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31. 发明申请

US20100054369A1 FILTER TUNING CIRCUIT FOR WIRELESS COMMUNICATION SYSTEM 有权
标题翻译：无线通信系统滤波器调谐电路
公开(公告)号：US20100054369A1
公开(公告)日：2010-03-04
申请号：US12200366
申请日：2008-08-28
申请人： Yeon Kug MOON , Tae Ho Hwang , Dong Sun Kim , Kwang Ho Won , Yong Kuk Park
发明人： Yeon Kug MOON , Tae Ho Hwang , Dong Sun Kim , Kwang Ho Won , Yong Kuk Park
IPC分类号： H04L27/06
CPC分类号： H04L25/0288 , H04L25/0272
摘要： A filter tuning circuit for a wireless communication system is provided. A filter tuning circuit includes a comparator and a counter which control a transconvertance value of a differential transconverter to tune a filter.
摘要翻译：提供一种用于无线通信系统的滤波器调谐电路。滤波器调谐电路包括比较器和计数器，其控制差分转换器的跨转换值来调谐滤波器。

32. 发明申请

US20090166640A1 Copper wire, method for fabricating the same, and thin film transistor substrate with the same 有权
标题翻译：铜线，其制造方法以及具有该铜线的薄膜晶体管基板
公开(公告)号：US20090166640A1
公开(公告)日：2009-07-02
申请号：US12314605
申请日：2008-12-12
申请人： Gyu Won Han , Dong Sun Kim , Won Joon Ho , Hee Jung Yang
发明人： Gyu Won Han , Dong Sun Kim , Won Joon Ho , Hee Jung Yang
IPC分类号： H01L33/00 , B32B5/02 , C23C14/08
CPC分类号： H01L23/53238 , H01L21/32051 , H01L21/76829 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/3011 , Y10T428/2958 , H01L2924/00
摘要： The present invention relates to a copper wire in a semiconductor device in which a barrier layer is formed for improving adhesion of a copper wire without any additional fabricating step; a method for fabricating the same, and a flat panel display device with the same. The copper wire includes a barrier layer formed on an underlying structure, and a copper conductive layer on the barrier layer, wherein the barrier layer includes at least one of a Cu2O layer and a CuOxNy layer.
摘要翻译：本发明涉及一种半导体器件中的铜线，其中形成阻挡层以改善铜线的附着，而无需任何额外的制造步骤; 其制造方法和具有该方法的平板显示装置。铜线包括形成在下面的结构上的阻挡层和阻挡层上的铜导电层，其中阻挡层包括Cu 2 O层和CuO x N y层中的至少一种。

33. 发明授权

US07403571B2 Method for eliminating reception interference signal of space-time block coded orthogonal frequency division-multiplexing system in high-speed mobile channel 有权
标题翻译：用于消除高速移动通道中时空块编码的正交频分复用系统的接收干扰信号的方法
公开(公告)号：US07403571B2
公开(公告)日：2008-07-22
申请号：US11086441
申请日：2005-03-23
申请人： Won Gi Jeon , Jeong Wook Seo , Jung Wook Wee , Dong Sun Kim
发明人： Won Gi Jeon , Jeong Wook Seo , Jung Wook Wee , Dong Sun Kim
IPC分类号： H04B7/02
CPC分类号： H04L27/2647 , H04B7/0891 , H04L1/0631 , H04L1/0668
摘要： Disclosed herein is a method for eliminating the reception interference signal of a Space-Time Block Coded Orthogonal Frequency-Division Multiplexing (STBC-OFDM) system in a high-speed mobile channel. The method includes the following steps. At the first step, the gain of a channel combined at a receiving end is estimated in the case of using the STBC-OFDM system on a time-varying channel. At the second step, first temporary decision symbols are obtained by performing comparison on the estimated gain. At the third step, second temporary decision symbols are obtained using the first temporary decision symbols. At the fourth step, self-channel interference (SCI) terms are eliminated using the second temporary decision symbols and third temporary decision symbols are obtained. At the fifth step, final data symbols are obtained using the third temporary decision symbols.
摘要翻译：这里公开了一种消除高速移动通道中的空时块编码正交频分复用（STBC-OFDM）系统的接收干扰信号的方法。该方法包括以下步骤。在第一步骤中，在时变信道上使用STBC-OFDM系统的情况下，估计在接收端组合的信道的增益。在第二步骤，通过对估计的增益进行比较来获得第一临时判定符号。在第三步骤中，使用第一临时决策符号获得第二临时决策符号。在第四步骤中，使用第二临时判定符号来消除自信道干扰（SCI）项，并获得第三临时决策符号。在第五步骤中，使用第三临时决策符号获得最终数据符号。

34. 发明授权

US06287982B1 Method of removing a portion of a silicon oxide form over stacked polysilicon and silicide layers by using hydrofluorine (HF) solution 有权
标题翻译：通过使用氢氟酸（HF）溶液在堆叠的多晶硅和硅化物层上去除一部分氧化硅形式的方法
公开(公告)号：US06287982B1
公开(公告)日：2001-09-11
申请号：US09593525
申请日：2000-06-14
申请人： Dong Sun Kim
发明人： Dong Sun Kim
IPC分类号： H01L2124
CPC分类号： H01L28/82 , H01L27/0629 , H01L28/87 , H01L28/91
摘要： A fabrication method for a capacitor having high capacitance that increases capacitance of a capacitor and consequently decreases defective semiconductor devices includes: forming a doped first polysilicon layer pattern on a semiconductor substrate; forming a silicide film pattern on the first polysilicon layer pattern; annealing the semiconductor substrate; sequentially forming a first insulating film and a second insulating film over the silicide film pattern; forming a contact hole to expose a portion of the silicide film pattern and then sequentially placing the semiconductor substrate in an etchant solution and a buffered etchant solution to remove a portion of the first insulating film formed on the silicide film pattern; forming a first capacitor electrode on a portion of an upper surface of the second insulating film pattern and the silicide film pattern, and at inner walls of the contact hole; and forming a dielectric layer on an outer surface of the lower electrode and then a second capacitor electrode.
摘要翻译：一种具有高电容的电容器的制造方法，该电容器增加电容器的电容，从而减少有缺陷的半导体器件，包括：在半导体衬底上形成掺杂的第一多晶硅层图案; 在所述第一多晶硅层图案上形成硅化物膜图案; 退火半导体衬底; 在硅化物膜图案上依次形成第一绝缘膜和第二绝缘膜; 形成接触孔以暴露硅化物膜图案的一部分，然后依次将半导体衬底放置在蚀刻溶液和缓冲蚀刻溶液中以去除在硅化物膜图案上形成的第一绝缘膜的一部分; 在第二绝缘膜图案和硅化物膜图案的上表面的一部分上以及在接触孔的内壁处形成第一电容器电极; 以及在所述下电极的外表面上形成电介质层，然后形成第二电容电极。

35. 发明授权

US6127705A Static random access memory cell suitable for high integration density and cell stabilization 失效
标题翻译：静态随机存取存储器适用于高集成密度和电池稳定
公开(公告)号：US6127705A
公开(公告)日：2000-10-03
申请号：US499990
申请日：1995-07-10
申请人： Dong Sun Kim
发明人： Dong Sun Kim
IPC分类号： H01L27/10 , H01L21/8244 , H01L27/11 , H01L29/76
CPC分类号： H01L27/11 , H01L27/1112 , Y10S257/903 , Y10S257/904
摘要： Static random access memory (SRAM) cell is disclosed, which is suitable for high packing density and cell stabilization, including a substrate, a wordline formed over the substrate, including two parallel legs having gates of first and second access transistors, respectively, gates of first and second drive transistors formed between the two parallel legs, and an active area defined in a surface of the substrate under the gates of the first and second access transistors and gates of the first and second drive transistors.
摘要翻译：公开了静态随机存取存储器（SRAM）单元，其适用于高封装密度和电池稳定性，包括基板，在基板上形成的字线，包括分别具有第一和第二存取晶体管的栅极的两条平行支线，形成在两个平行支腿之间的第一和第二驱动晶体管以及限定在第一和第二存取晶体管的栅极和第一和第二驱动晶体管的栅极之下的衬底的表面中的有源区。

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