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    • 31. 发明申请
    • Method and structure for second spacer formation for strained silicon MOS transistors
    • 用于应变硅MOS晶体管的第二间隔物形成的方法和结构
    • US20070077716A1
    • 2007-04-05
    • US11243707
    • 2005-10-04
    • John ChenXian NingHanming Wu
    • John ChenXian NingHanming Wu
    • H01L21/336H01L21/8238H01L21/8234
    • H01L29/66545H01L21/823807H01L21/823814H01L21/823864H01L29/66636H01L29/7848
    • A method for forming a CMOS semiconductor wafer. The method includes providing a semiconductor substrate (e.g., silicon wafer) and forming a dielectric layer (e.g., silicon dioxide, silicon oxynitride) overlying the semiconductor substrate. The method includes forming a gate layer overlying the dielectric layer and patterning the gate layer to form a gate structure including edges. The method includes forming a dielectric layer overlying the gate structure to protect the gate structure including the edges. Preferably, the dielectric layer has a thickness of less than 40 nanometers. The method includes etching a source region and a drain region adjacent to the gate structure using the dielectric layer as a protective layer and depositing silicon germanium material into the source region and the drain region to fill the etched source region and the etched drain region. The method causes a channel region between the source region and the drain region to be strained in compressive mode from at least the silicon germanium material formed in the source region and the drain region. The method includes forming a second protective layer overlying surfaces and performing an anisotropic etching process to form spacer structures to seal the gate structure.
    • 一种用于形成CMOS半导体晶片的方法。 该方法包括提供半导体衬底(例如硅晶片)并形成覆盖半导体衬底的电介质层(例如,二氧化硅,氮氧化硅)。 该方法包括形成覆盖在介电层上的栅极层,并构图栅极层以形成包括边缘的栅极结构。 该方法包括形成覆盖栅极结构的电介质层,以保护包括边缘的栅极结构。 优选地,电介质层的厚度小于40纳米。 该方法包括使用电介质层作为保护层蚀刻与栅极结构相邻的源极区域和漏极区域,并将硅锗材料沉积到源极区域和漏极区域中以填充蚀刻的源极区域和蚀刻的漏极区域。 该方法使得源极区域和漏极区域之间的沟道区域至少在形成于源极区域和漏极区域中的硅锗材料以压缩模式应变。 该方法包括形成覆盖表面的第二保护层,并执行各向异性蚀刻工艺以形成间隔结构以密封栅极结构。
    • 38. 发明授权
    • Hammer having enhanced strength
    • 锤子力量增强
    • US07066052B2
    • 2006-06-27
    • US10956655
    • 2004-10-01
    • John Chen
    • John Chen
    • B25D11/02
    • B25G3/34B25D1/12
    • A hammer includes a handle, a hammer body mounted on an end of the handle and having a side formed with a combination bar inserted into the handle, and a protective jacket integrally formed on the handle to encompass a periphery of the combination bar and a mediate portion of the hammer body entirely. Thus, the protective jacket of the handle encompasses the periphery of the combination bar and the mediate portion of the hammer body entirely, so that the handle and the hammer body are combined with each other rigidly and stably, thereby enhancing the combination strength of the hammer.
    • 锤包括手柄,安装在手柄的端部上的锤体,并且具有形成有插入手柄中的组合杆的一侧,以及整体地形成在手柄上以包围组合杆的周边和中间体的保护套 部分锤体完全。 因此,手柄的保护护套整体包围组合杆的周边和锤体的中间部分,使得手柄和锤体彼此刚性和稳定地组合,从而提高锤的组合强度 。