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31. 发明申请

US20120049206A1 ORGANIC LIGHT-EMITTING DISPLAY DEVICE 有权
标题翻译：有机发光显示装置
公开(公告)号：US20120049206A1
公开(公告)日：2012-03-01
申请号：US13177414
申请日：2011-07-06
申请人： Jun-Ho Choi , Jin-Koo Chung , Chan-Young Park , Sung-Min Kim , Young-Woo Song , Sung-Chul Kim , Jae-Heung Ha , Kyu-Hwan Hwang , Seok-Gyu Yoon , Jong-Hyuk Lee
发明人： Jun-Ho Choi , Jin-Koo Chung , Chan-Young Park , Sung-Min Kim , Young-Woo Song , Sung-Chul Kim , Jae-Heung Ha , Kyu-Hwan Hwang , Seok-Gyu Yoon , Jong-Hyuk Lee
IPC分类号： H01L33/62
CPC分类号： H01L27/326 , H01L51/5275
摘要： An organic light-emitting display device includes: a substrate; pixels on a first side of the substrate, each of the pixels comprising a first region for emitting light and a second region for transmitting external light; pixel circuits on the first regions of the pixels, each of the pixel circuits comprising at least one thin film transistor; an insulating layer covering the pixel circuits; first electrodes on the insulating layer, spaced from each other on the first regions, and electrically connected to the pixel circuits; a second electrode opposite the first electrodes and formed throughout the first and second regions of all the pixels; an organic layer between the first electrodes and the second electrode; a sealing member facing the first side of the substrate; and an anti-reflection layer located on at least one of a second side of the substrate or an outer side of the sealing member.
摘要翻译：一种有机发光显示装置，包括：基板; 像素，每个像素包括用于发光的第一区域和用于传输外部光的第二区域; 像素电路在像素的第一区域上，每个像素电路包括至少一个薄膜晶体管; 覆盖像素电路的绝缘层; 绝缘层上的第一电极，在第一区域上彼此间隔开，并电连接到像素电路; 与所述第一电极相对并且形成在所有像素的整个第一和第二区域中的第二电极; 第一电极和第二电极之间的有机层; 面对所述基板的第一侧的密封构件; 以及位于基板的第二面或密封部件的外侧的至少一方的防反射层。

32. 发明授权

US08036496B2 Method for providing real-time service of huge and high quality digital image on internet 有权
标题翻译：在互联网上提供高质量数字图像的实时服务的方法
公开(公告)号：US08036496B2
公开(公告)日：2011-10-11
申请号：US12613818
申请日：2009-11-06
申请人： Sung-Min Kim
发明人： Sung-Min Kim
IPC分类号： G06K9/54 , G06K9/36
CPC分类号： G06Q30/0277 , G06F17/3028 , G06F17/30902 , G06Q30/02 , G06T3/40 , G06T5/20 , G06T9/00 , G06T2207/20021 , H04N19/119 , H04N19/176 , H04N19/85
摘要： A method for providing real time service of huge and high quality digital image on internet is disclosed, wherein data relevant to a general life such as a general photo, an advertising leaflet, and a pamphlet and professional image data exhibited in an art gallery, exhibition grounds, a pavilion are made into huge and high quality digital image or scanned and photographed to be digital, thereby processing real time service as an interactive browsing form. In the present invention, data are directly made, edited, constructed, and uploaded on internet, thereby providing various additional information with image through hyperlink and processing high quality digital image service on network without speed delay for huge image.
摘要翻译：公开了一种在互联网上提供巨大和高质量数字图像的实时服务的方法，其中涉及一般生活的数据，例如一般照片，广告传单和小册子以及在艺术画廊展出的专业图像数据理由，一个亭子被制成巨大和高质量的数字图像或扫描和拍照为数字，从而作为交互式浏览形式处理实时服务。在本发明中，在因特网上直接制作，编辑，构造和上传数据，从而通过超链接提供各种附加信息，并且在网络上处理高质量的数字图像服务，而无需对巨大图像的速度延迟。

33. 发明授权

US08024016B2 Portable electronic device 有权
标题翻译：便携式电子设备
公开(公告)号：US08024016B2
公开(公告)日：2011-09-20
申请号：US11723912
申请日：2007-03-22
申请人： Seung-Geun Lim , Won-Seok Joo , Sung-Min Kim
发明人： Seung-Geun Lim , Won-Seok Joo , Sung-Min Kim
IPC分类号： H04M1/00
CPC分类号： H04M1/0283 , B29C45/1671 , B29L2031/3437
摘要： A portable electronic device having a front cover, a rear cover, and wherein one of the front cover and the rear cover is metallic and has a pattern portion with a predetermined pattern. In addition, a portable electronic device having a front cover, a rear cover, and a metallic pattern layer provided on at least one of the covers, the metallic pattern layer having a predetermined pattern.
摘要翻译：一种具有前盖，后盖的便携式电子设备，其中前盖和后盖中的一个是金属的并且具有预定图案的图案部分。此外，具有设置在至少一个盖上的前盖，后盖和金属图案层的便携式电子装置，金属图案层具有预定图案。

34. 发明申请

US20110054228A1 BLUE ELECTROLUMINESCENT COMPOUNDS WITH HIGH EFFICIENCY AND DISPLAY DEVICE USING THE SAME 审中-公开
标题翻译：具有高效率的蓝色电致发光化合物和使用其的显示装置
公开(公告)号：US20110054228A1
公开(公告)日：2011-03-03
申请号：US12743188
申请日：2007-11-22
申请人： Sung-Min Kim , Bong Ok Kim , Mi Young Kwak , Hyuck Joo Kwon , Young Jun Cho
发明人： Sung-Min Kim , Bong Ok Kim , Mi Young Kwak , Hyuck Joo Kwon , Young Jun Cho
IPC分类号： C07C13/62
CPC分类号： C09K11/06 , C07C13/62 , C09K2211/1007 , C09K2211/1011 , H01L51/0054 , H01L51/0058 , H01L51/5012 , H05B33/14
摘要： The present invention relates to novel organic electroluminescent compounds and display devices comprising the same. The organic electroluminescent compounds according to the present invention exhibit high luminous efficiency and excellent life property, so that an OLED device having very good operation life can be prepared therefrom.
摘要翻译：本发明涉及新颖的有机电致发光化合物和包含其的显示装置。根据本发明的有机电致发光化合物显示出高的发光效率和优异的寿命性质，从而可以制备具有非常好的使用寿命的OLED器件。

35. 发明授权

US07868401B2 Multibit electro-mechanical memory device having at least one cantilever electrode and at least one gate line and manufacturing method thereof 有权
标题翻译：具有至少一个悬臂电极和至少一个栅极线的多位机电存储器件及其制造方法
公开(公告)号：US07868401B2
公开(公告)日：2011-01-11
申请号：US12289851
申请日：2008-11-06
申请人： Ji-Myoung Lee , Min-Sang Kim , Sung-Min Kim , Keun-Hwi Cho
发明人： Ji-Myoung Lee , Min-Sang Kim , Sung-Min Kim , Keun-Hwi Cho
IPC分类号： H01L29/84 , H01L29/76 , H01L21/00 , G11C11/417
CPC分类号： G11C11/56 , B82Y10/00 , G11C13/025 , G11C23/00
摘要： Provided are a multibit electro-mechanical memory device and a method of manufacturing the same. The device may include at least one bit line in a first direction on a substrate; at least one gate line and at least one lower word line in parallel by a given interval and in a second direction intersecting the first direction on the at least one bit line; at least one contact pad adjacent to the at least one gate line on the at least one bit line; and at least one cantilever electrode coupled to the at least one contact pad, configured to float with a void above and beneath the at least one cantilever electrode and configured to curve in a third direction vertical to the first and second directions.
摘要翻译：提供了一种多位机电存储器件及其制造方法。器件可以在衬底上包括沿第一方向的至少一个位线; 至少一个栅极线和至少一个下部字线平行延伸给定的间隔，并且在与所述至少一个位线上的所述第一方向相交的第二方向上; 至少一个与所述至少一条位线上的所述至少一条栅极线相邻的接触焊盘; 以及耦合到所述至少一个接触垫的至少一个悬臂电极，其构造成在所述至少一个悬臂电极的上方和下方浮动，并且被配置为在垂直于所述第一和第二方向的第三方向上弯曲。

36. 发明授权

US07803697B2 Highly integrated semiconductor device and method of fabricating the same 有权
标题翻译：高度集成的半导体器件及其制造方法
公开(公告)号：US07803697B2
公开(公告)日：2010-09-28
申请号：US11600719
申请日：2006-11-17
申请人： Sung-Min Kim , Eun-Jung Yun
发明人： Sung-Min Kim , Eun-Jung Yun
IPC分类号： H01L21/20
CPC分类号： H01L27/24
摘要： A method of fabricating a semiconductor device includes sequentially forming a first pattern and a second pattern on a substrate, the second pattern being a non-single-crystalline semiconductor stacked on the first pattern, wherein a portion of the substrate is exposed adjacent to the first and second patterns, forming a non-single-crystalline semiconductor layer on the substrate, the semiconductor layer contacting the second pattern and the exposed portion of the substrate, and, using the substrate as a seed layer, changing the crystalline state of the semiconductor layer to be single-crystalline and changing the crystalline state of the second pattern to be single-crystalline.
摘要翻译：一种制造半导体器件的方法包括在衬底上顺序地形成第一图案和第二图案，第二图案是堆叠在第一图案上的非单晶半导体，其中衬底的一部分暴露在与第一图案相邻的第一图案和第二图案，在衬底上形成非单晶半导体层，与第二图案接触的半导体层和衬底的暴露部分，并且使用衬底作为种子层，改变半导体层的结晶状态为单晶，并将第二图案的结晶状态改变为单晶。

37. 发明申请

US20100197099A1 SCHOTTKY BARRIER FiNFET DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：肖特基屏障器件及其制造方法
公开(公告)号：US20100197099A1
公开(公告)日：2010-08-05
申请号：US12759290
申请日：2010-04-13
申请人： Sung-Min Kim , Eun-Jung Yun , Dong-Won Kim
发明人： Sung-Min Kim , Eun-Jung Yun , Dong-Won Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/41791 , H01L29/66795 , H01L29/7839 , H01L29/78618 , H01L29/78684
摘要： A Schottky barrier FinFET device and a method of fabricating the same are provided. The device includes a lower fin body provided on a substrate. An upper fin body having first and second sidewalls which extend upwardly from a center of the lower fin body and face each other is provided. A gate structure crossing over the upper fin body and covering an upper surface of the upper fin body and the first and second sidewalls is provided. The Schottky barrier FinFET device includes a source and a drain which are formed on the sidewalls of the upper fin body adjacent to sidewalls of the gate structure and made of a metal material layer formed on an upper surface of the lower fin body positioned at both sides of the upper fin body, and the source and drain form a Schottky barrier to the lower and upper fin bodies.
摘要翻译：提供肖特基势垒FinFET器件及其制造方法。该装置包括设置在基板上的下部翅片体。提供具有从下翅片体的中心向上延伸并彼此面对的第一和第二侧壁的上翅片本体。提供了一种跨越上翅片体并覆盖上翅片体的上表面和第一和第二侧壁的门结构。肖特基势垒FinFET器件包括源极和漏极，其形成在与鳍结构的侧壁相邻的上翅片体的侧壁上，并且由形成在位于两侧的下翅片体的上表面上的金属材料层并且源极和漏极对下鳍体和上鳍体形成肖特基势垒。

38. 发明申请

US20100148260A1 SEMICONDUCTOR DEVICE INCLUDING A CRYSTAL SEMICONDUCTOR LAYER, ITS FABRICATION AND ITS OPERATION 有权
标题翻译：半导体器件，包括晶体半导体层，其制造及其操作
公开(公告)号：US20100148260A1
公开(公告)日：2010-06-17
申请号：US12710378
申请日：2010-02-23
申请人： Sung-Min Kim , Eun-Jung Yun
发明人： Sung-Min Kim , Eun-Jung Yun
IPC分类号： H01L29/786
CPC分类号： H01L21/02667 , H01L21/02639 , H01L21/2026 , H01L27/108 , H01L27/10802 , H01L27/10826 , H01L27/10879 , H01L29/66795 , H01L29/785
摘要： In one embodiment, a method of fabricating a semiconductor device having a crystalline semiconductor layer includes preparing a semiconductor substrate and forming a preliminary active pattern on the semiconductor substrate. The preliminary active pattern includes a barrier pattern and a non-single crystal semiconductor pattern. A sacrificial non-single crystal semiconductor layer covers the preliminary active pattern and the semiconductor substrate. By crystallizing the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern, using the semiconductor substrate as a seed layer, the sacrificial non-single crystal semiconductor layer and the non-single crystal semiconductor pattern are changed to a sacrificial crystalline semiconductor layer and a crystalline semiconductor pattern, respectively. The crystalline semiconductor pattern and the barrier pattern constitute an active pattern. The sacrificial crystalline semiconductor layer is removed.
摘要翻译：在一个实施例中，制造具有晶体半导体层的半导体器件的方法包括制备半导体衬底并在半导体衬底上形成预活性图案。预活性图案包括阻挡图案和非单晶半导体图案。牺牲非单晶半导体层覆盖预活性图案和半导体衬底。通过使牺牲非单晶半导体层和非单晶半导体图案结晶，使用半导体衬底作为晶种层，将牺牲非单晶半导体层和非单晶半导体图案改变为牺牲晶体半导体层和晶体半导体图案。晶体半导体图案和势垒图案构成活性图案。去除牺牲晶体半导体层。

39. 发明申请

US20100129976A1 Methods of Fabricating Electromechanical Non-Volatile Memory Devices 失效
标题翻译：制造机电非易失性存储器件的方法
公开(公告)号：US20100129976A1
公开(公告)日：2010-05-27
申请号：US12693783
申请日：2010-01-26
申请人： Eun Jung Yun , Sung-Young Lee , Min-Sang Kim , Sung-Min Kim
发明人： Eun Jung Yun , Sung-Young Lee , Min-Sang Kim , Sung-Min Kim
IPC分类号： H01L21/02
CPC分类号： H01L27/10 , G11C23/00
摘要： Electromechanical non-volatile memory devices are provided including a semiconductor substrate having an upper surface including insulation characteristics. A first electrode pattern is provided on the semiconductor substrate. The first electrode pattern exposes portions of a surface of the semiconductor substrate therethrough. A conformal bit line is provided on the first electrode pattern and the exposed surface of semiconductor substrate. The bit line is spaced apart from a sidewall of the first electrode pattern and includes a conductive material having an elasticity generated by a voltage difference. An insulating layer pattern is provided on an upper surface of the bit line located on the semiconductor substrate. A second electrode pattern is spaced apart from the bit line and provided on the insulating layer pattern. The second electrode pattern faces the first electrode pattern. Related methods are also provided.
摘要翻译：提供了包括具有包括绝缘特性的上表面的半导体衬底的机电非易失性存储器件。第一电极图案设置在半导体衬底上。第一电极图案暴露半导体衬底的表面的部分通过其中。在第一电极图案和半导体衬底的暴露表面上提供保形位线。位线与第一电极图案的侧壁间隔开，并且包括具有由电压差产生的弹性的导电材料。绝缘层图案设置在位于半导体衬底上的位线的上表面上。第二电极图案与位线间隔开并设置在绝缘层图案上。第二电极图案面向第一电极图案。还提供了相关方法。

40. 发明授权

US07662720B2 3-Dimensional flash memory device and method of fabricating the same 有权
标题翻译： 3维闪存器件及其制造方法
公开(公告)号：US07662720B2
公开(公告)日：2010-02-16
申请号：US12111633
申请日：2008-04-29
申请人： Sung-Min Kim , Eun-Jung Yun , Dong-Won Kim , Jae-Man Yoon
发明人： Sung-Min Kim , Eun-Jung Yun , Dong-Won Kim , Jae-Man Yoon
IPC分类号： H01L21/311
CPC分类号： H01L27/11568 , H01L27/115 , H01L29/792 , H01L29/7923 , H01L29/7926
摘要： In an embodiment, a 3-dimensional flash memory device includes: a gate extending in a vertical direction on a semiconductor substrate; a charge storing layer surrounding the gate; a silicon layer surrounding the charge storing layer; a channel region vertically formed in the silicon layer; and source/drain regions vertically formed on both sides of the channel region in the silicon layer. Integration can be improved by storing data in a 3-dimensional manner; a 2-bit operation can be performed by providing transistors on both sides of the gate.
摘要翻译：在一个实施例中，3维快闪存储器件包括：在半导体衬底上沿垂直方向延伸的栅极; 围绕门的电荷存储层; 围绕电荷存储层的硅层; 在所述硅层中垂直形成的沟道区; 以及垂直形成在硅层中的沟道区两侧的源/漏区。可以通过以三维方式存储数据来提高集成度; 可以通过在栅极的两侧提供晶体管来执行2位操作。

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