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31. 发明授权

US06912237B2 Semiconductor laser module and semiconductor laser device having light feedback function 有权
标题翻译：具有光反馈功能的半导体激光器模块和半导体激光器件
公开(公告)号：US06912237B2
公开(公告)日：2005-06-28
申请号：US10062397
申请日：2002-01-31
申请人： Michio Ohkubo , Yutaka Ohki
发明人： Michio Ohkubo , Yutaka Ohki
IPC分类号： H01S5/14 , H01S5/30 , H01S5/34 , H01S5/343 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/146 , H01S5/305 , H01S5/34 , H01S5/3403 , H01S5/3407 , H01S5/343
摘要： A semiconductor laser module is provided for emitting pumping laser light which excels in temporal stability. The semiconductor laser module comprises a semiconductor laser device which has a layered structure formed on a GaAs substrate, wherein the layered structure has an active layer in a quantum well structure, formed of semiconductor materials including Ga and As, and a member having a light feedback function. The two components are optically coupled. A well layer in the active layer of the semiconductor laser device is a thick layer having a thickness of 10 nm or more. The active layer is doped with Si, and an n-type cladding layer underlying the active layer is also doped with Si.
摘要翻译：提供半导体激光器模块，用于发射时间稳定性优异的泵浦激光。半导体激光器模块包括具有形成在GaAs衬底上的层状结构的半导体激光器件，其中层状结构具有由包括Ga和As的半导体材料形成的量子阱结构中的有源层，以及具有光反馈功能。两个组件是光耦合的。半导体激光器件的有源层中的阱层是厚度为10nm以上的厚层。有源层掺杂有Si，有源层下面的n型覆层也掺杂有Si。

32. 发明授权

US06670211B2 Semiconductor laser device 失效
公开(公告)号：US06670211B2
公开(公告)日：2003-12-30
申请号：US09876278
申请日：2001-06-06
申请人： Michio Ohkubo
发明人： Michio Ohkubo
IPC分类号： H01L2100
CPC分类号： H01S5/164 , H01S5/0202 , H01S5/22 , H01S5/4031
摘要： A exemplary method of fabricating a semiconductor laser device includes forming an electrode on each of a top surface and a bottom surface of a laminated structure comprised of semiconductor materials, then cleaving the laminated structure to form facets of a cavity, and next epitaxially growing a compound semiconductor on the facets of the cavity. Works involved in the cleavage and the epitaxial crystal growth are performed in a low oxygen and moisture concentration atmosphere, so that the occurrence of COD is suppressed in the fabricated semiconductor laser device.

33. 发明授权

US5929461A Optical semiconductor device having a semiconductor laminate mirror 失效
标题翻译：具有半导体层叠反射镜的光半导体器件
公开(公告)号：US5929461A
公开(公告)日：1999-07-27
申请号：US877768
申请日：1997-06-17
申请人： Takeharu Yamaguchi , Michio Ohkubo , Takao Ninomiya
发明人： Takeharu Yamaguchi , Michio Ohkubo , Takao Ninomiya
IPC分类号： H01S5/00 , H01S5/183 , H01L29/06 , H01L33/00
CPC分类号： H01L33/105 , H01S5/1838 , H01S5/0207 , H01S5/18308 , H01S5/3202 , H01S5/32358
摘要： A surface emission semiconductor laser device has a semiconductor laminate mirror constituted of a plurality of pairs of InGaAS/InAlP films epitaxially grown on a GaAs or InGaAs substrate and a laser element bonded to the laminate mirror. The InAlP films of the laminate mirror are lattice-matched or not lattice-matched due to the amount of Al in the InAlP films. The laminate mirror has a high relative refractive index between the InGaAs and InAlP films and thus has a high reflectance to thereby improve the emission efficiency of the surface emission laser device.
摘要翻译：表面发射半导体激光器件具有由在GaAs或InGaAs衬底上外延生长的多对InGaAS / InAlP膜和结合到层叠反射镜的激光元件构成的半导体层叠反射镜。由于InAlP膜中Al的量，层压反射镜的InAlP膜是晶格匹配的或不是晶格匹配的。层叠反射镜在InGaAs和InAlP膜之间具有高相对折射率，因此具有高反射率，从而提高了表面发射激光器件的发射效率。

34. 发明授权

US5832018A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5832018A
公开(公告)日：1998-11-03
申请号：US796789
申请日：1997-02-06
申请人： Michio Ohkubo
发明人： Michio Ohkubo
IPC分类号： H01S5/00 , H01S5/22 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34313 , H01S5/22 , H01S5/3407
摘要： A semiconductor laser device has a GaAs substrate (11), a single- or multiple-quantum well (QW) structure including at least one InGaAs strained QW active layer (16), a pair of GaAsP or In.sub.z Ga.sub.1-z AsP barrier layers (15,17) (z.ltoreq.0.3) interposing therebetween the QW structure, and a pair of AlGaAs cladding layers (13, 19) sandwiching the pair of barrier layers (15,17) and the QW structure as a whole. The semiconductor laser prevents a catastrophic optical damage (COD) caused by recombination current due to the presence of aluminum and exhibits a high optical output power.
摘要翻译：一种半导体激光器件具有GaAs衬底（11），包括至少一个InGaAs应变QW有源层（16），一对GaAsP或InzGa1-zAsP势垒层（15）的单量子阱或多量子阱（QW） 17）（z <0.3）插入其间的QW结构，以及一对AlGaAs覆层（13,19），其夹持该对阻挡层（15,17）和QW结构作为整体。半导体激光器防止由于铝的存在而导致的复合电流引起的灾难性光学损伤（COD）并表现出高的光输出功率。

35. 发明授权

US5757833A Semiconductor laser having a transparent light emitting section, and a process of producing the same 失效
标题翻译：具有透明发光部的半导体激光器及其制造方法
公开(公告)号：US5757833A
公开(公告)日：1998-05-26
申请号：US742866
申请日：1996-11-01
申请人： Satoshi Arakawa , Norihiro Iwai , Takuya Ishikawa , Akihiko Kasukawa , Michio Ohkubo , Takao Ninomiya
发明人： Satoshi Arakawa , Norihiro Iwai , Takuya Ishikawa , Akihiko Kasukawa , Michio Ohkubo , Takao Ninomiya
IPC分类号： H01S5/16 , H01S5/227 , H01S5/343 , H01S3/19 , H01L21/20
CPC分类号： B82Y20/00 , H01S5/164 , H01S5/343 , H01S2302/00 , H01S5/2272 , H01S5/34306 , H01S5/34313
摘要： A semiconductor laser is produced by forming a laser activation section and a light emitting section having an InGaAsP layer as a quantum well on a GaAs substrate according to metal organic chemical vapor deposition by using a selective area growth mask, in such a manner that the laser activation section and the light emitting section have different film thicknesses. The laser activation section includes a laser activation layer whose oscillation wavelength is set to 0.8 to 1.1 .mu.m, and the light emitting section includes an optical waveguide layer having a broader forbidden band than the laser activation layer.
摘要翻译：通过使用选择性区域生长掩模，通过使用选择性区域生长掩模，通过在GaAs衬底上形成激光激活部分和具有InGaAsP层作为量子阱的发光部分来制造半导体激光器，激光器激活部分和发光部分具有不同的膜厚度。激光激活部包括振荡波长设定为0.8〜1.1μm的激光激活层，发光部具有比激光活化层更宽的禁带宽度的光波导层。

36. 发明授权

US5710439A Optoelectronic integrated device having optical elements and electronic elements grown in a monolithic form on a GaAs ssubstrate 失效
标题翻译：光电子集成器件具有在GaAs衬底上以单片形式生长的光学元件和电子元件
公开(公告)号：US5710439A
公开(公告)日：1998-01-20
申请号：US770552
申请日：1996-12-23
申请人： Michio Ohkubo
发明人： Michio Ohkubo
IPC分类号： H01L27/14 , H01L21/338 , H01L27/144 , H01L27/15 , H01L29/778 , H01L29/812 , H01L33/06 , H01L33/10 , H01L33/12 , H01L33/14 , H01L33/32 , H01S5/00 , H01S5/026 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L27/1443
摘要： In an optoelectronic integrated device having an optical element section in the wavelength region of 1.33 to 1.55 .mu.m and an electronic element section such as an HEMT integrated in a monolithic form on a GaAs substrate, the optical element section includes light receiving elements or light emitting elements, and an optical absorption layer of the light receiving element or a semiconductor layer forming an active layer of the light emitting element is formed of GaAsN-series compound semiconductor which is lattice-matching with the GaAs substrate, particularly, one of GaAsN, InGaAsN, InGaAsPN, GaAlAsN, InGalAsN, AlGaAsPN and InGaAlAsPN.
摘要翻译：在具有1.33〜1.55μm的波长范围的光学元件部和在GaAs基板上以单体形式集成的HEMT等电子元件部的光电集成装置中，所述光学元件部包括受光元件或发光元素和光接收元件的光吸收层或形成发光元件的有源层的半导体层由GaAsN系化合物半导体形成，GaAsN系化合物半导体与GaAs衬底，特别是GaAsN，InGaAsN ，InGaAsPN，GaAlAsN，InGaAsN，AlGaAsPN和InGaAlAsPN。

37. 发明授权

US5388116A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5388116A
公开(公告)日：1995-02-07
申请号：US125848
申请日：1993-09-24
申请人： Michio Ohkubo , Toshio Kikuta
发明人： Michio Ohkubo , Toshio Kikuta
IPC分类号： H01S5/042 , H01S5/16 , H01S5/223 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/16 , H01S5/0425 , H01S5/168 , H01S5/2231 , H01S5/3211 , H01S5/32308
摘要： There is provided a semiconductor laser device that can be driven for a high-output power level without degradation in the quality of the device. It comprises a double heterostructure including an active layer (5, 25) and an electrode layer (9, 29) arranged on a semiconductor substrate (1, 21) having a current injection region extending through the electrode layer (9, 29) and the active layer (5, 25), a structural scheme being provided either in a region located above the active layer (5, 25) or in a region covering an resonator of the active layer (5, 25) in order to reduce the injection current level of the device. With such an arrangement, the energy output level of the semiconductor laser device is remarkably enhanced and its reliability is greatly improved, because it can be driven for a high-output power level without degradation in the quality of the device.
摘要翻译：提供了可以驱动高输出功率电平而不降低器件质量的半导体激光器件。它包括一个双异质结构，包括有源层（5,25）和布置在半导体衬底上的电极层（9,29），该半导体衬底具有延伸穿过电极层（9,29）的电流注入区域，并且有源层（5,25），结构方案设置在位于有源层（5,25）上方的区域中或覆盖有源层（5,25）的谐振器的区域中，以便降低注入电流设备级别。通过这样的配置，可以显着提高半导体激光器件的能量输出电平，并且其可靠性大大提高，因为可以驱动高输出功率电平而不会降低器件的质量。

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