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31. 发明授权

US07663125B2 Ion beam current uniformity monitor, ion implanter and related method 有权
标题翻译：离子束电流均匀性监测仪，离子注入机及相关方法
公开(公告)号：US07663125B2
公开(公告)日：2010-02-16
申请号：US11692951
申请日：2007-03-29
申请人： William G. Callahan , Morgan D. Evans , George M. Gammel , Norman E. Hussey , Gregg A. Norris , Joseph C. Olson
发明人： William G. Callahan , Morgan D. Evans , George M. Gammel , Norman E. Hussey , Gregg A. Norris , Joseph C. Olson
IPC分类号： H01J37/08 , G21K5/10
CPC分类号： H01J37/3171 , H01J2237/24405 , H01J2237/31703
摘要： An ion beam current uniformity monitor, ion implanter and related method are disclosed. In one embodiment, the ion beam current uniformity monitor includes an ion beam current measurer including a plurality of measuring devices for measuring a current of an ion beam at a plurality of locations; and a controller for maintaining ion beam current uniformity based on the ion beam current measurements by the ion beam current measurer.
摘要翻译：公开了一种离子束电流均匀性监测器，离子注入机及相关方法。在一个实施例中，离子束电流均匀性监测器包括离子束电流测量器，其包括用于测量多个位置处的离子束电流的多个测量装置; 以及基于离子束电流测量器的离子束电流测量来维持离子束电流均匀性的控制器。

32. 发明申请

US20090166555A1 RF electron source for ionizing gas clusters 审中-公开
标题翻译：用于电离气体簇的RF电子源
公开(公告)号：US20090166555A1
公开(公告)日：2009-07-02
申请号：US12005757
申请日：2007-12-28
申请人： Joseph C. Olson , Jay T. Scheuer
发明人： Joseph C. Olson , Jay T. Scheuer
IPC分类号： H01J27/00
CPC分类号： H01J27/18 , H01J27/026 , H01J37/08 , H01J37/30 , H01J37/31 , H01J2237/061 , H01J2237/06366 , H01J2237/0812 , H01J2237/31701
摘要： The present invention discloses a system and method for generating gas cluster ion beams (GCIB) having very low metallic contaminants. Gas cluster ion beam systems are plagued by high metallic contamination, thereby affecting their utility in many applications. This contamination is caused by the use of thermionic sources, which impart contaminants and are also susceptible to short lifecycles due to their elevated operating temperatures. While earlier modifications have focused on isolating the filament from the source gas cluster as much as possible, the present invention represents a significant advancement by eliminating the thermionic source completely. In the preferred embodiment, an inductively coupled plasma and ionization region replaces the thermionic source and ionizer of the prior art. Through the use of RF or microwave frequency electromagnetic waves, plasma can be created in the absence of a filament, thereby eliminating a major contributor of metallic contaminants.
摘要翻译：本发明公开了一种具有非常低金属污染物的气体簇离子束（GCIB）的系统和方法。气体簇离子束系统受到高金属污染的困扰，从而影响其在许多应用中的应用。这种污染是由使用热离子源引起的，因为它们赋予污染物，并且由于它们升高的工作温度也容易产生短暂的生命周期。虽然较早的修改集中在尽可能多地将源极气体簇隔离，但本发明通过完全消除热离子源代表了显着的进步。在优选实施例中，电感耦合等离子体和电离区取代现有技术的热离子源和离子发生器。通过使用RF或微波频率电磁波，可以在没有灯丝的情况下产生等离子体，从而消除金属污染物的主要贡献者。

33. 发明申请

US20080169427A1 TECHNIQUES FOR PROVIDING ION SOURCE FEED MATERIALS 有权
标题翻译：提供离子源材料的技术
公开(公告)号：US20080169427A1
公开(公告)日：2008-07-17
申请号：US11776217
申请日：2007-07-11
申请人： Christopher R. HATEM , Craig R. Chaney , Eric R. Cobb , Joseph C. Olson , Chris Campbell
发明人： Christopher R. HATEM , Craig R. Chaney , Eric R. Cobb , Joseph C. Olson , Chris Campbell
IPC分类号： B01J37/30
CPC分类号： H01J27/02 , C23C14/246 , C23C14/48 , H01J37/08 , H01J37/3171 , H01J2237/006
摘要： Techniques for providing ion source feed materials are disclosed. In one particular exemplary embodiment, the techniques may be realized as a container for supplying an ion source feed material. The container may comprise an internal cavity to be pre-filled with an ion source feed material. The container may also comprise an outer body configured to be removably loaded into a corresponding housing that is coupled to an ion source chamber via a nozzle assembly. The container may further comprise an outlet to seal in the pre-filled ion source feed material, the outlet being further configured to engage with the nozzle assembly to establish a flow path between the internal cavity and the ion source chamber. The container may be configured to be a disposable component.
摘要翻译：公开了提供离子源进料的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于提供离子源进料的容器。容器可以包括预先填充有离子源进料的内部空腔。容器还可以包括被配置为可移除地装载到经由喷嘴组件耦合到离子源室的相应壳体中的外主体。容器还可包括密封在预填充的离子源进料中的出口，该出口进一步构造成与喷嘴组件接合以在内腔和离子源室之间建立流路。容器可以被配置为一次性部件。

34. 发明授权

US07397047B2 Technique for tuning an ion implanter system 有权
标题翻译：调整离子注入机系统的技术
公开(公告)号：US07397047B2
公开(公告)日：2008-07-08
申请号：US11123082
申请日：2005-05-06
申请人： Shengwu Chang , Joseph C. Olson , Damian Brennan
发明人： Shengwu Chang , Joseph C. Olson , Damian Brennan
IPC分类号： H01J37/302
CPC分类号： H01J37/3171 , H01J37/3023 , H01J2237/30411 , H01J2237/31703
摘要： A technique for tuning an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for tuning an ion implanter system having multiple beam-line elements. The method may comprise establishing one or more relationships among the multiple beam-line elements. The method may also comprise adjusting the multiple beam-line elements in a coordinated manner, based at least in part on the one or more established relationships, to produce a desired beam output.
摘要翻译：公开了一种用于调整离子注入机系统的技术。在一个特定的示例性实施例中，该技术可以被实现为用于调整具有多个光束线元件的离子注入系统的方法。该方法可以包括在多个波束线元件之间建立一个或多个关系。该方法还可以包括至少部分地基于一个或多个已建立的关系以协调的方式调整多个光束线元件以产生期望的光束输出。

35. 发明授权

US07358510B2 Ion implanter with variable scan frequency 有权
标题翻译：离子注入机具有可变扫描频率
公开(公告)号：US07358510B2
公开(公告)日：2008-04-15
申请号：US11390518
申请日：2006-03-27
申请人： Joseph C. Olson , Morgan Evans
发明人： Joseph C. Olson , Morgan Evans
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J37/026 , H01J37/1477 , H01J37/302 , H01J2237/0041 , H01J2237/30488 , H01L21/265
摘要： An ion implanter includes an ion beam generator configured to generate an ion beam, a scanner configured to scan the ion beam in at least one direction at a scan frequency, and a controller. The controller is configured to control the scan frequency in response to an operating parameter of the ion implanter. The operating parameter is at least partially dependent on the energy of the ion beam. The scan frequency is greater than a scan frequency threshold if the energy is greater than an energy threshold, and the scan frequency is less than the scan frequency threshold if the energy is less than the energy threshold.
摘要翻译：离子注入机包括被配置为产生离子束的离子束发生器，配置成以扫描频率沿至少一个方向扫描离子束的扫描器和控制器。控制器被配置为响应于离子注入机的操作参数来控制扫描频率。操作参数至少部分取决于离子束的能量。如果能量大于能量阈值，则扫描频率大于扫描频率阈值，如果能量小于能量阈值，则扫描频率小于扫描频率阈值。

36. 发明授权

US07348576B2 Technique for ion beam angle process control 有权
标题翻译：离子束角过程控制技术
公开(公告)号：US07348576B2
公开(公告)日：2008-03-25
申请号：US11146064
申请日：2005-06-07
申请人： Atul Gupta , Joseph C. Olson
发明人： Atul Gupta , Joseph C. Olson
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01L21/26586 , H01J37/304 , H01J37/3171 , H01J2237/24528 , H01J2237/30455 , H01J2237/30472 , H01J2237/31703 , H01L29/66803 , H01L29/785
摘要： A technique for ion beam angle process control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle process control in an ion implanter system. The method may comprise directing one or more ion beams at a substrate surface. The method may also comprise determining an average spread of incident angles at which the one or more ion beams strike the substrate surface. The method may further comprise adjusting the one or more ion beams based at least in part on the average spread of incident angles to produce a desired spread of ion beam incident angles.
摘要翻译：公开了一种用于离子束角过程控制的技术。在一个特定的示例性实施例中，该技术可以被实现为离子注入机系统中的离子束角度过程控制的方法。该方法可以包括在衬底表面处引导一个或多个离子束。该方法还可以包括确定一个或多个离子束撞击衬底表面的入射角的平均扩展。该方法还可以包括至少部分地基于入射角的平均扩展来调整一个或多个离子束，以产生期望的离子束入射角的扩展。

37. 发明授权

US07166854B2 Uniformity control multiple tilt axes, rotating wafer and variable scan velocity 有权
标题翻译：均匀性控制多个倾斜轴，旋转晶片和可变扫描速度
公开(公告)号：US07166854B2
公开(公告)日：2007-01-23
申请号：US11021420
申请日：2004-12-23
申请人： Anthony Renau , Joseph C. Olson , Donna L. Smatlak , Jun Lu
发明人： Anthony Renau , Joseph C. Olson , Donna L. Smatlak , Jun Lu
IPC分类号： H01J37/08
CPC分类号： H01J37/3023 , H01J37/304 , H01J37/3171 , H01J2237/20214 , H01J2237/31703 , H01L21/265
摘要： A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially untuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. Also included is a method, system and program product for conducting a uniform dose ion implantation in which the target is rotated and tilted about greater than one axes relative to the ion beam.
摘要翻译：公开了一种用于在离子注入期间增强剂量均匀性的系统，方法和程序产品。本发明旨在允许使用至少部分未经调制的离子束以可变或不均匀的扫描速度扫描靶的多个旋转固定取向（扫描方向）来获得均匀的注入。不均匀的扫描速度由基于离子束分布和/或扫描方向产生的扫描速度分布决定。光束可以是任何尺寸，形状或调谐。在扫描之后，保持晶片的压板旋转到新的期望的旋转固定取向，并且随后的扫描以相同的扫描速度分布或不同的扫描速度分布发生。还包括用于进行均匀剂量离子注入的方法，系统和程序产品，其中靶相对于离子束旋转并且倾斜大于大于一个轴。

38. 发明授权

US07045799B1 Weakening focusing effect of acceleration-deceleration column of ion implanter 有权
标题翻译：离子注入机加速减速柱弱化聚焦效应
公开(公告)号：US07045799B1
公开(公告)日：2006-05-16
申请号：US10993346
申请日：2004-11-19
申请人： Shengwu Chang , Joseph C. Olson , Donald Anderson , Daniel McGillicuddy
发明人： Shengwu Chang , Joseph C. Olson , Donald Anderson , Daniel McGillicuddy
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/047 , H01J2237/12
摘要： A method and apparatus for weakening a strong focus effect of an acceleration-deceleration column of an ion implanter during a deceleration mode are disclosed. The apparatus includes a tube lens surrounding the ion beam adjacent to a deceleration lens of the acceleration-deceleration column. The tube lens causes a defocusing of the ion beam at the entrance of the tube lens, which reduces the ion dispersion problem generated by the column. The invention also includes an accel-decel column and ion implanter incorporating the tube lens. An additional deceleration-suppression electrode may also be added subsequent to the tube lens for confining electrons within the tube lens.
摘要翻译：公开了一种用于在减速模式期间减弱离子注入机的加速 - 减速列的强焦点效应的方法和装置。该装置包括围绕加速减速柱的减速透镜的离子束的管透镜。管透镜引起离子束在管透镜入口处的散焦，这降低了柱产生的离子色散问题。本发明还包括加速减速柱和并入管透镜的离子注入机。还可以在管透镜之后添加附加减速抑制电极，以将电子限制在管透镜内。

39. 发明授权

US06710359B2 Methods and apparatus for scanned beam uniformity adjustment in ion implanters 有权
标题翻译：离子注入机扫描光束均匀性调整的方法和装置
公开(公告)号：US06710359B2
公开(公告)日：2004-03-23
申请号：US09815484
申请日：2001-03-23
申请人： Joseph C. Olson , Rosario Mollica
发明人： Joseph C. Olson , Rosario Mollica
IPC分类号： H01J3700
CPC分类号： G21K1/08 , H01J37/304 , H01J2237/3045 , H01J2237/31701
摘要： Methods and apparatus are provided for adjusting the profile of a scanned ion beam. The spatial distribution of the unscanned ion beam is measured. The ion beam is scanned at an initial scan speed, and the beam profile of the scanned ion beam is measured. If the measured beam profile is not within specification, a scan speed correction that produces a desired profile correction is determined using a calculation which is based on the spatial distribution of the unscanned ion beam. The scan speed correction may be determined by convolving a candidate scan speed correction with the spatial distribution of the unscanned ion beam to produce a result and determining if the result is sufficiently close to the desired profile correction. A multi-dimensional search algorithm may be used to select the candidate scan speed correction. The ion beam is scanned at a corrected scan speed, which is based on the initial scan speed and the scan speed correction, to produce corrected beam profile.
摘要翻译：提供了用于调整扫描离子束的轮廓的方法和装置。测量未扫描离子束的空间分布。以初始扫描速度扫描离子束，并测量扫描离子束的光束分布。如果测量的光束轮廓不在规定范围内，则使用基于未扫描的离子束的空间分布的计算来确定产生期望的轮廓校正的扫描速度校正。可以通过将候选扫描速度校正与未扫描离子束的空间分布进行卷积以产生结果并确定结果是否足够接近所需轮廓校正来确定扫描速度校正。可以使用多维搜索算法来选择候选扫描速度校正。以基于初始扫描速度和扫描速度校正的校正扫描速度扫描离子束，以产生校正的波束分布。

40. 发明授权

US08716682B2 Apparatus and method for multiple slot ion implantation 有权
标题翻译：多槽离子注入的装置和方法
公开(公告)号：US08716682B2
公开(公告)日：2014-05-06
申请号：US13079369
申请日：2011-04-04
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
IPC分类号： H05H1/24
CPC分类号： H01J37/3023 , H01J27/024 , H01J37/08 , H01J37/3172 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J37/32752 , H01J2237/31711
摘要： An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.
摘要翻译：离子注入系统可以包括用于提供等离子体的等离子体源和被布置成接收相对于等离子体的偏置的工件夹持器，以将等离子体护套上的离子吸引到衬底。该系统还可以包括提取板装置，其包括多个不同的孔，每个孔被布置成提供具有分布在工件上的入射角范围上的离子的离子束，其中从第一孔提取的第一离子束具有第一束轮廓与从第二孔提取的第二离子束不同。

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