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31. 发明授权

US08455967B2 Memory element and memory device 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US08455967B2
公开(公告)日：2013-06-04
申请号：US13216474
申请日：2011-08-24
申请人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82 , H01L43/00 , G11C11/00
CPC分类号： G11C11/16 , G11C11/161
摘要： There is disclosed a memory element including a layered structure including a memory layer that has magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and the memory layer and the magnetization-fixed layer have a film thickness in such a manner that an interface magnetic anisotropy energy becomes larger than a diamagnetic energy.
摘要翻译：公开了一种存储元件，其包括层叠结构，该分层结构包括具有垂直于膜面的磁化和其信息方向变化的磁化方向的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层之间的绝缘层。自旋极化的电子沿分层结构的层叠方向注入，由此存储层的磁化方向变化，并且相对于存储层执行信息的记录，有效的抗磁场的大小存储层接收小于存储层的饱和磁化量，并且存储层和磁化固定层具有使界面磁各向异性能量变得大于反磁能的方式的膜厚度。

32. 发明申请

US20120287696A1 STORAGE ELEMENT AND STORAGE DEVICE 有权
标题翻译：存储元件和存储设备
公开(公告)号：US20120287696A1
公开(公告)日：2012-11-15
申请号：US13451043
申请日：2012-04-19
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
IPC分类号： G11C5/08
CPC分类号： H01F10/3286 , B82Y40/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/329 , H01F41/303 , H01F41/325 , H01L27/226 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A storage element includes a storage layer having a magnetization perpendicular to a layer surface and storing information according to a magnetization state of a magnetic material; a fixed magnetization layer having the magnetization as a reference of the information of the storage layer and perpendicular to the layer surface; an interlayer formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a coercive force enhancement layer adjacent to the storage layer, opposite to the interlayer, and formed of Cr, Ru, W, Si, or Mn; and a spin barrier layer formed of an oxide, adjacent to the coercive force enhancement layer, and opposite to the storage layer. The storage layer magnetization is reversed using spin torque magnetization reversal caused by a current in a lamination direction of a layer structure including the storage layer, the interlayer, and the fixed magnetization layer, thereby storing information
摘要翻译：存储元件包括具有垂直于层表面的磁化的存储层，并且根据磁性材料的磁化状态存储信息; 具有作为存储层的信息并垂直于层表面的参考的磁化的固定磁化层; 由非磁性材料形成并夹在所述存储层和所述固定磁化层之间的夹层; 与所述中间层相对的与所述存储层相邻的矫顽力增强层，由Cr，Ru，W，Si或Mn形成; 以及由与矫顽力增强层相邻并与存储层相对的氧化物形成的自旋势垒层。使用由包括存储层，中间层和固定磁化层的层结构的层叠方向上的电流引起的自旋转矩磁化反转使存储层磁化反转，由此存储信息

33. 发明申请

US20120063220A1 MEMORY ELEMENT AND MEMORY DEVICE 有权
标题翻译：存储元件和存储器件
公开(公告)号：US20120063220A1
公开(公告)日：2012-03-15
申请号：US13219875
申请日：2011-08-29
申请人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C11/15
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , H01L27/228 , H01L43/08 , H01L43/10
摘要： There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and in regard to the insulating layer and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film.
摘要翻译：公开了一种存储元件，其包括具有垂直于膜面的磁化的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中在层状结构的层叠方向上注入自旋极化的电子，从而存储层的磁化方向变化，并且记录执行信息的存储层接收的有效反磁场的大小小于存储层的饱和磁化量，并且关于存储层与其接触的绝缘层和另一侧层与绝缘层相对的一侧，至少与记忆层接触的界面由氧化膜形成。

34. 发明申请

US20120063217A1 MEMORY ELEMENT AND MEMORY DEVICE 有权
标题翻译：存储元件和存储器件
公开(公告)号：US20120063217A1
公开(公告)日：2012-03-15
申请号：US13226953
申请日：2011-09-07
申请人： Masanori Hosomi , Kazuhiro Bessho , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Masanori Hosomi , Kazuhiro Bessho , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： H01L43/10 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein the memory layer has a lamination structure of a Co—Fe—B layer and an element belonging to any one of 1A group, 2A group, 3A group, 5A group, or 6A group, an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer.
摘要翻译：公开了一种存储元件，其包括具有垂直于膜面的磁化和其磁化方向根据信息而变化的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中所述存储层具有Co-Fe-B层和属于1A组，2A组，3A组中的任一个的元件的层叠结构 5A组或6A组，沿层叠结构的层叠方向注入自旋极化的电子，由此存储层的磁化方向变化，并且相对于存储层进行信息的记录，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量。

35. 发明申请

US20120056285A1 MEMORY ELEMENT AND MEMORY DEVICE 有权
标题翻译：存储元件和存储器件
公开(公告)号：US20120056285A1
公开(公告)日：2012-03-08
申请号：US13216464
申请日：2011-08-24
申请人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , G11C11/161
摘要： There is provided a memory element including a memory layer that has magnetization perpendicular to a film face; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, the insulating layer is formed of an oxide film, and the memory layer is formed of Co—Fe—B, a concentration of B is low in the vicinity of an interface with the insulating layer, and the concentration of B increases as it recedes from the insulating layer.
摘要翻译：提供了包括具有垂直于膜面的磁化的存储层的存储元件; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中在层状结构的层叠方向上注入自旋极化的电子，从而存储层的磁化方向变化，并且记录的信息，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量，绝缘层由氧化膜形成，并且存储层由Co-Fe- B，与绝缘层的界面附近B的浓度低，B的浓度随着从绝缘层后退而增加。

36. 发明申请

US20110317464A1 PORTABLE INFORMATION APPARATUS 失效
标题翻译：便携式信息装置
公开(公告)号：US20110317464A1
公开(公告)日：2011-12-29
申请号：US13149089
申请日：2011-05-31
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C7/02 , G11C5/14
CPC分类号： G06F1/1658
摘要： The present disclosure provides a portable information apparatus, including, an apparatus main body, an incidental article mounted on the apparatus main body when the portable information apparatus is used, a solid-state magnetic memory provided at a portion of the apparatus main body at which the incidental article is mounted and adapted to retain information in accordance with a magnetization state of a magnetic material, and a magnetic shield provided on the incidental article including a portion opposed to the solid-state magnetic memory when the incidental article is mounted on the apparatus main body.
摘要翻译：本公开提供了一种便携式信息装置，其包括装置主体，当使用便携式信息装置时安装在装置主体上的附带物品，设置在装置主体的一部分处的固态磁存储器，偶然物品被安装并适于根据磁性材料的磁化状态保持信息，以及设置在附带物品上的磁屏蔽，当附带的物品安装在设备上时，该屏蔽件包括与固态磁性存储器相对的部分主体。

37. 发明授权

US09093211B2 Storage element and storage device 有权
标题翻译：存储元件和存储设备
公开(公告)号：US09093211B2
公开(公告)日：2015-07-28
申请号：US13451043
申请日：2012-04-19
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
IPC分类号： H01F10/32 , G11C11/16 , H01L43/08 , H01F41/30 , H01L27/22 , H01F41/32 , B82Y40/00
CPC分类号： H01F10/3286 , B82Y40/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/329 , H01F41/303 , H01F41/325 , H01L27/226 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A storage element includes a storage layer having a magnetization perpendicular to a layer surface and storing information according to a magnetization state of a magnetic material; a fixed magnetization layer having the magnetization as a reference of the information of the storage layer and perpendicular to the layer surface; an interlayer formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a coercive force enhancement layer adjacent to the storage layer, opposite to the interlayer, and formed of Cr, Ru, W, Si, or Mn; and a spin barrier layer formed of an oxide, adjacent to the coercive force enhancement layer, and opposite to the storage layer. The storage layer magnetization is reversed using spin torque magnetization reversal caused by a current in a lamination direction of a layer structure including the storage layer, the interlayer, and the fixed magnetization layer, thereby storing information.
摘要翻译：存储元件包括具有垂直于层表面的磁化的存储层，并且根据磁性材料的磁化状态存储信息; 具有作为存储层的信息并垂直于层表面的参考的磁化的固定磁化层; 由非磁性材料形成并夹在所述存储层和所述固定磁化层之间的夹层; 与所述中间层相对的与所述存储层相邻的矫顽力增强层，由Cr，Ru，W，Si或Mn形成; 以及由与矫顽力增强层相邻并与存储层相对的氧化物形成的自旋势垒层。使用由包括存储层，中间层和固定磁化层的层结构的层叠方向上的电流引起的自旋转矩磁化反转，存储层磁化反转，从而存储信息。

38. 发明授权

US08743594B2 Memory element and memory device 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US08743594B2
公开(公告)日：2014-06-03
申请号：US13227144
申请日：2011-09-07
申请人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane
发明人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane
IPC分类号： G11C11/00 , G11C11/16 , H01F10/32
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10
摘要： There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and a Ta film is formed in such a manner that comes into contact with a face, which is opposite to the insulating layer side, of the magnetization-fixed layer.
摘要翻译：公开了一种存储元件，其包括具有垂直于膜面的磁化和其磁化方向根据信息而变化的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中在层状结构的层叠方向上注入自旋极化的电子，从而存储层的磁化方向变化，并且记录相对于存储层执行信息，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量，并且以与膜的接触形式形成Ta膜与磁化固定层的绝缘层侧相对的面。

39. 发明授权

US08693239B2 Memory element and memory device 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US08693239B2
公开(公告)日：2014-04-08
申请号：US13226953
申请日：2011-09-07
申请人： Masanori Hosomi , Kazuhiro Bessho , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Masanori Hosomi , Kazuhiro Bessho , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C11/00
CPC分类号： H01L43/10 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein the memory layer has a lamination structure of a Co—Fe—B layer and an element belonging to any one of 1A group, 2A group, 3A group, 5A group, or 6A group, an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer.
摘要翻译：公开了一种存储元件，其包括具有垂直于膜面的磁化和其磁化方向根据信息而变化的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中所述存储层具有Co-Fe-B层和属于1A组，2A组，3A组中的任一个的元件的层叠结构 5A组或6A组，沿层叠结构的层叠方向注入自旋极化的电子，由此存储层的磁化方向变化，并且相对于存储层进行信息的记录，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量。

40. 发明授权

US08692341B2 Storage element and storage device 有权
标题翻译：存储元件和存储设备
公开(公告)号：US08692341B2
公开(公告)日：2014-04-08
申请号：US13332664
申请日：2011-12-21
申请人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
发明人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
IPC分类号： H01L29/82
CPC分类号： G11C11/161
摘要： A storage element includes: a storage layer which has magnetization perpendicular to a film surface, the direction of the magnetization being changed in accordance with information; a magnetization fixed layer which has magnetization perpendicular to a film surface used as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. In the storage element described above, the magnetization of the storage layer is reversed using a spin torque magnetization reversal generated by a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information, the storage layer is directly provided with a layer at a side opposite to the insulating layer, and this layer includes a conductive oxide.
摘要翻译：存储元件包括：具有垂直于膜表面的磁化的存储层，磁化方向根据信息而改变; 磁化固定层，其具有与用作存储在存储层中的信息的基底的膜表面垂直的磁化; 以及设置在所述存储层和所述磁化固定层之间的非磁性物质的绝缘层。在上述存储元件中，使用由包括存储层，绝缘层和磁化固定层的层结构的层叠方向流动的电流产生的自旋转矩磁化反转来使存储层的磁化反转，以存储信息中，存储层在与绝缘层相反的一侧直接设置有层，该层包括导电氧化物。

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