会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 34. 发明申请
    • Image forming apparatus and control method therefor
    • 图像形成装置及其控制方法
    • US20060066887A1
    • 2006-03-30
    • US11222833
    • 2005-09-12
    • Tadaaki SaidaAkihito MoriNobuo SekiguchiKeita TakahashiTakashi Nagaya
    • Tadaaki SaidaAkihito MoriNobuo SekiguchiKeita TakahashiTakashi Nagaya
    • G06F3/12
    • H04N1/233H04N1/2307H04N1/2338H04N1/2369H04N1/40062H04N1/46H04N2201/33378
    • In an image forming apparatus having a discrimination mechanism that identifies an input document image as a color image or a monochrome image and an area recognition mechanism that recognizes a plurality of different areas contained in the document image, the apparatus applies the optimum color image forming mode even if the document is identified as a color image and forms an image. The user is permitted to select either a first color image forming mode that uses recording agents of m colors (where m is a natural number equal to or greater than 4) or a second color image forming mode that uses recording agents of n colors (where n is a natural number equal to or greater than m+1) as a color image forming mode applied to at least one of the areas recognized by the area recognition mechanism. If the input document image is identified as a color image, the apparatus applies the selected color image forming mode to at least one of the areas recognized by the area recognition mechanism and forms an image.
    • 在具有识别作为彩色图像或单色图像的输入文档图像的识别机构的图像形成装置以及识别文档图像中包含的多个不同区域的区域识别机构中,该装置将最佳彩色图像形成模式 即使文档被识别为彩色图像并形成图像。 允许用户选择使用m种颜色(其中m是等于或大于4的自然数)的记录剂的第一彩色图像形成模式或使用n种颜色的记录剂的第二彩色图像形成模式(其中 n是等于或大于m + 1的自然数)作为应用于由区域识别机构识别的区域中的至少一个的彩色图像形成模式。 如果将输入文档图像识别为彩色图像,则设备将所选择的彩色图像形成模式应用于区域识别机构识别的区域中的至少一个并形成图像。
    • 37. 发明申请
    • Image forming apparatus
    • 图像形成装置
    • US20050220467A1
    • 2005-10-06
    • US11085549
    • 2005-03-22
    • Keita TakahashiAkihito MoriNobuo SekiguchiTakashi Nagaya
    • Keita TakahashiAkihito MoriNobuo SekiguchiTakashi Nagaya
    • G03G15/20G03G15/00
    • G03G15/2032G03G15/2039G03G2215/2009
    • An image forming apparatus is provided which includes: an image forming device for forming an image on a recording material; a heating member heating the image formed on the recording material in a nip portion; an endless belt conveying the recording material toward the nip portion formed between itself and the heating member; a contacting and separating device for bringing said heating member and said belt into the contact with each other and for separating said heating member and said belt from each other; and a detection device for detecting the temperature of the belt, wherein if the detected temperature of the belt reaches a predetermined temperature, an image formation job is interrupted, and the heating member and the belt are separated.
    • 提供了一种图像形成装置,其包括:用于在记录材料上形成图像的图像形成装置; 加热构件,在夹持部中加热形成在记录材料上的图像; 传送记录材料朝向形成在其与加热构件之间的压合部分的环形带; 用于使所述加热构件和所述带彼此接触并将所述加热构件和所述带彼此分离的接触和分离装置; 以及用于检测所述带的温度的检测装置,其中如果所述带的检测温度达到预定温度,则图像形成作业被中断,并且所述加热构件和所述带分离。
    • 39. 发明授权
    • Nonvolatile semiconductor memory device comprising a memory transistor, a select transistor, and an intermediate diffusion layer
    • 包括存储晶体管,选择晶体管和中间扩散层的非易失性半导体存储器件
    • US06169307A
    • 2001-01-02
    • US09206560
    • 1998-12-08
    • Keita TakahashiMasafumi DoiHiroyuki DoiNobuyuki TamuraYasushi Okuda
    • Keita TakahashiMasafumi DoiHiroyuki DoiNobuyuki TamuraYasushi Okuda
    • G01L29788
    • G11C16/0416G11C16/0433H01L27/115
    • A memory transistor and a select transistor are disposed side by side on a semiconductor substrate between source/drain diffusion layers thereof, with an intermediate diffusion layer interposed therebetween. The memory transistor includes: a gate insulating film having such a thickness as to allow tunneling current to pass therethrough; a floating gate electrode; an interelectrode insulating film; and a control gate electrode. The select transistor includes a gate insulating film and a select gate electrode. Tunneling current, allowing electrons to pass through the gate insulating film under the floating gate electrode, is utilized during the removal and injection of electrons from/into the floating gate electrode. As a result, higher reliability can be attained and rewriting can be performed at a lower voltage. Also, since the select transistor is provided, reading can also be performed at a lower voltage. Improvement of reliability and rewrite and read operations at respective lower voltages are realized for a nonvolatile semiconductor memory device, in which a memory cell includes a floating gate electrode and a control gate electrode.
    • 存储晶体管和选择晶体管并排地设置在其源极/漏极扩散层之间的半导体衬底上,介于其间的中间扩散层。 存储晶体管包括:栅极绝缘膜,具有允许隧穿电流通过的厚度; 浮栅电极; 电极间绝缘膜; 和控制栅电极。 选择晶体管包括栅极绝缘膜和选择栅电极。 在从浮栅电极移入和注入电子期间,利用允许电子通过浮栅电极下的栅极绝缘膜的隧穿电流。 结果,可以获得更高的可靠性,并且可以在较低的电压下进行重写。 此外,由于提供了选择晶体管,所以也可以在较低的电压下执行读取。 对于其中存储单元包括浮置栅电极和控制栅电极的非易失性半导体存储器件,实现了在各自的较低电压下的可靠性的改善和重写和读取操作。
    • 40. 发明授权
    • Method of making semiconductor device
    • 制造半导体器件的方法
    • US06022777A
    • 2000-02-08
    • US055541
    • 1998-04-06
    • Keita Takahashi
    • Keita Takahashi
    • H01L21/8247H01L27/115H01L29/788H01L29/792
    • H01L27/11521
    • When a control gate electrode 7 is processed using a control gate electrode processing mask 8, the control gate electrode 7 in a region where the floating gate electrode 4 has been removed is partially left. Because of the presence of the left control gate electrode 7, the gate electrode interlayer insulating film 6 and gate insulating film 3 below the control gate electrode 7 are not dug in the region where the floating gate electrode 4 has been removed. Therefore, when the floating gate electrode 4 is removed, the semiconductor substrate is not dug. In this way, since the semiconductor substrate 1 is not dug, the semiconductor memory device can be manufactured stably and precisely.
    • 当使用控制栅电极处理掩模8处理控制栅电极7时,部分地留下了去除浮栅电极4的区域中的控制栅电极7。 由于存在左控制栅电极7,所以在去除浮栅电极4的区域中,不会切断控制栅电极7下方的栅电极层间绝缘膜6和栅极绝缘膜3。 因此,当去除浮栅电极4时,不会挖出半导体衬底。 以这种方式,由于半导体衬底1不被挖出,所以半导体存储器件能够被稳定且准确地制造。