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    • 38. 发明授权
    • Capacitive MEMS device with programmable offset voltage control
    • 具有可编程失调电压控制的电容式MEMS器件
    • US07978395B2
    • 2011-07-12
    • US12789195
    • 2010-05-27
    • Daniel FelnhoferEvgeni Gousev
    • Daniel FelnhoferEvgeni Gousev
    • G02B26/00G02B26/02
    • B81B3/0086B81B2201/045G02B26/001G11C23/00
    • A capacitive MEMS device is formed having a material between electrodes that traps and retains charges. The material can be realized in several configurations. It can be a multilayer dielectric stack with regions of different band gap energies or band energy levels. The dielectric materials can be trappy itself, i.e. when defects or trap sites are pre-fabricated in the material. Another configuration involves a thin layer of a conductive material with the energy level in the forbidden gap of the dielectric layer. The device may be programmed (i.e. offset and threshold voltages pre-set) by a method making advantageous use of charge storage in the material, wherein the interferometric modulator is pre-charged in such a way that the hysteresis curve shifts, and the actuation voltage threshold of the modulator is significantly lowered. During programming phase, charge transfer between the electrodes and the materials can be performed by applying voltage to the electrodes (i.e. applying electrical field across the material) or by UV-illumination and injection of electrical charges over the energy barrier. The interferometric modulator may then be retained in an actuated state with a significantly lower actuation voltage, thereby saving power.
    • 形成电容MEMS器件,其具有陷阱并保持电荷的电极之间的材料。 该材料可以在几种配置中实现。 它可以是具有不同带隙能量或带能级的区域的多层电介质叠层。 电介质材料本身可以是歪斜的,即当在材料中预先制造缺陷或捕获位置时。 另一种结构涉及导电材料的薄层,其中电介质层的禁止间隙具有能级。 可以通过有利地使用材料中的电荷存储的方法来对器件进行编程(即,偏移和阈值电压预设),其中干涉式调制器以滞后曲线偏移的方式预充电,并且致动电压 调制器的阈值显着降低。 在编程阶段期间,电极和材料之间的电荷转移可以通过向电极施加电压(即跨越材料施加电场)或通过UV照射和在能量屏障上注入电荷来执行。 然后干涉式调制器可以以明显更低的致动电压保持在致动状态,从而节省功率。
    • 40. 发明申请
    • CAPACITIVE MEMS DEVICE WITH PROGRAMMABLE OFFSET VOLTAGE CONTROL
    • 具有可编程偏移电压控制的电容式MEMS器件
    • US20100238537A1
    • 2010-09-23
    • US12789195
    • 2010-05-27
    • Daniel FelnhoferEvgeni Gousev
    • Daniel FelnhoferEvgeni Gousev
    • G02B26/00C23C14/22
    • B81B3/0086B81B2201/045G02B26/001G11C23/00
    • A capacitive MEMS device is formed having a material between electrodes that traps and retains charges. The material can be realized in several configurations. It can be a multilayer dielectric stack with regions of different band gap energies or band energy levels. The dielectric materials can be trappy itself, i.e. when defects or trap sites are pre-fabricated in the material. Another configuration involves a thin layer of a conductive material with the energy level in the forbidden gap of the dielectric layer. The device may be programmed (i.e. offset and threshold voltages pre-set) by a method making advantageous use of charge storage in the material, wherein the interferometric modulator is pre-charged in such a way that the hysteresis curve shifts, and the actuation voltage threshold of the modulator is significantly lowered. During programming phase, charge transfer between the electrodes and the materials can be performed by applying voltage to the electrodes (i.e. applying electrical field across the material) or by UV-illumination and injection of electrical charges over the energy barrier. The interferometric modulator may then be retained in an actuated state with a significantly lower actuation voltage, thereby saving power.
    • 形成电容MEMS器件,其具有陷阱并保持电荷的电极之间的材料。 该材料可以在几种配置中实现。 它可以是具有不同带隙能量或带能级的区域的多层电介质叠层。 电介质材料本身可以是歪斜的,即当在材料中预先制造缺陷或捕获位置时。 另一种结构涉及导电材料的薄层,其中电介质层的禁止间隙具有能级。 可以通过有利地使用材料中的电荷存储的方法来对器件进行编程(即,偏移和阈值电压预设),其中干涉式调制器以滞后曲线偏移的方式预充电,并且致动电压 调制器的阈值显着降低。 在编程阶段期间,电极和材料之间的电荷转移可以通过向电极施加电压(即跨越材料施加电场)或通过UV照射和在能量屏障上注入电荷来执行。 然后干涉式调制器可以以明显更低的致动电压保持在致动状态,从而节省功率。