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    • 31. 发明申请
    • Vehicle water drainage structure
    • 车辆排水结构
    • US20070007797A1
    • 2007-01-11
    • US11480550
    • 2006-07-05
    • Hiroshi Seki
    • Hiroshi Seki
    • B60R27/00
    • B60H1/3233
    • A water drainage structure is provided to prevent drainage water from getting on hot components inside the engine compartment and suppress the occurrence of evaporation noise. At least one water drainage opening is provided in a bottom portion of a vehicle member arranged on the under surface of a floor panel of a vehicle. The downstream end portion of a water drainage pipe is arranged to communicate with the inside of a closed cross sectional structure formed by the floor panel and the vehicle member. Drainage water from a vehicle device flows out of the downstream end portion of the water drainage pipe and is discharged to the outside of the vehicle through the water drainage openings of the vehicle member. As a result, the drainage water is prevented from getting on hot components inside the engine compartment of the vehicle and the occurrence of evaporation noise is suppressed.
    • 提供排水结构,以防止排水从发动机舱内的热部件上排出,并抑制蒸发噪音的发生。 至少一个排水口设置在布置在车辆底板的下表面上的车辆构件的底部中。 排水管的下游端部布置成与由地板镶板和车辆构件形成的封闭横截面结构的内部连通。 来自车辆装置的排水从排水管的下游端部流出,并通过车辆部件的排水口排出到车辆的外部。 结果,能够防止排水在车内的发动机室内发热,能够抑制蒸发噪音的发生。
    • 32. 发明授权
    • Semiconductor integrated circuit that handles the input/output of a signal with an external circuit
    • 用于处理具有外部电路的信号的输入/输出的半导体集成电路
    • US07126859B2
    • 2006-10-24
    • US10853007
    • 2004-05-25
    • Hiroshi Seki
    • Hiroshi Seki
    • G11C16/04
    • H01L27/092H03K19/00315
    • A semiconductor integrated circuit that handles the input/output of a signal with an external circuit. The circuit includes a transistor transmitting a signal between the external circuit and an internal circuit with a drain/source therebetween at a given gate voltage. A first gate voltage supply circuit supplies a voltage at the gate of the transistor when supplied with a first power voltage at a first level of a control signal. A second gate voltage supply circuit supplies a voltage at the gate of the transistor when supplied with a second power voltage that is lower than the first power voltage at a second level of a control signal.
    • 一种用外部电路处理信号的输入/输出的半导体集成电路。 电路包括在给定的栅极电压下在外部电路和内部电路之间传输信号的晶体管,其中漏极/源极之间的信号。 第一栅极电压供应电路在被提供有控制信号的第一电平的第一电源电压时,提供在晶体管的栅极处的电压。 第二栅极电压供应电路在被提供具有低于控制信号的第二电平处的第一电源电压的第二电源电压时,在晶体管的栅极处提供电压。
    • 33. 发明授权
    • Semiconductor integrated circuit
    • 半导体集成电路
    • US06861724B2
    • 2005-03-01
    • US10647529
    • 2003-08-26
    • Hiroshi Seki
    • Hiroshi Seki
    • H01L27/04H01L21/822H03K17/687H03K19/00H03K19/0175H03K19/0185H01L29/00
    • H03K19/018521
    • The invention provides an integrated circuit that permits input of a signal of a potential which is higher than a power supply voltage supplied to an interface circuit and also higher than a maximum rated voltage allowable for a gate electrode of a transistor forming an interface circuit, even in a non-access mode. The invention can include a gate voltage control circuit that produces a gate voltage to be applied to a gate electrode of a transfer gate which is connected between an external input terminal and an input end of an input buffer and transmits an external signal input from the external input terminal to the input end of the input buffer. The gate voltage control circuit outputs, as the gate voltage, a voltage produced based on a relatively high first voltage to be applied as a power supply voltage of a semiconductor integrated circuit in the access mode while outputting, as the gate voltage, a voltage produced based on a relatively low second voltage to be applied as a power supply voltage of the semiconductor integrated circuit in the non-access mode.
    • 本发明提供了一种集成电路,其允许输入高于提供给接口电路的电源电压的电位信号,并且还高于形成接口电路的晶体管的栅电极允许的最大额定电压,甚至 处于非访问模式。 本发明可以包括栅极电压控制电路,其产生要施加到传输门的栅电极的栅极电压,栅极电压连接在外部输入端子和输入缓冲器的输入端之间,并且传输从外部输入的外部信号 输入端到输入缓冲器的输入端。 栅极电压控制电路作为栅极电压输出基于要作为半导体集成电路的电源电压施加的相对高的第一电压产生的电压,作为栅极电压,作为栅极电压产生电压 基于作为非接入模式中的半导体集成电路的电源电压施加的相对低的第二电压。
    • 40. 发明授权
    • Clock switch circuit and clock switch method of the same
    • 时钟开关电路和时钟切换方法相同
    • US08253449B2
    • 2012-08-28
    • US12787687
    • 2010-05-26
    • Hiroshi SekiKiyoshi Kirino
    • Hiroshi SekiKiyoshi Kirino
    • H03K21/00H03K23/00H03K25/00
    • H03K23/667G06F1/08
    • A clock switch circuit includes a frequency divide circuit which divides a frequency of a basic clock to generate a plurality of frequency-divided clocks, an output select signal generation circuit which outputs an output select signal according to a clock select signal, and an output select circuit which switches a clock to be output according to the output select signal, in which the frequency divide circuit outputs a plurality of frequency-divided count values indicating the number of clocks of the basic clock from start of one cycle of each of the frequency-divided clocks, and the output select signal generation circuit switches a value of the output select signal at timings at which start timings of cycles of frequency-divided clocks before and after switch operation are matched based on a frequency-divided count value corresponding to a current selection clock among the plurality of frequency-divided count values.
    • 时钟切换电路包括:分频电路,其分频基本时钟的频率以产生多个分频时钟;输出选择信号产生电路,其根据时钟选择信号输出输出选择信号;以及输出选择 电路,其根据输出选择信号切换要输出的时钟,其中,分频电路从频率分配电路的每一个的一个周期的开始输出指示基本时钟的时钟数的多个分频计数值, 并且输出选择信号发生电路在开关操作之前和之后的分频时钟的开始周期的开始定时基于对应于电流的分频计数值的定时处切换输出选择信号的值 多个分频计数值中的选择时钟。