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    • 35. 发明授权
    • Process for producing styrene base polymer
    • 制备苯乙烯基聚合物的方法
    • US5783646A
    • 1998-07-21
    • US899641
    • 1997-07-24
    • Hayato KiharaMasayuki Fujita
    • Hayato KiharaMasayuki Fujita
    • C08F2/02C08F2/38C08F12/08C08F2/00
    • C08F2/38C08F12/08
    • A styrene base polymer superior and well-balanced in mechanical strength and fluidity and also superior in heat resistance is industrially advantageously produced by a radical polymerization process comprising; (a) subjecting styrene or a styrene compound and a radical scavenger to thermal polymerization, (1) a concentration of the radical scavenger to styrene or the styrene compound being from 3.0.times.10.sup.-3 to 5.0.times.10.sup.-2 mol %, and (2) a polymerization temperature ranging from 100.degree. C. to 140.degree. C., provided that the concentration of the radical scavenger (C) and the polymerization temperature (T) satisfy the following formula, 100C +0.088T.ltoreq.13.8, and (b) continuing the polymerization to a polymerization conversion of from 40 to 85%.
    • 在机械强度和流动性方面优异且平衡良好且耐热性优异的苯乙烯基聚合物在工业上有利地通过自由基聚合方法制备,所述方法包括: (a)使苯乙烯或苯乙烯化合物和自由基清除剂进行热聚合,(1)自由基清除剂对苯乙烯或苯乙烯化合物的浓度为3.0×10 -3至5.0×10 -2摩尔%,和(2) 聚合温度范围为100℃至140℃,条件是自由基清除剂(C)和聚合温度(T)的浓度满足下式:100℃+0.088T≤13.8,和(b )继续聚合至40至85%的聚合转化率。
    • 39. 发明申请
    • PHOTOELECTRIC TRANSDUCER
    • 光电传感器
    • US20120273911A1
    • 2012-11-01
    • US13520126
    • 2010-12-17
    • Hiroaki ShigetaYuhji YashiroYuhsuke TsudaSusumu NodaMasayuki FujitaYoshinori Tanaka
    • Hiroaki ShigetaYuhji YashiroYuhsuke TsudaSusumu NodaMasayuki FujitaYoshinori Tanaka
    • H01L31/0232
    • H01L31/02327
    • A photoelectric transducer (10) including: a semiconductor layer (13); and a photonic crystal (21) formed inside the semiconductor layer, the photonic crystal being formed by providing nanorods (19) inside the semiconductor layer, each of the nanorods having a refractive index lower than that of a medium of the semiconductor layer, the nanorods being provided two-dimensionally and periodically at a pitch of not less than λ/4 nor more than λ, where λ is a wavelength of a peak of resonance caused by the photonic crystal, the photoelectric transducer satisfying the following formula: 0.2QV≦Qα≦5.4QV where Qv is (a) a Q value which indicates a magnitude of an effect of resonance caused by coupling between the photonic crystal and an external world and (b) in proportion to a reciprocal of a coefficient κV indicating a strength of the coupling between the photonic crystal and the external world, and Qa is (a) a Q value which indicates a magnitude of an effect of resonance caused by the medium of the semiconductor layer and (b) in proportion to a reciprocal of a coefficient αa of light absorption by the medium of the semiconductor layer. This allows an increase in light absorption ratio of a photoelectric transducer including a photonic crystal structure.
    • 一种光电变换器(10),包括:半导体层(13); 和形成在所述半导体层内的光子晶体(21),所述光子晶体通过在所述半导体层内部提供纳米棒(19)形成,所述纳米棒的折射率低于所述半导体层的介质的折射率,所述纳米棒 以不小于λ/ 4的间距不大于λ的间隔二维和周期地设置,其中λ是由光子晶体引起的共振峰的波长,光电传感器满足下式:0.2QV≦̸Qα&nlE 其中Qv是(a)Q值,其表示由光子晶体和外部世界之间的耦合引起的谐振的影响的大小,以及(b)与系数的倒数成比例,kgr; V表示强度 的光子晶体与外界之间的耦合,Qa是(a)Q值,其表示由半导体层的介质引起的共振效应的大小,(b)与 由半导体层的介质的光吸收系数αa的倒数。 这允许包括光子晶体结构的光电变换器的光吸收率增加。