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    • 34. 发明授权
    • Semiconductor display device and method of driving a semiconductor display device
    • 半导体显示装置及驱动半导体显示装置的方法
    • US08009159B2
    • 2011-08-30
    • US11586281
    • 2006-10-25
    • Masaaki HirokiEiji SatoShigeru OnoyaNoboru Inoue
    • Masaaki HirokiEiji SatoShigeru OnoyaNoboru Inoue
    • G06F3/038
    • G09G3/3614G09G3/20G09G5/399G09G2320/0247
    • A semiconductor display device capable of performing clear display of a high definition image, in which flicker, vertical stripes, horizontal stripes, and diagonal stripes are unlikely to be seen by an observer, is provided. An image signal input from the outside to a RAM of a frame conversion portion in a semiconductor display device is written in, and the written in image signal is read out two times, in order. A period for reading out the image signal input to the RAM one time is shorter than a period for writing in the image signal to the RAM. The electric potentials of display signals input to each pixel in two consecutive frame periods are inverted, with the electric potential of opposing electrodes (opposing electric potential) as a reference, whereby the same image is displayed in a pixel portion in the two consecutive frame periods.
    • 提供能够执行清晰显示高清晰度图像的半导体显示装置,其中闪烁,垂直条纹,水平条纹和对角条纹不太可能被观察者看到。 写入从半导体显示装置的帧转换部分的外部输入到RAM的图像信号,并依次读出写入的图像信号两次。 一次读取输入到RAM的图像信号的周期比写入RAM的图像信号的周期短。 在两个连续帧周期中输入到每个像素的显示信号的电位被反转,相对电极的电位(相对电位)作为参考,由此在两个连续帧周期中的像素部分中显示相同的图像 。
    • 35. 发明申请
    • TANDEM PULSE ARC WELDING CONTROL APPARATUS AND SYSTEM THEREFOR
    • TANDEM脉冲焊接控制装置及其系统
    • US20100230394A1
    • 2010-09-16
    • US12709703
    • 2010-02-22
    • Masahiro YOKOTAEiji SatoMasahiro Honma
    • Masahiro YOKOTAEiji SatoMasahiro Honma
    • B23K9/10
    • B23K9/0017B23K9/09B23K9/0953B23K9/121B23K9/1735
    • A tandem pulse arc welding control apparatus includes a voltage detector; a voltage setting unit; a pulse-peak-current-reference-value setting circuit; a pulse-base-current-reference-value setting circuit; an error amplifier that calculates a pulse-peak-current variation value and a pulse-base-current variation value; an adder that calculates a pulse-peak-current value; an adder that calculates a pulse-base-current value; a pulse-waveform selection circuit that outputs the pulse-peak-current value in a pulse peak period, and that outputs the pulse-base-current value in a pulse base period; and an output control circuit that controls a current value for a second welding wire. Because an appropriate welding voltage can be obtained with this configuration, a high welding quality can be realized.
    • 串联脉冲弧焊控制装置包括电压检测器; 电压设定单元; 脉冲峰值电流基准值设定电路; 脉冲基准电流基准值设定电路; 误差放大器,其计算脉冲峰值电流变化值和脉冲基极电流变化值; 计算脉冲峰值电流值的加法器; 计算脉冲基电流值的加法器; 脉冲波形选择电路,其在脉冲峰值期间输出脉冲峰值电流值,并且在脉冲基准周期内输出脉冲基极电流值; 以及控制第二焊丝的电流值的输出控制电路。 由于能够通过该结构获得适当的焊接电压,因此可以实现高的焊接质量。
    • 39. 发明申请
    • PROCESS FOR PRODUCTION OF BETAINE
    • 生产BETAINE的方法
    • US20090325246A1
    • 2009-12-31
    • US12514000
    • 2007-11-09
    • Kosuke OishiEiji SatoHiroyuki MoriAkira Yoshioka
    • Kosuke OishiEiji SatoHiroyuki MoriAkira Yoshioka
    • C12P13/02C07C231/12C07C227/14
    • C07C227/12C12P13/007C07C229/22
    • According to the present invention, by using 4-halogeno-3-hydroxybutanamide as a substrate in quaternary amination reaction with trialkylamine which is an important step in betaine (such as carnitine) preparation processes, it becomes possible to reduce the production of crotonic acid derivatives (the major by-product) greatly compared to conventional processes. Consequently, it becomes possible to prepare a betaine, such as carnitine, at a high yield.The present invention also relates to a process for preparing a betaine represented by formula (1) below, comprising a step of quaternary aminating an amide represented by formula (2) below: wherein A1, A2 and A3 individually represent a C1-C20 hydrocarbon group which may have a substituent(s); and X1 is a halogen atom.
    • 根据本发明,通过在作为甜菜碱(例如肉碱)制备方法中的重要步骤的三烷基胺的季胺化反应中使用4-卤代-3-羟基丁酰胺作为底物,可以减少巴豆酸衍生物的生产 (主要副产品)与常规工艺相比大大增加。 因此,可以以高收率制备甜菜碱,如肉毒碱。 本发明还涉及由下式(1)表示的甜菜碱的制备方法,该方法包括下述式(2)表示的酰胺季铵化的步骤:其中A1,A2和A3各自表示C1-C20烃基 其可以具有取代基; X1是卤原子。