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31. 发明申请

US20160149130A1 Two Stage Forming of Resistive Random Access Memory Cells 有权
标题翻译：电阻随机存取存储单元的两阶段形成
公开(公告)号：US20160149130A1
公开(公告)日：2016-05-26
申请号：US14552034
申请日：2014-11-24
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang , Federico Nardi
IPC分类号： H01L45/00 , G11C13/00
CPC分类号： G11C13/0069 , G11C13/0007 , G11C2013/0083 , G11C2013/009 , G11C2213/32 , G11C2213/33 , G11C2213/34 , G11C2213/56 , G11C2213/71 , G11C2213/77 , H01L27/2409 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145
摘要： Provided are memory cells, such as resistive random access memory (ReRAM) cells, each cell having multiple metal oxide layers formed from different oxides, and methods of manipulating and fabricating these cells. Two metal oxides used in the same cell have different dielectric constants, such as silicon oxide and hafnium oxide. The memory cell may include electrodes having different metals. Diffusivity of these metals into interfacing metal oxide layers may be different. Specifically, the lower-k oxide may be less prone to diffusion of the metal from the interfacing electrode than the higher-k oxide. The memory cell may be formed to different stable resistive levels and then resistively switched at these levels. Each level may use a different switching power. The switching level may be selected a user after fabrication of the cell and in, some embodiments, may be changed, for example, after switching the cell at a particular level.
摘要翻译：提供了诸如电阻随机存取存储器（ReRAM）单元的存储器单元，每个单元具有由不同氧化物形成的多个金属氧化物层，以及操纵和制造这些单元的方法。在同一电池中使用的两种金属氧化物具有不同的介电常数，例如氧化硅和氧化铪。存储单元可以包括具有不同金属的电极。这些金属在界面金属氧化物层中的扩散性可能是不同的。具体而言，低K氧化物可能比较高K氧化物更不易于从界面电极扩散金属。可以将存储单元形成为不同的稳定电阻水平，然后在这些电平下进行电阻切换。每个级别可能使用不同的开关电源。可以在单元的制造之后选择用户的切换级别，并且在一些实施例中，可以例如在将单元切换到特定级别之后进行改变。

32. 发明授权

US09276203B2 Resistive switching layers including Hf-Al-O 有权
标题翻译：电阻式开关层包括Hf-Al-O
公开(公告)号：US09276203B2
公开(公告)日：2016-03-01
申请号：US13721406
申请日：2012-12-20
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Chien-Lan Hsueh , Randall J. Higuchi , Tim Minvielle , Jinhong Tong , Yun Wang , Takeshi Yamaguchi
IPC分类号： H01L29/00 , H01L47/00 , H01L29/02 , H01L29/04 , H01L29/06 , H01L47/02 , H01L45/00 , H01L27/24
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1616
摘要： Provided are resistive random access memory (ReRAM) cells having switching layers that include hafnium, aluminum, oxygen, and nitrogen. The composition of such layers is designed to achieve desirable performance characteristics, such as low current leakage as well as low and consistent switching currents. In some embodiments, the concentration of nitrogen in a switching layer is between about 1 and 20 atomic percent or, more specifically, between about 2 and 5 atomic percent. Addition of nitrogen helps to control concentration and distribution of defects in the switching layer. Also, nitrogen as well as a combination of two metals helps with maintaining this layer in an amorphous state. Excessive amounts of nitrogen reduce defects in the layer such that switching characteristics may be completely lost. The switching layer may be deposited using various techniques, such as sputtering or atomic layer deposition (ALD).
摘要翻译：提供了具有包括铪，铝，氧和氮的开关层的电阻随机存取存储器（ReRAM）单元。这些层的组成被设计成实现期望的性能特性，例如低电流泄漏以及低和一致的开关电流。在一些实施方案中，开关层中氮的浓度在约1至20原子百分比之间，或更具体地在约2至5原子百分比之间。添加氮有助于控制开关层缺陷的浓度和分布。此外，氮气以及两种金属的组合有助于将该层保持在非晶状态。过量的氮减少了层中的缺陷，使得开关特性可能完全丧失。可以使用诸如溅射或原子层沉积（ALD）的各种技术来沉积切换层。

33. 发明申请

US20160028003A1 SHAPING RERAM CONDUCTIVE FILAMENTS BY CONTROLLING GRAIN-BOUNDARY DENSITY 有权
标题翻译：通过控制颗粒边界密度形成RERAM导电膜
公开(公告)号：US20160028003A1
公开(公告)日：2016-01-28
申请号：US14338949
申请日：2014-07-23
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L27/24 , H01L27/2409 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/165 , H01L45/1658
摘要： Filament size and shape in a ReRAM stack can be controlled by doping layers of a variable-resistance stack to change the crystallization temperature. This changes the density of the grain boundaries that form during annealing and provide minimal-resistance paths for the migration of charged defects. Hf, Zr, or Ti decreases the crystallization temperature and narrows the filament, while Si or N increases the crystallization temperature and widens the filament. Tapered filaments are of interest: The narrow tip requires little energy to break and re-form, enabling the cell to operate at low power, yet the wider body and base are insensitive to entropic behavior of small numbers of defects, enabling the cell to retain data for long periods.
摘要翻译：可以通过掺杂可变电阻堆叠层来控制ReRAM堆叠中的长丝尺寸和形状来改变结晶温度。这改变了在退火期间形成的晶界的密度，并且为带电缺陷的迁移提供了最小的电阻路径。 Hf，Zr或Ti会降低结晶温度并使丝变窄，而Si或N则会增加结晶温度并加长丝。锥形丝是令人感兴趣的：窄尖端需要很少的能量来破坏和重新形成，使得细胞能够以低功率运行，但是更宽的身体和基部对少数缺陷的熵行为不敏感，使细胞保留长时间的数据。

34. 发明授权

US09224951B1 Current-limiting electrodes 有权
标题翻译：限流电极
公开(公告)号：US09224951B1
公开(公告)日：2015-12-29
申请号：US14336652
申请日：2014-07-21
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang , Federico Nardi , Milind Weling
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L45/145 , H01L27/24 , H01L27/2409 , H01L45/04 , H01L45/08 , H01L45/1246 , H01L45/1253 , H01L45/1608 , H01L45/1625 , H01L45/1641
摘要： A resistive-switching memory (ReRAM cell) has a current-limiting electrode layer that combines the functions of an embedded resistor, an outer electrode, and an intermediate electrode, reducing the thickness of the ReRAM stack and simplifying the fabrication process. The materials include compound nitrides of a transition metal and one of aluminum, boron, or silicon. In experiments with tantalum silicon nitride, peak yield in the desired resistivity range corresponded to ˜24 at % silicon and ˜32 at % nitrogen, believed to optimize the trade-off between inhibiting TaSi2 formation and minimizing nitrogen diffusion. A binary metal nitride may be formed at one or more of the interfaces between the current-limiting electrode and neighboring layers such as metal-oxide switching layers.
摘要翻译：电阻式开关存储器（ReRAM单元）具有限流电极层，其结合了嵌入式电阻器，外部电极和中间电极的功能，减小了ReRAM堆叠的厚度并简化了制造工艺。这些材料包括过渡金属和铝，硼或硅之一的化合物氮化物。在使用钽氮化硅的实验中，所需电阻率范围内的峰值产率对应于〜24at％的硅和〜32at％的氮，据信可以优化抑制TaSi2形成和最小化氮扩散之间的折衷。二元金属氮化物可以形成在限流电极和相邻层之间的界面中的一个或多个处，例如金属氧化物开关层。

35. 发明授权

US09178140B2 Morphology control of ultra-thin MeOx layer 有权
标题翻译：超薄MeOx层的形态控制
公开(公告)号：US09178140B2
公开(公告)日：2015-11-03
申请号：US14624209
申请日：2015-02-17
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Federico Nardi , Yun Wang
IPC分类号： H01L29/02 , H01L45/00 , H01L51/00 , H01L27/24
CPC分类号： H01L45/06 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/065 , H01L45/08 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/16 , H01L45/1616 , H01L51/0098
摘要： A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer.
摘要翻译：非易失性存储器件包含具有改进的器件切换性能和寿命的电阻式开关存储器元件及其形成方法。非易失性存储器件在衬底上具有第一层，在第一层上具有电阻性开关层，以及第二层。电阻开关层设置在第一层和第二层之间，电阻开关层包括与第一层的顶表面相同形态的材料。在ReRAM器件中形成非易失性存储元件的方法包括在第一层上形成电阻式开关层并形成第二层，使得电阻式开关层位于第一层和第二层之间。电阻开关层包括与第一层的顶表面形成相同形态的材料。

36. 发明申请

US20150311257A1 Resistive Random Access Memory Cells Having Shared Electrodes with Transistor Devices 有权
标题翻译：具有晶体管器件的共享电极的电阻随机存取存储器单元
公开(公告)号：US20150311257A1
公开(公告)日：2015-10-29
申请号：US14264280
申请日：2014-04-29
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Federico Nardi , Ryan C. Clarke , Tim Minvielle , Yun Wang
IPC分类号： H01L27/24 , H01L21/02 , H01L21/265 , H01L45/00 , H01L29/08
CPC分类号： H01L27/2463 , H01L21/02532 , H01L21/02595 , H01L21/265 , H01L27/2436 , H01L29/0847 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： Provided are resistive random access memory (ReRAM) cells having extended conductive layers operable as electrodes of other devices, and methods of fabricating such cells and other devices. A conductive layer of a ReRAM cell extends beyond the cell boundary defined by the variable resistance layer. The extended portion may be used a source or drain region of a FET that may control an electrical current through the cell or other devices. The extended conductive layer may be also operable as electrode of another resistive-switching cell or a different device. The extended conductive layer may be formed from doped silicon. The variable resistance layer of the ReRAM cell may be positioned on the same level as a gate dielectric layer of the FET. The variable resistance layer and the gate dielectric layer may have the same thickness and share common materials, though they may be differently doped.
摘要翻译：提供了具有可操作为其他器件的电极的延伸导电层的电阻随机存取存储器（ReRAM）单元，以及制造这样的单元和其它器件的方法。 ReRAM单元的导电层延伸超过由可变电阻层限定的单元边界。延伸部分可以用于可控制通过电池或其他装置的电流的FET的源极或漏极区域。扩展导电层也可以作为另一电阻式开关电池或不同器件的电极工作。延伸的导电层可以由掺杂的硅形成。 ReRAM单元的可变电阻层可以位于与FET的栅极电介质层相同的水平上。可变电阻层和栅极电介质层可以具有相同的厚度并且共享共同的材料，尽管它们可以是不同的掺杂。

37. 发明授权

US08980766B2 Sequential atomic layer deposition of electrodes and resistive switching components 有权
标题翻译：电极和电阻式开关元件的顺序原子层沉积
公开(公告)号：US08980766B2
公开(公告)日：2015-03-17
申请号：US14327774
申请日：2014-07-10
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang , Tony P. Chiang , Tim Minvielle , Takeshi Yamaguchi
IPC分类号： H01L21/68 , H01L45/00 , H01L27/24
CPC分类号： H01L45/145 , H01L27/2481 , H01L45/08 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/16 , H01L45/1616
摘要： Provided are methods of forming nonvolatile memory elements using atomic layer deposition techniques, in which at least two different layers of a memory element are deposited sequentially and without breaking vacuum in a deposition chamber. This approach may be used to prevent oxidation of various materials used for electrodes without a need for separate oxygen barrier layers. A combination of signal lines and resistive switching layers may be used to cap the electrodes and to minimize their oxidation. As such, fewer layers are needed in a memory element. Furthermore, atomic layer deposition allows more precise control of electrode thicknesses. In some embodiments, a thickness of an electrode may be less than 50 Angstroms. Overall, atomic layer deposition of electrodes and resistive switching layers lead to smaller thicknesses of entire memory elements making them more suitable for low aspect ratio features of advanced nodes.
摘要翻译：提供了使用原子层沉积技术形成非易失性存储元件的方法，其中存储元件的至少两个不同层顺次沉积并且在沉积室中不破坏真空。该方法可以用于防止用于电极的各种材料的氧化，而不需要单独的氧阻隔层。可以使用信号线和电阻开关层的组合来封盖电极并使其氧化最小化。因此，存储元件中需要更少的层。此外，原子层沉积允许更精确地控制电极厚度。在一些实施例中，电极的厚度可以小于50埃。总的来说，电极和电阻开关层的原子层沉积导致整个存储元件的较小厚度，使得它们更适合于高级节点的低纵横比特征。

38. 发明申请

US20150056749A1 Atomic Layer Deposition of Metal Oxide Materials for Memory Applications 有权
标题翻译：用于存储器应用的金属氧化物材料的原子层沉积
公开(公告)号：US20150056749A1
公开(公告)日：2015-02-26
申请号：US14506298
申请日：2014-10-03
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang , Tony P. Chiang , Vidyut Gopal , Imran Hashim , Dipankar Pramanik
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L45/145 , C23C16/40 , C23C16/45525 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L27/2463 , H01L45/08 , H01L45/1266 , H01L45/146 , H01L45/1608 , H01L45/1616
摘要： Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies. Therefore, the metal oxide film stacks have improved switching performance and reliability during memory cell applications compared to traditional hafnium oxide based stacks of previous memory cells.
摘要翻译：本发明的实施例一般涉及非易失性存储器件，例如ReRAM单元，以及用于制造这种存储器件的方法，其包括用于形成金属氧化物膜堆叠的优化的原子层沉积（ALD）工艺。金属氧化物膜堆叠包含设置在金属氧化物主体层上的金属氧化物耦合层，每个层具有不同的晶粒结构/尺寸。设置在金属氧化物层之间的界面有助于氧空位移动。在许多示例中，与垂直于电极界面延伸的体膜中的晶粒相反，界面是不对齐的晶粒界面，其包含平行于电极界面延伸的许多晶界。因此，氧空缺在切换期间被捕获和释放，而空位明显损失。因此，与以前的存储单元的传统的基于氧化铪的堆叠相比，金属氧化物膜堆叠在存储单元应用中具有改进的开关性能和可靠性。

39. 发明授权

US08872152B2 IL-free MIM stack for clean RRAM devices 有权
标题翻译：无IL的MIM堆栈，用于清理RRAM设备
公开(公告)号：US08872152B2
公开(公告)日：2014-10-28
申请号：US13714106
申请日：2012-12-13
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Federico Nardi , Yun Wang
IPC分类号： H01L47/00 , H01L45/00
CPC分类号： H01L45/146 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/16 , H01L45/1608
摘要： A nonvolatile memory device that contains a resistive switching memory element with improved device switching performance and lifetime, and methods of forming the same. A nonvolatile memory element includes a first electrode layer formed on a substrate, a resistive switching layer formed on the first electrode layer, and a second electrode layer. The resistive switching layer comprises a metal oxide and is disposed between the first electrode layer and the second electrode layer. The elemental metal selected for each of the first and second electrode layers is the same metal as selected to form the metal oxide resistive switching layer. The use of common metal materials within the memory element eliminates the growth of unwanted and incompatible native oxide interfacial layers that create undesirable circuit impedance.
摘要翻译：一种非易失性存储器件，其包含具有改进的器件切换性能和寿命的电阻式开关存储元件及其形成方法。非易失性存储元件包括形成在基板上的第一电极层，形成在第一电极层上的电阻开关层和第二电极层。电阻开关层包括金属氧化物，并且设置在第一电极层和第二电极层之间。为第一和第二电极层中的每一个选择的元素金属与所选择的金属相同，以形成金属氧化物电阻式开关层。在记忆元件内部使用普通金属材料消除了不希望的和不相容的天然氧化物界面层的生长，产生不希望的电路阻抗。

40. 发明申请

US20140192586A1 Resistive Random Access Memory Cells Having Variable Switching Characteristics 有权
标题翻译：具有可变开关特性的电阻随机存取存储单元
公开(公告)号：US20140192586A1
公开(公告)日：2014-07-10
申请号：US13738524
申请日：2013-01-10
申请人： INTERMOLECULAR INC. , KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC
发明人： Federico Nardi , Yun Wang
IPC分类号： G11C13/00 , H01L45/00
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/0083 , G11C2213/12 , G11C2213/15 , G11C2213/52 , G11C2213/71 , H01L27/2463 , H01L27/2481 , H01L45/06 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/149
摘要： Provided are resistive random access memory (ReRAM) cells forming arrays and methods of operating such cells and arrays. The ReRAM cells of the same array may have the same structure, such as have the same bottom electrodes, top electrodes, and resistive switching layers. Yet, these cells may be operated in a different manner. For example, some ReRAM cells may be restively switched using lower switching voltages than other cells. The cells may also have different data retention characteristics. These differences may be achieved by using different forming operations for different cells or, more specifically, flowing forming currents in different directions for different cells. The resulting conductive paths formed within the resistive switching layers are believed to switch at or near different electrode interfaces, i.e., within a so called switching zone. In some embodiments, a switching zone of a ReRAM cell may be changed even after the initial formation.
摘要翻译：提供形成阵列的电阻随机存取存储器（ReRAM）单元和操作这样的单元和阵列的方法。相同阵列的ReRAM单元可以具有相同的结构，例如具有相同的底部电极，顶部电极和电阻式开关层。然而，这些电池可以以不同的方式操作。例如，可以使用比其他单元更低的开关电压来重新切换一些ReRAM单元。细胞也可能具有不同的数据保留特征。这些差异可以通过对于不同的单元使用不同的成形操作来实现，或者更具体地，针对不同的单元流动形成不同方向的电流。形成在电阻开关层内的所得导电路径被认为在不同的电极接口处，即在所谓的开关区域内或附近切换。在一些实施例中，即使在初始形成之后，ReRAM单元的切换区也可能改变。

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