专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US06445557B1 Method and apparatus for performing a short-circuit and overload disconnection with a semiconductor component 有权
标题翻译：用半导体元件进行短路和过载断线的方法和装置
公开(公告)号：US06445557B1
公开(公告)日：2002-09-03
申请号：US09607319
申请日：2000-06-30
申请人： Ulrich Weinert , Gerd Griepentrog
发明人： Ulrich Weinert , Gerd Griepentrog
IPC分类号： H02H700
CPC分类号： H02H3/08 , H03K17/0822 , H03K17/166 , H03K2017/6875 , H03K2217/0036
摘要： A method for performing a short-circuit and overload disconnection with a semiconductor component includes the steps of providing a semiconductor component having a drain, a source and a gate. The semiconductor component has a gate-source voltage applied thereto, a current flowing therethrough, and a voltage dropping between the source and the drain. The gate-source voltage at the semiconductor component is adjusted, in dependence of the current flowing through the semiconductor component, such that, after charge carriers in the semiconductor component are depleted, the voltage dropping between the source and the drain assumes a highest possible value still uncritical for the semiconductor component and for a circuit to be disconnected. An algorithm is used for the step of adjusting the voltage dropping between the source and the drain. The apparatus for carrying out the method uses of a processor for ascertaining and processing measured values and for performing the short-circuit recognition and the disconnection.
摘要翻译：用半导体元件进行短路和过载断线的方法包括提供具有漏极，源极和栅极的半导体元件的步骤。半导体元件具有施加于其上的栅极 - 源极电压，流过其中的电流以及在源极和漏极之间的电压下降。根据流过半导体元件的电流调整半导体元件处的栅极 - 源极电压，使得在半导体元件中的电荷载流子耗尽之后，源极和漏极之间的电压下降呈现最高可能值对于半导体元件和电路断开连续仍然不重要。用于调节源极和漏极之间的电压降的步骤的算法。用于执行方法的装置用于确定和处理测量值并执行短路识别和断开。

IPRDB

热门服务

关于我们

友情链接

联系方式