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31. 发明申请

US20210398812A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20210398812A1
公开(公告)日：2021-12-23
申请号：US17463164
申请日：2021-08-31
申请人： FUJI ELECTRIC CO., LTD.
发明人： Naoko KODAMA , Motoyoshi KUBOUCHI
IPC分类号： H01L21/266 , H01L29/66 , H01L21/263 , H01L21/265 , H01L29/739
摘要： A method of manufacturing a semiconductor device, including preparing a semiconductor substrate having a main surface, forming a device element structure on the main surface, forming a protective film on the main surface of the semiconductor substrate to protect the device element structure, the protective film having an opening therein, forming at least one material film in a predetermined pattern on the main surface of the semiconductor substrate and in the opening of the protective film, the at least one material film being separate from the protective film by a distance of less than 1 mm, forming a resist film on the main surface of the semiconductor substrate, covering the protective film and the at least one material film, the resist film having an opening therein corresponding to an inducing region for impurity defects, and inducing the impurity defects in the semiconductor substrate, using the resist film as a mask.

32. 发明申请

US20210351284A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20210351284A1
公开(公告)日：2021-11-11
申请号：US17356589
申请日：2021-06-24
申请人： FUJI ELECTRIC CO., LTD.
发明人： Motoyoshi KUBOUCHI
IPC分类号： H01L29/739 , H01L29/861 , H01L29/10
摘要： A semiconductor device includes: an inner region including a base region of a second conductivity type provided between an upper surface of the semiconductor substrate and the drift region; and well regions having a higher doping concentration than that of the base region, provided from the upper surface of the semiconductor substrate to a depth position greater than a lower end of the base region, and arranged with the inner region interposed therebetween at the upper surface of the semiconductor substrate. The inner region includes a longitudinal side in a predetermined longitudinal direction at the upper surface of the semiconductor substrate and a plurality of trench portions which extend from the upper surface of the semiconductor substrate to the drift region. At least one of the trench portions is separated into two or more partial trenches in the longitudinal direction, in a region which does not overlap the well regions.

33. 发明申请

US20190206860A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190206860A1
公开(公告)日：2019-07-04
申请号：US16224796
申请日：2018-12-19
申请人： FUJI ELECTRIC CO., LTD.
发明人： Kazuki KAMIMURA , Motoyoshi KUBOUCHI
IPC分类号： H01L27/06 , H01L21/8249
CPC分类号： H01L27/0635 , H01L21/2253 , H01L21/26513 , H01L21/266 , H01L21/8249 , H01L29/7397 , H01L29/8611
摘要： A semiconductor device including a diode region provided in a semiconductor substrate is provided, the diode region including a base region of a first conductivity type exposed on an upper surface of the semiconductor substrate, a cathode region of a second conductivity type exposed on a lower surface of the semiconductor substrate, an inter-cathode region of a first conductivity type exposed on the lower surface of the semiconductor substrate and alternately arranged with the cathode region in a predetermined direction, and a floating region of a second conductivity type provided above the cathode region and above the inter-cathode region.

34. 发明申请

US20170331394A1 BOOST CHOPPER CIRCUIT 有权
公开(公告)号：US20170331394A1
公开(公告)日：2017-11-16
申请号：US15468317
申请日：2017-03-24
申请人： FUJI ELECTRIC CO., LTD.
发明人： Motoyoshi KUBOUCHI , Hao HOU
IPC分类号： H02M7/537 , H02P27/06 , H02M1/32
CPC分类号： H02M7/537 , H02M1/32 , H02M3/156 , H02M3/158 , H02P27/06 , H02P2201/09
摘要： In a boost chopper circuit, a backflow prevention diode circuit has a withstand voltage equal to or more than a withstand voltage of a capacitor circuit connected in series to the backflow prevention diode circuit between opposite ends of a switching device circuit.

35. 发明申请

US20170331367A1 BOOST CHOPPER CIRCUIT 审中-公开
公开(公告)号：US20170331367A1
公开(公告)日：2017-11-16
申请号：US15468369
申请日：2017-03-24
申请人： FUJI ELECTRIC CO., LTD.
发明人： Motoyoshi KUBOUCHI , Hao HOU
IPC分类号： H02M3/07
CPC分类号： H02M3/07 , H02M3/158
摘要： In a boost chopper circuit, a withstand voltage of at least one device of a switching device circuit is lower than a withstand voltage of a capacitor circuit connected in series to a backflow prevention diode circuit between opposite ends of the switching device circuit.

36. 发明申请

US20170264197A1 BOOST CHOPPER CIRCUIT 审中-公开
公开(公告)号：US20170264197A1
公开(公告)日：2017-09-14
申请号：US15414912
申请日：2017-01-25
申请人： FUJI ELECTRIC CO., LTD.
发明人： Motoyoshi KUBOUCHI , Hao HOU
IPC分类号： H02M3/158 , H02M7/00 , H02M7/537
CPC分类号： H02M3/158 , H01L25/00 , H02M7/003 , H02M7/537 , H02M2001/007
摘要： In a boost chopper circuit, a distance between a plurality of first mounting portions of a first semiconductor package that houses a switching device circuit and a distance between a plurality of second mounting portions of a second semiconductor package that houses a backflow prevention diode circuit are different from each other.

37. 发明申请

US20170170097A1 POWER UNIT COOLING MECHANISM 审中-公开
公开(公告)号：US20170170097A1
公开(公告)日：2017-06-15
申请号：US15340898
申请日：2016-11-01
申请人： FUJI ELECTRIC CO., LTD.
发明人： Ryohei MAKINO , Motoyoshi KUBOUCHI
IPC分类号： H01L23/467 , H01L23/367
CPC分类号： H01L23/467 , H01L23/3672 , H01L25/115 , H01L29/1608 , H01L29/2003 , H01L2924/10272 , H01L2924/1033
摘要： A power unit cooling body includes a base part on which a first power semiconductor module and a second power semiconductor module are mounted. A cooling body is mounted on a side of the base part opposite the first power semiconductor module and the second power semiconductor module. A height of a fin of the cooling body is configured to be made shorter on the windward side than on the leeward side.

38. 发明申请

US20170054288A1 DC-DC CONVERTER 审中-公开
标题翻译： DC-DC转换器
公开(公告)号：US20170054288A1
公开(公告)日：2017-02-23
申请号：US15207768
申请日：2016-07-12
申请人： Fuji Electric Co., Ltd.
发明人： Masatoshi TSUYUKI , Ryohei MAKINO , Motoyoshi KUBOUCHI
IPC分类号： H02H7/12 , H02M3/07 , H02M3/155 , H02M1/32
CPC分类号： H02H7/1213 , H02M1/32 , H02M3/158 , H02M2001/009 , H02M2001/325
摘要： The DC-DC converter includes a series circuit of switching elements; a series circuit of capacitors; diodes respectively connected between one end of each of the series circuits; a series circuit constituted by a DC power source, a circuit breaker, and reactors; and a control circuit. The control circuit steps up a voltage of the DC power source through a chopper operation and causes the stepped up voltage to be outputted from both ends of the capacitor series circuit. When determining that a short circuit has occurred in one of the switching elements, the control circuit turns the other switching element that is free from the short circuit ON before the circuit breaker opens, thereby overriding and terminating the chopper operation and suppressing overvoltage caused by the short circuit.
摘要翻译： DC-DC转换器包括开关元件的串联电路; 电容器串联电路; 分别连接在每个串联电路的一端之间的二极管; 由直流电源，断路器和电抗器构成的串联电路; 和控制电路。控制电路通过斩波器操作来升高直流电源的电压，并且从电容器串联电路的两端输出升压电压。在确定在其中一个开关元件中发生短路的情况下，控制电路在断路器断开之前将另一个开关元件断开，从而超过并终止斩波器操作并抑制由于断路器引起的过电压短路。

39. 发明公开

US20240243191A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240243191A1
公开(公告)日：2024-07-18
申请号：US18404920
申请日：2024-01-05
申请人： FUJI ELECTRIC CO., LTD.
发明人： Motoyoshi KUBOUCHI , Soichi YOSHIDA
IPC分类号： H01L29/739 , H01L29/06
CPC分类号： H01L29/7397 , H01L29/0696
摘要： Provided is a semiconductor device which has a first lifetime adjustment region which is provided at a first depth on an upper surface side of a semiconductor substrate and has a density of lattice defects that is a first defect density, and in which the first lifetime adjustment region includes a region which is arranged below a contact region, which is closest to a diode portion in a first direction, among contact regions, and a first length in the first direction by which the first lifetime adjustment region in the diode portion is provided is 0, or is smaller than a second length in the first direction by which the first lifetime adjustment region is not provided in the diode portion.

40. 发明公开

US20240194777A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240194777A1
公开(公告)日：2024-06-13
申请号：US18582651
申请日：2024-02-21
申请人： FUJI ELECTRIC CO., LTD.
发明人： Atsushi SHOJI , Motoyoshi KUBOUCHI
IPC分类号： H01L29/78 , H01L29/06
CPC分类号： H01L29/7804 , H01L29/0615 , H01L29/7813
摘要： Provided is a semiconductor device including: a semiconductor substrate having a base region of a second conductivity type provided between a drift region and an upper surface of the semiconductor substrate; a first lifetime region arranged in the drift region on a lower surface side of the semiconductor substrate relative to the base region; and a second lifetime region which is arranged to be sandwiched between first lifetime regions including the first lifetime region in a first direction parallel to the upper surface of the semiconductor substrate and in which a carrier lifetime is longer than in the first lifetime region, where a width of the second lifetime region in the first direction is 0.2 times or more a thickness of the first lifetime region in a second direction perpendicular to the upper surface of the semiconductor substrate.

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