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    • 33. 发明授权
    • Exposure methods for overlaying one mask pattern on another
    • 将另一个掩模图案重叠的曝光方法
    • US06331369B1
    • 2001-12-18
    • US09415500
    • 1999-10-12
    • Masaharu KawakuboRyoichi Kaneko
    • Masaharu KawakuboRyoichi Kaneko
    • G03F900
    • G03F7/70633G03F7/70358G03F7/70458G03F9/7046
    • An exposure method in which mask patterns are overlaid on one another on a substrate, which is an object to be exposed, by using a first and second exposure apparatuses having respective exposure fields of different sizes. The exposure method includes the steps of: sequentially transferring a first mask pattern onto the substrate in the form of a first array in units of a shot area of a predetermined size by using the first exposure apparatus; detecting at least either one of a perpendicularity error of the first array from a design value and a mean value of rotation angles of the shot areas in the first array when a second mask pattern is to be sequentially transferred onto the substrate in the form of a second array in units of a shot area different in size from the unit shot area of a predetermined size by using the second exposure apparatus; and rotating the second mask pattern and the substrate relative to each other through an angle corresponding to a result of the detection, and thereafter, sequentially transferring the second mask pattern onto the substrate.
    • 通过使用具有不同尺寸的各自的曝光场的第一和第二曝光装置,将掩模图案彼此叠置在作为被曝光对象的基板上的曝光方法。 曝光方法包括以下步骤:通过使用第一曝光装置以预定尺寸的照射区域为单位,以第一阵列的形式顺序地将第一掩模图案转印到基板上; 当将第二掩模图案按顺序转印到基板上时,从设计值和第一阵列中的照射区域的旋转角度的平均值中检测第一阵列的垂直度误差中的至少一个, 通过使用第二曝光装置,以与预定尺寸的单位拍摄区域不同的拍摄区域为单位的第二阵列; 并且使第二掩模图案和基板相对于彼此相对于检测结果的角度旋转,然后依次将第二掩模图案转印到基板上。