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    • 31. 发明授权
    • MOS varactor and fabricating method of the same
    • MOS变容二极管及其制造方法相同
    • US07989868B2
    • 2011-08-02
    • US12565197
    • 2009-09-23
    • Jae-Sung RiehYong Ho OhSue Yeon KimSeung Yong Lee
    • Jae-Sung RiehYong Ho OhSue Yeon KimSeung Yong Lee
    • H01L21/00
    • H01L29/93H01L29/66174
    • A MOS varactor for use in circuits and elements of a millimeter-wave frequency band, which is capable of reducing series resistance and enhancing a Q-factor by using a plurality of island-like gates seated in a well region of a substrate and gate contacts directly over the gates, includes: gate insulating layers arranged at equal intervals in the form of a (n×m) matrix, and a gate electrode placed on the gate insulating layers in a well region of a substrate; a gate contact which contacts the gate electrode; a first metal wire, which is electrically connected to the gate contact; source/drain contacts arranged at equal intervals in a matrix to form apexes of a square centered at the gate electrode and contact a doping region except for the bottom of the gate insulating layers; and a second metal wire, which is electrically connected to the source/drain contacts.
    • 一种用于毫米波频带的电路和元件的MOS变容二极管,其能够通过使用位于衬底的阱区域中的多个岛状栅极和栅极触点来降低串联电阻并增强Q因子 包括:以(n×m)矩阵形式等间隔布置的栅极绝缘层,以及设置在衬底的阱区中的栅极绝缘层上的栅电极; 接触栅电极的栅极接触; 电连接到栅极触点的第一金属线; 源极/漏极触点以等间隔布置在矩阵中以形成以栅电极为中心的正方形的顶点,并且接触除了栅极绝缘层的底部之外的掺杂区域; 以及电连接到源极/漏极触点的第二金属线。
    • 35. 发明申请
    • NITROGEN GAS INJECTION APPARATUS
    • 氮气喷射装置
    • US20110220023A1
    • 2011-09-15
    • US13129728
    • 2010-08-03
    • Seung Yong Lee
    • Seung Yong Lee
    • C23C16/00
    • H01L21/67017F16L23/006
    • The present invention relates to a nitrogen gas injection apparatus for semiconductor fabrication equipment or LCD fabrication equipment, which can be simply manufactured and which thus reduces manufacturing costs, and which enables a nitrogen gas injection direction to correspond to the flow direction of reaction by-products, to thereby inject nitrogen gas in an effective manner without disturbing the flow of reaction by-products. The nitrogen gas injection apparatus comprises: a pair of flanged pipes having flanges; a ring-shaped injection nozzle coupled along the inner wall of one of the flanged pipes coupled together, to supply nitrogen gas into the flanged pipes; and a nitrogen supply line connected to the injection nozzle to supply nitrogen gas. The interior of the injection nozzle has a hole to enable the nitrogen gas supplied in a circumferential direction to flow, and a plurality of injection holes communicating with the hole to inject the supplied nitrogen gas into the flanged pipes. The injection holes are formed at the position protruding from the inner surface of one of the flanged pipes to inject nitrogen gas in the flow direction of reaction by-products.
    • 本发明涉及一种用于半导体制造设备或LCD制造设备的氮气注入装置,其可以简单地制造并且因此降低制造成本,并且能够使氮气注入方向对应于反应副产物的流动方向 从而有效地注入氮气,而不会干扰反应副产物的流动。 氮气注入装置包括:一对具有凸缘的凸缘管; 一个连接在一起的法兰管的内壁上的环形喷嘴,将氮气供入法兰管中; 和连接到喷嘴的供氮管供给氮气。 注射喷嘴的内部具有使圆周方向供给的氮气流动的孔,以及与该孔连通的多个喷射孔,将供给的氮气注入到凸缘管内。 注射孔形成在从一个法兰管的内表面突出的位置,以在反应副产物的流动方向上注入氮气。