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31. 发明授权

US07799813B2 Salts of substituted 5-membered azacycle and use thereof in the treatment of diseases related to protein aging 有权
标题翻译：取代的5元氮环的盐及其在治疗与蛋白质老化相关的疾病中的用途
公开(公告)号：US07799813B2
公开(公告)日：2010-09-21
申请号：US12223236
申请日：2007-01-29
申请人： Song Li , Hao Cui , Junhai Xiao , Wu Zhong , Lili Wang , Gang Cheng
发明人： Song Li , Hao Cui , Junhai Xiao , Wu Zhong , Lili Wang , Gang Cheng
IPC分类号： C07D277/60 , C07D277/30 , A61K31/428 , A61K31/426
CPC分类号： C07D277/62 , A23L3/3526
摘要： The present invention relates to 5-membered azacycle compounds of formula (I), pharmaceutically acceptable salts thereof and hydrates thereof, wherein the groups are as defined in the specification. The present invention further relates to pharmaceutical compositions containing said compounds or pharmaceutically acceptable salts thereof or hydrates thereof, and to use of the pharmaceutical compositions in (i) improving skin elasticity or reducing skin wrinkles, (ii) treating diabetes, (iii) treating or relieving adverse sequelae of diabetes, (iv) treating or relieving kidney damage, (v) treating or relieving damage to blood vasculature, (vi) treating or relieving hypertension, (vii) treating or relieving retinopathy, (viii) treating or relieving damage to lens proteins, (ix) treating or relieving cataract, (x) treating or relieving peripheral neuropathy, or (xi) treating or relieving osteoarthritis. The present invention further relates to use of said compounds or pharmaceutically acceptable salts thereof or hydrates thereof in the preparation of oral formulations for inhibiting or reversing tooth staining, or in the preparation of fresh-keeping agents for plant proteins of crops or animal proteins.
摘要翻译：本发明涉及式（I）的5元氮环化合物，其药学上可接受的盐及其水合物，其中基团如说明书中所定义。本发明还涉及含有所述化合物或其药学上可接受的盐或其水合物的药物组合物，以及（i）改善皮肤弹性或减少皮肤皱纹，（ii）治疗糖尿病，（iii）治疗或减轻糖尿病的不良后遗症，（iv）治疗或缓解肾脏损害，（v）治疗或缓解血液血管系统损伤，（vi）治疗或缓解高血压，（vii）治疗或缓解视网膜病变，（viii）治疗或缓解对（ix）治疗或缓解白内障，（x）治疗或缓解周围神经病变，或（xi）治疗或缓解骨关节炎。本发明还涉及所述化合物或其药学上可接受的盐或其水合物在制备用于抑制或逆转牙齿染色的口服制剂中的用途，或用于制备作物或动物蛋白质的植物蛋白质的保鲜剂。

32. 发明授权

US07728433B2 Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structures 失效
标题翻译：用于增加铜互连结构中的电迁移寿命的介电阻挡层
公开(公告)号：US07728433B2
公开(公告)日：2010-06-01
申请号：US11736402
申请日：2007-04-17
申请人： Hao Cui , Peter A. Burke , Wilbur G. Catabay
发明人： Hao Cui , Peter A. Burke , Wilbur G. Catabay
IPC分类号： H01L29/40
CPC分类号： H01L21/76832 , H01L21/76825 , H01L21/76826 , H01L21/76834 , H01L21/76883
摘要： Embodiments of the invention include a copper interconnect structure having increased electromigration lifetime. Such structures can include a semiconductor substrate having a copper layer formed thereon. A dielectric barrier stack is formed on the copper layer. The dielectric barrier stack includes a first portion formed adjacent to the copper layer and a second portion formed on the first portion, the first portion having improved adhesion to copper relative to the second portion and both portions are formed having resistance to copper diffusion. The invention also includes several embodiments for constructing such structures. Adhesion of the dielectric barrier stack to copper can be increased by plasma treating or ion implanting selected portions of the dielectric barrier stack with adhesion enhancing materials to increase the concentration of such materials in the stack.
摘要翻译：本发明的实施例包括具有增加的电迁移寿命的铜互连结构。这种结构可以包括其上形成有铜层的半导体衬底。在铜层上形成介电阻挡层叠体。电介质势垒叠层包括邻近铜层形成的第一部分和形成在第一部分上的第二部分，第一部分具有相对于第二部分具有改善的对铜的粘合性，并且两个部分形成为具有耐铜扩散性。本发明还包括用于构造这种结构的几个实施例。可以通过等离子体处理或离子注入电介质阻挡层的选定部分与粘合增强材料来增加电介质阻挡层与铜的附着，以增加堆叠中这种材料的浓度。

33. 发明授权

US07276441B1 Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structures 有权
标题翻译：用于增加铜互连结构中的电迁移寿命的介电阻挡层
公开(公告)号：US07276441B1
公开(公告)日：2007-10-02
申请号：US10414601
申请日：2003-04-15
申请人： Hao Cui , Peter A. Burke , Wilbur G. Catabay
发明人： Hao Cui , Peter A. Burke , Wilbur G. Catabay
IPC分类号： H01L21/44 , H01L29/40 , H01L23/532
CPC分类号： H01L21/76832 , H01L21/76825 , H01L21/76826 , H01L21/76834 , H01L21/76883
摘要： Embodiments of the invention include a copper interconnect structure having increased electromigration lifetime. Such structures can include a semiconductor substrate having a copper layer formed thereon. A dielectric barrier stack is formed on the copper layer. The dielectric barrier stack includes a first portion formed adjacent to the copper layer and a second portion formed on the first portion, the first portion having improved adhesion to copper relative to the second portion and both portions are formed having resistance to copper diffusion. The invention also includes several embodiments for constructing such structures. Adhesion of the dielectric barrier stack to copper can be increased by plasma treating or ion implanting selected portions of the dielectric barrier stack with adhesion enhancing materials to increase the concentration of such materials in the stack.
摘要翻译：本发明的实施例包括具有增加的电迁移寿命的铜互连结构。这种结构可以包括其上形成有铜层的半导体衬底。在铜层上形成介电阻挡层叠体。电介质势垒叠层包括邻近铜层形成的第一部分和形成在第一部分上的第二部分，第一部分具有相对于第二部分具有改善的对铜的粘合性，并且两个部分形成为具有耐铜扩散性。本发明还包括用于构造这种结构的几个实施例。可以通过等离子体处理或离子注入电介质阻挡层的选定部分与粘合增强材料来增加电介质阻挡层与铜的附着，以增加堆叠中这种材料的浓度。

34. 发明授权

US06905909B2 Ultra low dielectric constant thin film 失效
标题翻译：超低介电常数薄膜
公开(公告)号：US06905909B2
公开(公告)日：2005-06-14
申请号：US10691400
申请日：2003-10-22
申请人： Hao Cui , Peter A. Burke , Wilbur G. Catabay
发明人： Hao Cui , Peter A. Burke , Wilbur G. Catabay
IPC分类号： C23C16/32 , H01L21/00 , H01L21/314 , H01L21/46 , H01L21/768 , H01L29/15
CPC分类号： H01L21/02167 , C23C16/325 , H01L21/022 , H01L21/02274 , H01L21/3148 , H01L21/76801 , H01L21/76807 , H01L21/76826 , H01L21/76828
摘要： A method for forming a substantially oxygen-free silicon carbide layer on a substrate, where the silicon carbide layer has a dielectric constant of less than about four. The substrate is held at a deposition temperature of between about zero centigrade and about one hundred centigrade, and a gas flow of tetramethylsilane is introduced at a rate of no more than about one thousand scientific cubic centimeters per minute. The deposition pressure is held between about one milli Torr and about one hundred Torr, and a radio frequency plasma discharge is produced with a power of no more than about two kilowatts. The plasma discharge is halted when a desired thickness of the silicon carbide layer has been formed.
摘要翻译：在基底上形成基本上无氧的碳化硅层的方法，其中碳化硅层的介电常数小于约4。基板保持在约零摄氏度和约百摄氏度之间的沉积温度，并且以不超过约一千科学立方厘米每分钟的速率引入四甲基硅烷的气流。沉积压力保持在约1毫乇至约100乇之间，并且以不大于约2千瓦的功率产生射频等离子体放电。当形成所需的碳化硅层厚度时，等离子体放电停止。

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