会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 31. 发明申请
    • Air conditioner and method for controlling the same
    • 空调及其控制方法
    • US20060123839A1
    • 2006-06-15
    • US11155468
    • 2005-06-20
    • Yoon HwangChan SongJeong ParkJi Jang
    • Yoon HwangChan SongJeong ParkJi Jang
    • F25B1/00F25B1/10
    • F25B41/04F25B2400/075F25B2500/27F25B2600/0261
    • An air conditioner and a method for controlling the same are disclosed herein. The air conditioner has a capillary tube equipped to a connecting tube which connects a suction pipe and a discharge pipe of a compressor and has an opening/closing valve equipped therein, thereby allowing pressure equilibrium between the suction pipe and the discharge pipe of a compressor to be maintained when the compressor stops operating, and allowing a discharge flux of the compressor to be appropriately controlled when a load is lower than a capacity of the controller under operation. As a result, the air conditioner does not require a separate bypass unit, thereby simplifying the construction of the air conditioner while minimizing the installation space thereof through omission of a separate bypass unit, leading to reduction in costs.
    • 本文公开了一种空调及其控制方法。 空气调节器具有连接管的连接管的毛细管,该连接管连接有压缩机的吸入管和排出管,并具有配置在其内的开闭阀,从而使得吸入管与压缩机的排出管之间的压力平衡 当压缩机停止运行时,保持压缩机的排放通量,并且当负载低于运行中的控制器的容量时,适当地控制压缩机的排出通量。 结果,空调器不需要单独的旁路单元,从而通过省略单独的旁路单元来简化空调的结构,同时最小化其安装空间,从而降低成本。
    • 32. 发明申请
    • Air conditioner
    • 冷气机
    • US20060123834A1
    • 2006-06-15
    • US11155466
    • 2005-06-20
    • Yoon HwangChan SongJeong ParkJi Jang
    • Yoon HwangChan SongJeong ParkJi Jang
    • F25B43/02F25B1/10
    • F25B13/00F25B31/004F25B2400/075
    • Disclosed herein is an air conditioner having a single oil separator mounted on a confluent discharging channel, to which are connected discharging channels provided at a plurality of compressors, and an electronic expansion valve, of which the opening level is controllable, mounted on an oil collection pipe connected to the oil separator. As a result, the number of the oil separators is decreased. Consequently, the present invention has the effect of simplifying the structure of the air conditioner and reducing the manufacturing costs of the air conditioner. Furthermore, refrigerant is bypassed by controlling the opening level of the electronic expansion valve to control the flow rate of the refrigerant. Consequently, the present invention has the effect of eliminating an additional bypassing device, and therefore, simplifying the structure of the air conditioner and the controlling method of the air conditioner.
    • 这里公开了一种空调机,其具有安装在汇合排放通道上的单个油分离器,连接在多个压缩机上的排放通道,以及电子膨胀阀,其开口水平可控制,安装在油收集器上 管道连接到油分离器。 结果,油分离器的数量减少。 因此,本发明具有简化空调的结构并降低空调的制造成本的效果。 此外,通过控制电子膨胀阀的开度来控制制冷剂的流量来旁路制冷剂。 因此,本发明具有消除额外的旁路装置的效果,因此简化了空调的结构和空调的控制方法。
    • 34. 发明申请
    • Methods of fabricating MIM capacitors of semiconductor devices
    • 制造半导体器件的MIM电容器的方法
    • US20050170583A1
    • 2005-08-04
    • US11027312
    • 2004-12-30
    • Jeong Park
    • Jeong Park
    • H01L27/108H01L21/02H01L21/768H01L21/8242H01L23/522H01L21/20H01L21/8234H01L21/8244
    • H01L21/76808H01L21/76802H01L23/5223H01L27/1085H01L27/10897H01L28/91H01L2924/0002H01L2924/00
    • Methods of fabricating a MIM capacitor and a dual damascene structure of a semiconductor device are disclosed. A disclosed method comprises forming a first conducting material as a lower interconnect on a semiconductor substrate; sequentially depositing second and third insulating layers over the first conducting layer; performing a first damascene process to form via holes and a trench within the second and the third insulating layers; filling the via holes and the trench to form a first contact plug connected to a lower interconnect and a second contact plug to contact the lower electrode of a MIM capacitor; forming the MIM capacitor over the second contact plug; sequentially depositing fourth and fifth insulating layers over the entire surface of the resulting structure; performing a second damascene process to form a via hole and a trench within the fourth and the fifth insulating layers; and filling the via hole and the trench to form a contact plug in contact with the upper electrode of the capacitor and another contact plug connected to the lower metal interconnect.
    • 公开了制造半导体器件的MIM电容器和双镶嵌结构的方法。 所公开的方法包括在半导体衬底上形成作为下互连的第一导电材料; 在第一导电层上依次沉积第二和第三绝缘层; 执行第一镶嵌工艺以在第二和第三绝缘层内形成通孔和沟槽; 填充通孔和沟槽以形成连接到下互连的第一接触插塞和与MIM电容器的下电极接触的第二接触插塞; 在所述第二接触插塞上形成所述MIM电容器; 在所得结构的整个表面上依次沉积第四和第五绝缘层; 执行第二镶嵌工艺以在第四绝缘层和第五绝缘层内形成通孔和沟槽; 并且填充通孔和沟槽以形成与电容器的上电极接触的接触插塞和连接到下金属互连的另一接触插塞。
    • 35. 发明申请
    • Semiconductor devices having dual spacers and methods of fabricating the same
    • 具有双重间隔物的半导体器件及其制造方法
    • US20050087802A1
    • 2005-04-28
    • US10971984
    • 2004-10-22
    • Jeong Park
    • Jeong Park
    • H01L21/28H01L21/336H01L21/8234H01L29/423H01L29/78H01L29/94
    • H01L29/66492H01L21/28114H01L29/42376H01L29/66553H01L29/6656H01L29/6659H01L29/7833
    • Semiconductor devices and methods of making the same are disclosed. According to one example, a semiconductor device having dual spacer may include a semiconductor substrate, a gate oxide film and a gate poly provided in a device region of the semiconductor substrate, a halo/pocket implant region formed in a region of the semiconductor substrate by which the gate poly is defined, and an inner spacer formed at a side wall of the gate poly for defining the width of a lower portion of the gate poly. The semiconductor device may also include an outer spacer formed at the side wall of the gate poly for defining the width of an upper portion of the gate poly, source/drain regions provided on the semiconductor substrate under the gate oxide film, and a salicide film provided on surfaces of the gate poly and the source/drain region.
    • 公开了半导体器件及其制造方法。 根据一个示例,具有双重间隔物的半导体器件可以包括设置在半导体衬底的器件区域中的半导体衬底,栅极氧化物膜和栅极聚合物,在半导体衬底的区域中形成的卤素/ 其中限定了门聚合物,以及形成在栅极聚酰胺的侧壁处的内部间隔物,用于限定栅极聚合物的下部的宽度。 半导体器件还可以包括形成在栅极多晶硅的侧壁处的外部间隔物,用于限定设置在栅极氧化膜下的半导体衬底上的栅极多晶硅源极/漏极区域的上部的宽度,以及自对准硅膜 设置在栅极多晶硅和源极/漏极区域的表面上。
    • 36. 发明申请
    • Transistor of semiconductor device and method for manufacturing the same
    • 半导体器件的晶体管及其制造方法
    • US20070114581A1
    • 2007-05-24
    • US11599646
    • 2006-11-14
    • Jeong Park
    • Jeong Park
    • H01L29/76
    • H01L29/1037
    • A transistor of a semiconductor device capable of improving the device reliability, and a method for manufacturing the same are provided. The transistor includes an active portion having a first height from a semiconductor substrate surface and having a line-shaped cross-section; a device isolation layer in which a round portion at a second height lower than the first height from the semiconductor substrate surface; a gate insulating layer on the active portion; a gate electrode on the gate insulating layer intersecting the active portion; and source/drain terminals in the active region on opposite sides of the gate electrode.
    • 提供了能够提高器件可靠性的半导体器件的晶体管及其制造方法。 晶体管包括具有从半导体衬底表面的第一高度并具有线状横截面的有源部分; 器件隔离层,其中在距离半导体衬底表面低于第一高度的第二高度处的圆形部分; 有源部分上的栅极绝缘层; 所述栅极绝缘层上的与所述有源部分交叉的栅电极; 以及在栅电极的相对侧的有源区中的源极/漏极端子。
    • 39. 发明申请
    • Zirconium based alloys having excellent creep resistance
    • 锆基合金具有优异的耐蠕变性
    • US20060177341A1
    • 2006-08-10
    • US11097726
    • 2005-03-31
    • Yong JeongJong BaekByoung ChoiSang ParkMyung LeeJe BangJeong ParkJun KimHyun KimYoun Jung
    • Yong JeongJong BaekByoung ChoiSang ParkMyung LeeJe BangJeong ParkJun KimHyun KimYoun Jung
    • C22C16/00
    • C22C16/00C22F1/186
    • The present invention relates to a zirconium based alloy composite having an excellent creep resistance and, more particularly, to a zirconium based alloy composite finally heat-treated to have the degree of recrystallization in the range of 40˜70% in order to improve the creep resistance. The zirconium based alloy comprises 0.8˜1.8 wt. % niobium (Nb); 0.38˜0.50 wt. % tin (Sn); one or more elements selected from 0.1˜0.2 wt. % iron (Fe), 0.05˜0.15 wt. % copper (Cu), and 0.12 wt. % chromium (Cr); 0.10˜0.15 wt. % oxygen (O); 0.006˜0.010 wt. % carbon (C); 0.006˜0.010 wt. % silicon (Si); 0.0005˜0.0020 wt. % sulfur (S); and the balance zirconium (Zr). The zirconium alloy manufactured with the composition in accordance with the present invention has an excellent creep resistance compared to a conventional Zircaloy-4, and may effectively be used as a nuclear cladding tube, supporting lattice and inner structures of reactor core in the nuclear power plant utilizing light or heavy water reactor.
    • 本发明涉及具有优异抗蠕变性的锆基合金复合材料,更具体地说,涉及一种锆基合金复合材料,其最终被热处理以具有在40〜70%范围内的重结晶度,以改善蠕变 抵抗性。 锆基合金包含0.8〜1.8wt。 %铌(Nb); 0.38〜0.50重量% 锡(Sn); 一种或多种选自0.1〜0.2wt。 %铁(Fe),0.05〜0.15wt。 %铜(Cu)和0.12重量% %铬(Cr); 0.10〜0.15wt。 %氧(O); 0.006〜0.010重量% %碳(C); 0.006〜0.010重量% %硅(Si); 0.0005〜0.0020重量 %硫(S); 余量为锆(Zr)。 按照本发明的组合物制造的锆合金与常规的Zircaloy-4相比具有优异的抗蠕变性,并且可以有效地用作核包层管,在核电站中支撑晶格和反应堆芯的内部结构 利用轻水或重水反应堆。
    • 40. 发明申请
    • Slipper having low frequency generator
    • 拖鞋具有低频发生器
    • US20050288610A1
    • 2005-12-29
    • US11158841
    • 2005-06-22
    • Jeong Park
    • Jeong Park
    • A43B3/10A61H39/00A61N1/32A61N1/36A61H1/00
    • A43B7/146A43B3/0005A61H39/002A61N1/32A61N1/326
    • A slipper having a low frequency generation unit comprised a low frequency generator which is installed at a slipper back part of a slipper for thereby generating a certain low frequency for stimulating human body in accordance with a control signal externally inputted from a receiver, and a conductive low frequency seat which is installed at a slipper bottom part of the slipper for stimulating with low frequencies a foot bottom surface of a slipper user based on a low frequency signal transferred through a power cable electrically connected with the low frequency generator. With the above constructions, it is possible to enhance and activate the functions of intestines based on the stimulation of an acupuncture point distributed on the sole of a foot by pressurizing a corresponding nervous system of a foot bottom surface of a slipper user using a low frequency stimulation from the low frequency generator installed at a slipper back part or a slipper bottom part.
    • 具有低频发生单元的拖鞋包括安装在拖鞋的拖鞋背部的低频发生器,从而根据从接收器外部输入的控制信号产生用于刺激人体的一定的低频,以及导电 低频座椅,其安装在拖鞋的拖鞋底部,用于基于通过与低频发生器电连接的电力电缆传送的低频信号,低频地刺激拖鞋用户的脚底表面。 利用上述结构,可以通过使用低频率对拖鞋用户的脚底表面的相应神经系统进行加压,从而增强和激活肠的功能,所述功能基于分布在脚底上的针刺点的刺激 来自安装在拖鞋背部或拖鞋底部的低频发生器的刺激。