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31. 发明授权

US08168523B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08168523B2
公开(公告)日：2012-05-01
申请号：US12986243
申请日：2011-01-07
申请人： Hideto Ohnuma , Masayuki Sakakura
发明人： Hideto Ohnuma , Masayuki Sakakura
IPC分类号： H01L21/3205
CPC分类号： H01L27/127 , H01L21/0273 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L27/1288 , H01L27/3244 , H01L27/3276 , H01L51/5237 , H01L51/5246 , H01L51/5259
摘要： The invention provides a technique to manufacture a highly reliable semiconductor device and a display device at high yield. As an exposure mask, an exposure mask provided with a diffraction grating pattern or an auxiliary pattern formed of a semi-transmissive film with a light intensity reducing function is used. With such an exposure mask, various light exposures can be more accurately controlled, which enables a resist to be processed into a more accurate shape. Therefore, when such a mask layer is used, the conductive film and the insulating film can be processed in the same step into different shapes in accordance with desired performances. As a result, thin film transistors with different characteristics, wires in different sizes and shapes, and the like can be manufactured without increasing the number of steps.
摘要翻译：本发明提供了以高产率制造高度可靠的半导体器件和显示器件的技术。作为曝光掩模，使用设置有衍射光栅图案的曝光掩模或由具有光强度降低功能的半透射膜形成的辅助图案。通过这种曝光掩模，可以更精确地控制各种光照射，这使得抗蚀剂能够被加工成更准确的形状。因此，当使用这种掩模层时，导电膜和绝缘膜可以根据期望的性能在同一步骤中被加工成不同的形状。结果，可以在不增加步数的情况下制造具有不同特性的薄膜晶体管，不同尺寸和形状的导线等。

32. 发明申请

US20110111585A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20110111585A1
公开(公告)日：2011-05-12
申请号：US12986243
申请日：2011-01-07
申请人： Hideto Ohnuma , Masayuki Sakakura
发明人： Hideto Ohnuma , Masayuki Sakakura
IPC分类号： H01L21/28
CPC分类号： H01L27/127 , H01L21/0273 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L27/1288 , H01L27/3244 , H01L27/3276 , H01L51/5237 , H01L51/5246 , H01L51/5259
摘要： The invention provides a technique to manufacture a highly reliable semiconductor device and a display device at high yield. As an exposure mask, an exposure mask provided with a diffraction grating pattern or an auxiliary pattern formed of a semi-transmissive film with a light intensity reducing function is used. With such an exposure mask, various light exposures can be more accurately controlled, which enables a resist to be processed into a more accurate shape. Therefore, when such a mask layer is used, the conductive film and the insulating film can be processed in the same step into different shapes in accordance with desired performances. As a result, thin film transistors with different characteristics, wires in different sizes and shapes, and the like can be manufactured without increasing the number of steps.
摘要翻译：本发明提供了以高产率制造高度可靠的半导体器件和显示器件的技术。作为曝光掩模，使用设置有衍射光栅图案的曝光掩模或由具有光强度降低功能的半透射膜形成的辅助图案。通过这种曝光掩模，可以更精确地控制各种光照射，这使得抗蚀剂能够被加工成更准确的形状。因此，当使用这种掩模层时，导电膜和绝缘膜可以根据期望的性能在同一步骤中被加工成不同的形状。结果，可以在不增加步数的情况下制造具有不同特性的薄膜晶体管，不同尺寸和形状的导线等。

33. 发明授权

US07625785B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07625785B2
公开(公告)日：2009-12-01
申请号：US11896155
申请日：2007-08-30
申请人： Hideto Ohnuma , Masayuki Sakakura , Yasuhiro Mitani , Takuya Matsuo , Hidehito Kitakado
发明人： Hideto Ohnuma , Masayuki Sakakura , Yasuhiro Mitani , Takuya Matsuo , Hidehito Kitakado
IPC分类号： H01L21/84
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/12 , H01L27/1277
摘要： A semiconductor device having a crystalline semiconductor film with production of a cavity suppressed and a manufacturing method thereof A manufacturing method of a semiconductor device according to the invention comprises the steps of forming an amorphous silicon film on a substrate having an insulating surface, adding a metal element such as Ni for promoting crystallization to the amorphous silicon film, applying heat treatment to crystallize the amorphous silicon film, so that a crystalline silicon film is formed on the substrate, removing a silicon oxide film formed on the surface of the crystalline silicon film due to the heat treatment by a solution containing organic solvent and fluoride, and irradiating laser light or strong light to the crystalline silicon film.
摘要翻译：具有抑制空腔制造的结晶半导体膜的半导体器件及其制造方法本发明的半导体器件的制造方法包括以下步骤：在具有绝缘表面的基板上形成非晶硅膜，添加金属元素如Ni，用于促进结晶到非晶硅膜，进行热处理以使非晶硅膜结晶，从而在基板上形成晶体硅膜，去除在晶体硅膜表面形成的氧化硅膜，通过含有有机溶剂和氟化物的溶液进行热处理，并向结晶硅膜照射激光或强光。

34. 发明申请

US20050142702A1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050142702A1
公开(公告)日：2005-06-30
申请号：US11012171
申请日：2004-12-16
申请人： Hideto Ohnuma , Masayuki Sakakura , Yasuhiro Mitani , Takuya Matsuo , Hidehito Kitakado
发明人： Hideto Ohnuma , Masayuki Sakakura , Yasuhiro Mitani , Takuya Matsuo , Hidehito Kitakado
IPC分类号： H01L29/786 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/10 , H01L21/00 , H01L29/76 , H01L31/036 , H01L31/112
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/12 , H01L27/1277
摘要： A semiconductor device having a crystalline semiconductor film with production of a cavity suppressed and a manufacturing method thereof. A manufacturing method of a semiconductor device according to the invention comprises the steps of forming an amorphous silicon film on a substrate having an insulating surface, adding a metal element such as Ni for promoting crystallization to the amorphous silicon film, applying heat treatment to crystallize the amorphous silicon film, so that a crystalline silicon film is formed on the substrate, removing a silicon oxide film formed on the surface of the crystalline silicon film due to the heat treatment by a solution containing organic solvent and fluoride, and irradiating laser light or strong light to the crystalline silicon film.
摘要翻译：具有抑制空腔制造的结晶半导体膜的半导体器件及其制造方法。根据本发明的半导体器件的制造方法包括以下步骤：在具有绝缘表面的衬底上形成非晶硅膜，向非晶硅膜中添加用于促进结晶的Ni等金属元素，进行热处理，使结晶非晶硅膜，使得在基板上形成结晶硅膜，通过含有机溶剂和氟化物的溶液进行热处理，除去形成在结晶硅膜表面的氧化硅膜，并照射激光或强力光结晶硅膜。

35. 发明授权

US07439111B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07439111B2
公开(公告)日：2008-10-21
申请号：US11221767
申请日：2005-09-09
申请人： Hisashi Ohtani , Koji Moriya , Masayuki Sakakura , Hideto Ohnuma
发明人： Hisashi Ohtani , Koji Moriya , Masayuki Sakakura , Hideto Ohnuma
IPC分类号： H01L21/336 , H01L21/84
CPC分类号： H01L27/1248 , H01L27/1214
摘要： An object of the invention is to form an insulating film having favorable insulation and planarity. An insulating film is formed by performing heat treatment a resin containing a siloxane polymer after application, in an atmosphere including an inert gas as its main component and having an oxygen concentration of 5% or less and a water concentration of 1% or less. Preferably, an oxygen concentration is 1% or less and a water concentration is 0.1% or less. The resin containing a siloxane polymer includes a methyl group and a phenyl group. Further, the inert gas is nitrogen.
摘要翻译：本发明的目的是形成具有良好绝缘性和平坦性的绝缘膜。通过在包含惰性气体为主要成分并且氧浓度为5％以下，水浓度为1％以下的气氛中，对涂布后的含有硅氧烷聚合物的树脂进行热处理而形成绝缘膜。氧浓度优选为1％以下，水浓度为0.1％以下。含有硅氧烷聚合物的树脂包括甲基和苯基。此外，惰性气体是氮气。

36. 发明申请

US20120202331A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120202331A1
公开(公告)日：2012-08-09
申请号：US13449383
申请日：2012-04-18
申请人： Hideto Ohnuma , Masayuki Sakakura
发明人： Hideto Ohnuma , Masayuki Sakakura
IPC分类号： H01L21/336
CPC分类号： H01L27/127 , H01L21/0273 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L27/1288 , H01L27/3244 , H01L27/3276 , H01L51/5237 , H01L51/5246 , H01L51/5259
摘要： The invention provides a technique to manufacture a highly reliable semiconductor device and a display device at high yield. As an exposure mask, an exposure mask provided with a diffraction grating pattern or an auxiliary pattern formed of a semi-transmissive film with a light intensity reducing function is used. With such an exposure mask, various light exposures can be more accurately controlled, which enables a resist to be processed into a more accurate shape. Therefore, when such a mask layer is used, the conductive film and the insulating film can be processed in the same step into different shapes in accordance with desired performances. As a result, thin film transistors with different characteristics, wires in different sizes and shapes, and the like can be manufactured without increasing the number of steps.
摘要翻译：本发明提供了以高产率制造高度可靠的半导体器件和显示器件的技术。作为曝光掩模，使用设置有衍射光栅图案的曝光掩模或由具有光强度降低功能的半透射膜形成的辅助图案。通过这种曝光掩模，可以更精确地控制各种光照射，这使得抗蚀剂能够被加工成更准确的形状。因此，当使用这种掩模层时，导电膜和绝缘膜可以根据期望的性能在同一步骤中被加工成不同的形状。结果，可以在不增加步数的情况下制造具有不同特性的薄膜晶体管，不同尺寸和形状的导线等。

37. 发明授权

US07867791B2 Manufacturing method of semiconductor device using multiple mask layers formed through use of an exposure mask that transmits light at a plurality of intensities 有权
标题翻译：使用通过使用以多个强度透射光的曝光掩模形成的多个掩模层的半导体器件的制造方法
公开(公告)号：US07867791B2
公开(公告)日：2011-01-11
申请号：US11458266
申请日：2006-07-18
申请人： Hideto Ohnuma , Masayuki Sakakura
发明人： Hideto Ohnuma , Masayuki Sakakura
IPC分类号： H01L21/00
CPC分类号： H01L27/127 , H01L21/0273 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L27/1288 , H01L27/3244 , H01L27/3276 , H01L51/5237 , H01L51/5246 , H01L51/5259
摘要： The invention provides a technique to manufacture a highly reliable semiconductor device and a display device at high yield. As an exposure mask, an exposure mask provided with a diffraction grating pattern or an auxiliary pattern formed of a semi-transmissive film with a light intensity reducing function is used. With such an exposure mask, various light exposures can be more accurately controlled, which enables a resist to be processed into a more accurate shape. Therefore, when such a mask layer is used, the conductive film and the insulating film can be processed in the same step into different shapes in accordance with desired performances. As a result, thin film transistors with different characteristics, wires in different sizes and shapes, and the like can be manufactured without increasing the number of steps.
摘要翻译：本发明提供了以高产率制造高度可靠的半导体器件和显示器件的技术。作为曝光掩模，使用设置有衍射光栅图案的曝光掩模或由具有光强度降低功能的半透射膜形成的辅助图案。通过这种曝光掩模，可以更精确地控制各种光照射，这使得抗蚀剂能够被加工成更准确的形状。因此，当使用这种掩模层时，导电膜和绝缘膜可以根据期望的性能在同一步骤中被加工成不同的形状。结果，可以在不增加步数的情况下制造具有不同特性的薄膜晶体管，不同尺寸和形状的导线等。

38. 发明申请

US20100025768A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100025768A1
公开(公告)日：2010-02-04
申请号：US12558618
申请日：2009-09-14
申请人： Masayuki Sakakura , Hideto Ohnuma , Hideaki Kuwabara
发明人： Masayuki Sakakura , Hideto Ohnuma , Hideaki Kuwabara
IPC分类号： H01L23/522 , H01L29/423 , H01L21/768 , H01L21/28
CPC分类号： H01L27/1244 , H01L21/32139 , H01L21/76816 , H01L21/76834 , H01L21/76879 , H01L21/76886 , H01L23/528 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1259 , H01L27/1274 , H01L27/1288 , H01L27/3276 , H01L2924/0002 , H01L2924/00
摘要： It is an object of the present invention to provide a method for preventing a breaking and poor contact, without increasing the number of steps, thereby forming an integrated circuit with high driving performance and reliability. The present invention applies a photo mask or a reticle each of which is provided with a diffraction grating pattern or with an auxiliary pattern formed of a semi-translucent film having a light intensity reducing function to a photolithography step for forming wires in an overlapping portion of wires. And a conductive film to serve as a lower wire of a two-layer structure is formed, and then, a resist pattern is formed so that a first layer of the lower wire and a second layer narrower than the first layer are formed for relieving a steep step.
摘要翻译：本发明的目的是提供一种防止接触不良而不增加步数的方法，从而形成具有高驱动性能和可靠性的集成电路。本发明应用了一种光掩模或掩模版，每个光掩模或光掩模具有衍射光栅图案或由具有光强度降低功能的半透明膜形成的辅助图案，用于在光刻步骤中形成导线的重叠部分电线并且形成用作二层结构的下导线的导电膜，然后形成抗蚀剂图案，使得形成下线的第一层和比第一层窄的第二层以缓解陡峭的一步。

39. 发明授权

US07276402B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07276402B2
公开(公告)日：2007-10-02
申请号：US11012171
申请日：2004-12-16
申请人： Hideto Ohnuma , Masayuki Sakakura , Yasuhiro Mitani , Takuya Matsuo , Hidehito Kitakado
发明人： Hideto Ohnuma , Masayuki Sakakura , Yasuhiro Mitani , Takuya Matsuo , Hidehito Kitakado
IPC分类号： H01L21/84
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/12 , H01L27/1277
摘要： A semiconductor device having a crystalline semiconductor film with production of a cavity suppressed and a manufacturing method thereof. A manufacturing method of a semiconductor device according to the invention comprises the steps of forming an amorphous silicon film on a substrate having an insulating surface, adding a metal element such as Ni for promoting crystallization to the amorphous silicon film, applying heat treatment to crystallize the amorphous silicon film, so that a crystalline silicon film is formed on the substrate, removing a silicon oxide film formed on the surface of the crystalline silicon film due to the heat treatment by a solution containing organic solvent and fluoride, and irradiating laser light or strong light to the crystalline silicon film.
摘要翻译：具有抑制空腔制造的结晶半导体膜的半导体器件及其制造方法。根据本发明的半导体器件的制造方法包括以下步骤：在具有绝缘表面的衬底上形成非晶硅膜，向非晶硅膜中添加用于促进结晶的Ni等金属元素，进行热处理，使结晶非晶硅膜，使得在基板上形成结晶硅膜，通过含有机溶剂和氟化物的溶液进行热处理，除去形成在结晶硅膜表面的氧化硅膜，并照射激光或强力光结晶硅膜。

40. 发明申请

US20060079039A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060079039A1
公开(公告)日：2006-04-13
申请号：US11221767
申请日：2005-09-09
申请人： Hisashi Ohtani , Koji Moriya , Masayuki Sakakura , Hideto Ohnuma
发明人： Hisashi Ohtani , Koji Moriya , Masayuki Sakakura , Hideto Ohnuma
IPC分类号： H01L21/84
CPC分类号： H01L27/1248 , H01L27/1214
摘要： An object of the invention is to form an insulating film having favorable insulation and planarity. An insulating film is formed by performing heat treatment a resin containing a siloxane polymer after application, in an atmosphere including an inert gas as its main component and having an oxygen concentration of 5% or less and a water concentration of 1% or less. Preferably, an oxygen concentration is 1% or less and a water concentration is 0.1% or less. The resin containing a siloxane polymer includes a methyl group and a phenyl group. Further, the inert gas is nitrogen.
摘要翻译：本发明的目的是形成具有良好绝缘性和平坦性的绝缘膜。通过在包含惰性气体为主要成分并且氧浓度为5％以下，水浓度为1％以下的气氛中，对涂布后的含有硅氧烷聚合物的树脂进行热处理而形成绝缘膜。氧浓度优选为1％以下，水浓度为0.1％以下。含有硅氧烷聚合物的树脂包括甲基和苯基。此外，惰性气体是氮气。

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