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31. 发明申请

US20100197508A1 Integrated Universal Chemical Detector with Selective Diffraction Array 审中-公开
$Integrated Universal Chemical Detector with Selective Diffraction Array$
标题翻译：集成通用化学检测器与选择性衍射阵列
公开(公告)号：US20100197508A1
公开(公告)日：2010-08-05
申请号：US12364777
申请日：2009-02-03
申请人： Dustin S. Carter , Yeonjoon Park , Glen C. King , Sang H. Choi
发明人： Dustin S. Carter , Yeonjoon Park , Glen C. King , Sang H. Choi
IPC分类号： C40B30/00 , C40B60/10
CPC分类号： G01N21/4788
摘要： Integrated universal chemical detector in a micro-optical chip in which chemical/bio-sensitive micro/nano-pixels are aligned to create diffraction patterns that can be visually or instrumentally categorized in order to identify a substantial plurality of agents. By using a diffraction method to create a macroscopic diffraction image, a single small array can effectively detect hundreds or even thousands of different chemicals. The apparatus can be further automated by analyzing the diffraction patterns electronically.
摘要翻译：化学/生物敏感微/纳米像素对准的微型光学芯片中的集成通用化学检测器，以产生可视觉或仪器化分类以便识别大量多种试剂的衍射图案。通过使用衍射法创建宏观衍射图像，单个小阵列可以有效地检测数百种甚至数千种不同的化学物质。可以通过电子分析衍射图来进一步自动化该装置。

32. 发明授权

US07341883B2 Silicon germanium semiconductive alloy and method of fabricating same 有权
标题翻译：硅锗半导体合金及其制造方法
公开(公告)号：US07341883B2
公开(公告)日：2008-03-11
申请号：US11242415
申请日：2005-09-27
申请人： Yeonjoon Park , Sang H. Choi , Glen C. King
发明人： Yeonjoon Park , Sang H. Choi , Glen C. King
IPC分类号： H01L21/00 , H01L29/04 , C30B23/00
CPC分类号： H01L31/1812 , H01L21/0242 , H01L21/02433 , H01L21/0245 , H01L21/02505 , H01L21/02516 , H01L21/02532 , H01L21/02609 , H01L31/1037 , Y02E10/50
摘要： A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al2O3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a orientation of the cubic diamond structure SiGe is aligned with a orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium.
摘要翻译：硅锗（SiGe）半导体合金生长在单晶Al 2 O 3 3的衬底上。立方金刚石结构SiGe的{111}晶面在衬底的{0001} C面上生长，使得立方晶体结构SiGe的<110>取向与<1,0,1.0> {0001} C面的取向。通过使用硅原子比为0.7223原子％和0.2777原子百分比的锗的SiGe组合来实现衬底和SiGe之间的晶格匹配。

33. 发明授权

US07906358B2 Epitaxial growth of cubic crystalline semiconductor alloys on basal plane of trigonal or hexagonal crystal 有权
标题翻译：立方晶体半导体合金在三角晶体或六方晶体的基面上的外延生长
公开(公告)号：US07906358B2
公开(公告)日：2011-03-15
申请号：US12254017
申请日：2008-10-20
申请人： Yeonjoon Park , Sang H. Choi , Glen C. King
发明人： Yeonjoon Park , Sang H. Choi , Glen C. King
IPC分类号： H01L21/00 , H01L29/22 , H01L29/20 , H01L21/02
CPC分类号： G01N23/207
摘要： Hetero-epitaxial semiconductor materials comprising cubic crystalline semiconductor alloys grown on the basal plane of trigonal and hexagonal substrates, in which misfit dislocations are reduced by approximate lattice matching of the cubic crystal structure to underlying trigonal or hexagonal substrate structure, enabling the development of alloyed semiconductor layers of greater thickness, resulting in a new class of semiconductor materials and corresponding devices, including improved hetero-bipolar and high-electron mobility transistors, and high-mobility thermoelectric devices.
摘要翻译：异质外延半导体材料包括在三角和六边形衬底的基底面上生长的立方晶体半导体合金，其中失配位错通过立方晶体结构与下面的三角或六边形衬底结构的近似晶格匹配而减少，从而能够开发合金半导体更大厚度的层，导致新类型的半导体材料和相应的器件，包括改进的异质双极和高电子迁移率晶体管以及高迁移率热电器件。

34. 发明授权

US08257491B2 Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials 有权
标题翻译：具有单晶性质的三面体立方体半导体材料和基于这种材料的器件
公开(公告)号：US08257491B2
公开(公告)日：2012-09-04
申请号：US12288379
申请日：2008-10-20
申请人： Yeonjoon Park , Sang Hyouk Choi , Glen C. King , James R. Elliott
发明人： Yeonjoon Park , Sang Hyouk Choi , Glen C. King , James R. Elliott
IPC分类号： C30B33/06 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： G01N23/207
摘要： Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.
摘要翻译：开发基于温度依赖性取向模型的生长条件，以使得能够在三面晶体基底的（0001）面上形成[111]取向的立方体IV族，II-V族和II-VI族晶体，控制使得与多数单晶相比，原生双晶的体积百分比从约40％降低至约0.3％。本实施例和其它实施例中堆垛层错的控制可以产生基本上没有缺陷的这些材料的单晶半导体，或者具有用于声子散射的具有孪晶晶体的改进的热电材料，同时保持电气完整性。这些方法可以选择性地产生立方晶三面体外延半导体材料，其中立方体层基本上与下面的三角形材料直接对准或者60度旋转。

35. 发明申请

US20100027746A1 X-ray diffraction wafer mapping method for rhombohedral super-hetero-epitaxy 有权
$X-ray diffraction wafer mapping method for rhombohedral super-hetero-epitaxy$
标题翻译：用于菱面体超异质外延的X射线衍射晶片测绘方法
公开(公告)号：US20100027746A1
公开(公告)日：2010-02-04
申请号：US12288380
申请日：2008-10-20
申请人： Yeonjoon PARK , Sang Hyouk Choi , Glen C. King , James R. Elliott , Albert L. Dimarcantonio
发明人： Yeonjoon PARK , Sang Hyouk Choi , Glen C. King , James R. Elliott , Albert L. Dimarcantonio
IPC分类号： G01N23/207 , G01N23/20
CPC分类号： G01N23/207
摘要： A new X-ray diffraction (XRD) method is provided to acquire XY mapping of the distribution of single crystals, poly-crystals, and twin defects across an entire wafer of rhombohedral super-hetero-epitaxial semiconductor material. In one embodiment, the method is performed with a point or line X-ray source with an X-ray incidence angle approximating a normal angle close to 90°, and in which the beam mask is preferably replaced with a crossed slit. While the wafer moves in the X and Y direction, a narrowly defined X-ray source illuminates the sample and the diffracted X-ray beam is monitored by the detector at a predefined angle. Preferably, the untilted, asymmetric scans are of {440} peaks, for twin defect characterization.
摘要翻译：提供了一种新的X射线衍射（XRD）方法，以获得在整个菱面体超异质外延半导体材料晶圆上单晶，多晶和双缺陷分布的XY映射。在一个实施例中，该方法用具有接近90°的法线角的X射线入射角的点或线X射线源进行，其中光束掩模优选地被交叉的狭缝代替。当晶片在X和Y方向上移动时，狭窄定义的X射线源照射样品，并且由检测器以预定角度监测衍射的X射线束。优选地，对于双缺陷表征，直到不对称扫描为{440}峰。

36. 发明授权

US07769135B2 X-ray diffraction wafer mapping method for rhombohedral super-hetero-epitaxy 有权
$X-ray diffraction wafer mapping method for rhombohedral super-hetero-epitaxy$
公开(公告)号：US07769135B2
公开(公告)日：2010-08-03
申请号：US12288380
申请日：2008-10-20
申请人： Yeonjoon Park , Sang Hyouk Choi , Glen C. King , James R. Elliott , Albert L. Dimarcantonio
发明人： Yeonjoon Park , Sang Hyouk Choi , Glen C. King , James R. Elliott , Albert L. Dimarcantonio
IPC分类号： G01N23/20
CPC分类号： G01N23/207
摘要： A new X-ray diffraction (XRD) method is provided to acquire XY mapping of the distribution of single crystals, poly-crystals, and twin defects across an entire wafer of rhombohedral super-hetero-epitaxial semiconductor material. In one embodiment, the method is performed with a point or line X-ray source with an X-ray incidence angle approximating a normal angle close to 90°, and in which the beam mask is preferably replaced with a crossed slit. While the wafer moves in the X and Y direction, a narrowly defined X-ray source illuminates the sample and the diffracted X-ray beam is monitored by the detector at a predefined angle. Preferably, the untilted, asymmetric scans are of {440} peaks, for twin defect characterization.

37. 发明申请

US20090140296A1 Epitaxial Growth of Cubic Crystalline Semiconductor Alloys on Basal Plane of Trigonal or Hexagonal Crystal 有权
标题翻译：立方晶体半导体合金在三角晶体或六角晶体基底上的外延生长
公开(公告)号：US20090140296A1
公开(公告)日：2009-06-04
申请号：US12254017
申请日：2008-10-20
申请人： Yeonjoon Park , Sang H. Choi , Glen C. King
发明人： Yeonjoon Park , Sang H. Choi , Glen C. King
IPC分类号： H01L29/737 , C09K3/00 , H01L29/778 , G06F19/00
CPC分类号： G01N23/207
摘要： Hetero-epitaxial semiconductor materials comprising cubic crystalline semiconductor alloys grown on the basal plane of trigonal and hexagonal substrates, in which misfit dislocations are reduced by approximate lattice matching of the cubic crystal structure to underlying trigonal or hexagonal substrate structure, enabling the development of alloyed semiconductor layers of greater thickness, resulting in a new class of semiconductor materials and corresponding devices, including improved hetero-bipolar and high-electron mobility transistors, and high-mobility thermoelectric devices.
摘要翻译：异质外延半导体材料包括在三角和六边形衬底的基底面上生长的立方晶体半导体合金，其中失配位错通过立方晶体结构与下面的三角或六边形衬底结构的近似晶格匹配而减少，从而能够开发合金半导体更大厚度的层，导致新类型的半导体材料和相应的器件，包括改进的异质双极和高电子迁移率晶体管以及高迁移率热电器件。

38. 发明申请

US20120200696A1 Lock-In Imaging System for Detecting Disturbances in Fluid 有权
标题翻译：用于检测流体扰动的锁定成像系统
公开(公告)号：US20120200696A1
公开(公告)日：2012-08-09
申请号：US13020194
申请日：2011-02-03
申请人： Yeonjoon Park , Sang Hyouk Choi , Glen C. King , James R. Elliott , Albert L. Dimarcantonio
发明人： Yeonjoon Park , Sang Hyouk Choi , Glen C. King , James R. Elliott , Albert L. Dimarcantonio
IPC分类号： H04N7/18
CPC分类号： G01P5/26 , G01P5/00 , G01S1/14 , G01S17/95 , Y02A90/19
摘要： A lock-in imaging system is configured for detecting a disturbance in air. The system includes an airplane, an interferometer, and a telescopic imaging camera. The airplane includes a fuselage and a pair of wings. The airplane is configured for flight in air. The interferometer is operatively disposed on the airplane and configured for producing an interference pattern by splitting a beam of light into two beams along two paths and recombining the two beams at a junction point in a front flight path of the airplane during flight. The telescopic imaging camera is configured for capturing an image of the beams at the junction point. The telescopic imaging camera is configured for detecting the disturbance in air in an optical path, based on an index of refraction of the image, as detected at the junction point.
摘要翻译：锁定成像系统被配置为检测空气中的干扰。该系统包括飞机，干涉仪和伸缩成像相机。飞机包括机身和一对机翼。飞机配置为在空中飞行。干涉仪可操作地设置在飞机上并且被配置用于通过沿着两条路径将光束分成两束而产生干涉图案，并且在飞行中在飞机的前飞行路径中的接合点处重新组合两个波束。伸缩成像照相机被配置为在接合点捕获光束的图像。所述伸缩成像照相机被配置为基于在所述连接点检测到的所述图像的折射率来检测光路中的空气中的干扰。

39. 发明授权

US07558371B2 Method of generating X-ray diffraction data for integral detection of twin defects in super-hetero-epitaxial materials 有权
$Method of generating X-ray diffraction data for integral detection of twin defects in super-hetero-epitaxial materials$
标题翻译：产生X射线衍射数据的方法，用于整体检测超异质外延材料中的双缺陷
公开(公告)号：US07558371B2
公开(公告)日：2009-07-07
申请号：US12254150
申请日：2008-10-20
申请人： Yeonjoon Park , Sang Hyouk Choi , Glen C. King , James R. Elliott
发明人： Yeonjoon Park , Sang Hyouk Choi , Glen C. King , James R. Elliott
IPC分类号： G01N23/20
CPC分类号： G01N23/207
摘要： A method provides X-ray diffraction data suitable for integral detection of a twin defect in a strained or lattice-matched epitaxial material made from components having crystal structures having symmetry belonging to different space groups. The material is mounted in an X-ray diffraction (XRD) system. In one embodiment, the XRD system's goniometer angle Ω is set equal to (θB−β) where θB is a Bragg angle for a designated crystal plane of the alloy that is disposed at a non-perpendicular orientation with respect to the {111) crystal plane, and β is the angle between the designated crystal plane and a {111} crystal plane of one of the epitaxial components. The XRD system's detector angle is set equal to (θB+β). The material can be rotated through an angle of azimuthal rotation φ about the axis aligned with the material. Using the detector, the intensity of the X-ray diffraction is recorded at least at the angle at which the twin defect occurs.
摘要翻译：一种方法提供了适用于由具有属于不同空间群的对称性的晶体结构的组分制成的应变或晶格匹配的外延材料中的双缺陷的积分检测的X射线衍射数据。该材料安装在X射线衍射（XRD）系统中。在一个实施例中，XRD系统的测角仪角度Ω被设置为等于（θB-β），其中θB是相对于{111）晶体以非垂直取向设置的合金的指定晶面的布拉格角平面，β是指定的晶面与外延成分之一的{111}晶面之间的角度。 XRD系统的检测器角度设置为等于（θB+β）。材料可以围绕与材料对准的轴线旋转方位角旋转角度。使用检测器，至少以发生双瑕疵的角度记录X射线衍射的强度。

40. 发明申请

US20090103680A1 Method Of Generating X-Ray Diffraction Data For Integral Detection Of Twin Defects In Super-Hetero-Epitaxial Materials 有权
$Method Of Generating X-Ray Diffraction Data For Integral Detection Of Twin Defects In Super-Hetero-Epitaxial Materials$
标题翻译：产生X射线衍射数据的方法，用于在超异质外延材料中双缺陷的积分检测
公开(公告)号：US20090103680A1
公开(公告)日：2009-04-23
申请号：US12254150
申请日：2008-10-20
申请人： Yeonjoon Park , Sang Hyouk Choi , Glen C. King , James R. Elliott
发明人： Yeonjoon Park , Sang Hyouk Choi , Glen C. King , James R. Elliott
IPC分类号： G01N23/207
CPC分类号： G01N23/207
摘要： A method provides X-ray diffraction data suitable for integral detection of a twin defect in a strained or lattice-matched epitaxial material made from components having crystal structures having symmetry belonging to different space groups. The material is mounted in an X-ray diffraction (XRD) system. In one embodiment, the XRD system's goniometer angle Ω is set equal to (θB−β) where θB is a Bragg angle for a designated crystal plane of the alloy that is disposed at a non-perpendicular orientation with respect to the {111) crystal plane, and β is the angle between the designated crystal plane and a {111} crystal plane of one of the epitaxial components. The XRD system's detector angle is set equal to (θB+β). The material can be rotated through an angle of azimuthal rotation φ about the axis aligned with the material. Using the detector, the intensity of the X-ray diffraction is recorded at least at the angle at which the twin defect occurs.
摘要翻译：一种方法提供了适用于由具有属于不同空间群的对称性的晶体结构的组分制成的应变或晶格匹配的外延材料中的双缺陷的积分检测的X射线衍射数据。该材料安装在X射线衍射（XRD）系统中。在一个实施例中，XRD系统的测角仪角度Ω被设置为等于（θB-β），其中θB是相对于{111）晶体以非垂直取向设置的合金的指定晶面的布拉格角平面，β是指定的晶面与外延成分之一的{111}晶面之间的角度。 XRD系统的检测器角度设置为等于（θB+β）。材料可以围绕与材料对准的轴线旋转方位角旋转角度。使用检测器，至少以发生双瑕疵的角度记录X射线衍射的强度。

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