含被压在晶片背面的固定磨料的抛光垫进行背面抛光，在第一步骤中抛光剂不含导入抛光垫和晶片背面之间的固体，抛光在第二步骤和第三步骤中引入含有研磨剂的试剂，在第三步骤中，第一步骤和第二步骤中8-15psi的研磨压力降低至0.5-5psi。

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