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    • 31. 发明授权
    • Robust method of forming a cylinder capacitor for DRAM circuits
    • 形成用于DRAM电路的圆柱电容器的坚固的方法
    • US5854119A
    • 1998-12-29
    • US058794
    • 1998-04-13
    • James WuYu-Hua LeeJenn Ming Huang
    • James WuYu-Hua LeeJenn Ming Huang
    • H01L21/02H01L21/311H01L21/8242H01L21/20
    • H01L27/10852H01L21/31116H01L28/40
    • A method of forming a capacitor for DRAM or other circuits is described which avoids the problem of weak spots or gaps forming between a polysilicon contact plug and the first capacitor plate. A layer of first dielectric is formed on a substrate, A layer of second dielectric is formed on the layer of first dielectric. A layer of third dielectric is formed on the layer of second dielectric. A first hole is formed in the first, second, and third dielectrics exposing a contact region of the substrate. The first hole is then filled with a protective material and a second hole is formed in the layer of third dielectric using the layer of second dielectric as an etch stop. The first hole lies within the periphery of the second hole. The protective material prevents re-deposition of the third dielectric. The remaining protective material is then removed and a layer of conducting material is formed on the top surface of the layer of third dielectric, the sidewalls of the second hole, the sidewalls of the first hole, and the contact region of the substrate thereby forming a first capacitor plate.
    • 描述了形成用于DRAM或其他电路的电容器的方法,其避免了在多晶硅接触插塞和第一电容器板之间形成的弱点或间隙的问题。 在基板上形成第一电介质层。在第一电介质层上形成第二电介质层。 在第二电介质层上形成第三电介质层。 在暴露基板的接触区域的第一,第二和第三电介质中形成第一孔。 然后用保护材料填充第一孔,并且使用第二电介质层作为蚀刻停止件在第三电介质层中形成第二孔。 第一个孔位于第二个孔的周围。 保护材料防止第三电介质的再沉积。 然后去除剩余的保护材料,并且在第三电介质层的顶表面,第二孔的侧壁,第一孔的侧壁和衬底的接触区域上形成导电材料层,从而形成 第一电容器板。