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31. 发明申请

US20070069380A1 Ohmic contact on p-type GaN 失效
标题翻译： p型GaN上的欧姆接触
公开(公告)号：US20070069380A1
公开(公告)日：2007-03-29
申请号：US11234993
申请日：2005-09-26
申请人： Jeffrey Miller , David Bour , Virginia Robbins , Steven Lester
发明人： Jeffrey Miller , David Bour , Virginia Robbins , Steven Lester
IPC分类号： H01L23/48
CPC分类号： H01L21/28575 , H01L33/14 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.
摘要翻译：根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。欧姆接触还包括提供金属接触的金属层。不同的II-VI化合物半导体的第二层位于金属层附近。

32. 发明申请

US20070030870A1 Method and structure for ridge waveguide quantum cascade laser with p-type overgrowth 审中-公开
标题翻译：具有p型过度生长的脊波导量子级联激光器的方法和结构
公开(公告)号：US20070030870A1
公开(公告)日：2007-02-08
申请号：US11191773
申请日：2005-07-27
申请人： David Bour , Scott Corzine
发明人： David Bour , Scott Corzine
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/2226 , H01S5/305 , H01S5/3054 , H01S5/3211 , H01S5/3422
摘要： The performance characteristics of ridge waveguide QCL may be improved in accordance with the invention by replacing the insulating dielectric layers such as SiO2, Si3N4 or SiC with p-type InP overgrowth layers as well as p-type AlInAs or InGaAsP overgrowth layers, for example.
摘要翻译：根据本发明，脊波导QCL的性能特征可以通过将绝缘电介质层替换为诸如SiO 2，Si 3 N 4 N / 或具有p型InP过度生长层的SiC，以及例如p型AlInAs或InGaAsP过度生长层。

33. 发明申请

US20060203865A1 Buried heterostructure quantum cascade laser 失效
标题翻译：埋入异质结量子级联激光器
公开(公告)号：US20060203865A1
公开(公告)日：2006-09-14
申请号：US11076599
申请日：2005-03-09
申请人： David Bour , Scott Corzine
发明人： David Bour , Scott Corzine
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2226 , H01S5/3402
摘要： A buried heterostructure quantum cascade laser structure uses reverse biased junction to achieve current blocking. Doping and ridge width of the structure may be adjusted to provide effective mode discrimination.
摘要翻译：掩埋异质结量子级联激光器结构使用反向偏置结实现电流阻塞。可以调整结构的掺杂和脊宽以提供有效的模式鉴别。

34. 发明申请

US20050276557A1 Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD 失效
标题翻译：具有通过单步MOCVD制造的集成波导光栅的埋入异质结构器件
公开(公告)号：US20050276557A1
公开(公告)日：2005-12-15
申请号：US11154034
申请日：2005-06-16
申请人： David Bour , Scott Corzine
发明人： David Bour , Scott Corzine
IPC分类号： G02B6/10 , G02B6/13 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/32 , H01S5/343
CPC分类号： H01S5/12 , B82Y20/00 , G02B6/131 , H01S5/1231 , H01S5/1237 , H01S5/2004 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/227 , H01S5/3211 , H01S5/34313 , H01S5/34366 , H01S2301/173 , H01S2304/04
摘要： The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.
摘要翻译：该器件是包括生长表面，生长掩模，光波导核心台面和包层的光电器件或透明波导器件。生长掩模位于半导体表面上并且限定具有周期性光栅轮廓的细长生长窗口。光波导核心台面位于生长窗口中，具有梯形横截面形状。包覆层覆盖光波导芯体台面并在生长掩模的至少一部分上延伸。这样的器件通过提供包括生长表面的晶片来制造，通过在第一生长温度下的微选择性区域生长在生长表面上生长光波导核心台面并且在第二生长温度下覆盖包含材料的光波导芯台面，低于第一生长温度。

35. 发明申请

US20050263780A1 Light emitting diodes with graded composition active regions 失效
公开(公告)号：US20050263780A1
公开(公告)日：2005-12-01
申请号：US11177670
申请日：2005-07-07
申请人： David Bour , Nathan Gardner , Werner Goetz , Stephen Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher Kocot , Mark Hueschen
发明人： David Bour , Nathan Gardner , Werner Goetz , Stephen Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher Kocot , Mark Hueschen
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.

36. 发明申请

US20050169582A1 Optical isolator utilizing a micro-resonator 失效
标题翻译：光隔离器利用微谐振器
公开(公告)号：US20050169582A1
公开(公告)日：2005-08-04
申请号：US10768858
申请日：2004-01-29
申请人： Michael Tan , William Trutna , David Bour , Michael Leary
发明人： Michael Tan , William Trutna , David Bour , Michael Leary
IPC分类号： G02F1/09 , G02B6/26 , G02B6/34 , G02B27/28 , G02F1/095 , H04B10/00
CPC分类号： G02B6/29335 , G02B6/12007 , G02B6/2746 , G02B2006/12097 , G02B2006/12104 , G02F1/0955 , G02F2203/15
摘要： An optical isolator for coupling light from a first waveguide to a second waveguide is disclosed. The optical isolator utilizes a resonator coupled to the first and second optical waveguides. The resonator has a resonance at λ for light traveling from the first optical waveguide to the second optical waveguide; however, the resonator does not have a resonance at λ for light traveling from the second waveguide to the first waveguide. The resonator can use a layer of ferromagnetic material in an applied magnetic field. The magnetic field within the ferromagnetic material varies in strength and/or direction over the layer of ferromagnetic material. The magnetic field can be generated by an external magnetic field that varies over the layer of ferromagnetic material. Alternatively, the resonator can include a layer of ferromagnetic metal that overlies a portion of the layer of ferromagnetic material and a constant external magnetic field.
摘要翻译：公开了一种用于将来自第一波导的光耦合到第二波导的光隔离器。光隔离器利用耦合到第一和第二光波导的谐振器。谐振器对于从第一光波导到第二光波导的光的λ具有谐振; 然而，对于从第二波导传播到第一波导的光，谐振器在λ处不具有谐振。谐振器可以在施加的磁场中使用铁磁材料层。铁磁材料内的磁场在铁磁材料层上的强度和/或方向上变化。磁场可以由在铁磁材料层上变化的外部磁场产生。或者，谐振器可以包括铁磁金属层，其覆盖铁磁材料层的一部分和恒定的外部磁场。

37. 发明申请

US20110204376A1 GROWTH OF MULTI-JUNCTION LED FILM STACKS WITH MULTI-CHAMBERED EPITAXY SYSTEM 审中-公开
标题翻译：多层外延系统的多功能LED膜片的生长
公开(公告)号：US20110204376A1
公开(公告)日：2011-08-25
申请号：US12871617
申请日：2010-08-30
申请人： Jie Su , David Bour
发明人： Jie Su , David Bour
IPC分类号： H01L33/30 , H01L21/20
CPC分类号： H01L25/0756 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L27/156 , H01L33/0016 , H01L33/007 , H01L33/08 , H01L2224/48137 , H01L2924/0002
摘要： Apparatus and method for growth of non-p-type GaN layers over p-type GaN layers. Embodiments include multi-junction LED film stacks, multi-junction LED devices paired into units and multi-junction LED arrays of the paired units. Epitaxial growths of p-type and non-p-type material layers are split between epitaxial chambers clustered onto a single platform to reduce p-type dopant cross-contamination. Arrayed multi-junction LED devices provide improved packing density and reduced blinking during AC operation.
摘要翻译：在p型GaN层上生长非p型GaN层的装置和方法。实施例包括配对单元的多结LED膜堆叠，多结LED器件和成对单元的多结LED阵列。将p型和非p型材料层的外延生长分为在单个平台上聚集的外延室之间以减少p型掺杂剂交叉污染。阵列多结LED器件在交流运行期间提供改进的封装密度和减少的闪烁。

38. 发明授权

US07560364B2 Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films 失效
标题翻译：位错特异性侧向外延生长以减少氮化物膜的位错密度
公开(公告)号：US07560364B2
公开(公告)日：2009-07-14
申请号：US11429084
申请日：2006-05-05
申请人： David Bour , Sandeep Nijhawan , Jacob Smith , Lori Washington
发明人： David Bour , Sandeep Nijhawan , Jacob Smith , Lori Washington
IPC分类号： H01L21/20
CPC分类号： C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L29/2003 , H01L33/007 , H01L33/025
摘要： In accordance with the present invention, improved methods for reducing the dislocation density of nitride epitaxial films are provided. Specifically, an in-situ etch treatment is provided to preferentially etch the dislocations of the nitride epitaxial layer to prevent threading of the dislocations through the nitride epitaxial layer. Subsequent to etching of the dislocations, an epitaxial layer overgrowth is performed. In certain embodiments, the etching of the dislocations occurs simultaneously with growth of the epitaxial layer. In other embodiments, a dielectric mask is deposited within the etch pits formed at the dislocations prior to the epitaxial layer overgrowth.
摘要翻译：根据本发明，提供了用于降低氮化物外延膜的位错密度的改进方法。具体地，提供了原位蚀刻处理以优先蚀刻氮化物外延层的位错，以防止通过氮化物外延层的位错穿透。在蚀刻位错之后，进行外延层过度生长。在某些实施例中，位错的蚀刻与外延层的生长同时发生。在其它实施例中，在外延层过度生长之前，在形成于位错处的蚀刻坑内沉积电介质掩模。

39. 发明申请

US20080206902A1 STRESS MEASUREMENTS DURING LARGE-MISMATCH EPITAXIAL PROCESSES 审中-公开
标题翻译：在大型MISMATCH外部过程中的应力测量
公开(公告)号：US20080206902A1
公开(公告)日：2008-08-28
申请号：US11678870
申请日：2007-02-26
申请人： David Bour , Jacob Grayson
发明人： David Bour , Jacob Grayson
IPC分类号： H01L21/66 , B05C11/00
CPC分类号： H01L22/12
摘要： A substrate is disposed within a processing chamber. A nitrogen precursor and a group-III precursor are flowed into the processing chamber. A layer is deposited over the substrate with a thermal chemical-vapor-deposition process at an elevated temperature within the processing chamber using the nitrogen precursor and the group-III precursor. Light beams are directed to a surface of the layer and light spots corresponding to reflections of the light beams are received from the surface at a position-sensitive detector. Positions of the light spots on the position-sensitive detector are determined from photocurrent induced in a photodiode in the position-sensitive detector. A curvature of the layer is determined from the positions of the light spots.
摘要翻译：衬底设置在处理室内。氮气前体和III族前体流入处理室。使用氮前体和III族前体，在处理室内的高温下，通过热化学气相沉积工艺在衬底上沉积一层。光束被引导到层的表面，并且在位置敏感检测器处从表面接收与光束的反射相对应的光点。位置敏感检测器上的光点的位置由在位置敏感检测器中的光电二极管中感应的光电流确定。从光斑的位置确定层的曲率。

40. 发明授权

US07399653B2 Nitride optoelectronic devices with backside deposition 失效
标题翻译：氮化物光电子器件具有背面沉积
公开(公告)号：US07399653B2
公开(公告)日：2008-07-15
申请号：US11414581
申请日：2006-04-28
申请人： David Bour , Jacob Smith , Jie Su , Sandeep Nijhawan
发明人： David Bour , Jacob Smith , Jie Su , Sandeep Nijhawan
IPC分类号： H01L21/00
CPC分类号： H01L33/007
摘要： Nitride optoelectronic devices that have asymmetric double-sided structures and methods fabricating such structures are disclosed. Two n-type III-N layers are formed simultaneously over opposite sides of a substrate with substantially the same composition. Thereafter, a p-type III-N active layer is formed over one of the n-type III-N layers but not over the other.
摘要翻译：公开了具有非对称双面结构的氮化物光电器件和制造这种结构的方法。两个n型III-N层同时形成在具有基本相同组成的衬底的相对侧上。此后，在n型III-N层之一上形成p型III-N有源层，而不是在另一层上形成p型III-N有源层。

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