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    • 32. 发明授权
    • Method for storing information in a semiconductor device
    • 用于在半导体器件中存储信息的结构和方法
    • US06190972B1
    • 2001-02-20
    • US08946027
    • 1997-10-07
    • Hua ZhengMichael ShoreJeffrey P. WrightTodd A. Merritt
    • Hua ZhengMichael ShoreJeffrey P. WrightTodd A. Merritt
    • H01L218246
    • G01R31/3181G11C17/10H01L27/112
    • A semiconductor device includes a plurality of conductive layers that are formed on the substrate. Two electrically intercoupled sections of a read-only storage element, such as a fuse element, which together compose the storage element, are each formed in a different one of the conductive layers. The storage element has a storage state, and each section has a conductivity. One can change the storage state of the storage element by changing the conductivity of one of the sections. Additionally, multiple storage elements may be coupled in parallel to form a storage module. Each of the storage elements of the storage module may include multiple storage sections that are each formed in a different conductive layer. The storage elements may store the version number of the mask set used to form the semiconductor device. Alternatively, a conductive layer is formed on a substrate, and one or more read-only storage elements are formed in the conductive layer. Each of the storage elements is formed in a predetermined state such that they collectively store a digital value that identifies a mask used to form the conductive layer.
    • 半导体器件包括形成在衬底上的多个导电层。 共同组成存储元件的只读存储元件(例如熔丝元件)的两个电互相耦合部分分别形成在不同的一个导电层中。 存储元件具有存储状态,并且每个部分具有导电性。 可以通过改变其中一个部分的电导率来改变存储元件的存储状态。 另外,多个存储元件可以并联耦合以形成存储模块。 存储模块的每个存储元件可以包括各自形成在不同导电层中的多个存储部分。 存储元件可以存储用于形成半导体器件的掩模集的版本号。 或者,在衬底上形成导电层,并且在导电层中形成一个或多个只读存储元件。 每个存储元件形成为预定状态,使得它们共同地存储识别用于形成导电层的掩模的数字值。