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    • 35. 发明授权
    • Low CTE power and ground planes
    • 低CTE电源和接地层
    • US06329603B1
    • 2001-12-11
    • US09288051
    • 1999-04-07
    • Robert M. JappMark D. Poliks
    • Robert M. JappMark D. Poliks
    • H05K103
    • H05K3/4641H05K1/0366H05K2201/0141H05K2201/0158H05K2201/0278H05K2201/0281H05K2201/029H05K2201/0323H05K2201/068H05K2201/09309Y10S428/901Y10T29/49126Y10T29/49165
    • Conductive materials that have low coefficients of thermal expansion (CTEs) and that are used for power and ground planes are disclosed. Fibrous materials (such as carbon, graphite, glass, quartz, polyethylene, and liquid crystal polymer fibers) with low CTEs are metallized to provide a resultant conductive material with a low CTE. Such fibers may be metallized in their individual state and then formed into a fabric, or these materials may be formed into a fabric and then metallized or a combination of both metallizations may be used. In addition, a graphite or carbon sheet may be metallized on one or both sides to provide a material that has a low CTE and high conductivity. These metallized, low CTE power and ground planes may be laminated with other planes/cores into a composite, or laminated into a core which is then laminated with other planes/cores into a composite. The resultant composite may be used for printed circuit boards (PCBs) or PCBs used as laminate chip carriers.
    • 公开了具有低热膨胀系数(CTE)并且用于电力和接地平面的导电材料。 具有低CTE的纤维材料(例如碳,石墨,玻璃,石英,聚乙烯和液晶聚合物纤维)被金属化以提供具有低CTE的所得导电材料。 这样的纤维可以以其单独状态进行金属化,然后形成织物,或者这些材料可以形成织物,然后金属化,或者可以使用两种金属化的组合。 此外,石墨或碳片可以在一侧或两侧金属化,以提供具有低CTE和高导电性的材料。 这些金属化的低CTE功率和接地层可以与其它平面/芯层压成复合材料,或者层压成芯,然后将其与其它平面/芯层叠合成复合材料。 所得的复合材料可用于印刷电路板(PCB)或用作层压芯片载体的PCB。
    • 37. 发明申请
    • CONDUCTING PASTE FOR DEVICE LEVEL INTERCONNECTS
    • 用于设备级互连的导电胶
    • US20120069531A1
    • 2012-03-22
    • US12884657
    • 2010-09-17
    • Rabindra N. DasRoy H. MagnusonMark D. PoliksVoya R. Markovich
    • Rabindra N. DasRoy H. MagnusonMark D. PoliksVoya R. Markovich
    • H05K7/00H01B1/02H01B1/22H01R43/00
    • H01B1/22H01L2224/81Y10T29/49117
    • A conducting paste and method of forming the paste for device level interconnection. The conducting paste contains metal loading in the range 80-95% that is useful for making five micron device level interconnects. The conducting paste is made by mixing two different conducting pastes, each paste maintaining its micro level individual rich region in the mixed paste even after final curing. One paste contains at least one low melting point alloy and the other paste contains noble metal fillers such as gold or silver flakes. In general, average flake size below five micron is suitable for five micron interconnects. However, 1 micron or smaller silver flakes and an LMP mixture is preferred for five micron interconnects. The amount of LMP based paste in the final mixture is preferably 20-50% by weight. The nano micro paste embodiment shows good electrical yield (81%) and low contact resistance.
    • 导电糊和形成用于器件级互连的糊的方法。 导电浆料含有80-95%范围内的金属负载,可用于制造五微米器件级互连。 通过混合两种不同的导电浆料制成导电糊料,即使在最终固化后,每个糊料仍将其微量级独立富含区域保持在混合糊料中。 一种糊状物含有至少一种低熔点合金,另一种糊状物含有贵金属填料如金或银薄片。 通常,小于5微米的平均片尺寸适用于五微米互连。 然而,对于5微米互连,优选1微米或更小的银薄片和LMP混合物。 最终混合物中基于LMP的糊剂的量优选为20-50重量%。 纳米微膏实施例显示良好的电收率(81%)和低接触电阻。