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    • 31. 发明授权
    • Wheeled folding tray cart with safety device and method
    • US11208132B2
    • 2021-12-28
    • US16246460
    • 2019-01-12
    • Jack Chen
    • Jack Chen
    • B62B3/02A47B43/00
    • The invention is a wheeled folding tray cart and method. The wheeled folding tray cart comprises a collapsible wheeled framework pivotally supporting a set of split shelves, each split shelf comprises a pair of half shelves. The wheeled folding tray cart moves between an open operating position wherein the set of split shelves are held in spaced-apart, stacked, horizontal orientation within the collapsible wheeled framework and a closed storage position wherein the collapsible wheeled framework is collapsed in manner to move each half shelf pair into an accordion-like, inverted “V”-shaped or accordion like configuration. An extension coiled spring attached to the collapsible wheeled framework assists in the movement of the wheeled folding tray cart between open operating position and the closed storage position. A sheath encloses at least a portion of the spring to provide resistance to the spring's movement to limit potential operator exposure to pinch injuries.
    • 32. 发明授权
    • Method and apparatus for processing bevel edge
    • 斜边加工方法及装置
    • US08562750B2
    • 2013-10-22
    • US12640926
    • 2009-12-17
    • Jack ChenYunsang Kim
    • Jack ChenYunsang Kim
    • B08B7/04
    • H01L21/02274C23C16/0245C23C16/04C23C16/509H01L21/02087H01L21/02115H01L21/3083H01L21/31144
    • A method and apparatus for processing a bevel edge is provided. A substrate is placed in a bevel processing chamber and a passivation layer is formed on the substrate only around a bevel region of the substrate using a passivation plasma confined in a peripheral region of the bevel processing chamber. The substrate may undergo a subsequent semiconductor process, during which the bevel edge region of the substrate is protected by the passivation layer. Alternatively, the passivation layer may be patterned using a patterning plasma formed in an outer peripheral region of the processing chamber, the patterning plasma being confined by increasing plasma confinement. The passivation layer on outer edge portion of the bevel region is removed, while the passivation layer on an inner portion of the bevel region is maintained. The bevel edge of the substrate may be cleaned using the patterned passivation layer as a protective mask.
    • 提供了一种用于处理斜边的方法和装置。 将衬底放置在斜面处理室中,并且使用限制在斜面处理室的周边区域中的钝化等离子体在衬底的仅一个斜面区域周围形成钝化层。 衬底可以经历随后的半导体工艺,在此期间衬底的斜边缘区域被钝化层保护。 或者,可以使用在处理室的外围区域中形成的图案化等离子体对钝化层进行图案化,通过增加等离子体限制来限制图形化等离子体。 去除斜面区域的外边缘部分上的钝化层,同时保持斜面区域的内部部分上的钝化层。 可以使用图案化的钝化层作为保护掩模来清洁基底的斜边缘。