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31. 发明申请

US20060049768A1 Apparatus for measuring picture and lifetime of display panel 有权
标题翻译：用于测量显示面板的图像和使用寿命的设备
公开(公告)号：US20060049768A1
公开(公告)日：2006-03-09
申请号：US11176734
申请日：2005-07-07
申请人： Yong Suk Yang , Hye Yong Chu , Jeong Ik Lee , Ji Young Oh , Sang Hee Park , Chi Sun Hwang , Lee Mi Do , Sung Mook Chung , Mi Kyung Kim
发明人： Yong Suk Yang , Hye Yong Chu , Jeong Ik Lee , Ji Young Oh , Sang Hee Park , Chi Sun Hwang , Lee Mi Do , Sung Mook Chung , Mi Kyung Kim
IPC分类号： H05B37/02
CPC分类号： H04N17/04 , G02F1/1309 , G09G2320/043 , G09G2360/145 , H05B33/0896
摘要： Provided is an apparatus for measuring a picture and a lifetime of a display panel including: a chamber having at least one display panel for measurement disposed therein, and for uniformly maintaining temperature and humidity conditions of an inner portion; at least one camera installed in the chamber to obtain image signals of the display panel; a bias supply and measurement part for providing pulse bias voltage and current required to measure depending on control signals, and measuring the voltage and current to convert into digital data when the display panel is driven; a converter for converting the image signals obtained through the camera into digital data; and a control and data processing part for generating parameters by receiving the digital data from the bias supply and measurement part and the converter, and analyzing a lifetime of the display panel using the parameters.
摘要翻译：提供一种用于测量显示面板的图像和寿命的装置，包括：具有至少一个用于测量的显示面板的室，并且用于均匀地保持内部的温度和湿度条件; 至少一个相机安装在所述室中以获得所述显示面板的图像信号; 偏置电源和测量部件，用于提供根据控制信号测量所需的脉冲偏置电压和电流，以及在显示面板驱动时测量电压和电流转换为数字数据; 用于将通过照相机获得的图像信号转换成数字数据的转换器; 以及控制和数据处理部分，用于通过从偏置供应和测量部分和转换器接收数字数据来产生参数，以及使用参数分析显示面板的寿命。

32. 发明授权

US08409935B2 Method of manufacturing transparent transistor with multi-layered structures 有权
标题翻译：制造具有多层结构的透明晶体管的方法
公开(公告)号：US08409935B2
公开(公告)日：2013-04-02
申请号：US13590768
申请日：2012-08-21
申请人： Min Ki Ryu , Chi Sun Hwang , Chun Won Byun , Hye Yong Chu , Kyoung Ik Cho
发明人： Min Ki Ryu , Chi Sun Hwang , Chun Won Byun , Hye Yong Chu , Kyoung Ik Cho
IPC分类号： H01L21/00
CPC分类号： H01L29/66742 , H01L29/45 , H01L29/4908 , H01L29/786 , H01L29/7869
摘要： A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel.
摘要翻译：一种制造透明晶体管的方法，所述透明晶体管包括形成在所述基板上的基板，源极和漏极，每个具有下透明层，金属层和上透明层的多层结构，在所述源极和漏极之间形成的沟道电极和与通道对准的栅电极。下透明层或上透明层由与通道相同的透明半导体层形成。

33. 发明申请

US20060127697A1 Organic electroluminescent elements including triazine derivative compounds 有权
标题翻译：包括三嗪衍生物化合物的有机电致发光元件
公开(公告)号：US20060127697A1
公开(公告)日：2006-06-15
申请号：US11183207
申请日：2005-07-15
申请人： Hyoyoung Lee , Hye Yong Chu
发明人： Hyoyoung Lee , Hye Yong Chu
IPC分类号： H01L51/50 , H05B33/12
CPC分类号： H01L51/5088 , H01L51/0067 , H01L51/5052 , H01L51/5092 , Y10S428/917
摘要： An organic electroluminescent element including an organic compound layer which is composed of a C—F compound (PFPT) having a triazine group is provided. The organic electroluminescent element includes: two electrodes; and at least one organic compound layer formed between the two electrodes, in which the organic compound layer is doped with a triazine derivative compound represented by the following Formula: where each of R1, R2 and R3 is a perfluorophenylene derivative.
摘要翻译：提供了包含由具有三嗪基的C-F化合物（PFPT）组成的有机化合物层的有机电致发光元件。有机电致发光元件包括：两个电极; 以及形成在两个电极之间的至少一个有机化合物层，其中有机化合物层掺杂有由下式表示的三嗪衍生物化合物：其中R 1，R 2， R 3和R 3是全氟亚苯基衍生物。

34. 发明授权

US06590125B2 Blue light-emitting polymer prepared using a fluorinated tetraphenyl monomer and an EL device manufactured using the polymer 有权
标题翻译：使用氟化四苯基单体制备的蓝色发光聚合物和使用该聚合物制造的EL器件
公开(公告)号：US06590125B2
公开(公告)日：2003-07-08
申请号：US09826027
申请日：2001-04-03
申请人： Do Hoon Hwang , Tae Hyoung Zyung , Lee Mi Do , Hye Yong Chu
发明人： Do Hoon Hwang , Tae Hyoung Zyung , Lee Mi Do , Hye Yong Chu
IPC分类号： C07F928
CPC分类号： H01L51/0036 , C08G61/02 , C08G61/10 , C08G73/0672 , C09K11/06 , H01L51/0035 , H01L51/0038 , H01L51/0043 , H01L51/5012 , Y10S428/917
摘要： A light-emitting polymer and its preparation method, the polymer being excellent in electron injection and transport ability as well as hole injection and transport ability in an EL device, the EL device manufactured from the polymer being also emittable in the blue emission region, in which the EL device from an inorganic material is not mostly emittable. The light-emitting polymer of the invention is an alternated copolymer having repeated units (arylenevinylene units) excellent in hole injection and transport ability and repeated units (fluorinated tetraphenyl units) excellent in electron injection and transport ability with alternated order, as shown in formula (II). An EL device manufactured from the light-emitting polymer, a fluorinated tetraphenyl derivative of formula (I), which is used as a monomer to prepare the light-emitting polymer, and their preparation methods.
摘要翻译：一种发光聚合物及其制备方法，在EL器件中，电子注入和输送能力以及空穴注入和输送能力优异的聚合物，由聚合物制造的EL器件也可在蓝色发射区域中发射，来自无机材料的EL器件不是大多数可发射的。本发明的发光聚合物是具有优异的空穴注入和输送能力的重复单元（亚芳基亚乙烯基单元）和交替顺序优异的电子注入和输送能力的重复单元（氟化四苯基单元）的交替共聚物，如式 II）。由发光聚合物制造的EL器件，用作制备发光聚合物的单体的式（I）的氟化四苯基衍生物及其制备方法。

35. 发明授权

US06343090B1 Single mode surface emitting laser 有权
标题翻译：单模表面发射激光器
公开(公告)号：US06343090B1
公开(公告)日：2002-01-29
申请号：US09141794
申请日：1998-08-28
申请人： Byueng Su Yoo , Hye Yong Chu , Hyo Hoon Park , Kyung Sook Hyun , El Hang Lee
发明人： Byueng Su Yoo , Hye Yong Chu , Hyo Hoon Park , Kyung Sook Hyun , El Hang Lee
IPC分类号： H10S308
CPC分类号： H01S5/18388 , H01S5/0425 , H01S5/18308 , H01S5/205 , H01S2301/166 , H01S2301/176
摘要： A single mode surface emitting laser and its manufacturing method are provided. The surface emitting laser which has a characteristic of single transverse mode radiation in the broad region using reflectivity distribution of a reflector layer with an antiguide clad is provided. The single mode surface emitting laser comprises an n-type semiconductor substrate having an n-type lower electrode and an antireflection film thereunder, a laser pillar formed on the semiconductor substrate, the laser pillar having a bottom DBR, an active layer and a top DBR, a control layer formed on said laser pillar, the control layer consisting of a compound semiconductor of which energy gap is larger than radiation wavelength, an antiguide clad layer covering an outer portion of the laser pillar including the control layer and has higher reflective index than those of the active layer or the top DBR forming the laser pillar, a top electrode formed on the antiguide clad layer and the control layer, and an insulation film between the antiguide clad layer and the top electrode.
摘要翻译：提供单模表面发射激光器及其制造方法。提供了具有使用具有防反射层的反射层的反射率分布的广域中具有单横模辐射特性的表面发射激光器。单模面发光激光器包括在其上具有n型下电极和抗反射膜的n型半导体衬底，形成在半导体衬底上的激光柱，具有底部DBR的激光柱，有源层和顶部DBR 形成在所述激光柱上的控制层，所述控制层由能隙大于辐射波长的化合物半导体构成，覆盖所述控制层的所述激光柱的外部的反射覆盖层具有比所述控制层更高的反射指数形成激光柱的有源层或顶部DBR，形成在防反射覆层和控制层上的顶部电极，以及在防反射覆盖层和顶部电极之间的绝缘膜。

36. 发明申请

US20120315729A1 METHOD OF MANUFACTURING TRANSPARENT TRANSISTOR WITH MULTI-LAYERED STRUCTURES 有权
标题翻译：制造具有多层结构的透明晶体管的方法
公开(公告)号：US20120315729A1
公开(公告)日：2012-12-13
申请号：US13590768
申请日：2012-08-21
申请人： Min Ki RYU , Chi Sun Hwang , Chun Won Byun , Hye Yong Chu , Kyoung Ik Cho
发明人： Min Ki RYU , Chi Sun Hwang , Chun Won Byun , Hye Yong Chu , Kyoung Ik Cho
IPC分类号： H01L21/336
CPC分类号： H01L29/66742 , H01L29/45 , H01L29/4908 , H01L29/786 , H01L29/7869
摘要： A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel.
摘要翻译：一种制造透明晶体管的方法，所述透明晶体管包括形成在所述基板上的基板，源极和漏极，每个具有下透明层，金属层和上透明层的多层结构，在所述源极和漏极之间形成的沟道电极和与通道对准的栅电极。下透明层或上透明层由与通道相同的透明半导体层形成。

37. 发明授权

US06482665B1 Polarization switching surface-emitting laser and a method of manufacturing the same 失效
标题翻译：偏振切换表面发射激光器及其制造方法
公开(公告)号：US06482665B1
公开(公告)日：2002-11-19
申请号：US09718188
申请日：2000-11-21
申请人： Hye Yong Chu , Byueng-Su Yoo , Hyo-Hoon Park
发明人： Hye Yong Chu , Byueng-Su Yoo , Hyo-Hoon Park
IPC分类号： H01L2100
CPC分类号： H01S5/18302 , H01S5/0614 , H01S5/18311 , H01S5/18341 , H01S5/18355
摘要： A method of manufacturing a polarization switching surface-emitting laser in which a laser resonance wavelength depends on changing the polarization of the laser, by changing the refractivity of a compound semiconductor mirror layer of the laser depending on polarizations using an electro-optic effect of compound semiconductor materials such as GsAs and applying an electric field thereto.
摘要翻译：一种制造偏振切换表面发射激光器的方法，其中激光谐振波长取决于改变激光器的偏振，通过使用化合物的电光效应根据偏振改变激光的化合物半导体镜层的折射率半导体材料如GsAs并向其施加电场。

38. 发明授权

US6055087A Photo-induced electro-optic oscillator using a multiple quantum well pin diode 失效
标题翻译：使用多量子阱针二极管的光感应电光振荡器
公开(公告)号：US6055087A
公开(公告)日：2000-04-25
申请号：US118958
申请日：1998-07-17
申请人： O Kyun Kwon , Kyu Seok Lee , Hye Yong Chu
发明人： O Kyun Kwon , Kyu Seok Lee , Hye Yong Chu
IPC分类号： H01L51/00 , G02F1/015 , G02F3/02 , H01L31/10 , H01S3/10
CPC分类号： G02F3/028 , G02F1/015
摘要： A photo-induced electro-optic oscillator using a multiple quantum well structure PIN diode using a negative resistance characteristic of a photocurrent-voltage is disclosed. The present invention can generate the modulated optical signal as well as the electrical AC signal of a high output by using the multiple quantum well structure having the electro-absorption as the intrinsic layer of the PIN diode, regulate the electrical AC signal frequency and signal amplitude by means of regulating the PIN diode and electrical elements, regulate the modulated optical signal frequency and the modulated signal difference and extinction ratio by means of regulating the multiple quantum well structure, as a result, to generate the electrical and optical signal of a high output, high frequency.
摘要翻译：公开了一种使用具有光电流电压的负电阻特性的多量子阱结构PIN二极管的光感应电光振荡器。本发明可以通过使用具有电吸收的多量子阱结构作为PIN二极管的本征层来产生高输出的调制光信号以及高交流信号，调节电AC信号频率和信号幅度通过调节PIN二极管和电气元件，通过调节多重量子阱结构来调节调制光信号频率和调制信号差和消光比，从而产生高输出的电光信号，高频。

39. 发明授权

US08095343B2 Method and apparatus for modeling source-drain current of thin film transistor 有权
标题翻译：薄膜晶体管源漏电流建模方法及设备
公开(公告)号：US08095343B2
公开(公告)日：2012-01-10
申请号：US12201457
申请日：2008-08-29
申请人： Jae Heon Shin , Chi Sun Hwang , Min Ki Ryu , Woo Seok Cheong , Hye Yong Chu
发明人： Jae Heon Shin , Chi Sun Hwang , Min Ki Ryu , Woo Seok Cheong , Hye Yong Chu
IPC分类号： G06F17/11
CPC分类号： G06F17/5036
摘要： Provided are a method and apparatus for modeling source-drain current of a TFT. The method includes receiving sample data, the sample data including a sample input value and a sample output value; adjusting modeling variables according to the sample data; calculating a current model value according to the adjusted modeling variables; when a difference between the calculated current model value and the sample output value is smaller than a predetermined threshold value, fitting a current model by applying the adjusted modeling variables to the current model; applying actual input data to the fitted current model; and outputting a result value corresponding to the actual input data, wherein the current model is a model for predicting the source-drain current of the TFT.
摘要翻译：提供了一种用于建模TFT的源极 - 漏极电流的方法和装置。该方法包括接收样本数据，样本数据包括样本输入值和样本输出值; 根据样本数据调整建模变量; 根据调整后的建模变量计算当前模型值; 当所计算的当前模型值与样本输出值之间的差小于预定阈值时，通过将调整的建模变量应用于当前模型来拟合当前模型; 将实际输入数据应用于拟合的当前模型; 并输出与实际输入数据对应的结果值，其中当前模型是用于预测TFT的源极 - 漏极电流的模型。

40. 发明授权

US5939729A Optical controlled resonant tunneling diode 失效
标题翻译：光控谐振隧道二极管
公开(公告)号：US5939729A
公开(公告)日：1999-08-17
申请号：US976776
申请日：1997-11-24
申请人： Hye Yong Chu , Kyu-Suk Lee , Byueng-Su Yoo , Hyo-Hoon Park
发明人： Hye Yong Chu , Kyu-Suk Lee , Byueng-Su Yoo , Hyo-Hoon Park
IPC分类号： H01S3/00 , H01L31/0352 , H01L31/103 , H01L29/06
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/1035
摘要： The present invention relates to a semiconductor photoelectric device including a InAs layer formed to monoatomic thickness sandwiched between spacer layers adjacent to an emitter to maximize a difference in energy between two quantum states in accumulation layer of a resonant tunneling diode having a double barrier structure, resulting in separating the resonant tunneling current determined by two quantum states of the triangular well in accumulation layer of resonant tunneling diode, even when light of a low intensity is irradiated to the surface of the resonant tunneling diode. Thus, there is provided an optical controlled resonant tunneling diode, making it possible to manufacturing a switching device for controlling an electric signal using light source by adjusting, using light, the resonant tunneling determined by an excited state of the triangular well.
摘要翻译：本发明涉及一种半导体光电器件，其包括形成为单原子厚度的InAs层，夹在与发射极相邻的间隔层之间，以使具有双重屏障结构的谐振隧道二极管的累积层中的两个量子态之间的能量差最大化，从而产生在谐振隧道二极管的累积层中分离由三角形阱的两个量子态确定的谐振隧穿电流，即使当低强度的光照射到谐振隧穿二极管的表面时。因此，提供了一种光控谐振隧道二极管，使得可以通过使用光调节由三角形阱的激发状态确定的谐振隧穿来制造用于使用光源控制电信号的开关装置。

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