专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US07304383B2 TFT substrate for liquid crystal display apparatus and method of manufacturing the same 失效
标题翻译：液晶显示装置用TFT基板及其制造方法
公开(公告)号：US07304383B2
公开(公告)日：2007-12-04
申请号：US10535304
申请日：2003-10-27
申请人： Beom-Seok Cho , Chang-Oh Jeong
发明人： Beom-Seok Cho , Chang-Oh Jeong
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L29/4908 , C22C9/00 , G02F1/133345 , G02F1/136286 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： There are provided a TFT substrate for an LCD apparatus and a method of manufacturing the same. A substrate (10), a diffusion barrier layer (11) and a copper alloy layer (12) are formed on the TFT substrate, consecutively. The copper alloy includes a material from about 0.5 at % to about 15 at % to form a gate wiring layer. The material is used to form the diffusion barrier layer (11). A compound that comprises a material such as Zr, Ti, Hf, V, Ta, Ni, Cr, Nb, Co, Mn, Mo, W, Rh, Pd, Pt, etc. is deposited on the diffusion barrier layer (11) to a thickness from about 50 Å to about 5,000 Å. The deposited compound is then heat treated to convert the deposited compound into a silicide compound (11b). The transistor substrate has low resistance and high conductance. Also, etching process is simplified, and a mutual diffusion is prevented by means of the thin diffusion barrier layer.
摘要翻译：提供了一种用于LCD装置的TFT基板及其制造方法。连续地在TFT基板上形成基板（10），扩散阻挡层（11）和铜合金层（12）。铜合金包括约0.5at％至约15at％的材料以形成栅极布线层。该材料用于形成扩散阻挡层（11）。包含诸如Zr，Ti，Hf，V，Ta，Ni，Cr，Nb，Co，Mn，Mo，W，Rh，Pd，Pt等材料的化合物沉积在扩散阻挡层（11）上，至约50至约5000的厚度。然后将沉积的化合物进行热处理以将沉积的化合物转化为硅化物（11b）。晶体管衬底具有低电阻和高电导率。此外，简化了蚀刻工艺，并且通过薄的扩散阻挡层来防止相互扩散。

32. 发明申请

US20060163582A1 Thin film transistor substrate and method for forming metal wire thereof 有权
标题翻译：薄膜晶体管基板及其金属线形成方法
公开(公告)号：US20060163582A1
公开(公告)日：2006-07-27
申请号：US10539223
申请日：2003-03-26
申请人： Jae-Gab Lee , Chang-Oh Jeong , Myung-Mo Sung , Hee-Jung Yang , Beom-Seok Cho
发明人： Jae-Gab Lee , Chang-Oh Jeong , Myung-Mo Sung , Hee-Jung Yang , Beom-Seok Cho
IPC分类号： H01L29/76
CPC分类号： H01L29/78603 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/4908 , H01L2224/32245
摘要： The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring method thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.
摘要翻译：薄膜晶体管基板及其金属布线方法技术领域本发明涉及薄膜晶体管基板及其金属布线方法，更具体地涉及在基板和金属布线之间包括自组装单层的薄膜晶体管基板及其金属布线方法。由于本发明的薄膜晶体管基板在Si表面和金属布线之间包含三维交联的自组装单层，因此具有良好的粘附能力和抗扩散能力。

33. 发明申请

US20060151788A1 Tft substrate for liquid crystal display apparatus and method of manufacturing the same 失效
标题翻译：用于液晶显示装置的Tft基板及其制造方法
公开(公告)号：US20060151788A1
公开(公告)日：2006-07-13
申请号：US10535304
申请日：2003-10-27
申请人： Beom-Seok Cho , Chang-Oh Jeong
发明人： Beom-Seok Cho , Chang-Oh Jeong
IPC分类号： H01L29/04
CPC分类号： H01L29/4908 , C22C9/00 , G02F1/133345 , G02F1/136286 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： There are provided a TFT substrate for an LCD apparatus and a method of manufacturing the same. A substrate (10), a diffusion barrier layer (11) and a copper alloy layer (12) are formed on the TFT substrate, consecutively. The copper alloy includes a material from about 0.5 at % to about 15 at % to form a gate wiring layer. The material is used to form the diffusion barrier layer (11). A compound that comprises a material such as Zr, Ti, Hf, V, Ta, Ni, Cr, Nb, Co, Mn, Mo, W, Rh, Pd, Pt, etc. is deposited on the diffusion barrier layer (11) to a thickness from about 50 Å to about 5,000 Å. The deposited compound is then heat treated to convert the deposited compound into a silicide compound (11b). The transistor substrate has low resistance and high conductance. Also, etching process is simplified, and a mutual diffusion is prevented by means of the thin diffusion barrier layer.
摘要翻译：提供了一种用于LCD装置的TFT基板及其制造方法。连续地在TFT基板上形成基板（10），扩散阻挡层（11）和铜合金层（12）。铜合金包括约0.5at％至约15at％的材料以形成栅极布线层。该材料用于形成扩散阻挡层（11）。包含诸如Zr，Ti，Hf，V，Ta，Ni，Cr，Nb，Co，Mn，Mo，W，Rh，Pd，Pt等材料的化合物沉积在扩散阻挡层（11）上，至约50至约5000的厚度。然后将沉积的化合物进行热处理以将沉积的化合物转化为硅化物（11b）。晶体管衬底具有低电阻和高电导率。此外，简化了蚀刻工艺，并且通过薄的扩散阻挡层来防止相互扩散。

34. 发明申请

US20050242401A1 Wire structure, a thin film transistor substrate of using the wire structure and a method of manufacturing the same 失效
标题翻译：线结构，使用线结构的薄膜晶体管基板及其制造方法
公开(公告)号：US20050242401A1
公开(公告)日：2005-11-03
申请号：US11170251
申请日：2005-06-29
申请人： Beom-Seok Cho , Chang-Oh Jeong
发明人： Beom-Seok Cho , Chang-Oh Jeong
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L21/768 , H01L29/786 , H01L51/50 , H05B33/12 , H01L29/76
CPC分类号： G02F1/136227 , G02F1/136213 , G02F2001/13629
摘要： A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wire having source electrodes, drain electrodes and data lines is formed on the gate insulating layer and the semiconductor pattern. A protective layer is formed on the data wire. Pixel electrodes connected to the drain electrode via contact holes are formed on the protective layer. The gate wire and the data wire include triple layers of an adhesion layer, a Ag containing layer and a protection layer. The adhesion layer includes one of Cr, Cr alloy, Ti, Ti alloy, Mo, Mo alloy, Ta and Ta alloy, the Ag containing layer includes Ag or Ag alloy, and the protection layer includes one of IZO, Mo, Mo alloy, Cr and Cr alloy.
摘要翻译：薄膜晶体管阵列面板包括绝缘基板，形成在绝缘基板上的栅极线。栅极绝缘层覆盖栅极线。在栅极绝缘层上形成半导体图形。在栅极绝缘层和半导体图案上形成具有源电极，漏电极和数据线的数据线。在数据线上形成保护层。在保护层上形成通过接触孔与漏电极连接的像素电极。栅极线和数据线包括粘合层，含Ag层和保护层的三层。粘合层包括Cr，Cr合金，Ti，Ti合金，Mo，Mo合金，Ta和Ta合金中的一种，含Ag层包括Ag或Ag合金，保护层包括IZO，Mo，Mo合金， Cr和Cr合金。

35. 发明授权

US06716660B2 Method for fabricating a wiring line assembly for a thin film transistor array panel substrate 失效
标题翻译：一种用于制造薄膜晶体管阵列面板基板的布线组件的方法
公开(公告)号：US06716660B2
公开(公告)日：2004-04-06
申请号：US10247727
申请日：2002-09-20
申请人： Chang-Oh Jeong , Jae-Gab Lee , Beom-Seok Cho
发明人： Chang-Oh Jeong , Jae-Gab Lee , Beom-Seok Cho
IPC分类号： H01L2100
CPC分类号： H01L27/124 , G02F1/136286 , H01L23/53242 , H01L23/53247 , H01L27/12 , H01L2924/0002 , H01L2924/00
摘要： According to one aspect of the present invention, the thin film transistor array substrate basically includes a gate line assembly based on an Ag alloy. The Ag alloy comprises Ag and at least one of alloy elements and the alloy elements each bearing a low melting point. The gate line assembly comprises a gate electrode and a gate line. A data line assembly crosses over the gate line assembly while being insulated from the gate line assembly. The data line assembly comprises a source electrode, a drain electrode and a data line. A semiconductor layer contacts the source electrode and the drain electrode. The semiconductor layer forms a thin film transistor together with the gate electrode, the source electrode and the drain electrode. A pixel electrode is connected to the drain electrode.
摘要翻译：根据本发明的一个方面，薄膜晶体管阵列基板基本上包括基于Ag合金的栅极线组件。 Ag合金包含Ag和至少一种合金元素和各自具有低熔点的合金元素。栅极线组件包括栅电极和栅极线。数据线组件在与栅极线组件绝缘的同时跨过栅极线组件。数据线组件包括源电极，漏电极和数据线。半导体层接触源电极和漏电极。半导体层与栅电极，源电极和漏电极一起形成薄膜晶体管。像素电极连接到漏电极。

36. 发明授权

US07713798B2 Thin film transistor substrate having nickel-silicide layer 失效
标题翻译：具有硅化镍层的薄膜晶体管基板
公开(公告)号：US07713798B2
公开(公告)日：2010-05-11
申请号：US12338671
申请日：2008-12-18
申请人： Chang-Oh Jeong , Beom-Seok Cho , Hee-Hwan Choe
发明人： Chang-Oh Jeong , Beom-Seok Cho , Hee-Hwan Choe
IPC分类号： H01L21/00
CPC分类号： H01L29/78669 , G02F1/136286 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/456 , H01L29/4908
摘要： Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-silicide layer. Nickel is coated on the insulating layer pattern including silicon and a metal material is coated on the nickel-coated layer. After that, a heat treatment is performed at about 200 to about 350° C. to obtain the nickel-silicide layer. Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring, a device having low resistivity and good ohmic contact property can be obtained.
摘要翻译：公开了一种LCD装置的薄膜晶体管基板及其制造方法。薄膜晶体管基板包括形成在包括硅和在硅化镍层上形成的金属层的绝缘层图案上的硅化镍层。将镍涂覆在包括硅的绝缘层图案上，并将金属材料涂覆在镀镍层上。之后，在约200〜约350℃进行热处理，得到硅化镍层。由于通过施加硅化镍布线来制造LCD器件的薄膜晶体管衬底，因此可以获得具有低电阻率和良好的欧姆接触特性的器件。

37. 发明申请

US20090212298A1 Thin Film Transistor Substrate Having Nickel-Silicide Layer 失效
标题翻译：具有镍 - 硅化物层的薄膜晶体管基板
公开(公告)号：US20090212298A1
公开(公告)日：2009-08-27
申请号：US12338671
申请日：2008-12-18
申请人： Chang-Oh Jeong , Beom-Seok Cho , Hee-Hwan Choe
发明人： Chang-Oh Jeong , Beom-Seok Cho , Hee-Hwan Choe
IPC分类号： H01L29/786 , H01L33/00 , H01L21/336
CPC分类号： H01L29/78669 , G02F1/136286 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/456 , H01L29/4908
摘要： Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-silicide layer. Nickel is coated on the insulating layer pattern including silicon and a metal material is coated on the nickel-coated layer. After that, a heat treatment is performed at about 200 to about 350° C. to obtain the nickel-silicide layer. Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring, a device having low resistivity and good ohmic contact property can be obtained.
摘要翻译：公开了一种LCD装置的薄膜晶体管基板及其制造方法。薄膜晶体管基板包括形成在包括硅和在硅化镍层上形成的金属层的绝缘层图案上的硅化镍层。将镍涂覆在包括硅的绝缘层图案上，并将金属材料涂覆在镀镍层上。之后，在约200〜约350℃进行热处理，得到硅化镍层。由于通过施加硅化镍布线来制造LCD器件的薄膜晶体管衬底，因此可以获得具有低电阻率和良好的欧姆接触特性的器件。

38. 发明申请

US20070187690A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FORMING METAL WIRE THEREOF 审中-公开
标题翻译：薄膜晶体管基板及形成金属线的方法
公开(公告)号：US20070187690A1
公开(公告)日：2007-08-16
申请号：US11691455
申请日：2007-03-26
申请人： Jae-Gab Lee , Chang-Oh Jeong , Myung-Mo Sung , Hee-Jung Yang , Beom-Seok Cho
发明人： Jae-Gab Lee , Chang-Oh Jeong , Myung-Mo Sung , Hee-Jung Yang , Beom-Seok Cho
IPC分类号： H01L29/04
CPC分类号： H01L29/78603 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/4908 , H01L2224/32245
摘要： The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.
摘要翻译：薄膜晶体管基板及其金属布线方法技术领域本发明涉及薄膜晶体管基板及其金属布线方法，更具体地涉及在基板和金属布线之间包括自组装单层的薄膜晶体管基板及其金属布线。由于本发明的薄膜晶体管基板在Si表面和金属布线之间包含三维交联的自组装单层，因此具有良好的粘附能力和抗扩散能力。

39. 发明授权

US06486514B2 Wiring line assembly for thin film transistor array substrate and a method for fabricating the same 失效
公开(公告)号：US06486514B2
公开(公告)日：2002-11-26
申请号：US09917689
申请日：2001-07-31
申请人： Chang-Oh Jeong , Jae-Gab Lee , Beom-Seok Cho
发明人： Chang-Oh Jeong , Jae-Gab Lee , Beom-Seok Cho
IPC分类号： H01L2701
CPC分类号： H01L27/124 , G02F1/136286 , H01L23/53242 , H01L23/53247 , H01L27/12 , H01L2924/0002 , H01L2924/00
摘要： According to one aspect of the present invention, the thin film transistor array substrate basically includes a gate line assembly based on an Ag alloy. The Ag alloy comprises Ag and at least one of alloy elements and the alloy elements each bearing a low melting point. The gate line assembly comprises a gate electrode and a gate line. A data line assembly crosses over the gate line assembly while being insulated from the gate line assembly. The data line assembly comprises a source electrode, a drain electrode and a data line. A semiconductor layer contacts the source electrode and the drain electrode. The semiconductor layer forms a thin film transistor together with the gate electrode, the source electrode and the drain electrode. A pixel electrode is connected to the drain electrode.

40. 发明申请

US20060145255A1 Thin film transistor substrate 失效
公开(公告)号：US20060145255A1
公开(公告)日：2006-07-06
申请号：US10548562
申请日：2004-02-28
申请人： Chang-Oh Jeong , Beom-Seok Cho , Hee-Hwan Choe
发明人： Chang-Oh Jeong , Beom-Seok Cho , Hee-Hwan Choe
IPC分类号： H01L21/84
CPC分类号： H01L29/78669 , G02F1/136286 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/456 , H01L29/4908
摘要： Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-silicide layer. Nickel is coated on the insulating layer pattern including silicon and a metal material is coated on the nickel-coated layer. After that, a heat treatment is performed at about 200 to about 350° C. to obtain the nickel-silicide layer. Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring, a device having low resistivity and good ohmic contact property can be obtained.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式