专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20130323151A1 MONOCHLOROSILANE, PROCESS AND APPARATUS FOR THE PREPARATION THEREOF 有权
标题翻译：单氯醚，其制备方法和装置
公开(公告)号：US20130323151A1
公开(公告)日：2013-12-05
申请号：US13985477
申请日：2012-01-19
申请人： Ekkehard Mueh , Hartwig Rauleder , Juergen Erwin Lang , Reinhold Schork
发明人： Ekkehard Mueh , Hartwig Rauleder , Juergen Erwin Lang , Reinhold Schork
IPC分类号： C01B33/107 , B01J31/02
CPC分类号： C01B33/1071 , B01J31/0274 , B01J31/0275 , C01B33/10773
摘要： The invention relates to a process for preparing monochlorosilane by reaction of monosilane and dichlorosilane in the presence of a catalyst. In the process of the invention, monochlorosilane is formed by comproportionation of monosilane and dichlorosilane. The invention further relates to the use of the monochlorosilane produced and also a plant for carrying out the process.
摘要翻译：本发明涉及一种在催化剂存在下通过甲硅烷和二氯硅烷反应制备一氯硅烷的方法。在本发明的方法中，单氯硅烷通过甲硅烷和二氯硅烷的比例形成。本发明还涉及所生产的一氯硅烷和用于进行该方法的植物的用途。

32. 发明申请

US20120214005A1 METHOD FOR PRODUCING HYDRIDOSILANES 有权
标题翻译：生产水合物的方法
公开(公告)号：US20120214005A1
公开(公告)日：2012-08-23
申请号：US13504331
申请日：2010-11-08
申请人： Stephan Wieber , Matthias Patz , Martin Trocha , Hartwig Rauleder , Ekkehard Mueh , Harald Stueger , Christoph Walkner
发明人： Stephan Wieber , Matthias Patz , Martin Trocha , Hartwig Rauleder , Ekkehard Mueh , Harald Stueger , Christoph Walkner
IPC分类号： B32B9/04 , C01B33/04
CPC分类号： C01B33/04 , C01B33/043 , C01B33/10773 , Y10T428/31663
摘要： The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SinX2n+2 (with n≧3 and X═F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'aR″bYc with a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R′ and/or R″ are —C1-C12 alkyl, —C1-C12 aryl, —C1-C12 aralkyl, —C1-C12 aminoalkyl, —C1-C12 aminoaryl, —C1-C12 aminoaralkyl, and/or two or three groups R, R′ and R″ (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R′ or R″ is unequal —CH3 and/or wherein bb) R and R′ and/or R″' (if c=1) are —C1-C12 alkylene, —C1-C12 arylene, —C1-C12 aralkylene, —C1-C12 heteroalkylene, —C1-C12 heteroarylene, —C1-C12 heteroaralkylene and/or —N═, or cc) (if a=b=c=0) R═≡C-R′″ (with R′″═—C1-C10 alkyl, —C1-C10 aryl and/or —C1-C10 aralkyl), while forming a mixture comprising at least one halosilane of the generic formula SimX2m+2 (with m>n and X═F, Cl, Br and/or I) and SiX4 (with X═F, Cl, Br and/or I), and b) hydrogenating the at least one halosilane of the generic formula SimH2m+2 while forming a hydridosilane of the generic formula SimH2m+2. The invention also relates to the hydridosilanes producible according to said method and to their use
摘要翻译：本发明涉及一种由卤代硅烷生产氢硅烷的方法，其通过以下步骤：a）使i）至少一种通式为SinX2n + 2（n≥3，X = F，Cl，Br和/或I）的卤代硅烷与ii） a = 0或1，b = 0或1，c = 0或1和式（I）的通式NRR'aR“bYc的至少一种催化剂，其中aa）R，R'和/或R” 是-C 1 -C 12烷基，-C 1 -C 12芳基，-C 1 -C 12芳烷基，-C 1 -C 12氨基烷基，-C 1 -C 12氨基芳基，-C 1 -C 12氨基烷基和/或两个或三个基团R，R'和R “（如果c = 0）一起形成包括N的环状或双环，杂脂族或杂芳族体系，条件是至少一个基团R，R'或R”不等于-CH 3和/或其中bb）R和R' 和/或R“'（如果c = 1）是-C 1 -C 12亚烷基，-C 1 -C 12亚芳基，-C 1 -C 12亚芳基，-C 1 -C 12杂亚烷基，-C 1 -C 12亚杂芳基，-C 1 -C 12杂亚烷基和/ 或-N =或cc）（如果a = b = c = 0）R≡≡CR'“（其中R'”= C 1 -C 10烷基，-C 1 -C 10芳基和/或-C 1 -C 10芳烷基），同时形成包含通式SimX2m + 2（具有m> n和X = F，Cl，Br和/或I）的至少一种卤代硅烷和SiX 4（具有X = F，Cl，Br和 /或I），和b）在形成通式SimH 2 m + 2的氢硅烷的同时使通式SimH 2 m + 2的至少一种卤代硅烷氢化。本发明还涉及根据所述方法可生产的氢硅石及其用途

33. 发明授权

US08246925B2 Processing of chlorosilane flows containing boron 有权
标题翻译：加工含硼的氯硅烷流程
公开(公告)号：US08246925B2
公开(公告)日：2012-08-21
申请号：US12528087
申请日：2008-01-22
申请人： Christoph Schwarz , Dorothea Schwarz , Hartwig Rauleder , Ingo Pauli , Andreas Nelte , Harald Seiler
发明人： Christoph Schwarz , Dorothea Schwarz , Hartwig Rauleder , Ingo Pauli , Andreas Nelte , Harald Seiler
IPC分类号： C01B33/08
CPC分类号： B01D3/143 , C01B33/10778
摘要： The invention relates to a method for yielding boron-depleted chlorosilanes from a chlorosilane mixture containing boron by means of separation by distillation of a boron-enriched distillation flow. The invention further relate to a device for yielding boron-depleted chlorosilanes from a chlorosilane mixture containing boron.
摘要翻译：本发明涉及通过蒸馏富硼蒸馏流分离从含有硼的氯硅烷混合物中产生贫硼的氯硅烷的方法。本发明还涉及从含有硼的氯硅烷混合物中产生贫硼的氯硅烷的装置。

34. 发明申请

US20110184205A1 REMOVAL OF EXTRANEOUS METALS FROM SILICON COMPOUNDS BY ADSORPTION AND/OR FILTRATION 有权
标题翻译：通过吸附和/或过滤从硅化合物中去除非常金属
公开(公告)号：US20110184205A1
公开(公告)日：2011-07-28
申请号：US13121702
申请日：2009-10-13
申请人： Hartwig Rauleder , Ekkehard Mueh
发明人： Hartwig Rauleder , Ekkehard Mueh
IPC分类号： C07F7/02
CPC分类号： C07F7/20
摘要： The invention relates to a process for treating a composition containing silicon compounds, especially organosilanes and/or inorganic silanes, and at least one extraneous metal and/or a compound containing extraneous metal, wherein the composition is contacted with at least one adsorbent and/or a first filter and then a composition in which the content of the extraneous metal and/or of the compound containing extraneous metal has been reduced is obtained. The invention further relates to the use of organic resins, activated carbon, silicates and/or zeolites and/or else of at least one filter with small pore sizes to reduce the level of the compounds mentioned.
摘要翻译：本发明涉及一种处理包含硅化合物，特别是有机硅烷和/或无机硅烷的组合物和至少一种外来金属和/或含有外来金属的化合物的方法，其中所述组合物与至少一种吸附剂和/或然后获得第一过滤器，然后获得其中外来金属和/或含有外来金属的化合物的含量已经被还原的组合物。本发明还涉及使用有机树脂，活性炭，硅酸盐和/或沸石和/或至少一种具有小孔径的过滤器以降低所述化合物的含量。

35. 发明申请

US20100320072A1 PROCESSING OF CHLOROSILANE FLOWS CONTAINING BORON 有权
标题翻译：含有硼的氯仿流体的加工
公开(公告)号：US20100320072A1
公开(公告)日：2010-12-23
申请号：US12528087
申请日：2008-01-22
申请人： Christoph Schwarz , Dorothea Schwarz , Hartwig Rauleder , Ingo Pauli , Andreas Nelte , Harald Seiler
发明人： Christoph Schwarz , Dorothea Schwarz , Hartwig Rauleder , Ingo Pauli , Andreas Nelte , Harald Seiler
IPC分类号： B01D3/00 , C01B33/107
CPC分类号： B01D3/143 , C01B33/10778
摘要： The invention relates to a method for yielding boron-depleted chlorosilanes from a chlorosilane mixture containing boron by means of separation by distillation of a boron-enriched distillation flow. The invention further relate to a device for yielding boron-depleted chlorosilanes from a chlorosilane mixture containing boron.
摘要翻译：本发明涉及通过蒸馏富硼蒸馏流分离从含有硼的氯硅烷混合物中产生贫硼的氯硅烷的方法。本发明还涉及从含有硼的氯硅烷混合物中产生贫硼的氯硅烷的装置。

36. 发明申请

US20090020413A1 Process and apparatus for purifying silicon tetrachloride or germanium tetrachloride containing hydrogen compounds 有权
标题翻译：用于纯化含有氢化合物的四氯化硅或四氯化锗的方法和装置
公开(公告)号：US20090020413A1
公开(公告)日：2009-01-22
申请号：US11659084
申请日：2005-06-10
申请人： Hanns-Peter Popp , Rainer Nicolai , Hartwig Rauleder , Juergen Lang
发明人： Hanns-Peter Popp , Rainer Nicolai , Hartwig Rauleder , Juergen Lang
IPC分类号： B01D3/00
CPC分类号： C01B33/10778 , B01J19/088 , B01J2219/00853 , B01J2219/0093 , B01J2219/0809 , B01J2219/0815 , B01J2219/083 , B01J2219/0841 , B01J2219/0847 , B01J2219/0849 , B01J2219/0896 , C01G17/04
摘要： The invention relates to a process for the purification's of silicon tetrachloride or germanium tetrachloride contaminated with at least one hydrogen-containing compound, in which the silicon tetrachloride or germanium tetrachloride to be purified is treated in a targeted manner by means of a cold plasma and purified silicon tetrachloride or germanium tetrachloride is isolated from the phase which has been treated in this way. The present invention further relates to an apparatus for carrying out the process of the invention, which comprises a stock and vaporization unit for silicon or germanium tetrachloride (4.1 or 5.1) which is connected via a connecting line with the inlet of the reactor (4.3 or 5.3) with control unit (4.4 or 5.4) for producing the dielectrically hindered discharges whose outlet leads via a pipe either directly or indirectly via at least one further reactor (5.5) to a condensation unit (4.5 or 5.11) with downstream collection vessel (4.6 or 5.12) which is connected via an offtake line (4.6.2 or 5.12.1) to a distillation unit (4.8 or 5.13) and, if appropriate, is equipped with a feed line (4.6.1) to the unit (4.1).
摘要翻译：本发明涉及一种用至少一种含氢化合物污染的四氯化硅或四氯化锗的净化方法，其中待冷却的四氯化硅或四氯化锗将以冷等离子体的方式以目标方式进行处理从已经以这种方式处理的相中分离出四氯化硅或四氯化锗。本发明还涉及一种用于实施本发明方法的装置，其包括用于硅或四氯化锗（4.1或5.1）的原料和蒸发单元，其通过连接管线与反应器的入口（4.3或控制单元（4.4或5.4）用于产生介电阻碍排放物，其出口通过管道直接或间接地通过至少一个另外的反应器（5.5）引导到具有下游收集容器（4.6）的冷凝单元（4.5或5.11）或5.12），其通过出口管线（4.6.2或5.12.1）连接到蒸馏单元（4.8或5.13），并且如果合适的话，配备有到该单元（4.1）的进料管线（4.6.1）。

37. 发明申请

US20080289690A1 Process For Producing a Silicon Film on a Substrate Surface By Vapor Deposition 审中-公开
标题翻译：通过气相沉积在衬底表面上生产硅膜的方法
公开(公告)号：US20080289690A1
公开(公告)日：2008-11-27
申请号：US12097645
申请日：2006-12-07
申请人： Raymund Sonnenschein , Hartwig Rauleder , Hans Juergen Hoene , Stefan Reber , Norbert Schillinger
发明人： Raymund Sonnenschein , Hartwig Rauleder , Hans Juergen Hoene , Stefan Reber , Norbert Schillinger
IPC分类号： H01L31/0264 , H01L31/18 , C23C16/42
CPC分类号： H01L31/03921 , C23C16/24 , H01L31/04 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： The present invention relates to a process for producing a silicon film on a substrate surface by vapor deposition, starting from a silicon-based precursor, characterized in that the precursor used is silicon tetrachloride. The present invention also relates to thin-film solar cells or crystalline silicon thin-film solar cells obtainable by the process according to the invention. The invention also relates to the use of silicon tetrachloride for producing a film deposited on a substrate from the vapor phase.
摘要翻译：本发明涉及从硅系前驱体开始，通过气相沉积在基板表面上制造硅膜的方法，其特征在于所用的前体是四氯化硅。本发明还涉及通过本发明的方法获得的薄膜太阳能电池或晶体硅薄膜太阳能电池。本发明还涉及使用四氯化硅来制造从气相沉积在基材上的膜。

38. 发明授权

US07204963B2 Process for the separation of chlorosilanes from gas streams 有权
标题翻译：从气流中分离氯硅烷的方法
公开(公告)号：US07204963B2
公开(公告)日：2007-04-17
申请号：US10715359
申请日：2003-11-19
申请人： Hartwig Rauleder , Franz-Michael Bollenrath , Harald Seiler , Mieczyslaw Kuzma , Christoph Koopmann
发明人： Hartwig Rauleder , Franz-Michael Bollenrath , Harald Seiler , Mieczyslaw Kuzma , Christoph Koopmann
IPC分类号： B01D50/00 , C01B33/08
CPC分类号： C01B33/107 , B01D53/68
摘要： Chlorosilanes are continuously removed from a gas stream in an apparatus in which the gas stream is treated in a first stage with water vapor in the gas phase, and in a second stage with a liquid, aqueous phase.
摘要翻译：在气相中的气流中，气流在气相中被水蒸汽处理，第二阶段用液态水相处理，在气流中连续除去氯硅烷。

39. 发明授权

US06750361B2 Cleavage of cyclic organosilanes in the preparation of aminofunctional organoalkoxysilanes 失效
标题翻译：在制备氨基官能有机烷氧基硅烷时循环有机硅烷的裂解
公开(公告)号：US06750361B2
公开(公告)日：2004-06-15
申请号：US10159122
申请日：2002-06-03
申请人： Frank Kropfgans , Hartwig Rauleder
发明人： Frank Kropfgans , Hartwig Rauleder
IPC分类号： C07F700
CPC分类号： C07F7/1892
摘要： An aminofunctional organoalkoxysilane of formula I R2N—(CH2)y—Si(OR1)3−nR2n (I), wherein the R groups bonded to nitrogen are identical or different and each individual R group is hydrogen, an alkyl radical having from 1 to 4 carbon atoms, an aryl radical or an arylalkyl radical, R1 is an alkyl radical having from 1 to 8 carbon atoms or an aryl radical, R2 is an alkyl radical having from 1 to 8 carbon atoms or an aryl radical, y is 2, 3 or 4 and n is 0, 1 or 2, is prepared by a process comprising: reacting a chlorofunctional organoalkoxysilane of formula II Cl—(CH2)y—Si(OR1)3−nR2n (II), wherein R1, R2, y and n are as defined above, with ammonia or an organic amine of formula III HNR2 (III), wherein the two R groups are identical or different and each is defined as described above; separating organic amine hydrochloride or ammonium chloride by-product which is formed in the reaction; distilling the resulting crude product, thereby preparing an aminofunctional organoalkoxysilane or the product fraction of an aminofunctional organoalkoxysilane; and treating the aminofunctional organoalkoxysilane or the product fraction of an aminofunctional organoalkoxysilane with an alcohol.
摘要翻译：在与氮键合的R基团中的式I的氨基官能有机烷氧基硅烷是相同或不同的，每个单独的R基团是氢，具有1至4个碳原子的烷基，芳基或芳基烷基，R 1是烷基具有1至8个碳原子的基团或芳基，R 2是具有1至8个碳原子的烷基或芳基，y为2,3或4，n为0,1或2，为通过以下方法制备，该方法包括：使式II的氯官能有机烷氧基硅烷，其中R 1，R 2，y和n如上定义，与氨或式III的有机胺反应，其中两个R基团相同或不同，定义如上所述;分离在反应中形成的有机胺盐酸盐或氯化铵副产物;蒸馏所得粗产物，从而制备氨基官能有机烷氧基硅烷或氨基官能有机烷氧基硅烷的产物级分; 用醇将氨基官能的有机烷氧基硅烷或氨基官能的有机烷氧基硅烷的产物级分加成。

40. 发明授权

US06291698B1 Process for preparing vinyl chlorosilanes 有权
标题翻译：制备乙烯基氯硅烷的方法
公开(公告)号：US06291698B1
公开(公告)日：2001-09-18
申请号：US09556403
申请日：2000-04-24
申请人： Stefan Bade , Bernt Kesper , Robert Koell , Hartwig Rauleder , Uwe Schoen
发明人： Stefan Bade , Bernt Kesper , Robert Koell , Hartwig Rauleder , Uwe Schoen
IPC分类号： C07F708
CPC分类号： C07F7/122
摘要： The invention relates to a process for preparing vinyl chlorosilanes, that includes thermally and non-catalytically reacting chlorosilane with vinyl chloride at a temperature of 550 to 700° C. by flowing the chlorosilane and vinyl chloride through a ring-gap space in a ring-gap reactor to produce a reaction gas; the ring-gap space having a cross-sectional area and a volume; and, after the flowing, further reacting, adiabatically, the reaction gas in a second zone to produce a hot reaction gas that contains vinylchiorosilane; wherein the second zone has a cross-sectional area that is greater than the cross-sectional area of the ring-gap space; and wherein the second zone has a volume that is in a ratio to the volume of the ring-gap space of 0.15:1 to 1.5:1. The invention also provides an apparatus for carrying out the above process.
摘要翻译：本发明涉及一种制备乙烯基氯硅烷的方法，其包括在550-700℃的温度下使氯代硅烷与氯乙烯进行热和非催化反应，通过使氯代硅烷和氯乙烯通过环 - 间隙反应器产生反应气体; 所述环间隙具有横截面积和体积; 并且在流动之后，绝热地将第二区中的反应气体进行反应，以产生含有乙烯基氯硅烷的热反应气体; 其中所述第二区域具有大于所述环形间隙的横截面面积的横截面面积; 并且其中所述第二区域具有与所述环隙空间的体积的比率为0.15:1至1.5:1的体积。本发明还提供一种用于执行上述过程的装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式