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    • 32. 发明申请
    • Fuel injection valve
    • 燃油喷射阀
    • US20080223960A1
    • 2008-09-18
    • US12068279
    • 2008-02-05
    • Norio YamamotoKouichi Mochizuki
    • Norio YamamotoKouichi Mochizuki
    • F02M47/02F02M61/16F02M51/00
    • F02M51/0603F02M2200/704
    • A fuel injection valve includes a main body having a nozzle hole and a compression chamber. The main body accommodates a compression unit for pressurizing fuel accumulated in the compression chamber. The fuel injection valve further includes a valve element being axially movable in the main body. The valve element includes a valve portion and a pressure-receiving portion. The valve portion is movable in an opening direction to open the nozzle hole in response to pressure of fuel being pressurized by the compression unit and applied to the pressure-receiving portion. A regulating unit is provided in the compression chamber for regulating movement of the valve element with respect to the opening direction.
    • 燃料喷射阀包括具有喷嘴孔和压缩室的主体。 主体容纳用于对在压缩室中积聚的燃料加压的压缩单元。 燃料喷射阀还包括可在主体中轴向移动的阀元件。 阀元件包括阀部分和压力接收部分。 阀部分可以在打开方向上移动,以响应于由压缩单元加压的燃料的压力而打开喷嘴孔并施加到压力接收部分。 调节单元设置在压缩室中,用于调节阀元件相对于打开方向的运动。
    • 33. 发明授权
    • Semiconductor device for precise measurement of a forward voltage effect
    • 用于精确测量正向电压效应的半导体器件
    • US06559481B2
    • 2003-05-06
    • US10075393
    • 2002-02-15
    • Kazushige MatsuoEisuke SuekawaKouichi Mochizuki
    • Kazushige MatsuoEisuke SuekawaKouichi Mochizuki
    • H01L2974
    • H01L29/861
    • A semiconductor device such as an IGBT, for realizing measurement precision for forward voltage effect characteristics using a relatively small current. It includes a second conductivity type of first anode region formed to partially constitute the upper surface of a first conductivity type of semiconductor substrate and having an anode electrode formed on its upper surface, a second anode region formed within said first anode region, and an anode electrode formed on said second anode region. The second anode region is electrically isolated from the first anode region, and the anode electrode formed on the upper surface of the second anode region is independent of the anode electrode formed on the upper surface of the first anode region. In such semiconductor device having said second anode region, even though a small force current, measurement can be performed at a current density which is equal to or close to a rated current.
    • 诸如IGBT的半导体器件,用于使用相对小的电流实现正向电压效应特性的测量精度。 它包括第二导电类型的第一阳极区域,形成为部分地构成第一导电类型的半导体衬底的上表面并且具有在其上表面上形成的阳极电极,形成在所述第一阳极区域内的第二阳极区域和阳极 形成在所述第二阳极区上的电极。 第二阳极区域与第一阳极区域电隔离,形成在第二阳极区域的上表面上的阳极电极与形成在第一阳极区域的上表面上的阳极电极无关。 在具有所述第二阳极区域的这种半导体器件中,尽管能够以等于或接近额定电流的电流密度进行小的力电流测量。