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31. 发明授权

US06501743B1 Apparatus and method of network synchronization in asymmetric two-way satellite communication system 失效
标题翻译：非对称双向卫星通信系统中网络同步的装置与方法
公开(公告)号：US06501743B1
公开(公告)日：2002-12-31
申请号：US09421994
申请日：1999-10-20
申请人： Won-Ho Kim , Jae-Young Ahn , Yong-Hoon Cho , Seong-Pal Lee
发明人： Won-Ho Kim , Jae-Young Ahn , Yong-Hoon Cho , Seong-Pal Lee
IPC分类号： H04B7212
CPC分类号： H04B7/2125
摘要： An apparatus and method of network synchronization for synchronous burst transmission in an asymmetric two-way satellite communication system. Network synchronization information is broadcast to all remote stations using an adaptation field structure that is defined at the MPEG-2 system standard. In addition, all remote stations maintain synchronization between the central station and remote stations using network synchronization information that is located at a program clock reference part and an original program clock reference part of the adaptation field structure.
摘要翻译：一种不对称双向卫星通信系统中同步突发传输的网络同步装置和方法。使用在MPEG-2系统标准中定义的适配场结构将网络同步信息广播到所有远程站。此外，所有远程站使用位于适配场结构的程序时钟参考部分和原始程序时钟参考部分的网络同步信息来保持中心站和远程站之间的同步。

32. 发明授权

US09431414B2 Vertical memory devices and methods of manufacturing the same 有权
标题翻译：垂直存储器件及其制造方法
公开(公告)号：US09431414B2
公开(公告)日：2016-08-30
申请号：US14517025
申请日：2014-10-17
申请人： Byong-Hyun Jang , Dong-Chul Yoo , Ki-Hyun Hwang , Phil-Ouk Nam , Jae-Young Ahn
发明人： Byong-Hyun Jang , Dong-Chul Yoo , Ki-Hyun Hwang , Phil-Ouk Nam , Jae-Young Ahn
IPC分类号： H01L27/115 , H01L29/66 , H01L29/792
CPC分类号： H01L27/11565 , H01L27/1158 , H01L29/66833 , H01L29/7926
摘要： Nonvolatile memory devices include at least four cylindrical-shaped channel regions, which extend vertically from portions of a substrate located at respective vertices of at least one rhomboid when viewed in a vertical direction relative to a surface of the substrate. A charge storage layer (e.g., ONO layer) is provided on an outer sidewall of each of the cylindrical-shaped channel regions. In addition, to achieve a high degree of integration, a plurality of vertically-stacked gate electrodes are provided, which extend adjacent each of the cylindrical-shaped channel regions.
摘要翻译：非易失性存储器件包括至少四个圆柱形沟道区域，当从垂直于衬底表面的垂直方向观察时，至少四个圆柱形沟道区域从位于至少一个菱形晶体的相应顶点处的衬底的部分垂直延伸。电荷存储层（例如，ONO层）设置在每个圆柱形沟道区的外侧壁上。此外，为了实现高度的集成，提供了多个垂直堆叠的栅电极，其在每个圆柱形沟道区域附近延伸。

33. 发明授权

US09324730B2 Vertical memory devices and methods of manufacturing the same 有权
标题翻译：垂直存储器件及其制造方法
公开(公告)号：US09324730B2
公开(公告)日：2016-04-26
申请号：US14601496
申请日：2015-01-21
申请人： Phil-Ouk Nam , Dong-Chul Yoo , Bi-O Kim , Jae-Young Ahn , Byong-Hyun Jang , Ki-Hyun Hwang
发明人： Phil-Ouk Nam , Dong-Chul Yoo , Bi-O Kim , Jae-Young Ahn , Byong-Hyun Jang , Ki-Hyun Hwang
IPC分类号： H01L29/792 , H01L27/115 , H01L27/02
CPC分类号： H01L27/11582 , H01L27/0207 , H01L27/11565 , H01L27/1157
摘要： A vertical memory device including a substrate including first regions and a second region; a plurality of channels in the first regions, the plurality of channels extending in a first direction substantially perpendicular to a top surface of the substrate; a charge storage structure on a sidewall of each channel in a second direction substantially parallel to the top surface of the substrate; a plurality of gate electrodes in the first regions, the plurality of gate electrodes arranged on a sidewall of the charge storage structure and spaced apart from each other in the first direction; and a plurality of supporters in the second region, the plurality of supporters spaced apart from each other in a third direction substantially perpendicular to the first direction and the second direction, the plurality of supporters contacting a sidewall of at least one gate electrode.
摘要翻译：一种垂直存储器件，包括：包括第一区域和第二区域的衬底; 所述第一区域中的多个通道，所述多个通道在基本上垂直于所述基板的顶表面的第一方向上延伸; 每个通道的侧壁上的电荷存储结构，其基本上平行于所述基板的顶表面; 所述第一区域中的多个栅极电极，所述多个栅电极设置在所述电荷存储结构的侧壁上，并且在所述第一方向上彼此间隔开; 以及在所述第二区域中的多个支撑件，所述多个支撑件在基本上垂直于所述第一方向和所述第二方向的第三方向上彼此间隔开，所述多个支撑件接触至少一个栅电极的侧壁。

34. 发明申请

US20140054676A1 VERTICAL TYPE SEMICONDUCTOR DEVICES INCLUDING OXIDATION TARGET LAYERS 有权
标题翻译：垂直型半导体器件，包括氧化目标层
公开(公告)号：US20140054676A1
公开(公告)日：2014-02-27
申请号：US13971347
申请日：2013-08-20
申请人： Phil-Ouk Nam , Jun-Kyu Yang , Byong-Hyun Jang , Ki-Hyun Hwang , Jae-Young Ahn
发明人： Phil-Ouk Nam , Jun-Kyu Yang , Byong-Hyun Jang , Ki-Hyun Hwang , Jae-Young Ahn
IPC分类号： H01L29/792
CPC分类号： H01L27/11582 , H01L27/11519 , H01L27/11524 , H01L27/11556 , H01L27/11565 , H01L27/1157 , H01L29/7889 , H01L29/7926
摘要： A vertical type semiconductor device can include a vertical pillar structure that includes a channel pattern with an outer wall. Horizontal insulating structures can be vertically spaced apart from one another along the vertical pillar structure to define first vertical gaps therebetween at first locations away from the outer wall and to define second vertical gaps therebetween at the outer wall, where the second vertical gaps are wider than the first vertical gaps. Horizontal wordline structures can be conformally located in the first and second vertical gaps between the vertically spaced apart horizontal insulating structures, so that the horizontal wordline structures can be vertically thinner across the first vertical gaps than across the second vertical gaps.
摘要翻译：垂直型半导体器件可以包括垂直柱结构，其包括具有外壁的沟道图案。水平绝缘结构可以沿着垂直柱结构彼此垂直间隔开，以在远离外壁的第一位置处限定第一垂直间隙，并且在外壁处限定第二垂直间隙，其中第二垂直间隙宽于第一垂直间隙。水平字线结构可以共形地位于垂直间隔开的水平绝缘结构之间的第一和第二垂直间隙中，使得水平字线结构可跨越第一垂直间隙而横跨第二垂直间隙。

35. 发明授权

US08406775B2 Method for selecting beams during initial synchronization process using switched beam, switched beam operation method and initial synchronization using the same 失效
标题翻译：在使用切换光束的初始同步处理中选择光束的方法，切换光束操作方法以及使用其的初始同步
公开(公告)号：US08406775B2
公开(公告)日：2013-03-26
申请号：US11914922
申请日：2005-12-13
申请人： Jae-Young Ahn , Yong-Soo Cho , Hyun-Soo Ko
发明人： Jae-Young Ahn , Yong-Soo Cho , Hyun-Soo Ko
IPC分类号： H04W40/00
CPC分类号： H04B7/0491 , H04B7/0408 , H04B7/0617 , H04L5/023 , H04W16/10 , H04W16/24 , H04W16/28
摘要： A method for selecting beams, a switched beam operation method during an initial synchronization process, and an initial synchronization method using it are provided for selecting beams to minimize the probability of occurrence of interferences between cells by considering a distance between beams within neighboring sectors during an initial synchronization process using switched beams, in an orthogonal frequency division multiplexing (OFDM) cellular system employing a smart antenna. The inventive method comprises the steps of dividing each cell into sectors, and counting the number of fixed beams per cell, and selecting a switched beam for minimizing probability of interference, from fixed beams presenting in a corresponding sector, based on distances between a selected beam and beams of all of adjacent cells and the number of cases to be selected in a subsequent time slot, according to the counted number of the fixed beams existing in each sector.
摘要翻译：提供一种用于选择波束的方法，初始同步过程中的切换波束操作方法以及使用该方法的初始同步方法，用于选择波束以通过考虑在相邻扇区内的波束之间的距离来最小化小区之间干扰发生的概率在使用智能天线的正交频分复用（OFDM）蜂窝系统中使用切换波束的初始同步过程。本发明的方法包括以下步骤：将每个小区划分成扇区，并且对每个小区的固定波束数进行计数，并且根据所选择的波束之间的距离，选择用于最小化相应扇区中呈现的固定波束的干扰概率的切换波束根据存在于每个扇区中的固定光束的数目，所有相邻小区的波束和后续时隙中的选择的个数。

36. 再颁专利

USRE44092E1 Apparatus and method for adaptively modulating signal by using layered time-space detector used in MIMO system 有权
标题翻译：利用MIMO系统中分层时空检测器对信号进行自适应调制的装置和方法
公开(公告)号：USRE44092E1
公开(公告)日：2013-03-19
申请号：US12949425
申请日：2010-11-18
申请人： Young-Doo Kim , Inhyoung Kim , Heejung Yu , Jihoon Choi , Taehyun Jeon , Jae-Young Ahn , Yong-Hoon Lee
发明人： Young-Doo Kim , Inhyoung Kim , Heejung Yu , Jihoon Choi , Taehyun Jeon , Jae-Young Ahn , Yong-Hoon Lee
IPC分类号： H04B7/02
CPC分类号： H04B7/0891 , H04B7/0417 , H04B7/0626 , H04B7/0697 , H04L1/0003 , H04L1/0656 , H04L5/0007 , H04L5/0023 , H04L5/0028 , H04L5/0046 , H04L5/006 , H04W52/42
摘要： An apparatus for adaptively modulating/demodulating signals in a multi-input multi-output (MIMO) system having a layered time-space architecture detector and a method thereof is disclosed. The apparatus includes: a bit and power allocation information calculator for deciding an equivalent channel gain in a reverse order of Vertical-Bell laboratories Space Time (V-BLAST) based on MIMO channel information feedbacked from a receiver and determining the number of bits and transmission power to be transmitted to each transmitting antenna by using the equivalent channel gain; and adaptive modulation means for modulating signal of each layer with corresponding modulation method based on the determined number of bits and transmitting power, controlling the transmitting power and transmitting the adaptively modulated signal through each transmitting antenna. The present invention can improve performance without increase of implementation complexity and easily expand to MIMO-OFDM system by adaptively modulating and demodulating signals in reverse order of conventional V-BLAST detection method.
摘要翻译：公开了一种用于在具有分层时空架构检测器及其方法的多输入多输出（MIMO）系统中自适应地调制/解调信号的装置。该装置包括：位和功率分配信息计算器，用于基于从接收机反馈的MIMO信道信息来确定垂直 - 贝尔实验室空时（V-BLAST）的相反顺序的等效信道增益，并确定比特数和传输次数通过使用等效信道增益发送到每个发射天线的功率; 以及自适应调制装置，用于根据所确定的比特数和发送功率，通过相应的调制方法对每一层的信号进行调制，控制发送功率，并通过每个发送天线发送自适应调制信号。本发明可以通过以常规V-BLAST检测方法的相反顺序自适应调制和解调信号，而不增加实现复杂度并且容易地扩展到MIMO-OFDM系统。

37. 发明申请

US20130032878A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130032878A1
公开(公告)日：2013-02-07
申请号：US13560022
申请日：2012-07-27
申请人： Bi-O Kim , Byong-Ju Kim , Jung-Geun Jee , Jin-Gyun Kim , Jae-Young Ahn , Ki-Hyun Hwang
发明人： Bi-O Kim , Byong-Ju Kim , Jung-Geun Jee , Jin-Gyun Kim , Jae-Young Ahn , Ki-Hyun Hwang
IPC分类号： H01L29/78 , H01L29/02
CPC分类号： H01L27/1157 , H01L27/11582 , H01L29/105
摘要： According to example embodiments, a semiconductor device includes horizontal patterns stacked on a substrate. The horizontal patterns define an opening through the horizontal patterns. A first core pattern is in the opening. A second core pattern is in the opening on the first core pattern. A first active pattern is between the first core pattern and the horizontal patterns. A second active pattern containing a first element is between the second core pattern and the horizontal patterns. The second active pattern contains the first element at a higher concentration than a concentration of the first element in the second core pattern.
摘要翻译：根据示例性实施例，半导体器件包括堆叠在衬底上的水平图案。水平图案通过水平图案定义开口。第一个核心模式是在开幕。第一个核心模式是第一个核心模式的开放。第一活动模式在第一芯图案和水平图案之间。包含第一元件的第二活动图案位于第二芯图案和水平图案之间。第二活性图案含有比第二芯图案中的第一元素的浓度高的浓度的第一元素。

38. 发明申请

US20120276696A1 VERTICAL STRUCTURE NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：垂直结构非易失性存储器件及其制造方法
公开(公告)号：US20120276696A1
公开(公告)日：2012-11-01
申请号：US13456415
申请日：2012-04-26
申请人： Jun-Kyu Yang , Ki-Hyun Hwang , Phil-Ouk Nam , Jae-Young Ahn , Han-Mei Choi , Dong-Chul Yoo
发明人： Jun-Kyu Yang , Ki-Hyun Hwang , Phil-Ouk Nam , Jae-Young Ahn , Han-Mei Choi , Dong-Chul Yoo
IPC分类号： H01L21/336
CPC分类号： H01L29/7926 , H01L27/11556 , H01L27/11582 , H01L29/7889
摘要： A vertical structure non-volatile memory device in which a gate dielectric layer is prevented from protruding toward a substrate; a resistance of a ground selection line (GSL) electrode is reduced so that the non-volatile memory device is highly integrated and has improved reliability, and a method of manufacturing the same are provided. The method includes: sequentially forming a polysilicon layer and an insulating layer on a silicon substrate; forming a gate dielectric layer and a channel layer through the polysilicon layer and the insulating layer, the gate dielectric layer and the channel layer extending in a direction perpendicular to the silicon substrate; forming an opening for exposing the silicon substrate, through the insulating layer and the polysilicon layer; removing the polysilicon layer exposed through the opening, by using a halogen-containing reaction gas at a predetermined temperature; and filling a metallic layer in the space formed by removing the polysilicon layer.
摘要翻译：一种垂直结构的非易失性存储器件，其中防止栅介质层向衬底突出; 降低了接地选择线（GSL）电极的电阻，使得非易失性存储器件高度集成并且具有改进的可靠性，并且提供了其制造方法。该方法包括：在硅衬底上依次形成多晶硅层和绝缘层; 通过所述多晶硅层和所述绝缘层形成栅介质层和沟道层，所述栅介质层和所述沟道层在垂直于所述硅衬底的方向上延伸; 形成用于使所述硅衬底暴露于所述绝缘层和所述多晶硅层的开口; 通过在预定温度下使用含卤素反应气体去除通过开口暴露的多晶硅层; 并在通过去除多晶硅层形成的空间中填充金属层。

39. 发明授权

US08227357B2 Methods of fabricating silicon oxide layers using inorganic silicon precursors and methods of fabricating semiconductor devices including the same 失效
标题翻译：使用无机硅前体制造氧化硅层的方法和制造包括其的半导体器件的方法
公开(公告)号：US08227357B2
公开(公告)日：2012-07-24
申请号：US12730406
申请日：2010-03-24
申请人： In-Sun Yi , Ki-Hyun Hwang , Jin-Tae Noh , Jae-Young Ahn , Si-Young Choi
发明人： In-Sun Yi , Ki-Hyun Hwang , Jin-Tae Noh , Jae-Young Ahn , Si-Young Choi
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/28273 , H01L21/02164 , H01L21/0217 , H01L21/02219 , H01L21/0228 , H01L21/28282 , H01L21/3185 , H01L27/11521 , H01L27/11568
摘要： Methods of fabricating a silicon oxide layer using an inorganic silicon precursor and methods of fabricating a semiconductor device using the same are provided. The methods of fabricating a semiconductor device include forming a tunnel insulating layer and a charge storage layer on a substrate; forming a dielectric layer structure on the charge storage layer using an atomic layer deposition (ALD) method, the dielectric layer structure including a first dielectric layer formed of silicon oxide, a second dielectric layer on the first dielectric layer formed of a material different from the material forming the first dielectric layer, and a third dielectric layer formed of the silicon oxide on the second dielectric layer; and forming a control gate on the dielectric layer structure. The first and third dielectric layers formed of the silicon oxide are formed using a first gas including an inorganic silicon precursor, a second gas including hydrogen gas or a hydrogen component, and a third gas including an oxide gas.
摘要翻译：提供了使用无机硅前体制造氧化硅层的方法和使用其制造半导体器件的方法。制造半导体器件的方法包括在衬底上形成隧道绝缘层和电荷存储层; 使用原子层沉积（ALD）方法在所述电荷存储层上形成电介质层结构，所述电介质层结构包括由氧化硅形成的第一电介质层，所述第一电介质层上的第二电介质层由不同于形成第一电介质层的材料和由第二电介质层上的氧化硅形成的第三电介质层; 以及在介电层结构上形成控制栅极。由氧化硅形成的第一和第三电介质层使用包括无机硅前体的第一气体，包括氢气或氢组分的第二气体和包括氧化物气体的第三气体形成。

40. 发明授权

US08213335B2 Communication resource allocation method of base station 失效
标题翻译：基站通信资源分配方法
公开(公告)号：US08213335B2
公开(公告)日：2012-07-03
申请号：US12064808
申请日：2006-08-23
申请人： Jae-Kyun Kwon , Jae-Young Ahn , Hyo-Jin Lee , Hee-Soo Lee
发明人： Jae-Kyun Kwon , Jae-Young Ahn , Hyo-Jin Lee , Hee-Soo Lee
IPC分类号： H04L12/28
CPC分类号： H04W72/048 , H04W16/02 , H04W72/08
摘要： A communication resource allocation method for solving resource request imbalance content in a cell is provided. Considering a propagation environment, the base station allocates a whispering resource to a whispering area, the whispering resource being one part of the communication resource and the whispering area being a peripheral area of the first base station, and allocates a speaking resource to a speaking area, the speaking resource being other parts of the communication resource and the speaking area being a border area of a cell. When the resource request of the whispering area is increased, the base station further allocates a part of the speaking resource to the whispering area or increases a ratio of the whispering resource. When the resource request of the speaking area is increased, the base station controls a threshold value for identifying the whispering and speaking areas or increases a ratio of the speaking resource.
摘要翻译：提供了一种用于解决小区中的资源请求不平衡内容的通信资源分配方法。考虑到传播环境，基站向耳语区域分配耳语资源，耳语资源是通信资源的一部分，耳语区域是第一基站的外围区域，并且向说话区域分配说话资源说话资源是通信资源的其他部分，而说话区是单元的边界区域。当耳语区域的资源请求增加时，基站进一步将话音资源的一部分分配给耳语区域，或增加耳语资源的比例。当语音区域的资源请求增加时，基站控制用于识别耳语和说话区域的阈值，或增加说话资源的比例。

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