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    • 31. 发明授权
    • Active type display device
    • 主动式显示装置
    • US08143621B2
    • 2012-03-27
    • US11544088
    • 2006-10-06
    • Se-Il ChoChun-Gi You
    • Se-Il ChoChun-Gi You
    • H01L29/04
    • H01L27/124H01L27/1248H01L27/1288
    • The display device according to an exemplary embodiment of the present invention includes an insulation substrate, a first signal line formed on the insulation substrate, a second signal line intersecting and insulated from the first signal line, an covering member formed on the second signal line, and a switching element having a first terminal, a second terminal, and a third terminal, wherein the first terminal is connected to the first signal line and the second terminal is connected to the second signal line, and a pixel electrode is connected to the third terminal of the switching element. The covering member according to an embodiment of the present invention reduces the etching error in forming a fine pattern.
    • 根据本发明的示例性实施例的显示装置包括绝缘基板,形成在绝缘基板上的第一信号线,与第一信号线相交和绝缘的第二信号线,形成在第二信号线上的覆盖部件, 以及具有第一端子,第二端子和第三端子的开关元件,其中所述第一端子连接到所述第一信号线,并且所述第二端子连接到所述第二信号线,并且像素电极连接到所述第三端子 端子的开关元件。 根据本发明的实施例的覆盖部件减少了形成精细图案的蚀刻误差。
    • 34. 发明授权
    • Thin film transistor array panel and method for manufacturing the same
    • 薄膜晶体管阵列面板及其制造方法
    • US07799594B2
    • 2010-09-21
    • US12354130
    • 2009-01-15
    • Chun-Gi You
    • Chun-Gi You
    • H01L21/00
    • H01L27/1288H01L27/1255
    • A thin film transistor array panel includes a substrate; a first gate line disposed on the substrate and including a gate electrode; a storage electrode disposed in a layer which is the same layer as a layer of the first gate line; a gate insulating layer disposed on the first gate line and the storage electrode; a semiconductor disposed on the gate insulating layer and including a channel portion; a data line disposed on the semiconductor and including a source electrode; a drain electrode disposed on the semiconductor and facing the source electrode; a passivation layer disposed on the gate insulating layer, the data line, and the drain electrode, the passivation layer including a contact hole which exposes a portion of the drain electrode; and a pixel electrode disposed on the passivation layer and electrically connected to the drain electrode through the contact hole, wherein the gate insulating layer and the passivation layer are interposed between the pixel electrode and the substrate except for a region corresponding to the contact hole, and wherein the pixel electrode overlaps the storage electrode via the gate insulating layer and the passivation layer.
    • 薄膜晶体管阵列面板包括基板; 设置在所述基板上并包括栅电极的第一栅极线; 存储电极,设置在与所述第一栅极线的层相同的层中; 设置在第一栅极线和存储电极上的栅极绝缘层; 设置在所述栅极绝缘层上并包括沟道部分的半导体; 数据线,设置在所述半导体上并且包括源电极; 设置在所述半导体上并面向所述源电极的漏电极; 设置在所述栅绝缘层,所述数据线和所述漏电极上的钝化层,所述钝化层包括露出所述漏电极的一部分的接触孔; 以及设置在所述钝化层上并通过所述接触孔电连接到所述漏电极的像素电极,其中除了与所述接触孔对应的区域之外,所述栅极绝缘层和所述钝化层插入在所述像素电极和所述基板之间,以及 其中所述像素电极经由所述栅极绝缘层和所述钝化层与所述存储电极重叠。
    • 35. 发明申请
    • ORGANIC LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    • 有机发光装置及其制造方法
    • US20100156281A1
    • 2010-06-24
    • US12535635
    • 2009-08-04
    • Chun-Gi You
    • Chun-Gi You
    • H01J1/63H01L21/00
    • H01L51/5265H01L27/3211H01L27/322H01L27/3258H01L27/3276
    • An organic light emitting device including a pixel area displaying images and a peripheral area that is a peripheral portion of the pixel area is disclosed. A manufacturing method of an organic light emitting device includes: forming a switching element of the pixel area; forming a peripheral signal line in the peripheral area; forming a passivation layer on the switching element and the peripheral signal line; forming an overcoat and a remaining layer on the passivation layer; forming a transflective member and a thickness control layer on the overcoat; removing the remaining layer; forming a pixel electrode on the transflective member and the thickness control layer; forming an organic light emitting member on the pixel electrode; and forming a common electrode on the organic light emitting member. The remaining layer is maintained in the peripheral area such that the etchant is prevented from penetrating into the peripheral signal line, thereby preventing the corrosion of the peripheral signal line.
    • 公开了一种包括显示图像的像素区域和作为像素区域的周边部分的周边区域的有机发光装置。 有机发光器件的制造方法包括:形成像素区域的开关元件; 在周边区域形成外围信号线; 在开关元件和外围信号线上形成钝化层; 在钝化层上形成外涂层和剩余层; 在外涂层上形成半透反射构件和厚度控制层; 去除剩余的层; 在半透反射构件和厚度控制层上形成像素电极; 在像素电极上形成有机发光部件; 以及在有机发光部件上形成公共电极。 剩余的层保持在周边区域中,使得蚀刻剂不被穿透到外围信号线中,从而防止外围信号线的腐蚀。
    • 36. 发明授权
    • Thin film transistor panel and manufacturing method thereof
    • 薄膜晶体管面板及其制造方法
    • US07728331B2
    • 2010-06-01
    • US11856489
    • 2007-09-17
    • Bong-Ju KimChun-Gi You
    • Bong-Ju KimChun-Gi You
    • H01L29/04
    • H01L27/1251G02F1/13454G02F1/136286G02F2001/13629G02F2001/136295H01L27/124
    • A thin film transistor array panel including a substrate, a gate line and a gate-layer signal transmitting line of a gate driving circuit portion formed on the substrate, a gate insulating layer formed on the gate line and the gate-layer signal transmitting line and having a first contact hole exposing a portion of the gate-layer signal transmitting line, a semiconductor layer formed on the gate insulating layer, a data line including a source electrode, and a drain electrode formed on the gate insulating layer and the semiconductor layer, a data-layer signal transmitting line of the gate driving circuit portion formed on the gate insulating layer and connected to the gate-layer signal transmitting line through the first contact hole, a pixel electrode connected to the drain electrode, and a passivation layer formed on the data line, the drain electrode, and the data-layer signal transmitting line of the driving circuit portion. The data line, the drain electrode, and the data-layer signal transmitting line have a triple-layered structure including a lower layer, an intermediate layer, and an upper layer. The lower layer is made of a same layer as the pixel electrode.
    • 一种薄膜晶体管阵列面板,包括形成在基板上的栅极驱动电路部分的基板,栅极线和栅极层信号传输线,形成在栅极线和栅极层信号传输线上的栅极绝缘层,以及 具有暴露栅极层信号传输线的一部分的第一接触孔,形成在栅极绝缘层上的半导体层,形成在栅极绝缘层和半导体层上的源电极和漏电极的数据线, 栅极驱动电路部分的数据层信号传输线,形成在栅极绝缘层上并通过第一接触孔连接到栅极层信号传输线,连接到漏极的像素电极和形成在漏电极上的钝化层 数据线,漏电极和数据层信号传输线。 数据线,漏电极和数据层信号传输线具有包括下层,中间层和上层的三层结构。 下层由与像素电极相同的层制成。