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31. 发明授权

US07638375B2 Method of manufacturing thin film transistor substrate 失效
标题翻译：制造薄膜晶体管基板的方法
公开(公告)号：US07638375B2
公开(公告)日：2009-12-29
申请号：US12009253
申请日：2008-01-16
申请人： Hong-Kee Chin , Yu-Gwang Jeong , Sang-Gab Kim , Joo-Han Kim , Joo-Ae Youn , Min-Seok Oh , Jong-Hyun Choung , Seung-Ha Choi
发明人： Hong-Kee Chin , Yu-Gwang Jeong , Sang-Gab Kim , Joo-Han Kim , Joo-Ae Youn , Min-Seok Oh , Jong-Hyun Choung , Seung-Ha Choi
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A method of manufacturing a TFT substrate includes: sequentially forming a transparent conductive layer and an opaque conductive layer on a substrate, patterning the transparent conductive layer and the opaque conductive layer by using a first mask to form a gate pattern including a pixel electrode, and forming a gate insulating layer and a semiconductor layer above the substrate. A contact hole is formed which exposes a portion of the pixel electrode and a semiconductor pattern using a second mask. A conductive layer is formed above the substrate and patterned to form a source/drain pattern including a drain electrode which overlaps a portion of the pixel electrode. Portions of the gate insulating layer and the opaque conductive layer above the pixel electrode are removed except a portion overlapping the drain electrode, by using a third mask.
摘要翻译：一种制造TFT基板的方法包括：在基板上依次形成透明导电层和不透明导电层，通过使用第一掩模对透明导电层和不透明导电层进行构图，形成包括像素电极的栅极图案，以及在基板上形成栅极绝缘层和半导体层。使用第二掩模形成露出一部分像素电极和半导体图案的接触孔。在衬底上形成导电层，并被图案化以形成包括与像素电极的一部分重叠的漏电极的源极/漏极图案。除了与漏电极重叠的部分之外，通过使用第三掩模除去栅极绝缘层和像素电极上方的不透明导电层的部分。

32. 发明申请

US20080087633A1 METHOD FOR FORMING A METAL LINE AND METHOD FOR MANUFACTURING DISPLAY SUBSTRATE HAVING THE METAL LINE 审中-公开
标题翻译：用于形成金属线的方法和用于制造具有金属线的显示衬底的方法
公开(公告)号：US20080087633A1
公开(公告)日：2008-04-17
申请号：US11870806
申请日：2007-10-11
申请人： Min-Seok OH , Sang-Gab Kim , Yu-Gwang Jeong , Seung-Ha Choi , Hong-Kee Chin , Shin-II Choi
发明人： Min-Seok OH , Sang-Gab Kim , Yu-Gwang Jeong , Seung-Ha Choi , Hong-Kee Chin , Shin-II Choi
IPC分类号： C23F1/12
CPC分类号： C23F1/12 , G02F2001/13629 , G02F2001/136295 , H01L21/32136 , H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/4908
摘要： A method for forming a metal line includes sequentially depositing a low-resistivity metal layer having aluminum on a base substrate and an upper layer having molybdenum on the low-resistivity metal layer, forming a photoresist pattern having a linear shape on the upper layer, etching the upper layer via a mixed gas using the photoresist pattern as a mask, the mixed gas including a chlorine based gas mixed with an additional gas having at least one of nitrogen gas, argon gas, helium gas and sulfur hexafluoride gas, and etching the low-resistivity metal layer using the photoresist pattern as the mask thereby removing any stringer that may be caused by a residue of the low-resistivity metal layer.
摘要翻译：一种形成金属线的方法包括在低电阻率金属层上顺次沉积具有铝的低电阻率金属层，在低电阻金属层上形成具有线性形状的光致抗蚀剂图案，蚀刻通过使用光致抗蚀剂图案作为掩模的混合气体的上层，所述混合气体包括与具有氮气，氩气，氦气和六氟化硫气体中的至少一种的附加气体混合的氯基气体，并且蚀刻低使用光致抗蚀剂图案作为掩模，从而去除可能由低电阻率金属层的残留物引起的任何桁条。

33. 发明申请

US20070178413A1 Thin film transistor array panel and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20070178413A1
公开(公告)日：2007-08-02
申请号：US11544987
申请日：2006-10-06
申请人： Seung-Ha Choi , Min-Seok Oh , Hong-Kee Chin , Sang-Gab Kim , Yu-Gwang Jeong
发明人： Seung-Ha Choi , Min-Seok Oh , Hong-Kee Chin , Sang-Gab Kim , Yu-Gwang Jeong
IPC分类号： G03F7/26
CPC分类号： H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/4908
摘要： A thin film transistor (TFT) array panel and method of manufacturing the same are provided. The method includes forming a semiconductor layer and an ohmic contact layer over a gate line, forming a conductive layer on the ohmic contact layer, forming a first photosensitive layer pattern on the conductive layer, etching the conductive layer using the first photosensitive layer pattern as an etching mask, etching the ohmic contact layer and the semiconductor layer by a fluorine-containing gas, a chloride-containing gas, and an oxygen (O2) gas using the first photosensitive layer pattern as an etching mask, removing the first photosensitive layer pattern to a predetermined thickness to form a second photosensitive layer pattern, and etching the conductive layer using the second photosensitive layer pattern as an etching mask to expose a part of the ohmic contact layer.
摘要翻译：提供薄膜晶体管（TFT）阵列面板及其制造方法。该方法包括在栅极线上形成半导体层和欧姆接触层，在欧姆接触层上形成导电层，在导电层上形成第一感光层图案，使用第一感光层图案蚀刻导电层，作为蚀刻掩模，使用第一感光层图案作为蚀刻掩模，通过含氟气体，含氯气体和氧（O 2/2）气体蚀刻欧姆接触层和半导体层将第一感光层图案移除到预定厚度以形成第二感光层图案，并且使用第二感光层图案蚀刻导电层作为蚀刻掩模以暴露欧姆接触层的一部分。

34. 发明申请

US20070080350A1 Panel for flexible display device and manufacturing method thereof 审中-公开
标题翻译：柔性显示装置用面板及其制造方法
公开(公告)号：US20070080350A1
公开(公告)日：2007-04-12
申请号：US11545364
申请日：2006-10-10
申请人： Hong-Kee Chin , Sang-Gab Kim , Tae-Hyung Hwang , Min-Seok Oh , Yu-Gwang Jeong , Seung-Ha Choi
发明人： Hong-Kee Chin , Sang-Gab Kim , Tae-Hyung Hwang , Min-Seok Oh , Yu-Gwang Jeong , Seung-Ha Choi
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1218 , H01L27/127 , H01L27/1288 , H01L29/06 , H01L29/66765 , H01L29/78603
摘要： A flexible display panel according to an embodiment of the present invention includes a flexible substrate, a gate line formed on the substrate and including a gate electrode, a gate insulating layer formed on the substrate, a semiconductor layer formed on the gate insulating layer and disposed substantially on the entire gate electrode, a source electrode and a drain electrode formed on the semiconductor layer, and a pixel electrode connected to the drain electrode. The patterning of the semiconductor layer to form a second semiconductor member may include coating a photoresist film on a first semiconductor member, exposing the photoresist film to light from a back of the substrate, wherein the gate electrode is used as a light blocking mask, developing the exposed photoresist film to form a photoresist pattern having the same planar size as the gate electrode, and etching the semiconductor layer using the photoresist pattern as an etching mask.
摘要翻译：根据本发明的实施例的柔性显示面板包括柔性基板，形成在基板上并包括栅电极的栅极线，形成在基板上的栅极绝缘层，形成在栅极绝缘层上的半导体层，基本上在整个栅电极上，形成在半导体层上的源电极和漏电极以及连接到漏电极的像素电极。半导体层的图形化以形成第二半导体部件可以包括在第一半导体部件上涂覆光致抗蚀剂膜，将光致抗蚀剂膜暴露于来自基板的背面的光，其中栅电极用作遮光掩模，显影暴露的光致抗蚀剂膜以形成具有与栅电极相同的平面尺寸的光致抗蚀剂图案，并且使用光致抗蚀剂图案作为蚀刻掩模蚀刻半导体层。

35. 发明申请

US20090191655A1 METHOD OF ETCHING AMORPHOUS SILICON LAYER AND METHOD OF MANUFACTURING LIQUID CRYSTAL DISPLAY USING THE SAME 审中-公开
标题翻译：蚀刻非晶硅层的方法和使用其制造液晶显示的方法
公开(公告)号：US20090191655A1
公开(公告)日：2009-07-30
申请号：US12200430
申请日：2008-08-28
申请人： Shin-Il Choi , Sang-Gab Kim , Seung-Ha Choi , Gon-Ho Kim , Min-Seik Oh , Hong-Kee Chin , Yu-Gwang Jeong
发明人： Shin-Il Choi , Sang-Gab Kim , Seung-Ha Choi , Gon-Ho Kim , Min-Seik Oh , Hong-Kee Chin , Yu-Gwang Jeong
IPC分类号： H01L21/3065 , H01L33/00
CPC分类号： H01L21/32137 , H01J37/32825 , H01L27/1214 , H01L27/1259
摘要： A method of etching an amorphous silicon layer includes providing a substrate with an amorphous silicon layer formed thereon into an atmospheric pressure plasma etching device, providing a plasma generation gas and etching gas to a plasma generator of the atmospheric pressure plasma etching device and generating an atmospheric pressure plasma gas between two electrodes provided in the plasma generator in which the two electrodes face each other. The method further includes repeatedly passing the substrate through the plasma generator at a predetermined speed, thereby etching the amorphous silicon layer on the substrate by using the atmospheric pressure plasma gas generated from the plasma generator.
摘要翻译：蚀刻非晶硅层的方法包括：将形成有非晶硅层的基板提供到大气压等离子体蚀刻装置中，为大气压等离子体蚀刻装置的等离子体发生器提供等离子体产生气体和蚀刻气体，并产生大气在等离子体发生器中设置的两个电极之间的两个电极之间的压力等离子体气体，其中两个电极彼此面对。该方法还包括以预定速度重复地使衬底通过等离子体发生器，从而通过使用从等离子体发生器产生的大气压等离子体气体来蚀刻衬底上的非晶硅层。

36. 发明授权

US08298877B2 Array substrate and method for manufacturing the array substrate 有权
标题翻译：阵列基板和阵列基板的制造方法
公开(公告)号：US08298877B2
公开(公告)日：2012-10-30
申请号：US12777347
申请日：2010-05-11
申请人： Shin-Il Choi , Sang-Gab Kim , Yu-Gwang Jeong , Hong-Kee Chin
发明人： Shin-Il Choi , Sang-Gab Kim , Yu-Gwang Jeong , Hong-Kee Chin
IPC分类号： H01L21/44 , H01L21/84
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1288 , H01L29/42384 , H01L29/78696
摘要： An array substrate including: a gate electrode and a gate insulation layer disposed on a base substrate, the gate insulation layer having a first thickness in a first region and a second thickness in a second region, the first thickness being greater than the second thickness; a semiconductor pattern disposed on the gate insulation layer in the first region, an end portion of the semiconductor pattern having a stepped portion with respect to the gate insulation layer; an ohmic contact pattern disposed on the semiconductor pattern, an end portion of the ohmic contact pattern opposite to a channel portion being aligned with the end portion of the semiconductor pattern; and source and drain electrodes disposed on the ohmic contact pattern, the source and drain electrodes spaced apart from each other and including first and second thin-film transistor patterns.
摘要翻译：一种阵列基板，包括：栅极电极和栅极绝缘层，其设置在基底基板上，所述栅极绝缘层在第一区域具有第一厚度，在第二区域具有第二厚度，所述第一厚度大于所述第二厚度; 所述半导体图案设置在所述第一区域中的所述栅极绝缘层上，所述半导体图案的端部相对于所述栅极绝缘层具有阶梯部分; 设置在所述半导体图案上的欧姆接触图案，所述欧姆接触图案的与沟道部分相对的端部与所述半导体图案的端部对准; 以及设置在欧姆接触图案上的源极和漏极，源极和漏极彼此间隔开并且包括第一和第二薄膜晶体管图案。

37. 发明申请

US20080106685A1 Method of manufacturing liquid crystal display 有权
标题翻译：制造液晶显示器的方法
公开(公告)号：US20080106685A1
公开(公告)日：2008-05-08
申请号：US11897769
申请日：2007-08-31
申请人： Seung-Ha Choi , Min-Seok Oh , Sang-Gab Kim , Jae-Ho Choi , Yu-Gwang Jeong
发明人： Seung-Ha Choi , Min-Seok Oh , Sang-Gab Kim , Jae-Ho Choi , Yu-Gwang Jeong
IPC分类号： G02F1/133
CPC分类号： G02F1/1362 , G02F1/13458 , G02F1/136227 , G02F2001/136231 , G02F2001/136236 , G02F2001/136295 , H01L27/124 , H01L27/1288
摘要： A method for forming a liquid crystal display device includes several regions. After forming a gate line layer, a gate insulator, a semiconductor layer, a data layer and a photoresist layer, a mask is used to define a plurality of regions in the photoresist layer. Certain of the regions have different thickness of the photoresist layer after developing. While exposing the gate pad and data pad, etching process is applied over both the gate pad and data pad at the same time. Then, a passivation layer is deposited over the gate pad and the data pad which are exposed via contact hole. While forming the other contact hole in the coating layer, both the data pad and the gate pad can be exposed to etching process within the same time period.
摘要翻译：一种形成液晶显示装置的方法包括几个区域。在形成栅极线层，栅极绝缘体，半导体层，数据层和光致抗蚀剂层之后，使用掩模来限定光致抗蚀剂层中的多个区域。某些区域在显影后具有不同的光致抗蚀剂层的厚度。在暴露栅极焊盘和数据焊盘的同时，在栅极焊盘和数据焊盘上同时施加蚀刻工艺。然后，钝化层沉积在通过接触孔暴露的栅极焊盘和数据焊盘上。同时在涂层中形成另一个接触孔，数据焊盘和栅极焊盘都可以在同一时间段内暴露于蚀刻过程。

38. 发明授权

US07868958B2 Manufacturing liquid crystal display with incremental removal of an insulating layer 有权
标题翻译：制造液晶显示屏，增加去除绝缘层
公开(公告)号：US07868958B2
公开(公告)日：2011-01-11
申请号：US11897769
申请日：2007-08-31
申请人： Seung-Ha Choi , Min-Seok Oh , Sang-Gab Kim , Jae-Ho Choi , Yu-Gwang Jeong
发明人： Seung-Ha Choi , Min-Seok Oh , Sang-Gab Kim , Jae-Ho Choi , Yu-Gwang Jeong
IPC分类号： G02F1/136
CPC分类号： G02F1/1362 , G02F1/13458 , G02F1/136227 , G02F2001/136231 , G02F2001/136236 , G02F2001/136295 , H01L27/124 , H01L27/1288
摘要： A method for forming a liquid crystal display device includes incremental removal of a gate insulator. After forming a gate line layer, a gate insulator, a semiconductor layer, a data layer and a photoresist layer, a mask is used to define a plurality of regions in the photoresist layer through selective development. The developed portions of the photoresist layer are removed and parts of the underlying layers are etched in a plurality of steps using the photoresist layer as a mask. The gate insulator is partially removed during the etching of the data layer and completely removed during formation of source and drain electrodes.
摘要翻译：一种用于形成液晶显示装置的方法包括增加去除栅极绝缘体。在形成栅极线层，栅极绝缘体，半导体层，数据层和光致抗蚀剂层之后，使用掩模通过选择性显影在光致抗蚀剂层中限定多个区域。去除光致抗蚀剂层的显影部分，并使用光致抗蚀剂层作为掩模以多个步骤蚀刻部分下面的层。栅极绝缘体在蚀刻数据层期间被部分去除，并且在形成源极和漏极期间被完全去除。

39. 发明申请

US20090184319A1 DISPLAY SUBSTRATE AND A METHOD OF MANUFACTURING THE DISPLAY SUBSTRATE 审中-公开
标题翻译：显示基板和制造显示基板的方法
公开(公告)号：US20090184319A1
公开(公告)日：2009-07-23
申请号：US12328487
申请日：2008-12-04
申请人： Sang-Gab Kim , Min-Seok Oh , Yu-Gwang Jeong , Hong-Sick Park , Shi-Yul Kim , Jang-Soo Kim , Shin-Il Choi
发明人： Sang-Gab Kim , Min-Seok Oh , Yu-Gwang Jeong , Hong-Sick Park , Shi-Yul Kim , Jang-Soo Kim , Shin-Il Choi
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： G02F1/136286 , G02F2001/136295 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： A method of manufacturing a display substrate is described. In the method, a gate line and a gate electrode are formed on a base substrate. A source metal layer is formed on the base substrate having the gate line and the gate electrode. A data line, a source electrode and a drain electrode are formed by etching the source metal layer by using an etching gas. An additive gas is provided to the base substrate having the drain electrode so that the additive gas reacts with an etching component of the etching gas to remove a by-product formed at an exposed portion of the data line, the source electrode and drain electrode. Thus, corrosion of the fine pattern due to an etching gas may be prevented and/or reduced.
摘要翻译：对制造显示基板的方法进行说明。在该方法中，在基底基板上形成栅极线和栅电极。在具有栅极线和栅电极的基底基板上形成源极金属层。通过使用蚀刻气体蚀刻源极金属层来形成数据线，源电极和漏电极。向具有漏电极的基底基板提供添加气体，使得添加气体与蚀刻气体的蚀刻部件反应，以除去在数据线，源电极和漏电极的暴露部分形成的副产物。因此，可以防止和/或减少由蚀刻气体引起的精细图案的腐蚀。

40. 发明授权

US09229283B2 Display substrate including organic layer and method of manufacturing the same 有权
标题翻译：显示基板包括有机层及其制造方法
公开(公告)号：US09229283B2
公开(公告)日：2016-01-05
申请号：US13488733
申请日：2012-06-05
申请人： Yun-Jong Yeo , Yu-Gwang Jeong , Hong-Kee Chin , Sang-Gab Kim , Jeong-Min Park , Ji-Young Park
发明人： Yun-Jong Yeo , Yu-Gwang Jeong , Hong-Kee Chin , Sang-Gab Kim , Jeong-Min Park , Ji-Young Park
IPC分类号： H01L27/00 , G02F1/1343 , H01L27/12
CPC分类号： G02F1/134363 , H01L27/124 , H01L27/1244 , H01L27/1248 , H01L27/1288
摘要： A display substrate includes a base substrate, a switching element, a protecting layer, an organic layer, a first pixel electrode and a second pixel electrode. The switching element is on the base substrate, and includes a gate electrode, a source electrode and a drain electrode. The protecting layer is on the switching element, and includes a first hole exposing the drain electrode. The organic layer is on the protecting layer, and includes a second hole which exposes a side surface of the protecting layer which defines the first hole and exposes a top surface of the protecting layer which is adjacent to the side surface of the protecting layer. The first pixel electrode is on the organic layer. The second pixel electrode overlaps the first pixel electrode, and is electrically connected to the drain electrode via the first and second holes.
摘要翻译：显示基板包括基底基板，开关元件，保护层，有机层，第一像素电极和第二像素电极。开关元件在基底基板上，并且包括栅电极，源电极和漏电极。保护层位于开关元件上，并且包括暴露漏电极的第一孔。有机层位于保护层上，并且包括第二孔，其露出限定第一孔的保护层的侧表面，并露出与保护层的侧表面相邻的保护层的顶表面。第一像素电极在有机层上。第二像素电极与第一像素电极重叠，并且经由第一和第二孔电连接到漏电极。

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