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    • 33. 发明授权
    • Photovoltaic device
    • 光伏装置
    • US08637948B2
    • 2014-01-28
    • US13552594
    • 2012-07-18
    • Hyun-Jong KimCzang-Ho LeeMin ParkKyoung-Jin SeoSang-Won LeeJun-Ki HongByoung-Gook Jeong
    • Hyun-Jong KimCzang-Ho LeeMin ParkKyoung-Jin SeoSang-Won LeeJun-Ki HongByoung-Gook Jeong
    • H01L31/0232H01L21/00
    • H01L31/0682H01L31/1804Y02E10/547Y02P70/521
    • A photovoltaic device including a semiconductor substrate having a first surface and a second surface, the second surface being opposite to the first surface; a first passivation layer on the first surface; and a second passivation layer on the second surface, wherein each of the first passivation layer and the second passivation layer comprises an aluminum-based compound, is disclosed. A method of preparing a photovoltaic device, the method including: forming a semiconductor substrate to have a first surface and a second surface, the second surface being opposite to the first surface; forming an emitter region and a back surface field (BSF) region at the second surface; and forming a first passivation layer on the first surface and a second passivation layer on the second surface, wherein the first passivation layer and the second passivation layer are formed concurrently, is also disclosed.
    • 一种光电器件,包括具有第一表面和第二表面的半导体衬底,所述第二表面与所述第一表面相对; 第一表面上的第一钝化层; 以及在第二表面上的第二钝化层,其中第一钝化层和第二钝化层中的每一个包括铝基化合物。 一种制备光伏器件的方法,所述方法包括:形成具有第一表面和第二表面的半导体衬底,所述第二表面与所述第一表面相对; 在所述第二表面处形成发射极区域和后表面场(BSF)区域; 并且还公开了在第一表面上形成第一钝化层和第二表面上的第二钝化层,其中同时形成第一钝化层和第二钝化层。